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1. 发明授权

US5102213A Narrow band selective absorption filter 失效
标题翻译：窄带选择吸收滤光片
公开(公告)号：US5102213A
公开(公告)日：1992-04-07
申请号：US486475
申请日：1990-02-28
申请人： James C. Lee , David Greenlaw , Sau K. Lo
发明人： James C. Lee , David Greenlaw , Sau K. Lo
IPC分类号： G02B5/22 , G21F1/10
CPC分类号： G21F1/103 , G02B5/223
摘要： A solid state form of a dye-solution absorption filter is disclosed. Physical vapor depositable (i.e., evaporable) dyes are codeposited with a polyester matrix in a vacuum system to randomly disperse dye molecules in a solid dilutant. The dyes are selected to absorb at the wavelengths of interest. Dilution in a transparent matrix affords narrow band absorption and good out of band transmittance. Multilayer configurations allow absorption of a plurality of wavelengths. The filter coating conforms to curved and sharply contoured surfaces and layers only 10 microns thick afford very high absorptance.
摘要翻译：公开了一种固态形式的染料溶液吸收滤光片。物理气相沉积（即可蒸发）染料与真空系统中的聚酯基质共沉积，以将染料分子随机分散在固体稀释剂中。选择染料以在感兴趣的波长处吸收。透明矩阵中的稀释提供窄带吸收和良好的带外透射率。多层结构允许吸收多个波长。过滤器涂层符合弯曲和锐利轮廓的表面，只有10微米厚的层提供非常高的吸收率。

2. 发明授权

US4935166A Narrow band selective absorption filter 失效
公开(公告)号：US4935166A
公开(公告)日：1990-06-19
申请号：US777063
申请日：1985-09-17
申请人： James C. Lee , David Greenlaw , Sau K. Lo
发明人： James C. Lee , David Greenlaw , Sau K. Lo
IPC分类号： G02B5/22 , G21F1/10
CPC分类号： G02B5/223 , G21F1/103
摘要： A solid state form of a dye-solution absorption filter is disclosed. Physical vapor depositable (i.e., evaporable) dyes are codeposited with a polyester matrix in a vacuum system to randomly disperse dye molecules in a solid dilutant. The dyes are selected to absorb at the wavelengths of interest. Dilution in a transparent matrix affords narrow band absorption and good out of band transmittance. Multilayer configurations allow absorption of a plurality of wavelengths. The filter coating conforms to curved and sharply contoured surfaces and layers only 10 microns thick afford very high absorptance.

3. 发明申请

US20060194381A1 Gate structure and a transistor having asymmetric spacer elements and methods of forming the same 有权
标题翻译：栅极结构和具有不对称间隔元件的晶体管及其形成方法
公开(公告)号：US20060194381A1
公开(公告)日：2006-08-31
申请号：US11247367
申请日：2005-10-11
申请人： Andy Wei , Gert Burbach , David Greenlaw
发明人： Andy Wei , Gert Burbach , David Greenlaw
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L29/66659 , H01L21/26586 , H01L21/823864 , H01L29/66772 , H01L29/7835
摘要： Methods for forming asymmetric gate structures comprising spacer elements disposed on the opposed sides of a gate electrode and having a different width are disclosed. The asymmetric gate structures are employed to form an asymmetric design of a halo region and extension regions of a field effect transistor using a symmetric implantation scheme, or to further enhance the effectiveness of asymmetric implantation schemes. The transistor performance may be significantly enhanced for a given basic transistor architecture. In particular, a large overlap area may be created at the source side with a steep concentration gradient of the PN junction due to the provision of the halo region, whereas the drain overlap may be significantly reduced or may even be completely avoided to further enhance the transistor performance.
摘要翻译：公开了形成非对称栅极结构的方法，其包括设置在栅电极的相对侧上且具有不同宽度的间隔元件。采用不对称栅结构来形成使用对称注入方案的场效应晶体管的晕区和扩展区的非对称设计，或进一步提高非对称注入方案的有效性。对于给定的基本晶体管架构，晶体管的性能可以显着提高。特别地，由于提供卤素区域，可能在源极侧产生具有PN结的陡峭浓度梯度的大的重叠区域，而漏极重叠可以被显着地减少或者甚至可以被完全避免以进一步增强晶体管性能。

4. 发明授权

US06319804B1 Process to separate the doping of polygate and source drain regions in dual gate field effect transistors 失效
标题翻译：在双栅场效应晶体管中分离多晶硅栅极和源极漏极区域的掺杂过程
公开(公告)号：US06319804B1
公开(公告)日：2001-11-20
申请号：US08624910
申请日：1996-03-27
申请人： David Greenlaw , Scott Luning
发明人： David Greenlaw , Scott Luning
IPC分类号： H01L2102
CPC分类号： H01L29/66575 , H01L21/28061 , H01L29/4933 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： The present invention is directed toward a method for independently doping the gate and the source-drain regions of a semiconductor device. The method is initiated by the provision. of a substrate having isolation regions and a thin insulating layer. Over the substrate is formed a polysilicon layer which is doped with a first type of dopant at a first doping level. Over the polysilicon layer is formed a conducting layer of material that can withstand temperatures of 1000° C., and over the conducting layer is formed a blocking layer. The polysilicon layer, the conducting layer and the blocking layer are etched to form a gate stack. Source-drain regions are subsequently doped with a second type of dopant at a second doping level. Source-drain regions are activated in a 1000° C. heat cycle, and, subsequently, TiSi2 is formed on the source-drain regions. Contacts are then formed. The blocking layer on the gate stack need not be removed, which aids in minimizing substrate damage and in prevention of shorting a source-drain contact region to the substrate.
摘要翻译：本发明涉及用于独立地掺杂半导体器件的栅极和源极 - 漏极区域的方法。该方法由该条款开始。具有隔离区域和薄绝缘层的衬底。在衬底上形成多晶硅层，其以第一掺杂级别掺杂有第一类型的掺杂剂。在多晶硅层上形成能够承受1000℃的温度的导电层，并且在导电层上形成阻挡层。蚀刻多晶硅层，导电层和阻挡层以形成栅叠层。源极 - 漏极区域随后以第二掺杂水平掺杂第二类型的掺杂剂。源极 - 漏极区域在1000℃的热循环中被激活，随后在源极 - 漏极区域上形成TiSi 2。然后形成接触。栅堆叠上的阻挡层不需要去除，这有助于最小化衬底损伤并防止将源 - 漏接触区域短路到衬底。

5. 发明授权

US5878307A Toner container having rotary seal 失效
标题翻译：具有旋转密封的调色剂容器
公开(公告)号：US5878307A
公开(公告)日：1999-03-02
申请号：US022989
申请日：1998-02-12
申请人： David Greenlaw , Arthur Kroll , Daniel Lyman , Antonio Russo
发明人： David Greenlaw , Arthur Kroll , Daniel Lyman , Antonio Russo
IPC分类号： G03G15/08
CPC分类号： G03G15/0886 , G03G15/0868 , G03G15/0872 , G03G2215/0668 , G03G2215/0692
摘要： A toner cartridge for supplying toner to a replenishment apparatus of an electrophotographic imaging device has an elongated cylindrical container filled with toner. The container has a longitudinal axis, an open end and a closed end. An end cap is adapted and arranged to close the open end and to accommodate relative rotational motion between the container and the end cap. The end cap has a flange portion defining an open end terminating in an end portion having an edge. An elastomeric seal is provided to effect a positive, relatively low-friction toner seal between a relatively rotating container and the end cap. The seal in an exemplary embodiment comprises an elastomeric band, which is sized properly to affix onto the outside diameter of the cap end portion, with a portion of the seal extending beyond the cap end portion. This extending part of the seal conforms around the inside of the cap end portion such that when the cap is slid over the container during assembly, the seal rides over, and conforms to, the outside diameter of the container. Accordingly, as the bottle and cap are rotated relative to one another, the seal conforms and seals. The toner is discharged through an opening in the end cap.
摘要翻译：用于向电子照相成像装置的补充装置供应调色剂的调色剂盒具有填充有调色剂的细长圆柱形容器。容器具有纵轴，开口端和封闭端。端帽被适配和布置成闭合开口端并容纳容器和端盖之间的相对旋转运动。端盖具有限定开口端的凸缘部分，其终止于具有边缘的端部部分。提供弹性体密封件以在相对旋转的容器和端盖之间实现正的，相对低摩擦的调色剂密封。在示例性实施例中的密封件包括弹性体带，其尺寸适当地固定到帽端部的外径上，其中一部分密封件延伸超过帽端部。密封件的该延伸部分围绕盖端部的内部配合，使得当在组装期间盖在容器上滑动时，密封件越过并符合容器的外径。因此，当瓶和盖相对于彼此旋转时，密封件符合并密封。调色剂通过端盖中的开口排出。

6. 发明授权

US5270854A Narrow band selective absorption filter 失效
标题翻译：窄带选择吸收滤光片
公开(公告)号：US5270854A
公开(公告)日：1993-12-14
申请号：US744635
申请日：1991-08-08
申请人： James C. Lee , David Greenlaw , Sau K. Lo
发明人： James C. Lee , David Greenlaw , Sau K. Lo
IPC分类号： G02B5/22 , G21F1/10 , F21V9/04 , G02C7/10
CPC分类号： G02B5/223 , G21F1/103
摘要： A solid state form of a dye-solution absorption filter is disclosed. Physical vapor depositable (i.e., evaporable) dyes are codeposited with a polyester matrix in a vacuum system to randomly disperse dye molecules in a solid dilutant. The dyes are selected to absorb at the wavelengths of interest. Dilution in a transparent matrix affords narrow band absorption and good out of band transmittance. Multilayer configurations allow absorption of a plurality of wavelengths. The filter coating conforms to curved and sharply contoured surfaces and layers only 10 microns thick afford very high absorptance.
摘要翻译：公开了一种固态形式的染料溶液吸收滤光片。物理气相沉积（即可蒸发）染料与真空系统中的聚酯基质共沉积，以将染料分子随机分散在固体稀释剂中。选择染料以在感兴趣的波长处吸收。透明矩阵中的稀释提供窄带吸收和良好的带外透射率。多层结构允许吸收多个波长。过滤器涂层符合弯曲和锐利轮廓的表面，只有10微米厚的层提供非常高的吸收率。

7. 发明授权

US07354839B2 Gate structure and a transistor having asymmetric spacer elements and methods of forming the same 有权
标题翻译：栅极结构和具有不对称间隔元件的晶体管及其形成方法
公开(公告)号：US07354839B2
公开(公告)日：2008-04-08
申请号：US11247367
申请日：2005-10-11
申请人： Andy Wei , Gert Burbach , David Greenlaw
发明人： Andy Wei , Gert Burbach , David Greenlaw
IPC分类号： H01L21/336
CPC分类号： H01L29/66659 , H01L21/26586 , H01L21/823864 , H01L29/66772 , H01L29/7835
摘要： Methods for forming asymmetric gate structures comprising spacer elements disposed on the opposed sides of a gate electrode and having a different width are disclosed. The asymmetric gate structures are employed to form an asymmetric design of a halo region and extension regions of a field effect transistor using a symmetric implantation scheme, or to further enhance the effectiveness of asymmetric implantation schemes. The transistor performance may be significantly enhanced for a given basic transistor architecture. In particular, a large overlap area may be created at the source side with a steep concentration gradient of the PN junction due to the provision of the halo region, whereas the drain overlap may be significantly reduced or may even be completely avoided to further enhance the transistor performance.
摘要翻译：公开了形成非对称栅极结构的方法，其包括设置在栅电极的相对侧上且具有不同宽度的间隔元件。采用不对称栅结构来形成使用对称注入方案的场效应晶体管的晕区和扩展区的非对称设计，或进一步提高非对称注入方案的有效性。对于给定的基本晶体管架构，晶体管的性能可以显着提高。特别地，由于提供卤素区域，可能在源极侧产生具有PN结的陡峭浓度梯度的大的重叠区域，而漏极重叠可以被显着地减少或者甚至可以被完全避免以进一步增强晶体管性能。

8. 发明授权

US06943067B2 Three-dimensional integrated semiconductor devices 有权
标题翻译：三维集成半导体器件
公开(公告)号：US06943067B2
公开(公告)日：2005-09-13
申请号：US10260840
申请日：2002-09-30
申请人： David Greenlaw
发明人： David Greenlaw
IPC分类号： H01L21/768 , H01L21/822 , H01L21/84 , H01L23/48 , H01L25/065 , H01L27/06 , H01L27/12 , H01L21/00
CPC分类号： H01L21/743 , H01L21/76898 , H01L21/8221 , H01L21/84 , H01L23/481 , H01L25/0657 , H01L25/50 , H01L27/0688 , H01L27/1203
摘要： The present invention describes a process for three-dimensional integration of semiconductor devices and a resulting device. The process combines low temperature wafer bonding methods with backside/substrate contact processing methods, preferably with silicon on insulator devices. The present invention utilizes, in an inventive fashion, low temperature bonding processes used for bonded silicon on insulator (SOI) wafer technology. This low temperature bonding technology is adopted for stacking several silicon layers on top of each other and building active transistors and other circuit elements in each one. The back-side/substrate contact processing methods allow the interconnection of the bonded SOI layers.
摘要翻译：本发明描述了半导体器件和所得器件三维集成的方法。该方法将低温晶片接合方法与背面/衬底接触处理方法相结合，优选与绝缘体上硅器件结合。本发明以本发明的方式利用用于粘结绝缘体上硅（SOI）晶片技术的低温粘合工艺。采用这种低温接合技术，将多个硅层彼此堆叠起来，并在其中构建有源晶体管和其他电路元件。背面/衬底接触处理方法允许结合的SOI层的互连。

9. 外观设计

USD423560S Container for toner 失效
公开(公告)号：USD423560S
公开(公告)日：2000-04-25
申请号：US83591
申请日：1998-02-12
申请人： David Greenlaw , Arthur Kroll
设计人： David Greenlaw , Arthur Kroll

10. 发明授权

US5697832A Variable speed bi-directional planetary grinding or polishing apparatus 失效
标题翻译：变速双向行星式研磨或抛光装置
公开(公告)号：US5697832A
公开(公告)日：1997-12-16
申请号：US544720
申请日：1995-10-18
申请人： David Greenlaw , William A. Hughes , Terry Hickman , John Berbaum , Clyde Marchand
发明人： David Greenlaw , William A. Hughes , Terry Hickman , John Berbaum , Clyde Marchand
IPC分类号： B24B37/08 , B24B47/10 , B24B7/22
CPC分类号： B24B37/08 , B24B47/10
摘要： This invention relates to a planetary grinding or polishing machine wherein the outer ring gear, the upper platen, and the lower platen are independently rotatable in the clockwise or counterclockwise directions at variable speeds. Such grinding or polishing is especially useful in high precision finishing of aluminum, nickel plated, and ceramic substrates where uniform and non-uniform surface finishes are required from surface-to-surface in the workpiece.
摘要翻译：本发明涉及一种行星式研磨或抛光机，其中外环齿轮，上压板和下压板可独立地以可变速度沿顺时针或逆时针方向旋转。这种研磨或抛光在铝，镍电镀和陶瓷基体的高精度精加工中是特别有用的，其中在工件中从表面到表面需要均匀且不均匀的表面光洁度。

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