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    • 4. 发明申请
    • Enhanced Power Distribution in an Integrated Circuit
    • 集成电路中增强的功率分配
    • US20100097875A1
    • 2010-04-22
    • US12254421
    • 2008-10-20
    • David VinkeMichael N. DillonBret Alan OeltjenUday AnumalachettyThomas Mathews Antisseril
    • David VinkeMichael N. DillonBret Alan OeltjenUday AnumalachettyThomas Mathews Antisseril
    • G11C5/14H01L21/60
    • G11C5/063G11C8/10H01L2924/0002H01L2924/14H01L2924/1433H01L2924/19043H01L2924/30105H01L2924/30107H01L2924/3011H01L2924/00
    • An integrated circuit structure for distributing power to one or more standard cells in an integrated circuit includes a first plurality of standard cells and a power mesh power connection structure coupled to the cells. Each of the standard cells includes first and second power rails adapted for connection to a voltage supply and a voltage return, respectively, of the standard cells. Each standard cell in a subset of the standard cells is arranged in direct abutment with at least two other standard cells, and at least first and second end cells are arranged in direct abutment with at least one other standard cell of the first plurality of standard cells. The power mesh power connection structure includes a plurality of conductive elements formed in a plurality of different conductive layers in the integrated circuit. The power mesh power connection structure is operative to connect the first and second power rails of the first plurality of standard cells to the voltage supply and voltage return, respectively, and is configured so as to reduce a first voltage differential between respective first power rails of the standard cells and to reduce a second voltage differential between respective second power rails of the standard cells.
    • 用于向集成电路中的一个或多个标准单元分配功率的集成电路结构包括耦合到该单元的第一多个标准单元和功率网格功率连接结构。 每个标准单元包括分别连接到标准单元的电压源和电压返回的第一和第二电源轨。 标准细胞子集中的每个标准细胞被布置成与至少两个其它标准细胞直接邻接,并且至少第一和第二末端细胞被布置成与第一多个标准细胞的至少一个其它标准细胞直接邻接 。 功率网格功率连接结构包括形成在集成电路中的多个不同导电层中的多个导电元件。 功率网格电力连接结构可操作以将第一多个标准单元的第一和第二电力轨分别连接到电压供应和电压返回,并且被配置为减小相应的第一电力轨之间的第一电压差 并且减小标准单元的相应的第二电源轨之间的第二电压差。
    • 5. 发明授权
    • Latch-based random access memory (LBRAM) with tri-state banking and contention avoidance
    • 基于锁存的随机存取存储器(LBRAM),具有三态银行和争用避免
    • US07233540B1
    • 2007-06-19
    • US11237059
    • 2005-09-27
    • David VinkeBret A. OeltjenMichael N. Dillon
    • David VinkeBret A. OeltjenMichael N. Dillon
    • G11C8/00
    • G11C8/10G11C8/12G11C11/419
    • A disclosed memory, such as a random access memory (RAM) has multiple banks including a first bank and a second bank each having multiple latch cells configured to store data. The first bank has a first bit line, and the second bank has a second bit line. A first tri-state buffer has an input node coupled to the first bit line, an enable node coupled to receive a first enable signal, and an output node coupled to a tri-state bit line. A second tri-state buffer has an input node coupled to the second bit line, an enable node coupled to receive a second enable signal, and an output node coupled to the tri-state bit line. Enable signal generation logic uses a portion of an address signal to generate the first and second enable signals such that the first and second enable signals are not in an active state simultaneously. Avoiding concurrent activity of the enable signals eliminates contention on the tri-state output bit lines, and thereby prevents the mutually coupled tri-state bit lines output from the first and second tri-state buffers from being active at the same time. Placing a delay between activity minimizes contention on the mutually coupled, buffered bit line.
    • 诸如随机存取存储器(RAM)的所公开的存储器具有包括第一存储体和第二存储体的多个存储体,每个存储体具有被配置为存储数据的多个锁存单元。 第一个银行有一个第一个位线,第二个银行有一个第二个位线。 第一三态缓冲器具有耦合到第一位线的输入节点,耦合以接收第一使能信号的使能节点和耦合到三态位线的输出节点。 第二三状态缓冲器具有耦合到第二位线的输入节点,耦合以接收第二使能信号的使能节点和耦合到三态位线的输出节点。 启用信号生成逻辑使用地址信号的一部分来产生第一和第二使能信号,使得第一和第二使能信号不同时处于活动状态。 避免使能信号的并行活动消除了对三态输出位线的争用,从而防止从第一和第二三态缓冲器输出的相互耦合的三态位线同时被激活。 在活动之间延迟最小化相互耦合的缓冲位线上的争用。
    • 9. 发明授权
    • Latch-based random access memory (LBRAM) tri-state banking architecture
    • 基于锁存的随机存取存储器(LBRAM)三态银行架构
    • US07266021B1
    • 2007-09-04
    • US11237064
    • 2005-09-27
    • David VinkeBret A. OeltjenEkambaram Balaji
    • David VinkeBret A. OeltjenEkambaram Balaji
    • G11C7/00G11C8/00
    • G11C7/12G11C8/12
    • A disclosed memory, such as a random access memory (RAM) has multiple banks including a first bank and a second bank each having multiple latch cells configured to store data. The first bank has a first bit line, and the second bank has a second bit line. A first tri-state buffer has an input node coupled to the first bit line, an enable node coupled to receive a first enable signal, and an output node coupled to a tri-state output bit line. A second tri-state buffer has an input node coupled to the second bit line, an enable node coupled to receive a second enable signal, and an output node coupled to the tri-state output bit line. Enable signal generation logic uses a portion of an address signal to generate the first and second enable signals. The memory produces an output signal dependent upon the enable signal generation logic output, and thus upon a logic level of the tri-state output bit line.
    • 诸如随机存取存储器(RAM)的所公开的存储器具有包括第一存储体和第二存储体的多个存储体,每个存储体具有被配置为存储数据的多个锁存单元。 第一个银行有一个第一个位线,第二个银行有一个第二个位线。 第一三态缓冲器具有耦合到第一位线的输入节点,耦合以接收第一使能信号的使能节点和耦合到三态输出位线的输出节点。 第二三状态缓冲器具有耦合到第二位线的输入节点,耦合以接收第二使能信号的使能节点和耦合到三态输出位线的输出节点。 使能信号生成逻辑使用地址信号的一部分来产生第一和第二使能信号。 存储器根据使能信号产生逻辑输出产生输出信号,从而产生三态输出位线的逻辑电平。