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1. 发明授权

US6150707A Metal-to-metal capacitor having thin insulator 有权
标题翻译：具有薄绝缘体的金属对金属电容器
公开(公告)号：US6150707A
公开(公告)日：2000-11-21
申请号：US226243
申请日：1999-01-07
申请人： Robert K. Cook , Craig R. Gruszecki , Mark A. Passaro , Frederick A. Scholl
发明人： Robert K. Cook , Craig R. Gruszecki , Mark A. Passaro , Frederick A. Scholl
IPC分类号： H01L21/02 , H01L21/768 , H07L29/41
CPC分类号： H01L28/40 , H01L21/76838
摘要： The present invention provides a method for fabricating a capacitor within a semiconductor device comprising the steps of forming openings in an oxide dielectric to reach a lower conductor layer which will serve as a lower conductor plate of the capacitor; depositing capacitor electrode material, such as tungsten to fill the openings to form a capacitor electrode and planarizing the filled openings using chemical/mechanical polish; depositing a selected oxide capacitor dielectric over the capacitor electrodes and patterning the capacitor dielectric with photoresist to leave dielectric covering the area of the capacitor electrodes; stripping away the photoresist; adding an upper conductor layer on top of the capacitor dielectric to serve as the top plate of the capacitor. The above steps may be repeated to form multiple layers of capacitors within the semiconductor device.
摘要翻译：本发明提供了一种在半导体器件内制造电容器的方法，包括以下步骤：在氧化物电介质中形成开口以到达将用作电容器的下导体板的下导体层; 沉积诸如钨的电容器电极材料以填充开口以形成电容器电极，并使用化学/机械抛光对填充的开口进行平坦化; 在电容器电极上沉积选定的氧化物电容器电介质，并用光致抗蚀剂构图电容器电介质以留下覆盖电容器电极区域的电介质; 剥离光致抗蚀剂; 在电容器电介质的顶部添加上导体层以用作电容器的顶板。可以重复上述步骤以在半导体器件内形成多层电容器。

2. 发明授权

US6069051A Method of producing planar metal-to-metal capacitor for use in integrated circuits 失效
标题翻译：用于集成电路的平面金属 - 金属电容器的制造方法
公开(公告)号：US6069051A
公开(公告)日：2000-05-30
申请号：US668017
申请日：1996-06-17
申请人： Du B. Nguyen , Hazara S. Rathore , George S. Prokop , Richard A. Wachnik , Craig R. Gruszecki
发明人： Du B. Nguyen , Hazara S. Rathore , George S. Prokop , Richard A. Wachnik , Craig R. Gruszecki
IPC分类号： H01L21/02 , H01L21/768 , H01L21/20
CPC分类号： H01L28/40 , H01L21/76838 , H01L28/60 , Y10S438/945
摘要： A method of fabricating on chip metal-to-metal capacitors (MMCAP) uses planar processing with a flexible choice of dielectric, thickness and capacitor shape. The method provides a simpler process which has a better yield and more reliable structure by creating a metal-to-metal capacitor on a planar surface, not in deep trenches. In addition to the process simplicity, the method also allows the use of any dielectric materials which are needed by the product designer; e.g., higher or lower dielectric constant and also not limited by high etch rate difference. Because the inventive process is a planar process, there are no corners in the bottom of deep trenches to cause yield and reliability problems. The capacitor area can be adjusted to any shape because there are no edge effects.
摘要翻译：制造片上金属 - 金属电容器（MMCAP）的方法使用平面处理，具有电介质，厚度和电容器形状的灵活选择。该方法提供了一种更简单的方法，其在平坦表面上而不是在深沟槽中形成金属 - 金属电容器，具有更好的产量和更可靠的结构。除了工艺简单之外，该方法还允许使用产品设计者需要的任何介电材料; 例如更高或更低的介电常数，也不受高蚀刻速率差的限制。因为本发明的工艺是平面工艺，所以在深沟槽的底部没有角落以产生屈服和可靠性问题。电容器面积可以调整到任何形状，因为没有边缘效应。

3. 发明授权

US6001702A Metal to metal capacitor and method for producing same 失效
标题翻译：金属与金属电容器及其制造方法
公开(公告)号：US6001702A
公开(公告)日：1999-12-14
申请号：US14934
申请日：1998-01-28
申请人： Robert K. Cook , Craig R. Gruszecki , Mark A. Passaro , Frederick A. Scholl
发明人： Robert K. Cook , Craig R. Gruszecki , Mark A. Passaro , Frederick A. Scholl
IPC分类号： H01L21/02 , H01L21/20
CPC分类号： H01L28/40
摘要： The present invention provides a method for fabricating a capacitor within a semiconductor device comprising the steps of forming openings in an oxide dielectric to reach a lower conductor layer which will serve as a lower conductor plate of the capacitor; depositing capacitor electrode material, such as tungsten to fill the openings to form a capacitor electrode and planarizing the filled openings using chemical/mechanical polish; depositing a selected oxide capacitor dielectric over the capacitor electrodes and patterning the capacitor dielectric with photoresist to leave dielectric covering the area of the capacitor electrodes; stripping away the photoresist; adding an upper conductor layer on top of the capacitor dielectric to serve as the top plate of the capacitor. The above steps may be repeated to form multiple layers of capacitors within the semiconductor device.
摘要翻译：本发明提供了一种在半导体器件内制造电容器的方法，包括以下步骤：在氧化物电介质中形成开口以到达将用作电容器的下导体板的下导体层; 沉积诸如钨的电容器电极材料以填充开口以形成电容器电极，并使用化学/机械抛光对填充的开口进行平坦化; 在电容器电极上沉积选定的氧化物电容器电介质，并用光致抗蚀剂构图电容器电介质以留下覆盖电容器电极区域的电介质; 剥离光致抗蚀剂; 在电容器电介质的顶部添加上导体层以用作电容器的顶板。可以重复上述步骤以在半导体器件内形成多层电容器。

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