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1. 发明申请

WO2012148641A3 UV ASSISTED SILYLATION FOR RECOVERY AND PORE SEALING OF DAMAGED LOW K FILMS 审中-公开
标题翻译：紫外光辅助丝网印刷用于损坏的低K膜的恢复和孔密封
公开(公告)号：WO2012148641A3
公开(公告)日：2012-12-20
申请号：PCT/US2012032203
申请日：2012-04-04
申请人： APPLIED MATERIALS INC , XIE BO , DEMOS ALEXANDROS T , YIM KANG SUB , NOWAK THOMAS , CHAN KELVIN
发明人： XIE BO , DEMOS ALEXANDROS T , YIM KANG SUB , NOWAK THOMAS , CHAN KELVIN
IPC分类号： H01L21/31
CPC分类号： H01L21/3105 , H01L21/02203 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/76814 , H01L21/76825 , H01L21/76826
摘要： Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.
摘要翻译：提供了修复受损低k膜的方法。在薄膜加工过程中，例如在蚀刻，灰化和平面化过程中，会发生对低k薄膜的损坏。低k膜的处理导致水存储在膜的孔隙中，并进一步在低k膜结构中形成亲水性化合物。包含紫外（UV）辐射和甲硅烷基化合物的修复过程从孔中除去水并进一步从低k膜结构中除去亲水性化合物。

2. 发明申请

WO2012087493A3 IN-SITU LOW-K CAPPING TO IMPROVE INTEGRATION DAMAGE RESISTANCE 审中-公开
标题翻译：原位低K封盖以改善集成损坏电阻
公开(公告)号：WO2012087493A3
公开(公告)日：2012-10-04
申请号：PCT/US2011062197
申请日：2011-11-28
申请人： APPLIED MATERIALS INC , YIM KANG SUB , XU JIN , NGO SURE , DEMOS ALEXANDROS T
发明人： YIM KANG SUB , XU JIN , NGO SURE , DEMOS ALEXANDROS T
IPC分类号： H01L21/31 , H01L21/3105
CPC分类号： H01L21/02214 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/02362 , H01L21/7682 , H01L21/76829 , H01L2221/1047
摘要： A method and apparatus for forming low-k dielectric layers that include air gaps is provided. In one embodiment, a method of processing a substrate is provided. The method comprises disposing a substrate within a processing region, reacting an organosilicon compound, with an oxidizing gas, and a porogen providing precursor in the presence of a plasma to deposit a porogen containing low-k dielectric layer comprising silicon, oxygen, and carbon on the substrate, depositing a porous dielectric capping layer comprising silicon, oxygen and carbon on the porogen containing low-k dielectric layer, and ultraviolet (UV) curing the porogen containing low-k dielectric layer and the porous dielectric capping layer to remove at least a portion of the porogen from the porogen containing low-k dielectric layer through the porous dielectric capping layer to convert the porogen containing low-k dielectric layer to a porous low-k dielectric layer having air gaps.
摘要翻译：提供了用于形成包括气隙的低k介电层的方法和设备。在一个实施例中，提供了一种处理衬底的方法。该方法包括在处理区域内设置衬底，使有机硅化合物，氧化气体和提供致孔剂的前体在等离子体存在下反应，以沉积包含硅，氧和碳的含致孔剂的低k介电层在包含致孔剂的低k介电层上沉积包含硅，氧和碳的多孔介电覆盖层，以及紫外（UV）固化含致孔剂的低k介电层和多孔介电覆盖层以至少去除来自含致孔剂的低k介电层的致孔剂部分通过多孔介电覆盖层，以将含致孔剂的低k介电层转化为具有气隙的多孔低k介电层。

3. 发明申请

WO2009009267A1 NOVEL SILICON PRECURSORS TO MAKE ULTRA LOW-K FILMS WITH HIGH MECHANICAL PROPERTIES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：通过等离子体增强化学蒸气沉积法制造具有高机械性能的超低K膜的新型硅前驱体
公开(公告)号：WO2009009267A1
公开(公告)日：2009-01-15
申请号：PCT/US2008/067487
申请日：2008-06-19
申请人： APPLIED MATERIALS, INC. , YIM, Kang, Sub , DEMOS, Alexandros, T.
发明人： YIM, Kang, Sub , DEMOS, Alexandros, T.
IPC分类号： C07F7/00 , C07F7/08
CPC分类号： C23C16/401 , C23C16/56
摘要： A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si-CX-Si or -Si-O-(CH2)n-O-Si-. Low dielectric constant films provided herein include films that include Si-CX-Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.
摘要翻译：提供了一种在基片上沉积低介电常数膜的方法。低介电常数膜通过包括使一种或多种有机硅化合物和致孔剂反应的方法沉积，然后对膜进行后处理以在膜中产生孔。一种或多种有机硅化合物包括具有通式结构Si-CX-Si或-Si-O-（CH2）n-O-Si-的化合物。本文提供的低介电常数膜包括在膜的后处理之前和之后包括Si-CX-Si键的膜。低介电常数膜具有良好的机械和粘附性能以及期望的介电常数。

4. 发明申请

WO2008118729A1 STRUCTURE AND METHOD FOR SICOH INTERFACES WITH INCREASED MECHANICAL STRENGTH 审中-公开
标题翻译：具有增加的机械强度的SICOH接口的结构和方法
公开(公告)号：WO2008118729A1
公开(公告)日：2008-10-02
申请号：PCT/US2008/057600
申请日：2008-03-20
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , APPLIED MATERIALS, INC. , EDELSTEIN, Daniel, C. , DEMOS, Alexandros , GATES, Stephen, M. , GRILL, Alfred , MOLIS, Steven, E. , NGUYEN, Vu Ngoc, Tran , REITER, Steven , RESTAINO, Darryl, D. , YIM, Kang, Sub
发明人： EDELSTEIN, Daniel, C. , DEMOS, Alexandros , GATES, Stephen, M. , GRILL, Alfred , MOLIS, Steven, E. , NGUYEN, Vu Ngoc, Tran , REITER, Steven , RESTAINO, Darryl, D. , YIM, Kang, Sub
IPC分类号： H01L21/4763
CPC分类号： C23C16/401 , C23C16/0272 , C23C16/029 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31695 , H01L21/7682 , H01L21/76832 , H01L21/76834 , H01L21/76835 , H01L2221/1047 , Y10T428/24851 , Y10T428/249961
摘要： Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.
摘要翻译：公开了一种用于形成包括具有增加的机械强度的SiCOH层的结构的结构和方法。该结构包括具有电介质或导电材料层的基底，介电层或导电材料层上的氧化物层，氧化物层基本上不含碳，氧化物层上的渐变过渡层，梯度过渡层基本上在与氧化物层的界面处没有碳并逐渐向多孔SiCOH层增加碳，并且在渐变过渡层上的多孔SiCOH（pSiCOH）层，多孔pSiCOH层在整个层中具有均匀的组成。该方法包括一种方法，其中在渐变过渡层中，在碳浓度中没有峰，而在氧浓度中没有下降。

5. 发明申请

WO2012064491A3 PROCESS FOR LOWERING ADHESION LAYER THICKNESS AND IMPROVING DAMAGE RESISTANCE FOR THIN ULTRA LOW-K DIELECTRIC FILM 审中-公开
标题翻译：降低超薄低介电常数膜的粘附层厚度和提高抗损伤性的工艺
公开(公告)号：WO2012064491A3
公开(公告)日：2012-08-16
申请号：PCT/US2011057343
申请日：2011-10-21
申请人： APPLIED MATERIALS INC , CHHABRA MAHENDRA , YIM KANG SUB , DEMOS ALEXANDROS T
发明人： CHHABRA MAHENDRA , YIM KANG SUB , DEMOS ALEXANDROS T
IPC分类号： H01L21/31 , H01L21/312
CPC分类号： C23C16/401 , C23C8/10 , C23C16/45523 , C23C16/56
摘要： An improved method for depositing an ultra low dielectric constant film stack is provided. Embodiments of the invention minimize k (dielectric constant) impact from initial stages of depositing the ultra low dielectric constant film stack by reducing a thickness of an oxide adhesion layer in the ultra low dielectric film stack, thereby lowering the thickness non-uniformity of the film stack to less than 2%. The improved process deposits the oxide adhesion layer and the bulk layer in the ultra low dielectric film stack at lower deposition rate and lower plasma density in combination with higher total flow rate, resulting in better packing/ordering of the co-deposited species during film deposition which causes higher mechanical strength and lower porosity.
摘要翻译：提供了一种用于沉积超低介电常数薄膜叠层的改进方法。本发明的实施例通过减小超低介电膜叠层中的氧化物粘附层的厚度，从而使沉积超低介电常数膜叠层的初始阶段的k（介电常数）影响最小化，由此降低膜的厚度不均匀性叠加到小于2％。改进的工艺以较低的沉积速率和较低的等离子体密度结合较高的总流率将氧化物粘附层和体积层沉积在超低介电膜叠层中，导致膜沉积期间共沉积物质的较好堆积/排序这导致更高的机械强度和更低的孔隙率。

6. 发明申请

WO2012087493A2 IN-SITU LOW-K CAPPING TO IMPROVE INTEGRATION DAMAGE RESISTANCE 审中-公开
标题翻译： IN-SITU LOW-K CAPPING提高集成耐损伤性
公开(公告)号：WO2012087493A2
公开(公告)日：2012-06-28
申请号：PCT/US2011/062197
申请日：2011-11-28
申请人： APPLIED MATERIALS, INC. , YIM, Kang Sub , XU, Jin , NGO, Sure , DEMOS, Alexandros T.
发明人： YIM, Kang Sub , XU, Jin , NGO, Sure , DEMOS, Alexandros T.
IPC分类号： H01L21/31 , H01L21/3105
CPC分类号： H01L21/02214 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/02362 , H01L21/7682 , H01L21/76829 , H01L2221/1047
摘要： A method and apparatus for forming low-k dielectric layers that include air gaps is provided. In one embodiment, a method of processing a substrate is provided. The method comprises disposing a substrate within a processing region, reacting an organosilicon compound, with an oxidizing gas, and a porogen providing precursor in the presence of a plasma to deposit a porogen containing low-k dielectric layer comprising silicon, oxygen, and carbon on the substrate, depositing a porous dielectric capping layer comprising silicon, oxygen and carbon on the porogen containing low-k dielectric layer, and ultraviolet (UV) curing the porogen containing low-k dielectric layer and the porous dielectric capping layer to remove at least a portion of the porogen from the porogen containing low-k dielectric layer through the porous dielectric capping layer to convert the porogen containing low-k dielectric layer to a porous low-k dielectric layer having air gaps.
摘要翻译：提供了一种用于形成包括气隙的低k电介质层的方法和装置。在一个实施例中，提供了一种处理衬底的方法。该方法包括在等离子体存在下将处理区域内的底物，有机硅化合物与氧化气体和造孔剂提供前体反应，将含有硅，氧和碳的低k电介质层的致孔剂沉积在在包含低k电介质层的致孔剂上沉积包含硅，氧和碳的多孔电介质覆盖层，以及紫外线（UV）固化包含低k电介质层的致孔剂和多孔介电覆盖层以除去至少一个致孔剂部分由含有低k电介质层的致孔剂穿过多孔介电覆盖层，以将含有低介电常数的介电层转化为具有气隙的多孔低k电介质层。

7. 发明申请

WO2012064491A2 PROCESS FOR LOWERING ADHESION LAYER THICKNESS AND IMPROVING DAMAGE RESISTANCE FOR THIN ULTRA LOW-K DIELECTRIC FILM 审中-公开
标题翻译：降低粘结层厚度的方法，提高薄膜超低介电膜的耐损伤性
公开(公告)号：WO2012064491A2
公开(公告)日：2012-05-18
申请号：PCT/US2011/057343
申请日：2011-10-21
申请人： APPLIED MATERIALS, INC. , CHHABRA, Mahendra , YIM, Kang Sub , DEMOS, Alexandros, T.
发明人： CHHABRA, Mahendra , YIM, Kang Sub , DEMOS, Alexandros, T.
IPC分类号： H01L21/31 , H01L21/312
CPC分类号： C23C16/401 , C23C8/10 , C23C16/45523 , C23C16/56
摘要： An improved method for depositing an ultra low dielectric constant film stack is provided. Embodiments of the invention minimize k (dielectric constant) impact from initial stages of depositing the ultra low dielectric constant film stack by reducing a thickness of an oxide adhesion layer in the ultra low dielectric film stack, thereby lowering the thickness non-uniformity of the film stack to less than 2%. The improved process deposits the oxide adhesion layer and the bulk layer in the ultra low dielectric film stack at lower deposition rate and lower plasma density in combination with higher total flow rate, resulting in better packing/ordering of the co-deposited species during film deposition which causes higher mechanical strength and lower porosity.
摘要翻译：提供了一种用于沉积超低介电常数膜堆叠的改进方法。本发明的实施例通过减小超低介电膜堆叠中的氧化物粘附层的厚度来最小化沉积超低介电常数膜堆叠的初始阶段的k（介电常数）冲击，从而降低膜的厚度不均匀性堆积小于2％。改进的方法在较低的沉积速率和较低的等离子体密度下结合较高的总流速沉积了超低介电膜堆叠中的氧化物粘附层和本体层，从而在膜沉积期间共同沉积物质的更好的填充/排序这导致较高的机械强度和较低的孔隙率。

8. 发明申请

WO2011106218A3 ULTRA LOW DIELECTRIC MATERIALS USING HYBRID PRECURSORS CONTAINING SILICON WITH ORGANIC FUNCTIONAL GROUPS BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：采用等离子体增强化学气相沉积法制备含硅有机官能团的杂化前驱体的超低介电材料
公开(公告)号：WO2011106218A3
公开(公告)日：2011-09-01
申请号：PCT/US2011/025093
申请日：2011-02-16
申请人： APPLIED MATERIALS, INC. , YIM, Kang Sub , DEMOS, Alexandros, T.
发明人： YIM, Kang Sub , DEMOS, Alexandros, T.
IPC分类号： C23C16/18 , C23C16/30 , C23C16/50 , H01L21/205
摘要： Methods for depositing a low dielectric constant layer on a substrate are provided. In one embodiment, the method includes introducing one or more organosilicon compounds into a chamber, wherein the one or more organosilicon compounds comprise a silicon atom and a porogen component bonded to the silicon atom, reacting the one or more organosilicon compounds in the presence of RF power to deposit a low dielectric constant layer on a substrate in the chamber, and post-treating the low dielectric constant layer to substantially remove the porogen component from the low dielectric constant layer. Optionally, an inert carrier gas, an oxidizing gas, or both may be introduced into the processing chamber with the one or more organosilicon compounds. The post-treatment process may be an ultraviolet radiation cure of the deposited material. The UV cure process may be used concurrently or serially with a thermal or e-beam curing process. The low dielectric constant layers have good mechanical properties and a desirable dielectric constant.
摘要翻译：提供了用于在衬底上沉积低介电常数层的方法。在一个实施方案中，所述方法包括将一种或多种有机硅化合物引入室中，其中所述一种或多种有机硅化合物包含硅原子和与硅原子键合的致孔剂组分，使所述一种或多种有机硅化合物在RF 在腔室中的衬底上沉积低介电常数层的功率，以及后处理低介电常数层以基本上从低介电常数层去除成孔剂组分。任选地，惰性载气，氧化气体或两者可以与一种或多种有机硅化合物一起引入到处理室中。后处理过程可以是沉积材料的紫外线辐射固化。 UV固化工艺可以与热或电子束固化工艺同时使用或串行使用。低介电常数层具有良好的机械性能和理想的介电常数。

9. 发明申请

WO2010008930A3 METHODS TO PROMOTE ADHESION BETWEEN BARRIER LAYER AND POROUS LOW-K FILM DEPOSITED FROM MULTIPLE LIQUID PRECURSORS 审中-公开
公开(公告)号：WO2010008930A3
公开(公告)日：2010-01-21
申请号：PCT/US2009/049216
申请日：2009-06-30
申请人： APPLIED MATERIALS, INC. , CHAN, Kelvin , YIM, Kang, Sub , DEMOS, Alexandros, T.
发明人： CHAN, Kelvin , YIM, Kang, Sub , DEMOS, Alexandros, T.
IPC分类号： H01L21/208 , H01L21/31
摘要： A method for processing a substrate is provided, wherein a first organosilicon precursor, a second organosilicon precursor, a porogen, and an oxygen source are provided to a processing chamber. The first organosilicon precursor comprises compounds having generally low carbon content. The second organosilicon precursor comprises compounds having higher carbon content. The porogen comprises hydrocarbon compounds. RF power is applied to deposit a film on the substrate, and the flow rates of the various reactant streams are adjusted to change the carbon content as portions of the film are deposited. In one embodiment, an initial portion of the deposited film has a low carbon content, and is therefore oxide-like, while successive portions have higher carbon content, becoming oxycarbide-like. Another embodiment features no oxide-like initial portion. Post-treating the film generates pores in portions of the film having higher carbon content.

10. 发明申请

WO2014011364A1 METHOD TO REDUCE DIELECTRIC CONSTANT OF A POROUS LOW-K FILM 审中-公开
标题翻译：降低多孔低K膜的介电常数的方法
公开(公告)号：WO2014011364A1
公开(公告)日：2014-01-16
申请号：PCT/US2013/046285
申请日：2013-06-18
申请人： APPLIED MATERIALS, INC. , CHAN, Kelvin , XU, Jin , YIM, Kang Sub , DEMOS, Alexandros T.
发明人： CHAN, Kelvin , XU, Jin , YIM, Kang Sub , DEMOS, Alexandros T.
IPC分类号： H01L21/31
CPC分类号： H01L21/3065 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/3105 , H01L21/67115 , H01L21/6719 , H01L21/76814 , H01L21/7682 , H01L21/76825 , H01L21/76826 , H01L2221/1047
摘要： Embodiments of the present invention generally relate to methods for lowering the dielectric constant of low-k dielectric films used in semiconductor fabrication. In one embodiment, a method for lowering the dielectric constant (k) of a low-k silicon-containing dielectric film, comprising exposing a porous low-k silicon-containing dielectric film to a hydrofluoric acid solution and subsequently exposing the low-k silicon-containing dielectric film to a silylation agent. The silylation agent reacts with Si-OH functional groups in the porous low-k dielectric film to increase the concentration of carbon in the low-k dielectric film.
摘要翻译：本发明的实施例一般涉及用于降低半导体制造中使用的低k电介质膜的介电常数的方法。在一个实施例中，一种用于降低低k含硅电介质膜的介电常数（k）的方法，包括将多孔低k含硅电介质膜暴露于氢氟酸溶液，随后将低k硅包含电介质膜到甲硅烷基化剂。甲硅烷基化剂与多孔低k电介质膜中的Si-OH官能团反应以增加低k电介质膜中的碳浓度。

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