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    • 5. 发明申请
    • Planar waveguide facet profiling
    • 平面波导面分析
    • US20030091311A1
    • 2003-05-15
    • US10272217
    • 2002-10-16
    • Denselight Semiconductors Pte Ltd
    • Yee Loy LamWoon Loong Daniel LeongYuen Chuen Chan
    • G02B006/10G02B006/26
    • H01S5/1082G02B6/122G02B6/305G02B2006/12126G02B2006/12176H01S5/1014
    • In the present invention, profiling of the end facet of an optical waveguide reduces the amount of reflected light propagating in the waveguide. In a conventional waveguide, the effective reflectivity experienced by light at a facet is determined by the modal content of the light and the refractive index of the waveguide (core and cladding) and other material at either side of the dielectric interface, which constitutes the facet. In the present invention, depending upon the modal content of the light, the waveguide dimensions and the refractive indices at the dielectric interfaces, we adjust the profile of the facets so that it is no longer planar and so substantially reduce the amount of reflected light propagating back along the waveguide. This reduction in nulleffective reflectivitynull can be due to an increase in the loss experienced by any reflected light or due to an increase in the amount of light transmitted.
    • 在本发明中,光波导的端面的轮廓减少了在波导中传播的反射光的量。 在常规波导中,由小面处的光所经历的有效反射率由光的模态含量和波导(芯和包层)的折射率以及其构成电介质界面的任一侧的其它材料决定。 。 在本发明中,根据光的模态含量,波导尺寸和电介质界面处的折射率,我们调整刻面的轮廓,使其不再是平面的,因此基本上减少了传播的反射光的量 沿着波导回。 “有效反射率”的这种降低可以归因于任何反射光所经历的损失的增加或由于透射光量的增加。
    • 9. 发明申请
    • High speed waveguide photodetector
    • 高速波导光电探测器
    • US20030173576A1
    • 2003-09-18
    • US10350702
    • 2003-01-24
    • Denselight Semiconductors PTE LTD
    • Yee Loy LamYuen Chuen ChanChai Leng Terence Wee
    • H01L033/00
    • H01L31/109G01J5/20
    • The present invention relates to a semiconductor photodetector. The photodetector is a waveguide photodetector, which comprises: a waveguide (1,2,3) having a III-V ridge structure including an active layer (1); a semiconductor layer (4) deposited on top of the ridge structure; and, metal detector electrodes (not shown) on the surface of the higher refractive index semiconductor layer (4). The semiconductor layer (4) has a higher refractive index than the waveguide structure (1,2,3). The ridge structure is configured to widen along the length of the waveguide (1,2,3) such that light passing through the active layer (1) of the waveguide couples more efficiently up into the higher refractive index semiconductor layer (4).
    • 本发明涉及一种半导体光电探测器。 光电检测器是波导光电检测器,其包括:具有包括有源层(1)的III-V脊结构的波导(1,2,3); 沉积在所述脊结构的顶部上的半导体层(4); 以及在高折射率半导体层(4)的表面上的金属检测器电极(未示出)。 半导体层(4)具有比波导结构(1,2,3)更高的折射率。 脊结构被配置为沿着波导(1,2,3)的长度加宽,使得穿过波导的有源层(1)的光更有效地耦合到高折射率半导体层(4)中。