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    • 1. 发明申请
    • Wafer heater assembly
    • 晶圆加热器总成
    • US20050217799A1
    • 2005-10-06
    • US10813119
    • 2004-03-31
    • David O'MearaGerrit LeusinkStephen CabralAnthony DipCory WajdaRaymond Joe
    • David O'MearaGerrit LeusinkStephen CabralAnthony DipCory WajdaRaymond Joe
    • C23F1/00H01L21/00
    • H01L21/67109H01J2237/2001
    • A wafer heating assembly is described having a unique heater element for use in a single wafer processing systems. The heating unit includes a carbon wire element encased in a quartz sheath. The heating unit is as contamination-free as the quartz, which permits direct contact to the wafer. The mechanical flexibility of the carbon ‘wire’ or ‘braided’ structure permits a coil configuration, which permits independent heater zone control across the wafer. The multiple independent heater zones across the wafer can permit temperature gradients to adjust film growth/deposition uniformity and rapid thermal adjustments with film uniformity superior to conventional single wafer systems and with minimum to no wafer warping. The low thermal mass permits a fast thermal response that enables a pulsed or digital thermal process that results in layer-by-layer film formation for improved thin film control.
    • 描述了具有用于单个晶片处理系统的唯一加热器元件的晶片加热组件。 加热单元包括封装在石英鞘中的碳线元件。 加热单元与石英无污染,允许直接接触晶片。 碳线或“编织”结构的机械灵活性允许线圈构造,其允许跨晶片的独立加热器区域控制。 跨晶片的多个独立的加热器区域可以允许温度梯度调节膜生长/沉积均匀性和快速的热调节,其膜均匀性优于常规单晶片系统,并且最小至无晶片翘曲。 低热质量允许快速的热响应,其实现脉冲或数字热处理,其导致逐层成膜以改善薄膜控制。
    • 2. 发明申请
    • Method and processing system for monitoring status of system components
    • 监控系统组件状态的方法和处理系统
    • US20050070104A1
    • 2005-03-31
    • US10674703
    • 2003-09-30
    • David O'MearaDaniel BurdettStephen CabralGert LeusinkJohn KostenkoCory Wajda
    • David O'MearaDaniel BurdettStephen CabralGert LeusinkJohn KostenkoCory Wajda
    • H01L21/00H01L21/302H01L21/461
    • H01L21/67276B81C99/0065B81C2201/0138H01L21/67253
    • A method and system for monitoring status of a system component during a process. The method includes exposing a system component to a reactant gas during a process, where the reactant gas is capable of etching the system component material to form an erosion product, and monitoring release of the erosion product during the process to determine status of the system component. Processes that can be monitored include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, an injector, a substrate holder, a liner, a pedestal, a cap cover, an electrode, and a heater, any of which can further include a protective coating. The processing system includes the system component in a process chamber, a gas injection system for introducing the reactant gas, a chamber protection system for monitoring the status of the system component, and a controller for controlling the processing system in response to the status.
    • 一种在过程中监视系统组件的状态的方法和系统。 该方法包括在过程期间将系统组分暴露于反应气体,其中反应气体能够蚀刻系统组分材料以形成侵蚀产物,并且在该过程期间监测侵蚀产物的释放以确定系统部件的状态 。 可以监测的方法包括室清洁过程,室调节过程,基板蚀刻工艺和基板成膜工艺。 系统组件可以是消耗系统部件,例如处理管,屏蔽件,环,挡板,注射器,衬底保持器,衬垫,基座,帽盖,电极和加热器 其可以进一步包括保护涂层。 处理系统包括处理室中的系统部件,用于引入反应气体的气体注入系统,用于监视系统部件的状态的室保护系统以及响应于状态来控制处理系统的控制器。