专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US11725942B2 Photonic integrated chip 有权
公开(公告)号：US11725942B2
公开(公告)日：2023-08-15
申请号：US17644682
申请日：2021-12-16
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD
发明人： Yee Loy Lam , Ter Hoe Loh , Kamal Kader , Long Cheng Koh
IPC分类号： G01C19/72 , G02B6/12 , G02B6/13
CPC分类号： G01C19/721 , G02B6/12004 , G02B6/13 , G02B2006/12035 , G02B2006/12152
摘要： A photonic integrated chip is configured as a transmitter-receiver chip. The photonic integrated chip includes a light emitter, a light detector, a multi-mode interference coupler, and a mode-filed adapter. The light emitted by the light emitter is guided to a core layer formed below the multi-mode interference coupler, and further to the mode-filed adapter for transmission of light to an optical fiber coupled with the photonic integrated chip. Similarly, light received by the mode-filed adapter from the optical fiber propagates to the core layer, and is guided by the multi-mode interference coupler into the light detector. The photonic integrated chip is utilized to realize a single-unit transmitter-receiver module for a fiber optic gyroscope circuit based on monolithic integration of photonics components via wafer fabrication on a substrate. The photonic integrated chip has a low fabrication cost, low size, and is robust.

2. 发明授权

US10217718B1 Method for wafer-level semiconductor die attachment 有权
公开(公告)号：US10217718B1
公开(公告)日：2019-02-26
申请号：US15783455
申请日：2017-10-13
申请人： Denselight Semiconductors Pte. Ltd.
发明人： Yee Loy Lam
IPC分类号： H01L23/00 , H01L21/78 , H01L23/498 , H01L23/544
摘要： A wafer-level semiconductor die attachment method includes placing a semiconductor die of a plurality of semiconductor dies at an initial placement position to overlap a sub-mount pad on a sub-mount of a pre-singulated wafer. A die pad of the semiconductor die comes in contact with a solder layer deposited over the sub-mount pad. The semiconductor die and the sub-mount include a plurality of die and sub-mount mating features, respectively. The solder layer is heated locally to temporarily hold the semiconductor die at the initial placement position. The pre-singulated wafer is reflowed, when each semiconductor die is temporarily held at the corresponding initial placement position. During reflow, each semiconductor die slides from the initial placement position and a contact is established between the corresponding plurality of die and sub-mount mating features. Thereby, each semiconductor die is permanently attached to the corresponding sub-mount.

3. 发明授权

US12149044B2 Flip-chip optoelectronic device 有权
公开(公告)号：US12149044B2
公开(公告)日：2024-11-19
申请号：US17648371
申请日：2022-01-19
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD
发明人： Yee Loy Lam , Hon Yuen Aaron Sim , Lay Cheng Choo , Long Cheng Koh
IPC分类号： H01S5/0234 , H01S5/023 , H01S5/0237 , H01S5/024
CPC分类号： H01S5/0234 , H01S5/023 , H01S5/0237 , H01S5/02461
摘要： An optoelectronic device includes a semiconductor die that includes a substrate layer, a laser diode, first and second conducting pads, a cathode pad, an anode pad, and a passivation layer. The laser diode and the conducting pads are formed on the substrate layer. The formation of the conducting pads directly on the substrate layer offers an increased area for heat dissipation. The cathode pad is formed on the first conducting pad whereas the anode pad is formed above the second conducting pad. The passivation layer is formed above the laser diode. The attachment of the semiconductor die to a submount of the optoelectronic device occurs by way of the cathode pad and the anode pad. After the attachment, a free space is created directly between the passivation layer and the submount to reduce the impact of solder bonding stress on the laser diode.

4. 发明申请

US20230043322A1 MODE FIELD ADAPTER FOR OPTICAL COUPLING OF WAVEGUIDES 有权
公开(公告)号：US20230043322A1
公开(公告)日：2023-02-09
申请号：US17817361
申请日：2022-08-04
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD
发明人： Ter Hoe Loh , Yee Loy Lam
IPC分类号： G02B6/122
摘要： A mode field adapter (MFA) is disclosed. The MFA is tapered and includes a passive core region and an active core region separated by a distance. Further, the passive core region includes first and second passive layers that are separated by another distance. The MFA is configured to receive an optical signal from a first waveguide, and alter, for transmission to a second waveguide, an optical mode of the optical signal. The optical mode is altered based on the distance between the first and second passive layers, the distance between the active and passive core regions, and the tapering of the MFA. The optical mode is altered such that an optical loss associated with the optical signal traversing from the first waveguide to the second waveguide by way of the MFA is within a tolerance limit.

5. 发明申请

US20220283271A1 BEAM SCANNING SYSTEM FOR LIDAR 有权
公开(公告)号：US20220283271A1
公开(公告)日：2022-09-08
申请号：US17653044
申请日：2022-03-01
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD
发明人： Long Cheng Koh , Yee Loy Lam
IPC分类号： G01S7/481
摘要： A beam scanning system includes a light source, an optical switch, a set of spectral dispersive elements, and a set of contour dispersive arrays. The light source emits a beam of light that is received by at least one of the optical switch or a spectral dispersive element. The optical switch emits the received beam of light from an output port that is selected based on a control signal. The spectral dispersive element receives the beam of light from the optical switch. The spectral dispersive element disperses the beam of light to scan a desired target area. One of the contour dispersive arrays receives the dispersed beam of light from the spectral dispersive array and refracts the dispersed beam of light into an array of light beams that scan a desired target area.

6. 发明申请

US20030091311A1 Planar waveguide facet profiling 审中-公开
标题翻译：平面波导面分析
公开(公告)号：US20030091311A1
公开(公告)日：2003-05-15
申请号：US10272217
申请日：2002-10-16
申请人： Denselight Semiconductors Pte Ltd
发明人： Yee Loy Lam , Woon Loong Daniel Leong , Yuen Chuen Chan
IPC分类号： G02B006/10 , G02B006/26
CPC分类号： H01S5/1082 , G02B6/122 , G02B6/305 , G02B2006/12126 , G02B2006/12176 , H01S5/1014
摘要： In the present invention, profiling of the end facet of an optical waveguide reduces the amount of reflected light propagating in the waveguide. In a conventional waveguide, the effective reflectivity experienced by light at a facet is determined by the modal content of the light and the refractive index of the waveguide (core and cladding) and other material at either side of the dielectric interface, which constitutes the facet. In the present invention, depending upon the modal content of the light, the waveguide dimensions and the refractive indices at the dielectric interfaces, we adjust the profile of the facets so that it is no longer planar and so substantially reduce the amount of reflected light propagating back along the waveguide. This reduction in nulleffective reflectivitynull can be due to an increase in the loss experienced by any reflected light or due to an increase in the amount of light transmitted.
摘要翻译：在本发明中，光波导的端面的轮廓减少了在波导中传播的反射光的量。在常规波导中，由小面处的光所经历的有效反射率由光的模态含量和波导（芯和包层）的折射率以及其构成电介质界面的任一侧的其它材料决定。。在本发明中，根据光的模态含量，波导尺寸和电介质界面处的折射率，我们调整刻面的轮廓，使其不再是平面的，因此基本上减少了传播的反射光的量沿着波导回。 “有效反射率”的这种降低可以归因于任何反射光所经历的损失的增加或由于透射光量的增加。

7. 发明申请

US20220231477A1 FLIP-CHIP OPTOELECTRONIC DEVICE 有权
公开(公告)号：US20220231477A1
公开(公告)日：2022-07-21
申请号：US17648371
申请日：2022-01-19
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD
发明人： Yee Loy Lam , Hon Yuen Aaron Sim , Lay Cheng Choo , Long Cheng Koh
IPC分类号： H01S5/0234 , H01S5/024 , H01S5/0237 , H01S5/023
摘要： An optoelectronic device includes a semiconductor die that includes a substrate layer, a laser diode, first and second conducting pads, a cathode pad, an anode pad, and a passivation layer. The laser diode and the conducting pads are formed on the substrate layer. The formation of the conducting pads directly on the substrate layer offers an increased area for heat dissipation. The cathode pad is formed on the first conducting pad whereas the anode pad is formed above the second conducting pad. The passivation layer is formed above the laser diode. The attachment of the semiconductor die to a submount of the optoelectronic device occurs by way of the cathode pad and the anode pad. After the attachment, a free space is created directly between the passivation layer and the submount to reduce the impact of solder bonding stress on the laser diode.

8. 发明申请

US20220149229A1 MIXED STRAIN MULTI-QUANTUM WELL SUPERLUMINESCENT LIGHT EMITTING DIODE 有权
公开(公告)号：US20220149229A1
公开(公告)日：2022-05-12
申请号：US17454722
申请日：2021-11-12
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD
发明人： Royston Hogan , Andy Piper , Rajan Rajgopal , Ashish Kumar Rai , Dasa Lakshmi Narayana Dheeraj
IPC分类号： H01L33/00 , H01L33/06 , H01L33/12
摘要： A superluminescent light emitting diode (SLED) includes an active layer that includes a set of mixed strain quantum wells. The set of mixed strain quantum wells includes a set of compressive strained quantum wells and a set of tensile strained quantum wells. A potential difference applied across the SLED causes movement of electron carriers and hole carriers towards the active layer. Radiative recombination of electron and hole pairs in the set of compressive strained quantum wells enables emission of laterally polarized light and radiative recombination of electron and hole pairs in the set of tensile strained quantum wells enables emission of vertically polarized light. A combination of the laterally polarized light and vertically polarized light results in the emission of incoherent light from the SLED.

9. 发明申请

US20220019021A1 PHOTONIC INTEGRATED CIRCUIT FOR AMPLIFYING OPTICAL SIGNALS 有权
公开(公告)号：US20220019021A1
公开(公告)日：2022-01-20
申请号：US17373232
申请日：2021-07-12
申请人： DenseLight Semiconductors Pte Ltd
发明人： Andy Piper , Ter Hoe Loh , Hon Yuen Aaron Sim , Long Cheng Koh , Yuen Chuen Chan , Yee Loy Lam
IPC分类号： G02B6/12 , H01S3/067 , G02B6/028 , G02B6/122 , G02B6/28
摘要： A photonic integrated circuit (PIC) includes various mode field adapters (MFAs), a waveguide, and various contact pads. All the MFAs are on a same facet of the PIC. One MFA of the PIC outputs a first optical signal that is an amplified version of a second optical signal. The waveguide is divided into two waveguide arms and a bend portion to join the two waveguide arms. The waveguide extends between the MFAs such that the second optical signal propagates through the waveguide. Further, each waveguide arm is formed between the contact pads. The second optical signal propagating through the waveguide is amplified based on a current that is injected in the PIC by way of the contact pads.

10. 发明申请

US20030173576A1 High speed waveguide photodetector 失效
标题翻译：高速波导光电探测器
公开(公告)号：US20030173576A1
公开(公告)日：2003-09-18
申请号：US10350702
申请日：2003-01-24
申请人： Denselight Semiconductors PTE LTD
发明人： Yee Loy Lam , Yuen Chuen Chan , Chai Leng Terence Wee
IPC分类号： H01L033/00
CPC分类号： H01L31/109 , G01J5/20
摘要： The present invention relates to a semiconductor photodetector. The photodetector is a waveguide photodetector, which comprises: a waveguide (1,2,3) having a III-V ridge structure including an active layer (1); a semiconductor layer (4) deposited on top of the ridge structure; and, metal detector electrodes (not shown) on the surface of the higher refractive index semiconductor layer (4). The semiconductor layer (4) has a higher refractive index than the waveguide structure (1,2,3). The ridge structure is configured to widen along the length of the waveguide (1,2,3) such that light passing through the active layer (1) of the waveguide couples more efficiently up into the higher refractive index semiconductor layer (4).
摘要翻译：本发明涉及一种半导体光电探测器。光电检测器是波导光电检测器，其包括：具有包括有源层（1）的III-V脊结构的波导（1,2,3）; 沉积在所述脊结构的顶部上的半导体层（4）; 以及在高折射率半导体层（4）的表面上的金属检测器电极（未示出）。半导体层（4）具有比波导结构（1,2,3）更高的折射率。脊结构被配置为沿着波导（1,2,3）的长度加宽，使得穿过波导的有源层（1）的光更有效地耦合到高折射率半导体层（4）中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式