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1. 发明申请

WO2014003893A1 MICROWAVE EXCURSION DETECTION FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：用于半导体处理的微波检测
公开(公告)号：WO2014003893A1
公开(公告)日：2014-01-03
申请号：PCT/US2013/039992
申请日：2013-05-07
申请人： APPLIED MATERIALS, INC. , HENDRICKSON, Scott, A. , KRIVULINA, Liliya , ROCHA-ALVAREZ, Juan, Carlos , BALUJA, Sanjeev
发明人： HENDRICKSON, Scott, A. , KRIVULINA, Liliya , ROCHA-ALVAREZ, Juan, Carlos , BALUJA, Sanjeev
IPC分类号： H01L21/205 , H01L21/66
CPC分类号： H05B3/0047
摘要： Devices and methods are provided for monitoring low-level microwave excursions from a UV curing system to determine if equipment is damaged, such as screen tears or improper assembly of UV lampheads. A radio frequency (RF) detector may be used to detect microwaves in a range of about 0.2 - 5 mW/cm 2 , wherein the RF detector comprises an antenna with a hoop shaped portion, a circuit board having a diode detector and an amplifier circuit, a housing, and a bracket coupled to the housing that is suitable for coupling the RF detector to the UV curing system. An alarm threshold may also be set, which can be correlated to microwave levels at or below levels that could cause damage to semiconductor devices being processed. A substrate processing system comprising an RF detector is also provided.
摘要翻译：设备和方法用于监测来自UV固化系统的低级微波偏移，以确定设备是否损坏，如屏幕撕裂或UV灯头的组装不当。可以使用射频（RF）检测器来检测约0.2-5mW / cm 2范围内的微波，其中RF检测器包括具有环形部分的天线，具有二极管检测器和放大器电路的电路板，壳体和联接到壳体的支架，其适于将RF检测器耦合到UV固化系统。还可以设置警报阈值，其可以与可能对正被处理的半导体器件造成损坏的等于或低于水平的微波水平相关。还提供了包括RF检测器的衬底处理系统。

2. 发明申请

WO2012074816A3 METHOD AND APPARATUS FOR MODULATING WAFER TREATMENT PROFILE IN UV CHAMBER 审中-公开
标题翻译：用于调节UV室中的晶片处理轮廓的方法和设备
公开(公告)号：WO2012074816A3
公开(公告)日：2012-10-04
申请号：PCT/US2011061703
申请日：2011-11-21
申请人： APPLIED MATERIALS INC , BALUJA SANJEEV , ROCHA-ALVAREZ JUAN CARLOS , DEMOS ALEXANDROS T
发明人： BALUJA SANJEEV , ROCHA-ALVAREZ JUAN CARLOS , DEMOS ALEXANDROS T
IPC分类号： H01L21/26 , H01L21/3105
CPC分类号： G02B5/22 , G02B5/208 , H01L21/67115
摘要： A method and apparatus for providing a uniform UV radiation irradiance profile across a surface of a substrate is provided. In one embodiment, a substrate processing tool includes a processing chamber defining a processing region, a substrate support for supporting a substrate within the processing region, an ultraviolet (UV) radiation source spaced apart from the substrate support and configured to transmit ultraviolet radiation toward the substrate positioned on the substrate support, and a light transmissive window positioned between the UV radiation source and the substrate support, the light transmissive window having an optical film layer coated thereon. In one example, the optical film layer has a non-uniform thickness profile in a radial direction, wherein a thickness of the optical film layer at the peripheral area of the light transmissive window is relatively thicker than at the center region of the optical film layer.
摘要翻译：提供了用于在衬底的表面上提供均匀的UV辐射辐照度分布的方法和设备。在一个实施例中，衬底处理工具包括限定处理区域的处理室，用于在处理区域内支撑衬底的衬底支撑件，与衬底支撑件间隔开的紫外（UV）辐射源，并且被配置为朝向位于所述衬底支撑件上的衬底以及位于所述UV辐射源与所述衬底支撑件之间的透光窗，所述透光窗具有涂覆在其上的光学膜层。在一个例子中，光学膜层沿径向具有不均匀的厚度轮廓，其中光透射窗周边区域处的光学膜层的厚度比光学膜层的中心区域处的厚度。

3. 发明申请

WO2011153484A2 SILICON DIOXIDE LAYER DEPOSITED WITH BDEAS 审中-公开
标题翻译：二氧化硅二氧化硅层与BDEAS相结合
公开(公告)号：WO2011153484A2
公开(公告)日：2011-12-08
申请号：PCT/US2011/039145
申请日：2011-06-03
申请人： APPLIED MATERIALS, INC. , LEE, Yong-Won , ZUBKOV, Vladimir , SHEK, Mei-Yee , XIA, Li-Qun , IYENGAR, Prahallad , BALUJA, Sanjeev , HENDRICKSON, Scott A. , ROCHA-ALVAREZ, Juan Carlos , NOWAK, Thomas , WITTY, Derrick R.
发明人： LEE, Yong-Won , ZUBKOV, Vladimir , SHEK, Mei-Yee , XIA, Li-Qun , IYENGAR, Prahallad , BALUJA, Sanjeev , HENDRICKSON, Scott A. , ROCHA-ALVAREZ, Juan Carlos , NOWAK, Thomas , WITTY, Derrick R.
IPC分类号： C23C16/04 , C23C16/44 , H01L21/205
CPC分类号： H01L21/02271 , C23C16/402 , H01L21/02164 , H01L21/0332 , H01L21/76898
摘要： A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes to form an oxide liner for through-silicon vias.
摘要翻译：使用包含BDEAS和含氧气体如臭氧的工艺气体将二氧化硅层沉积到衬底上。二氧化硅层可以是包括抗蚀剂层的抗蚀刻堆叠的一部分。在另一个版本中，二氧化硅层被沉积到通孔中以形成用于通硅通孔的氧化物衬垫。

4. 发明申请

WO2013106171A1 METHOD FOR SEASONING UV CHAMBER OPTICAL COMPONENTS TO AVOID DEGRADATION 审中-公开
标题翻译：用于分解紫外线光学元件以避免降解的方法
公开(公告)号：WO2013106171A1
公开(公告)日：2013-07-18
申请号：PCT/US2012/070396
申请日：2012-12-18
申请人： APPLIED MATERIALS, INC. , BALUJA, Sanjeev , DEMOS, Alexandros, T. , XIE, Bo , ROCHA-ALVAREZ, Juan Carlos
发明人： BALUJA, Sanjeev , DEMOS, Alexandros, T. , XIE, Bo , ROCHA-ALVAREZ, Juan Carlos
IPC分类号： C23C16/44 , H01L21/205
CPC分类号： B05D3/066 , C23C16/4404 , C23C16/4405
摘要： Methods for depositing a carbon-based seasoning layer on exposed surfaces of the optical components within a UV processing chamber are disclosed. In one embodiment, the method includes flowing a carbon-containing precursor radially inwardly across exposed surfaces of optical components within the thermal processing chamber from a circumference of the optical components, exposing the carbon-containing precursor to a thermal radiation emitted from a heating source to form a carbon-based seasoning layer on the exposed surfaces of the optical components, exposing the carbon-based seasoning layer to ozone, wherein the ozone is introduced into the processing chamber by flowing the ozone radially inwardly across exposed surfaces of optical components from the circumference of the optical components, heating the optical components to a temperature of about 400°C or above while flowing the ozone to remove the carbon-based seasoning layer from exposed surfaces of the optical components.
摘要翻译：公开了在UV处理室内的光学部件的暴露表面上沉积碳基调味剂层的方法。在一个实施例中，该方法包括使含碳前驱体从光学部件的圆周径向向内流过热处理室内的光学部件的暴露表面，将含碳前体暴露于从加热源发射的热辐射至在光学部件的暴露表面上形成碳基调味剂层，将碳基调味剂层暴露于臭氧，其中臭氧通过径向向内流过来自圆周的光学部件的暴露表面而将臭氧引入处理室的光学部件，将光学部件加热至约400℃以上的温度，同时使臭氧流过，从而从光学部件的露出表面除去碳类调味剂层。

5. 发明申请

WO2012102997A3 PULSE METHOD OF OXIDIZING SIDEWALL DIELECTRICS FOR HIGH CAPACITANCE APPLICATIONS 审中-公开
标题翻译：用于高电容应用的氧化电介质的脉冲方法
公开(公告)号：WO2012102997A3
公开(公告)日：2012-11-01
申请号：PCT/US2012022195
申请日：2012-01-23
申请人： APPLIED MATERIALS INC , XIE BO , DEMOS ALEXANDROS T , ROCHA-ALVAREZ JUAN CARLOS , BALUJA SANJEEV
发明人： XIE BO , DEMOS ALEXANDROS T , ROCHA-ALVAREZ JUAN CARLOS , BALUJA SANJEEV
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L28/40 , H01L21/3105 , H01L28/90
摘要： The present invention provides systems, methods and apparatus for manufacturing a memory cell. The invention includes forming a feature having sidewalls in a first dielectric material; forming a first conductive material on the sidewalls of the feature; depositing a layer of a second dielectric material on the conductive material; and exposing the second dielectric material to oxidizing species and ultraviolet light to oxidize the second dielectric material. Numerous additional aspects are disclosed.
摘要翻译：本发明提供用于制造存储单元的系统，方法和装置。本发明包括在第一介电材料中形成具有侧壁的特征; 在所述特征的侧壁上形成第一导电材料; 在导电材料上沉积第二介电材料层; 以及将所述第二电介质材料暴露于氧化物质和紫外光以氧化所述第二电介质材料。公开了许多附加方面。

6. 发明申请

WO2012071130A3 DUAL-BULB LAMPHEAD CONTROL METHODOLOGY 审中-公开
标题翻译：双灯头控制方法
公开(公告)号：WO2012071130A3
公开(公告)日：2012-08-16
申请号：PCT/US2011058137
申请日：2011-10-27
申请人： APPLIED MATERIALS INC , YANG YAO-HUNG , KANGUDE ABHIJIT , BALUJA SANJEEV , MARTINELLI MICHAEL , KRIVULINA LILIYA , NOWAK THOMAS , ROCHA-ALVAREZ JUAN CARLOS , HENDRICKSON SCOTT
发明人： YANG YAO-HUNG , KANGUDE ABHIJIT , BALUJA SANJEEV , MARTINELLI MICHAEL , KRIVULINA LILIYA , NOWAK THOMAS , ROCHA-ALVAREZ JUAN CARLOS , HENDRICKSON SCOTT
IPC分类号： H01L21/26 , H01L21/205
CPC分类号： H05B41/3921 , H01L21/67115 , H05B41/3922
摘要： The present invention generally relates to methods of controlling UV lamp output to increase irradiance uniformity. The methods generally include determining a baseline irradiance within a chamber, determining the relative irradiance on a substrate corresponding to a first lamp and a second lamp, and determining correction or compensation factors based on the relative irradiances and the baseline irradiance. The lamps are then adjusted via closed loop control using the correction or compensation factors to individually adjust the lamps to the desired output. The lamps may optionally be adjusted to equal irradiances prior to adjusting the lamps to the desired output. The closed loop control ensures process uniformity from substrate to substrate. The irradiance measurement and the correction or compensation factors allow for adjustment of lamp set points due to chamber component degradation, chamber component replacement, or chamber cleaning.
摘要翻译：本发明一般涉及控制UV灯输出以增加辐照度均匀性的方法。该方法通常包括确定室内的基线辐照度，确定对应于第一灯和第二灯的基板上的相对辐照度，以及基于相对辐照度和基线辐照度确定校正或补偿因子。然后使用校正或补偿因子通过闭环控制来调节灯，以分别将灯调节到所需的输出。在将灯调节到期望的输出之前，灯可以可选地被调节成等于辐照度。闭环控制可确保从基材到基材的工艺均匀性。辐照度测量和校正或补偿因数允许由于腔室部件退化，腔室部件更换或腔室清洁而调整灯设定点。

7. 发明申请

WO2012054200A3 DUAL DELIVERY CHAMBER DESIGN 审中-公开
标题翻译：双重交付室设计
公开(公告)号：WO2012054200A3
公开(公告)日：2012-06-14
申请号：PCT/US2011053744
申请日：2011-09-28
申请人： APPLIED MATERIALS INC , IYENGAR PRAHALLAD , BALUJA SANJEEV , DUBOIS DALE R , ROCHA-ALVAREZ JUAN CARLOS , NOWAK THOMAS , HENDRICKSON SCOTT A , LEE YONG-WON , SHEK MEI-YEE , XIA LI-QUN , WITTY DEREK R
发明人： IYENGAR PRAHALLAD , BALUJA SANJEEV , DUBOIS DALE R , ROCHA-ALVAREZ JUAN CARLOS , NOWAK THOMAS , HENDRICKSON SCOTT A , LEE YONG-WON , SHEK MEI-YEE , XIA LI-QUN , WITTY DEREK R
IPC分类号： H01L21/205
CPC分类号： H01L21/02164 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/463 , C23C16/5096 , H01L21/02274
摘要： A substrate processing system includes a thermal processor or a plasma generator adjacent to a processing chamber. A first processing gas enters the thermal processor or plasma generator. The first processing gas then flows directly through a showerhead into the processing chamber. A second processing gas flows through a second flow path through the showerhead. The first and second processing gases are mixed below the showerhead and a layer of material is deposited on a substrate under the showerhead.
摘要翻译：衬底处理系统包括与处理室相邻的热处理器或等离子体发生器。第一处理气体进入热处理器或等离子体发生器。然后，第一处理气体直接通过喷头流入处理室。第二处理气体流过穿过喷头的第二流路。第一和第二处理气体混合在喷淋头下面，并且一层材料沉积在喷头下方的基底上。

8. 发明申请

WO2012054206A2 QUARTZ SHOWERHEAD FOR NANOCURE UV CHAMBER 审中-公开
标题翻译：用于纳米紫外线室的石英喷头
公开(公告)号：WO2012054206A2
公开(公告)日：2012-04-26
申请号：PCT/US2011/054014
申请日：2011-09-29
申请人： APPLIED MATERIALS, INC. , BALUJA, Sanjeev , ROCHA-ALVAREZ, Juan Carlos , DEMOS, Alexandros T. , NOWAK, Thomas , ZHOU, Jianhua
发明人： BALUJA, Sanjeev , ROCHA-ALVAREZ, Juan Carlos , DEMOS, Alexandros T. , NOWAK, Thomas , ZHOU, Jianhua
IPC分类号： H01L21/3105 , H01L21/263
CPC分类号： C23C16/56 , C23C16/4405 , C23C16/45565 , C23C16/482 , H01L21/6719 , H01L21/67742 , Y10T137/0391
摘要： Embodiments of the invention generally provide apparatuses and methods for controlling the gas flow profile within a processing chamber. In one embodiment, a processing tool includes an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and the substrate support, and a transparent showerhead disposed within the processing region between the window and the substrate support and having one or more transparent showerhead passages between upper and lower processing regions. The processing tool also includes a gas distribution ring having one or more gas distribution ring passages between a gas distribution ring inner channel and the upper processing region and a gas outlet ring positioned below the gas distribution ring, the gas outlet ring having one or more gas outlet passages between a gas outlet ring inner channel within the gas outlet ring and the lower processing region.
摘要翻译：本发明的实施例通常提供用于控制处理室内的气流轮廓的装置和方法。在一个实施例中，处理工具包括限定处理区域的紫外线处理室，衬底支撑件，设置在UV辐射源和衬底支撑件之间的窗口以及布置在窗口和衬底支撑件之间的处理区域内的透明喷头并在上部和下部处理区域之间具有一个或多个透明喷头通道。加工工具还包括气体分配环，其具有在气体分配环内部通道和上部处理区域之间的一个或多个气体分配环通道和位于气体分配环下方的气体出口环，气体出口环具有一个或多个气体出气环内气体出口环内通道与下加工区之间的出口通道。

9. 发明申请

WO2012054200A2 DUAL DELIVERY CHAMBER DESIGN 审中-公开
标题翻译：双送货室设计
公开(公告)号：WO2012054200A2
公开(公告)日：2012-04-26
申请号：PCT/US2011/053744
申请日：2011-09-28
申请人： APPLIED MATERIALS, INC. , IYENGAR, Prahallad , BALUJA, Sanjeev , DUBOIS, Dale, R. , ROCHA-ALVAREZ, Juan, Carlos , NOWAK, Thomas , HENDRICKSON, Scott, A. , LEE, Yong-Won , SHEK, Mei-Yee , XIA, Li-Qun , WITTY, Derek, R.
发明人： IYENGAR, Prahallad , BALUJA, Sanjeev , DUBOIS, Dale, R. , ROCHA-ALVAREZ, Juan, Carlos , NOWAK, Thomas , HENDRICKSON, Scott, A. , LEE, Yong-Won , SHEK, Mei-Yee , XIA, Li-Qun , WITTY, Derek, R.
IPC分类号： H01L21/205
CPC分类号： H01L21/02164 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/463 , C23C16/5096 , H01L21/02274
摘要： A substrate processing system includes a thermal processor or a plasma generator adjacent to a processing chamber. A first processing gas enters the thermal processor or plasma generator. The first processing gas then flows directly through a showerhead into the processing chamber. A second processing gas flows through a second flow path through the showerhead. The first and second processing gases are mixed below the showerhead and a layer of material is deposited on a substrate under the showerhead.
摘要翻译：衬底处理系统包括与处理室相邻的热处理器或等离子体发生器。第一处理气体进入热处理器或等离子体发生器。第一处理气体然后直接流过喷头进入处理室。第二处理气体流经喷头的第二流动路径。第一和第二处理气体在喷头下面混合，一层材料沉积在喷头下面的基片上。

10. 发明申请

WO2011075437A3 MULTIFUNCTIONAL HEATER/CHILLER PEDESTAL FOR WIDE RANGE WAFER TEMPERATURE CONTROL 审中-公开
标题翻译：多功能加热器/冷却器底座，用于宽范围晶片温度控制
公开(公告)号：WO2011075437A3
公开(公告)日：2011-11-17
申请号：PCT/US2010060069
申请日：2010-12-13
申请人： APPLIED MATERIALS INC , YAP LIPYEOW , NGUYEN TUAN ANH MIKE , DU BOIS DALE R , BALUJA SANJEEV , NOWAK THOMAS , ROCHA-ALVAREZ JUAN CARLOS , ZHOU JIANHUA
发明人： YAP LIPYEOW , NGUYEN TUAN ANH MIKE , DU BOIS DALE R , BALUJA SANJEEV , NOWAK THOMAS , ROCHA-ALVAREZ JUAN CARLOS , ZHOU JIANHUA
IPC分类号： H01L21/68 , C23C16/458 , H01L21/205 , H01L21/683
CPC分类号： H01L21/67109 , H01L21/68792
摘要： Embodiments of the invention generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, a pedestal for a semiconductor processing chamber is provided. The pedestal comprises a substrate support comprising a conductive material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to the substrate support at a first end and a mating interface at an opposing end, the hollow shaft comprising a shaft body having a hollow core, and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel.
摘要翻译：本发明的实施例总体上涉及半导体处理室，并且更具体地涉及用于半导体处理室的加热的支撑基座。在一个实施例中，提供了用于半导体处理室的基座。基座包括基板支撑件，该基板支撑件包括导电材料并且具有用于接收基板的支撑表面，封装在基板支撑件内的电阻加热器，在第一端耦合到基板支撑件的空心轴和在相对端处的配合接口，所述中空轴包括具有中空芯体的轴体以及环绕所述中空芯体且设置在所述轴体内用于经由内部冷却路径从所述基座移除热量的冷却通道组件，其中所述衬底支撑件具有位于加热元件和环形冷却通道。

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