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    • 2. 发明授权
    • Strap lock with both functions of combination code setting and key operation
    • 带锁具有组合代码设置和按键操作的功能
    • US07424813B2
    • 2008-09-16
    • US11546443
    • 2006-10-12
    • Chien Hung Wu
    • Chien Hung Wu
    • E05B69/00
    • E05B37/0034E05B65/50E05B67/003Y10T70/409Y10T70/415Y10T70/5009
    • The present invention is in related to a strap lock with both functions of combination code setting and key operation and comprises a lock body being unlocked or locked and a buckle being hasped or separated from the lock body when the lock body being unlocked, the buckle and the lock body are connected each other via a binder so as to that a baggage being bound and buckled; the lock body has a combination locking mechanism and a key device simultaneously, thus the officer for security checking can use a special key to unlock the lock body via the key device, and the lock body can be unlocked without damaging. Besides, the lock body further has an indicator, which can be shifted to a different position after the lock body is unlocked by the key. Thus, the owner of the baggage know whether the baggage being opened or not by means of the displaying position of the indicator.
    • 本发明涉及具有组合代码设定和键操作的功能的带锁,并且包括锁定体被解锁或锁定,并且当锁体被解锁时带扣被锁定或与锁体分离,带扣和 锁体经由粘合剂彼此连接,使得行李被绑定和弯曲; 锁体同时具有组合锁定机构和关键装置,因此用于安全检查的人员可以使用特殊钥匙通过钥匙装置解锁锁体,并且锁体可以被解锁而不损坏。 此外,锁体还具有指示器,其可以在锁体被钥匙解锁之后移动到不同的位置。 因此,行李主人通过指示灯的显示位置知道行李是否被打开。
    • 3. 发明申请
    • Data management for a flash storage device
    • Flash存储设备的数据管理
    • US20070226452A1
    • 2007-09-27
    • US11527040
    • 2006-09-26
    • Chien-Hung WuJen-Chieh LouChien-Hua ChuJui-Chien Chen
    • Chien-Hung WuJen-Chieh LouChien-Hua ChuJui-Chien Chen
    • G06F12/10
    • G06F12/0246G06F2212/7203
    • A flash storage device for transferring data to and from a host. The flash storage uses a controller to data transfer in the flash storage device, a buffer to temporarily store data for transfer between the host and the flash storage device, a first table for maintaining storage information relating to the flash storage; and a second table for maintaining information relating to the association of virtual sectors to the logical sectors, wherein the controller transfers data between the host and the flash storage and updates the first table and the second table to reflect the transfer of the data. The first table and the second table contain include addressing and status information for a more efficient and improved data transfer.
    • 用于向主机传输数据的闪存存储设备。 闪存存储器使用控制器在闪速存储设备中进行数据传输,该缓冲器临时存储用于在主机和闪存存储设备之间传送的数据,用于维护与闪存存储有关的存储信息的第一表; 以及第二表,用于维护关于虚拟扇区与逻辑扇区的关联的信息,其中控制器在主机和闪存存储器之间传送数据,并更新第一表和第二表以反映数据的传送。 第一个表和第二个表包含地址和状态信息,用于更有效和改进的数据传输。
    • 4. 发明申请
    • System and method for detecting and reducing data corruption in a storage device
    • 用于检测和减少存储设备中的数据损坏的系统和方法
    • US20060181948A1
    • 2006-08-17
    • US11352654
    • 2006-02-13
    • Hooshmand TorabiChien-Hung Wu
    • Hooshmand TorabiChien-Hung Wu
    • G11C5/14
    • G11C16/3418G11C16/102G11C16/3422
    • A data storage system using flash storage maintains a status indicator corresponding to data written into the flash storage. The status indictor of the data indicates whether a disruption, such as a power disruption or a device disconnection, occurred when the data was being written into the flash storage. The data storage system determines whether the data may be corrupted based on one or more of the status indictors. The data storage system may make this determination at a selected time or after a power-up of the data storage system. If the data is determined to possibly be corrupted, the data storage system may optionally discard the corrupted data from the flash storage or flag the corrupted data for future removal.
    • 使用闪存存储的数据存储系统保持与写入闪存存储器的数据相对应的状态指示符。 数据的状态指示器指示当数据被写入闪存存储器时是否发生中断,例如电源中断或设备断开连接。 数据存储系统基于一个或多个状态指示来确定数据是否可能被破坏。 数据存储系统可以在选定的时间或在数据存储系统上电之后进行该确定。 如果数据被确定为可能被破坏,则数据存储系统可以可选地从闪存存储器中丢弃已损坏的数据,或者标记被破坏的数据以供将来去除。
    • 5. 发明申请
    • System and method for accessing data in a memory device
    • 用于访问存储设备中的数据的系统和方法
    • US20060143426A1
    • 2006-06-29
    • US11358673
    • 2006-02-21
    • Chien-Hung Wu
    • Chien-Hung Wu
    • G06F12/10
    • G06F3/0616G06F3/064G06F3/0679G06F12/0246
    • A memory and storage device includes a data management system for transferring data units referenced by logical addresses. The data management system maps the logical addresses to sequential virtual addresses according to the order the data units are received. The data management system also maps the sequential virtual addresses to sequential physical addresses in a memory block of a memory device. Additionally, the data management system can modify a data unit in the memory block by copying any other valid data units in the memory block to another memory block and writing the modified data unit into this other memory block. The data management system writes the valid data units and the modified data unit into sequential physical addresses of this other memory block.
    • 存储器和存储设备包括用于传送由逻辑地址引用的数据单元的数据管理系统。 数据管理系统根据接收数据单元的顺序将逻辑地址映射到顺序虚拟地址。 数据管理系统还将顺序虚拟地址映射到存储器件的存储器块中的顺序物理地址。 此外,数据管理系统可以通过将存储器块中的任何其他有效数据单元复制到另一个存储块并将修改的数据单元写入该另一个存储器块来修改存储器块中的数据单元。 数据管理系统将有效的数据单元和修改的数据单元写入该另一个存储块的顺序物理地址。
    • 9. 发明授权
    • Doping of SiC structures and methods associated with same
    • 掺杂SiC结构和与之相关的方法
    • US07488984B2
    • 2009-02-10
    • US11407853
    • 2006-04-19
    • Jeffrey M. MelzakChien-Hung Wu
    • Jeffrey M. MelzakChien-Hung Wu
    • H01L29/15
    • B81C1/00666H01L21/3148H01L29/1608H01L29/84Y10S438/931
    • Doped silicon carbide structures, as well as methods associated with the same, are provided. The structures, for example, are components (e.g., layer, patterned structure) in MEMS structures. The doped silicon carbide structures may be highly conductive, thus, providing low resistance to electrical current. An in-situ doping process may be used to form the structures. The process parameters can be selected so that the structures have a low residual stress and/or low strain gradient. Thus, the structures may be formed having desired dimensions with little (or no) distortion arising from residual stress and/or strain gradient. The high conductivity and mechanical integrity of the structures are significant advantages in MEMS devices such as sensors and actuators.
    • 提供了掺杂的碳化硅结构,以及与其相关的方法。 该结构例如是MEMS结构中的部件(例如,层,图案化结构)。 掺杂的碳化硅结构可以是高导电性的,因此提供低电阻的电流。 可以使用原位掺杂工艺来形成结构。 可以选择工艺参数,使得结构具有低残余应力和/或低应变梯度。 因此,可以形成具有由残余应力和/或应变梯度引起的很少(或不)变形的期望尺寸的结构。 结构的高导电性和机械完整性在诸如传感器和致动器的MEMS装置中是显着的优点。