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1. 发明申请

WO2012148641A3 UV ASSISTED SILYLATION FOR RECOVERY AND PORE SEALING OF DAMAGED LOW K FILMS 审中-公开
标题翻译：紫外光辅助丝网印刷用于损坏的低K膜的恢复和孔密封
公开(公告)号：WO2012148641A3
公开(公告)日：2012-12-20
申请号：PCT/US2012032203
申请日：2012-04-04
申请人： APPLIED MATERIALS INC , XIE BO , DEMOS ALEXANDROS T , YIM KANG SUB , NOWAK THOMAS , CHAN KELVIN
发明人： XIE BO , DEMOS ALEXANDROS T , YIM KANG SUB , NOWAK THOMAS , CHAN KELVIN
IPC分类号： H01L21/31
CPC分类号： H01L21/3105 , H01L21/02203 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/76814 , H01L21/76825 , H01L21/76826
摘要： Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.
摘要翻译：提供了修复受损低k膜的方法。在薄膜加工过程中，例如在蚀刻，灰化和平面化过程中，会发生对低k薄膜的损坏。低k膜的处理导致水存储在膜的孔隙中，并进一步在低k膜结构中形成亲水性化合物。包含紫外（UV）辐射和甲硅烷基化合物的修复过程从孔中除去水并进一步从低k膜结构中除去亲水性化合物。

2. 发明申请

WO2012087493A3 IN-SITU LOW-K CAPPING TO IMPROVE INTEGRATION DAMAGE RESISTANCE 审中-公开
标题翻译：原位低K封盖以改善集成损坏电阻
公开(公告)号：WO2012087493A3
公开(公告)日：2012-10-04
申请号：PCT/US2011062197
申请日：2011-11-28
申请人： APPLIED MATERIALS INC , YIM KANG SUB , XU JIN , NGO SURE , DEMOS ALEXANDROS T
发明人： YIM KANG SUB , XU JIN , NGO SURE , DEMOS ALEXANDROS T
IPC分类号： H01L21/31 , H01L21/3105
CPC分类号： H01L21/02214 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/02362 , H01L21/7682 , H01L21/76829 , H01L2221/1047
摘要： A method and apparatus for forming low-k dielectric layers that include air gaps is provided. In one embodiment, a method of processing a substrate is provided. The method comprises disposing a substrate within a processing region, reacting an organosilicon compound, with an oxidizing gas, and a porogen providing precursor in the presence of a plasma to deposit a porogen containing low-k dielectric layer comprising silicon, oxygen, and carbon on the substrate, depositing a porous dielectric capping layer comprising silicon, oxygen and carbon on the porogen containing low-k dielectric layer, and ultraviolet (UV) curing the porogen containing low-k dielectric layer and the porous dielectric capping layer to remove at least a portion of the porogen from the porogen containing low-k dielectric layer through the porous dielectric capping layer to convert the porogen containing low-k dielectric layer to a porous low-k dielectric layer having air gaps.
摘要翻译：提供了用于形成包括气隙的低k介电层的方法和设备。在一个实施例中，提供了一种处理衬底的方法。该方法包括在处理区域内设置衬底，使有机硅化合物，氧化气体和提供致孔剂的前体在等离子体存在下反应，以沉积包含硅，氧和碳的含致孔剂的低k介电层在包含致孔剂的低k介电层上沉积包含硅，氧和碳的多孔介电覆盖层，以及紫外（UV）固化含致孔剂的低k介电层和多孔介电覆盖层以至少去除来自含致孔剂的低k介电层的致孔剂部分通过多孔介电覆盖层，以将含致孔剂的低k介电层转化为具有气隙的多孔低k介电层。

3. 发明申请

WO2012074816A3 METHOD AND APPARATUS FOR MODULATING WAFER TREATMENT PROFILE IN UV CHAMBER 审中-公开
标题翻译：用于调节UV室中的晶片处理轮廓的方法和设备
公开(公告)号：WO2012074816A3
公开(公告)日：2012-10-04
申请号：PCT/US2011061703
申请日：2011-11-21
申请人： APPLIED MATERIALS INC , BALUJA SANJEEV , ROCHA-ALVAREZ JUAN CARLOS , DEMOS ALEXANDROS T
发明人： BALUJA SANJEEV , ROCHA-ALVAREZ JUAN CARLOS , DEMOS ALEXANDROS T
IPC分类号： H01L21/26 , H01L21/3105
CPC分类号： G02B5/22 , G02B5/208 , H01L21/67115
摘要： A method and apparatus for providing a uniform UV radiation irradiance profile across a surface of a substrate is provided. In one embodiment, a substrate processing tool includes a processing chamber defining a processing region, a substrate support for supporting a substrate within the processing region, an ultraviolet (UV) radiation source spaced apart from the substrate support and configured to transmit ultraviolet radiation toward the substrate positioned on the substrate support, and a light transmissive window positioned between the UV radiation source and the substrate support, the light transmissive window having an optical film layer coated thereon. In one example, the optical film layer has a non-uniform thickness profile in a radial direction, wherein a thickness of the optical film layer at the peripheral area of the light transmissive window is relatively thicker than at the center region of the optical film layer.
摘要翻译：提供了用于在衬底的表面上提供均匀的UV辐射辐照度分布的方法和设备。在一个实施例中，衬底处理工具包括限定处理区域的处理室，用于在处理区域内支撑衬底的衬底支撑件，与衬底支撑件间隔开的紫外（UV）辐射源，并且被配置为朝向位于所述衬底支撑件上的衬底以及位于所述UV辐射源与所述衬底支撑件之间的透光窗，所述透光窗具有涂覆在其上的光学膜层。在一个例子中，光学膜层沿径向具有不均匀的厚度轮廓，其中光透射窗周边区域处的光学膜层的厚度比光学膜层的中心区域处的厚度。

4. 发明申请

WO2009158169A1 SUPERIMPOSITION OF RAPID PERIODIC AND EXTENSIVE POST MULTIPLE SUBSTRATE UV-OZONE CLEAN SEQUENCES FOR HIGH THROUGHPUT AND STABLE SUBSTRATE TO SUBSTRATE PERFORMANCE 审中-公开
标题翻译：快速周期性和扩展后多层底物紫外线臭氧清除序列用于高通量和稳定的基底以达到基础性能
公开(公告)号：WO2009158169A1
公开(公告)日：2009-12-30
申请号：PCT/US2009/046270
申请日：2009-06-04
申请人： APPLIED MATERIALS, INC. , YI, Sang, In , CHAN, Kelvin , NOWAK, Thomas , DEMOS, Alexandros, T.
发明人： YI, Sang, In , CHAN, Kelvin , NOWAK, Thomas , DEMOS, Alexandros, T.
IPC分类号： H01L21/00 , H01L21/02 , H01L21/205
CPC分类号： H01L21/67115 , C23C16/4405 , H01L21/6719 , H01L21/67207
摘要： A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.
摘要翻译：一种用于清洁衬底处理室的方法，包括在限定一个或多个处理区域的处理室内处理一批衬底。处理批次的基板可以在具有各种子步骤的子程序中执行，该子程序包括在处理室内处理来自批料的基板，从处理室移除基板，将臭氧引入处理室，以及将该室暴露于紫外线不到一分钟。可以重复衬底批处理子步骤，直到处理批次中的最后一个衬底。在批次处理最后一个基板之后，该方法包括从处理室移除最后的基板，将臭氧引入处理室; 并将处理室暴露于紫外光下3至15分钟。

5. 发明申请

WO2009009267A1 NOVEL SILICON PRECURSORS TO MAKE ULTRA LOW-K FILMS WITH HIGH MECHANICAL PROPERTIES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：通过等离子体增强化学蒸气沉积法制造具有高机械性能的超低K膜的新型硅前驱体
公开(公告)号：WO2009009267A1
公开(公告)日：2009-01-15
申请号：PCT/US2008/067487
申请日：2008-06-19
申请人： APPLIED MATERIALS, INC. , YIM, Kang, Sub , DEMOS, Alexandros, T.
发明人： YIM, Kang, Sub , DEMOS, Alexandros, T.
IPC分类号： C07F7/00 , C07F7/08
CPC分类号： C23C16/401 , C23C16/56
摘要： A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si-CX-Si or -Si-O-(CH2)n-O-Si-. Low dielectric constant films provided herein include films that include Si-CX-Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.
摘要翻译：提供了一种在基片上沉积低介电常数膜的方法。低介电常数膜通过包括使一种或多种有机硅化合物和致孔剂反应的方法沉积，然后对膜进行后处理以在膜中产生孔。一种或多种有机硅化合物包括具有通式结构Si-CX-Si或-Si-O-（CH2）n-O-Si-的化合物。本文提供的低介电常数膜包括在膜的后处理之前和之后包括Si-CX-Si键的膜。低介电常数膜具有良好的机械和粘附性能以及期望的介电常数。

6. 发明申请

WO2008094792A1 NOVEL AIR GAP INTEGRATION SCHEME 审中-公开
标题翻译：新的空气隙整合方案
公开(公告)号：WO2008094792A1
公开(公告)日：2008-08-07
申请号：PCT/US2008/051731
申请日：2008-01-22
申请人： APPLIED MATERIALS, INC. , DEMOS, Alexandros T. , XIA, Li-Qun , KIM, Bok Hoen , WITTY, Derek R. , M'SAAD, Hichem
发明人： DEMOS, Alexandros T. , XIA, Li-Qun , KIM, Bok Hoen , WITTY, Derek R. , M'SAAD, Hichem
IPC分类号： H01L23/482 , H01L21/469
CPC分类号： H01L21/7682 , C23C16/401 , C23C16/56 , H01L21/02115 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/3146 , H01L21/31633 , H01L21/31695 , H01L21/76811 , H01L21/76835 , H01L2221/1047 , Y10S438/931
摘要： Methods are provided for forming a structure that includes an air gap In one embodiment, a method is provided for forming a damascene structure compnses depositing a porous low dielectric constant layer by a method including reacting an organosilicon compound and a porogen-providing precursor, depositing a porogen-containing material, and removing at least a portion of the porogen -containing matenal, depositing an organic layer on the porous low dielectric constant layer by reacting the porogen-providing precursor, forming a feature defintion in the organic and dielectric constant layer, filling the feature definition with a conductive material, depositing a mask layer on the organic layer, forming apertures in the mask layer to expose the organic layer, removing a portion or all of the organic layer through the apertures, and forming an air gap adjacent the conductive matenal.
摘要翻译：提供用于形成包括气隙的结构的方法。在一个实施例中，提供了一种用于形成镶嵌结构的方法，其包括通过包括使有机硅化合物和致孔剂提供前体反应的方法沉积多孔低介电常数层，致孔剂材料，并且除去至少一部分含致孔剂的马氏体，通过使造孔剂提供前体反应，在有机和介电常数层中形成特征定义，将有机层沉积在多孔低介电常数层上，填充具有导电材料的特征定义，在有机层上沉积掩模层，在掩模层中形成孔以暴露有机层，通过孔去除部分或全部有机层，以及形成邻近导电的气隙 matenal。

7. 发明申请

WO2012064491A3 PROCESS FOR LOWERING ADHESION LAYER THICKNESS AND IMPROVING DAMAGE RESISTANCE FOR THIN ULTRA LOW-K DIELECTRIC FILM 审中-公开
标题翻译：降低超薄低介电常数膜的粘附层厚度和提高抗损伤性的工艺
公开(公告)号：WO2012064491A3
公开(公告)日：2012-08-16
申请号：PCT/US2011057343
申请日：2011-10-21
申请人： APPLIED MATERIALS INC , CHHABRA MAHENDRA , YIM KANG SUB , DEMOS ALEXANDROS T
发明人： CHHABRA MAHENDRA , YIM KANG SUB , DEMOS ALEXANDROS T
IPC分类号： H01L21/31 , H01L21/312
CPC分类号： C23C16/401 , C23C8/10 , C23C16/45523 , C23C16/56
摘要： An improved method for depositing an ultra low dielectric constant film stack is provided. Embodiments of the invention minimize k (dielectric constant) impact from initial stages of depositing the ultra low dielectric constant film stack by reducing a thickness of an oxide adhesion layer in the ultra low dielectric film stack, thereby lowering the thickness non-uniformity of the film stack to less than 2%. The improved process deposits the oxide adhesion layer and the bulk layer in the ultra low dielectric film stack at lower deposition rate and lower plasma density in combination with higher total flow rate, resulting in better packing/ordering of the co-deposited species during film deposition which causes higher mechanical strength and lower porosity.
摘要翻译：提供了一种用于沉积超低介电常数薄膜叠层的改进方法。本发明的实施例通过减小超低介电膜叠层中的氧化物粘附层的厚度，从而使沉积超低介电常数膜叠层的初始阶段的k（介电常数）影响最小化，由此降低膜的厚度不均匀性叠加到小于2％。改进的工艺以较低的沉积速率和较低的等离子体密度结合较高的总流率将氧化物粘附层和体积层沉积在超低介电膜叠层中，导致膜沉积期间共沉积物质的较好堆积/排序这导致更高的机械强度和更低的孔隙率。

8. 发明申请

WO2012087493A2 IN-SITU LOW-K CAPPING TO IMPROVE INTEGRATION DAMAGE RESISTANCE 审中-公开
标题翻译： IN-SITU LOW-K CAPPING提高集成耐损伤性
公开(公告)号：WO2012087493A2
公开(公告)日：2012-06-28
申请号：PCT/US2011/062197
申请日：2011-11-28
申请人： APPLIED MATERIALS, INC. , YIM, Kang Sub , XU, Jin , NGO, Sure , DEMOS, Alexandros T.
发明人： YIM, Kang Sub , XU, Jin , NGO, Sure , DEMOS, Alexandros T.
IPC分类号： H01L21/31 , H01L21/3105
CPC分类号： H01L21/02214 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/02362 , H01L21/7682 , H01L21/76829 , H01L2221/1047
摘要： A method and apparatus for forming low-k dielectric layers that include air gaps is provided. In one embodiment, a method of processing a substrate is provided. The method comprises disposing a substrate within a processing region, reacting an organosilicon compound, with an oxidizing gas, and a porogen providing precursor in the presence of a plasma to deposit a porogen containing low-k dielectric layer comprising silicon, oxygen, and carbon on the substrate, depositing a porous dielectric capping layer comprising silicon, oxygen and carbon on the porogen containing low-k dielectric layer, and ultraviolet (UV) curing the porogen containing low-k dielectric layer and the porous dielectric capping layer to remove at least a portion of the porogen from the porogen containing low-k dielectric layer through the porous dielectric capping layer to convert the porogen containing low-k dielectric layer to a porous low-k dielectric layer having air gaps.
摘要翻译：提供了一种用于形成包括气隙的低k电介质层的方法和装置。在一个实施例中，提供了一种处理衬底的方法。该方法包括在等离子体存在下将处理区域内的底物，有机硅化合物与氧化气体和造孔剂提供前体反应，将含有硅，氧和碳的低k电介质层的致孔剂沉积在在包含低k电介质层的致孔剂上沉积包含硅，氧和碳的多孔电介质覆盖层，以及紫外线（UV）固化包含低k电介质层的致孔剂和多孔介电覆盖层以除去至少一个致孔剂部分由含有低k电介质层的致孔剂穿过多孔介电覆盖层，以将含有低介电常数的介电层转化为具有气隙的多孔低k电介质层。

9. 发明申请

WO2012054206A3 QUARTZ SHOWERHEAD FOR NANOCURE UV CHAMBER 审中-公开
标题翻译： QUARTZ淋浴器用于纳米紫外线灯
公开(公告)号：WO2012054206A3
公开(公告)日：2012-06-21
申请号：PCT/US2011054014
申请日：2011-09-29
申请人： APPLIED MATERIALS INC , BALUJA SANJEEV , ROCHA-ALVAREZ JUAN CARLOS , DEMOS ALEXANDROS T , NOWAK THOMAS , ZHOU JIANHUA
发明人： BALUJA SANJEEV , ROCHA-ALVAREZ JUAN CARLOS , DEMOS ALEXANDROS T , NOWAK THOMAS , ZHOU JIANHUA
IPC分类号： H01L21/3105 , H01L21/263
CPC分类号： C23C16/56 , C23C16/4405 , C23C16/45565 , C23C16/482 , H01L21/6719 , H01L21/67742 , Y10T137/0391
摘要： Embodiments of the invention generally provide apparatuses and methods for controlling the gas flow profile within a processing chamber. In one embodiment, a processing tool includes an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and the substrate support, and a transparent showerhead disposed within the processing region between the window and the substrate support and having one or more transparent showerhead passages between upper and lower processing regions. The processing tool also includes a gas distribution ring having one or more gas distribution ring passages between a gas distribution ring inner channel and the upper processing region and a gas outlet ring positioned below the gas distribution ring, the gas outlet ring having one or more gas outlet passages between a gas outlet ring inner channel within the gas outlet ring and the lower processing region.
摘要翻译：本发明的实施例通常提供用于控制处理室内的气流分布的装置和方法。在一个实施例中，处理工具包括限定处理区域的紫外线处理室，衬底支撑件，设置在UV辐射源和衬底支撑件之间的窗口，以及布置在窗口和衬底支撑件之间的处理区域内的透明花洒并且在上下处理区域之间具有一个或多个透明花洒通道。处理工具还包括气体分配环，气体分配环具有在气体分配环内部通道和上部加工区域之间的一个或多个气体分配环通道和位于气体分配环下方的气体出口环，气体出口环具有一个或多个气体气体出口环内的气体出口环内部通道和下部加工区域之间的出口通道。

10. 发明申请

WO2012064491A2 PROCESS FOR LOWERING ADHESION LAYER THICKNESS AND IMPROVING DAMAGE RESISTANCE FOR THIN ULTRA LOW-K DIELECTRIC FILM 审中-公开
标题翻译：降低粘结层厚度的方法，提高薄膜超低介电膜的耐损伤性
公开(公告)号：WO2012064491A2
公开(公告)日：2012-05-18
申请号：PCT/US2011/057343
申请日：2011-10-21
申请人： APPLIED MATERIALS, INC. , CHHABRA, Mahendra , YIM, Kang Sub , DEMOS, Alexandros, T.
发明人： CHHABRA, Mahendra , YIM, Kang Sub , DEMOS, Alexandros, T.
IPC分类号： H01L21/31 , H01L21/312
CPC分类号： C23C16/401 , C23C8/10 , C23C16/45523 , C23C16/56
摘要： An improved method for depositing an ultra low dielectric constant film stack is provided. Embodiments of the invention minimize k (dielectric constant) impact from initial stages of depositing the ultra low dielectric constant film stack by reducing a thickness of an oxide adhesion layer in the ultra low dielectric film stack, thereby lowering the thickness non-uniformity of the film stack to less than 2%. The improved process deposits the oxide adhesion layer and the bulk layer in the ultra low dielectric film stack at lower deposition rate and lower plasma density in combination with higher total flow rate, resulting in better packing/ordering of the co-deposited species during film deposition which causes higher mechanical strength and lower porosity.
摘要翻译：提供了一种用于沉积超低介电常数膜堆叠的改进方法。本发明的实施例通过减小超低介电膜堆叠中的氧化物粘附层的厚度来最小化沉积超低介电常数膜堆叠的初始阶段的k（介电常数）冲击，从而降低膜的厚度不均匀性堆积小于2％。改进的方法在较低的沉积速率和较低的等离子体密度下结合较高的总流速沉积了超低介电膜堆叠中的氧化物粘附层和本体层，从而在膜沉积期间共同沉积物质的更好的填充/排序这导致较高的机械强度和较低的孔隙率。

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