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1. 发明授权

US08546210B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08546210B2
公开(公告)日：2013-10-01
申请号：US12794120
申请日：2010-06-04
申请人： Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
发明人： Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
IPC分类号： H01L21/336
CPC分类号： H01L21/6835 , H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L21/84 , H01L23/544 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L27/12 , H01L29/78603 , H01L29/78648 , H01L2221/6835 , H01L2223/5442 , H01L2223/54426 , H01L2223/6677 , H01L2224/16 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2224/83191 , H01L2224/838 , H01L2224/85 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/04941 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/19043 , H01L2924/30105 , H01Q1/38 , H01Q9/285 , H01Q23/00 , Y10S438/982 , H01L2924/00 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.
摘要翻译：本发明的目的是提供一种通过与专利文献1中公开的方法不同的方法从衬底分离薄膜晶体管和包括薄膜晶体管的电路或半导体器件的方法，并且将薄膜晶体管，以及电路或半导体器件到具有柔性的衬底。根据本发明，在绝缘膜上形成大的开口或多个开口，在开口处形成连接到薄膜晶体管的导电膜，并且去除剥离层，然后，将具有薄的薄膜晶体管转置到具有导电膜等的基板上。根据本发明的薄膜晶体管具有通过激光照射而结晶的半导体膜，并且防止剥离层在不被激光照射的激光照射下曝光。

2. 发明授权

US08664722B2 Thin film transistor with metal silicide layer 有权
标题翻译：具有金属硅化物层的薄膜晶体管
公开(公告)号：US08664722B2
公开(公告)日：2014-03-04
申请号：US13288999
申请日：2011-11-04
申请人： Takashi Shingu , Daisuke Ohgarane , Yurika Sato
发明人： Takashi Shingu , Daisuke Ohgarane , Yurika Sato
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L29/66621 , H01L29/458 , H01L29/66757
摘要： In a method for manufacturing a semiconductor device, a semiconductor film formed over an insulator is doped with an impurity element to a depth less than the thickness of the semiconductor film, thereby forming an impurity doped layer; a metal silicide layer is formed on the impurity doped layer; the metal silicide layer and the semiconductor film are etched to form a recessed portion; and a layer which is not doped with the impurity element and is located at the bottom of the recessed portion of the semiconductor film is thinned to make a channel formation region. Further, a gate electrode is formed in the recessed portion over the thinned non impurity doped layer, with an insulating film interposed therebetween.
摘要翻译：在制造半导体器件的方法中，形成在绝缘体上的半导体膜掺杂有杂质元素，其深度小于半导体膜的厚度，从而形成杂质掺杂层; 在杂质掺杂层上形成金属硅化物层; 蚀刻金属硅化物层和半导体膜以形成凹部; 并且不掺杂杂质元素并且位于半导体膜的凹部的底部的层被薄化以形成沟道形成区域。此外，在稀薄的非杂质掺杂层上的凹部中形成有栅电极，其间插入有绝缘膜。

3. 发明申请

US20120049276A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120049276A1
公开(公告)日：2012-03-01
申请号：US13288999
申请日：2011-11-04
申请人： Takashi SHINGU , Daisuke Ohgarane , Yurika Sato
发明人： Takashi SHINGU , Daisuke Ohgarane , Yurika Sato
IPC分类号： H01L29/78 , H01L29/772
CPC分类号： H01L29/66621 , H01L29/458 , H01L29/66757
摘要： In a method for manufacturing a semiconductor device, a semiconductor film formed over an insulator is doped with an impurity element to a depth less than the thickness of the semiconductor film, thereby forming an impurity doped layer; a metal silicide layer is formed on the impurity doped layer; the metal silicide layer and the semiconductor film are etched to form a recessed portion; and a layer which is not doped with the impurity element and is located at the bottom of the recessed portion of the semiconductor film is thinned to make a channel formation region. Further, a gate electrode is formed in the recessed portion over the thinned non impurity doped layer, with an insulating film interposed therebetween.
摘要翻译：在制造半导体器件的方法中，形成在绝缘体上的半导体膜掺杂有杂质元素，其深度小于半导体膜的厚度，从而形成杂质掺杂层; 在杂质掺杂层上形成金属硅化物层; 蚀刻金属硅化物层和半导体膜以形成凹部; 并且不掺杂杂质元素并且位于半导体膜的凹部的底部的层被薄化以形成沟道形成区域。此外，在稀薄的非杂质掺杂层上的凹部中形成有栅电极，其间插入有绝缘膜。

4. 发明授权

US07736964B2 Semiconductor device, and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07736964B2
公开(公告)日：2010-06-15
申请号：US11274904
申请日：2005-11-16
申请人： Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
发明人： Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
IPC分类号： H01L21/336
CPC分类号： H01L21/6835 , H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L21/84 , H01L23/544 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L27/12 , H01L29/78603 , H01L29/78648 , H01L2221/6835 , H01L2223/5442 , H01L2223/54426 , H01L2223/6677 , H01L2224/16 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2224/83191 , H01L2224/838 , H01L2224/85 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/04941 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/19043 , H01L2924/30105 , H01Q1/38 , H01Q9/285 , H01Q23/00 , Y10S438/982 , H01L2924/00 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.
摘要翻译：本发明的目的是提供一种通过与专利文献1中公开的方法不同的方法从衬底分离薄膜晶体管和包括薄膜晶体管的电路或半导体器件的方法，并且将薄膜晶体管，以及电路或半导体器件到具有柔性的衬底。根据本发明，在绝缘膜上形成大的开口或多个开口，在开口处形成连接到薄膜晶体管的导电膜，并且去除剥离层，然后，将具有薄的薄膜晶体管转置到具有导电膜等的基板上。根据本发明的薄膜晶体管具有通过激光照射而结晶的半导体膜，并且防止剥离层在不被激光照射的激光照射下曝光。

5. 发明授权

US08048749B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08048749B2
公开(公告)日：2011-11-01
申请号：US12178356
申请日：2008-07-23
申请人： Tomokazu Yokoi , Atsuo Isobe , Motomu Kurata , Takeshi Shichi , Daisuke Ohgarane , Takashi Shingu
发明人： Tomokazu Yokoi , Atsuo Isobe , Motomu Kurata , Takeshi Shichi , Daisuke Ohgarane , Takashi Shingu
IPC分类号： H01L21/336
CPC分类号： H01L29/66765
摘要： A method for manufacturing a semiconductor device, by which a bottom gate thin film transistor that has an improved S value and a channel forming region with a smaller thickness than that of a source region and a drain region can be manufactured in a simple process. An island-like conductive film is formed over a surface of an insulating substrate in a portion corresponding to a channel forming region, and is covered with an insulating film to form a projection portion. After an amorphous semiconductor film is deposited to cover the projection portion, the amorphous semiconductor film is irradiated with laser light so as to be melted and crystallized. Part of the melted semiconductor over the projection portion flows into regions adjacent to both sides of the projection portion, which results in reduction in thickness of the semiconductor film over the projection portion (channel forming region).
摘要翻译：一种制造半导体器件的方法，通过该方法可以以简单的方法制造具有改善的S值的底栅极薄膜晶体管和具有比源极区和漏极区更小的厚度的沟道形成区。在对应于沟道形成区域的部分的绝缘基板的表面上形成岛状导电膜，并且被绝缘膜覆盖以形成突出部。在沉积非晶半导体膜以覆盖突出部分之后，用激光照射非晶半导体膜以使其熔化并结晶。突出部分上的熔融半导体的一部分流入与突出部分的两侧相邻的区域，这导致半导体膜在突出部分（沟道形成区域）上的厚度减小。

6. 发明申请

US20090029514A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090029514A1
公开(公告)日：2009-01-29
申请号：US12178356
申请日：2008-07-23
申请人： Tomokazu YOKOI , Atsuo ISOBE , Motomu KURATA , Takeshi SHICHI , Daisuke OHGARANE , Takashi SHINGU
发明人： Tomokazu YOKOI , Atsuo ISOBE , Motomu KURATA , Takeshi SHICHI , Daisuke OHGARANE , Takashi SHINGU
IPC分类号： H01L21/336
CPC分类号： H01L29/66765
摘要： A method for manufacturing a semiconductor device, by which a bottom gate thin film transistor that has an improved S value and a channel forming region with a smaller thickness than that of a source region and a drain region can be manufactured in a simple process. An island-like conductive film is formed over a surface of an insulating substrate in a portion corresponding to a channel forming region, and is covered with an insulating film to form a projection portion. After an amorphous semiconductor film is deposited to cover the projection portion, the amorphous semiconductor film is irradiated with laser light so as to be melted and crystallized. Part of the melted semiconductor over the projection portion flows into regions adjacent to both sides of the projection portion, which results in reduction in thickness of the semiconductor film over the projection portion (channel forming region).
摘要翻译：一种制造半导体器件的方法，通过该方法可以以简单的方法制造具有改善的S值的底栅极薄膜晶体管和具有比源极区和漏极区更小的厚度的沟道形成区。在对应于沟道形成区域的部分的绝缘基板的表面上形成岛状导电膜，并且被绝缘膜覆盖以形成突出部。在沉积非晶半导体膜以覆盖突出部分之后，用激光照射非晶半导体膜以使其熔化并结晶。突出部分上的熔融半导体的一部分流入与突出部分的两侧相邻的区域，这导致半导体膜在突出部分（沟道形成区域）上的厚度减小。

7. 发明授权

US08053289B2 Manufacturing method for thin film transistor on insulator 有权
标题翻译：绝缘子薄膜晶体管的制造方法
公开(公告)号：US08053289B2
公开(公告)日：2011-11-08
申请号：US12251596
申请日：2008-10-15
申请人： Takashi Shingu , Daisuke Ohgarane , Yurika Sato
发明人： Takashi Shingu , Daisuke Ohgarane , Yurika Sato
IPC分类号： H01L21/786
CPC分类号： H01L29/66621 , H01L29/458 , H01L29/66757
摘要： In a method for manufacturing a semiconductor device, a semiconductor film formed over an insulator is doped with an impurity element to a depth less than the thickness of the semiconductor film, thereby forming an impurity doped layer; a metal silicide layer is formed on the impurity doped layer; the metal silicide layer and the semiconductor film are etched to form a recessed portion; and a layer which is not doped with the impurity element and is located at the bottom of the recessed portion of the semiconductor film is thinned to make a channel formation region. Further, a gate electrode is formed in the recessed portion over the thinned non impurity doped layer, with an insulating film interposed therebetween.
摘要翻译：在制造半导体器件的方法中，形成在绝缘体上的半导体膜掺杂有杂质元素，其深度小于半导体膜的厚度，从而形成杂质掺杂层; 在杂质掺杂层上形成金属硅化物层; 蚀刻金属硅化物层和半导体膜以形成凹部; 并且不掺杂杂质元素并且位于半导体膜的凹部的底部的层被薄化以形成沟道形成区域。此外，在稀薄的非杂质掺杂层上的凹部中形成有栅电极，其间插入有绝缘膜。

8. 发明申请

US20100237354A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100237354A1
公开(公告)日：2010-09-23
申请号：US12794120
申请日：2010-06-04
申请人： Yoshiaki YAMAMOTO , Koichiro TANAKA , Atsuo ISOBE , Daisuke OHGARANE , Shunpei YAMAZAKI
发明人： Yoshiaki YAMAMOTO , Koichiro TANAKA , Atsuo ISOBE , Daisuke OHGARANE , Shunpei YAMAZAKI
IPC分类号： H01L29/786
CPC分类号： H01L21/6835 , H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L21/84 , H01L23/544 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L27/12 , H01L29/78603 , H01L29/78648 , H01L2221/6835 , H01L2223/5442 , H01L2223/54426 , H01L2223/6677 , H01L2224/16 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2224/83191 , H01L2224/838 , H01L2224/85 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/04941 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/19043 , H01L2924/30105 , H01Q1/38 , H01Q9/285 , H01Q23/00 , Y10S438/982 , H01L2924/00 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.
摘要翻译：本发明的目的是提供一种通过与专利文献1中公开的方法不同的方法从衬底分离薄膜晶体管和包括薄膜晶体管的电路或半导体器件的方法，并且将薄膜晶体管，以及电路或半导体器件到具有柔性的衬底。根据本发明，在绝缘膜上形成大的开口或多个开口，在开口处形成连接到薄膜晶体管的导电膜，并且去除剥离层，然后，将具有薄的薄膜晶体管转置到具有导电膜等的基板上。根据本发明的薄膜晶体管具有通过激光照射而结晶的半导体膜，并且防止剥离层在不被激光照射的激光照射下曝光。

9. 发明申请

US20090096024A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090096024A1
公开(公告)日：2009-04-16
申请号：US12251596
申请日：2008-10-15
申请人： Takashi SHINGU , Daisuke OHGARANE , Yurika SATO
发明人： Takashi SHINGU , Daisuke OHGARANE , Yurika SATO
IPC分类号： H01L47/00 , H01L21/20
CPC分类号： H01L29/66621 , H01L29/458 , H01L29/66757
摘要： In a method for manufacturing a semiconductor device, a semiconductor film formed over an insulator is doped with an impurity element to a depth less than the thickness of the semiconductor film, thereby forming an impurity doped layer; a metal silicide layer is formed on the impurity doped layer; the metal silicide layer and the semiconductor film are etched to form a recessed portion; and a layer which is not doped with the impurity element and is located at the bottom of the recessed portion of the semiconductor film is thinned to make a channel formation region. Further, a gate electrode is formed in the recessed portion over the thinned non impurity doped layer, with an insulating film interposed therebetween.
摘要翻译：在制造半导体器件的方法中，形成在绝缘体上的半导体膜掺杂有杂质元素，其深度小于半导体膜的厚度，从而形成杂质掺杂层; 在杂质掺杂层上形成金属硅化物层; 蚀刻金属硅化物层和半导体膜以形成凹部; 并且不掺杂杂质元素并且位于半导体膜的凹部的底部的层被薄化以形成沟道形成区域。此外，在稀薄的非杂质掺杂层上的凹部中形成有栅电极，其间插入有绝缘膜。

10. 发明申请

US20060110863A1 Semiconductor device, and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060110863A1
公开(公告)日：2006-05-25
申请号：US11274904
申请日：2005-11-16
申请人： Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
发明人： Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
IPC分类号： H01L21/84 , H01L21/30
CPC分类号： H01L21/6835 , H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L21/84 , H01L23/544 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L27/12 , H01L29/78603 , H01L29/78648 , H01L2221/6835 , H01L2223/5442 , H01L2223/54426 , H01L2223/6677 , H01L2224/16 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2224/83191 , H01L2224/838 , H01L2224/85 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/04941 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/19043 , H01L2924/30105 , H01Q1/38 , H01Q9/285 , H01Q23/00 , Y10S438/982 , H01L2924/00 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.
摘要翻译：本发明的目的是提供一种通过与专利文献1中公开的方法不同的方法从衬底分离薄膜晶体管和包括薄膜晶体管的电路或半导体器件的方法，并且将薄膜晶体管，以及电路或半导体器件到具有柔性的衬底。根据本发明，在绝缘膜上形成大的开口或多个开口，在开口处形成连接到薄膜晶体管的导电膜，并且去除剥离层，然后，将具有薄的薄膜晶体管转置到具有导电膜等的基板上。根据本发明的薄膜晶体管具有通过激光照射而结晶的半导体膜，并且防止剥离层在不被激光照射的激光照射下曝光。

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