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1. 发明申请

US20110068425A1 Optical device having light sensor employing horizontal electrical field 有权
标题翻译：具有采用水平电场的光传感器的光学装置
公开(公告)号：US20110068425A1
公开(公告)日：2011-03-24
申请号：US12584476
申请日：2009-09-04
申请人： Shirong Liao , Dawei Zheng , Cheng-Chih Kung , Mehdi Asghari
发明人： Shirong Liao , Dawei Zheng , Cheng-Chih Kung , Mehdi Asghari
IPC分类号： H01L31/0232
CPC分类号： H01L31/1808 , G02B6/12004 , G02B6/1228 , H01L31/035281 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： The device includes an optical waveguide on a base. The waveguide is configured to guide a light signal through a light-transmitting medium. A light sensor is also positioned on the base. The light sensor including a ridge extending from slab regions. The slab regions are positioned on opposing sides of the ridge. A light-absorbing medium is positioned to receive at least a portion of the light signal from the light-transmitting medium included in the waveguide. The light-absorbing medium is included in the ridge and also in the slab regions. The light-absorbing medium includes doped regions positioned such that an application of a reverse bias across the doped regions forms an electrical field in the light-absorbing medium included in the ridge.
摘要翻译：该装置包括在基座上的光波导。波导被配置为引导光信号通过透光介质。光传感器也位于基座上。光传感器包括从板坯区域延伸的脊。平板区域位于脊的相对侧上。光吸收介质被定位成接收来自包括在波导中的光透射介质的光信号的至少一部分。光吸收介质包括在脊中并且还包括在板区域中。光吸收介质包括掺杂区域，其定位成使得跨越掺杂区域的反向偏置的施加在包括在脊中的光吸收介质中形成电场。

2. 发明授权

US06885795B1 Waveguide tap monitor 有权
标题翻译：波导龙头监视器
公开(公告)号：US06885795B1
公开(公告)日：2005-04-26
申请号：US10161208
申请日：2002-05-31
申请人： Shih-Hsiang Hsu , Dazeng Feng , Cheng-Chih Kung , Xiaoming Yin , Trenton Gary Coroy
发明人： Shih-Hsiang Hsu , Dazeng Feng , Cheng-Chih Kung , Xiaoming Yin , Trenton Gary Coroy
IPC分类号： G02B6/12 , G02B6/122 , G02B6/125 , G02B6/26
CPC分类号： G02B6/125 , G02B6/12004 , G02B6/122 , G02B2006/12097
摘要： An optical component is disclosed. The optical component includes a tap waveguide and a primary waveguide positioned on a base. The tap waveguide is configured to receive a portion of a light signal traveling along the primary waveguide. The portion of the light signal received by the tap waveguide is the tapped portion of the light signal. A direction changing region is configured to receive the tapped portion of the light signal from the tap waveguide and to direct the tapped portion of the light signal travels away from the base. A light sensor is configured to receive the tapped portion of the light signal from the direction changing region.
摘要翻译：公开了一种光学部件。光学部件包括位于基座上的抽头波导和主波导。抽头波导被配置为接收沿着主波导行进的光信号的一部分。由抽头波导接收的光信号的部分是光信号的抽头部分。方向改变区域被配置为接收来自分接波导的光信号的抽头部分，并且引导光信号的抽头部分离开基极行进。光传感器被配置为从方向改变区域接收光信号的抽头部分。

3. 发明授权

US06417548B1 Variable work function transistor high density mask ROM 有权
标题翻译：可变功函数晶体管高密度掩膜ROM
公开(公告)号：US06417548B1
公开(公告)日：2002-07-09
申请号：US09356679
申请日：1999-07-19
申请人： Shing-Ren Sheu , Cheng-Chih Kung
发明人： Shing-Ren Sheu , Cheng-Chih Kung
IPC分类号： H01L2976
CPC分类号： H01L27/11233 , H01L27/1052 , H01L27/112
摘要： A mask ROM stores information by selecting the work function of the gates of each FET in an array of FETs. The polysilicon gates of some of the FETs are doped N-type and the gates of the other FETs are doped P-type to form gates having different work functions, thereby forming FETs having different threshold voltages. The ROM consists of a parallel array of buried N+ bit lines formed in the substrate, a gate oxide layer deposited over the bit lines and a layer of polysilicon deposited on the gate oxide. The polysilicon is blanket doped P-type and then an encoding mask is formed, with openings in the encoding mask exposing regions of the polysilicon to be formed into gates of FETs with low threshold voltages. Either arsenic or phosphorus is doped into the polysilicon through the mask openings. The mask is removed, a layer of conductive material such as tungsten silicide is deposited and the polysilicon and the conductive material are formed into word lines for the ROM. The word lines of the ROM serve as gates for the FETs and the bit lines serve as sources and drains for the FETs.
摘要翻译：掩模ROM通过选择FET阵列中每个FET的栅极的功函数来存储信息。一些FET的多晶硅栅极被掺杂为N型，并且其它FET的栅极被掺杂P型以形成具有不同功函数的栅极，从而形成具有不同阈值电压的FET。该ROM由在衬底中形成的掩埋N +位线的平行阵列，沉积在位线上的栅极氧化物层和沉积在栅极氧化物上的多晶硅层组成。多晶硅是覆盖掺杂P型，然后形成编码掩模，其中编码掩模中的开口暴露多晶硅的区域，以形成具有低阈值电压的FET的栅极。砷或磷通过掩模开口掺杂到多晶硅中。去除掩模，沉积诸如硅化钨的导电材料层，并且将多晶硅和导电材料形成为ROM的字线。 ROM的字线用作FET的栅极，位线用作FET的源极和漏极。

4. 发明授权

US6054353A Short turn around time mask ROM process 失效
标题翻译：短周转时间掩码ROM进程
公开(公告)号：US6054353A
公开(公告)日：2000-04-25
申请号：US746855
申请日：1996-11-18
申请人： Shing-Ren Sheu , Cheng-Chih Kung
发明人： Shing-Ren Sheu , Cheng-Chih Kung
IPC分类号： H01L21/8246 , H01L21/8234
CPC分类号： H01L27/11293 , H01L27/1126
摘要： A mask ROM stores information by selecting the work function of the gates of each FET in an array of FETs at a late stage in the manufacture of the ROM. The polysilicon gates of some of the FETs are doped N-type and the gates of the other FETs are doped P-type to form gates having different work functions, thereby forming FETs having different threshold voltages. The ROM consists of a parallel array of buried N.sup.+ bit lines formed in the substrate, a gate oxide layer deposited over the bit lines and a layer of polysilicon deposited on the gate oxide. The polysilicon is blanket doped N-type, gate electrodes are defined by photolithography, and then self-aligned silicide layers are formed on the gate electrodes. An insulating layer is then formed over the gate electrodes. Programming of the ROM is accomplished by forming a mask on the insulating layer and then implanting ions through openings in the mask, through the insulating layer and the silicide layer, and into the polysilicon layer. The implantation converts individual gate electrodes from N-type to P-type to alter the threshold voltage of the selected transistors. Relatively few additional processing steps are needed after the programming to complete the ROM.
摘要翻译：掩模ROM通过在ROM的制造中的晚期阶段选择FET的阵列中的每个FET的栅极的功函数来存储信息。一些FET的多晶硅栅极被掺杂为N型，并且其它FET的栅极被掺杂P型以形成具有不同功函数的栅极，从而形成具有不同阈值电压的FET。该ROM由在衬底中形成的掩埋N +位线的平行阵列，沉积在位线上的栅极氧化物层和沉积在栅极氧化物上的多晶硅层组成。多晶硅是覆盖N掺杂的，栅极通过光刻法定义，然后在栅电极上形成自对准的硅化物层。然后在栅电极上形成绝缘层。 ROM的编程通过在绝缘层上形成掩模然后通过掩模中的开口通过绝缘层和硅化物层注入离子并进入多晶硅层来实现。注入将单个栅电极从N型转换为P型，以改变所选晶体管的阈值电压。在编程完成ROM之后，需要较少的附加处理步骤。

5. 发明授权

US08542954B2 Optical component having reduced dependency on etch depth 有权
公开(公告)号：US08542954B2
公开(公告)日：2013-09-24
申请号：US13385099
申请日：2012-02-01
申请人： Cheng-Chih Kung , Shirong Liao
发明人： Cheng-Chih Kung , Shirong Liao
IPC分类号： G02F1/035
CPC分类号： G02B6/134 , B82Y20/00 , G02B6/1223 , G02B2006/12061 , G02B2006/12142 , G02B2006/12176 , H01L31/105
摘要： An optical device includes an active component on a base. The active component is a light sensor and/or a light modulator. The active component is configured to guide a light signal through a ridge of an active medium extending upwards from slab regions of the active medium. The slab regions are on opposing sides of the ridge. The active medium includes a doped region that extends into a lateral side of the ridge and also into one of the slab regions. The depth that the doped region extends into the slab region is further than the depth that the doped region extends into the ridge.

6. 发明申请

US20130195397A1 Optical component having reduced dependency on etch depth 有权
公开(公告)号：US20130195397A1
公开(公告)日：2013-08-01
申请号：US13385099
申请日：2012-02-01
申请人： Cheng-Chih Kung , Shirong Liao
发明人： Cheng-Chih Kung , Shirong Liao
IPC分类号： G02B6/134 , H01L31/02
CPC分类号： G02B6/134 , B82Y20/00 , G02B6/1223 , G02B2006/12061 , G02B2006/12142 , G02B2006/12176 , H01L31/105
摘要： An optical device includes an active component on a base. The active component is a light sensor and/or a light modulator. The active component is configured to guide a light signal through a ridge of an active medium extending upwards from slab regions of the active medium. The slab regions are on opposing sides of the ridge. The active medium includes a doped region that extends into a lateral side of the ridge and also into one of the slab regions. The depth that the doped region extends into the slab region is further than the depth that the doped region extends into the ridge.

7. 发明授权

US08093080B2 Optical device having light sensor employing horizontal electrical field 有权
标题翻译：具有采用水平电场的光传感器的光学装置
公开(公告)号：US08093080B2
公开(公告)日：2012-01-10
申请号：US12584476
申请日：2009-09-04
申请人： Shirong Liao , Dawei Zheng , Cheng-Chih Kung , Mehdi Asghari
发明人： Shirong Liao , Dawei Zheng , Cheng-Chih Kung , Mehdi Asghari
IPC分类号： H01L21/02
CPC分类号： H01L31/1808 , G02B6/12004 , G02B6/1228 , H01L31/035281 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： The device includes an optical waveguide on a base. The waveguide is configured to guide a light signal through a light-transmitting medium. A light sensor is also positioned on the base. The light sensor including a ridge extending from slab regions. The slab regions are positioned on opposing sides of the ridge. A light-absorbing medium is positioned to receive at least a portion of the light signal from the light-transmitting medium included in the waveguide. The light-absorbing medium is included in the ridge and also in the slab regions. The light-absorbing medium includes doped regions positioned such that an application of a reverse bias across the doped regions forms an electrical field in the light-absorbing medium included in the ridge.
摘要翻译：该装置包括在基座上的光波导。波导被配置为引导光信号通过透光介质。光传感器也位于基座上。光传感器包括从板坯区域延伸的脊。平板区域位于脊的相对侧上。光吸收介质被定位成接收来自包括在波导中的光透射介质的光信号的至少一部分。光吸收介质包括在脊中并且还包括在板区域中。光吸收介质包括掺杂区域，其定位成使得跨越掺杂区域的反向偏置的施加在包括在脊中的光吸收介质中形成电场。

8. 发明授权

US06194266B1 Method for forming a capacitor having selective hemispherical grained polysilicon 有权
标题翻译：用于形成具有选择性半球形多晶硅的电容器的方法
公开(公告)号：US06194266B1
公开(公告)日：2001-02-27
申请号：US09511656
申请日：2000-02-22
申请人： Terry Chung-Yi Chen , Cheng-Chih Kung , Da-Wen Hsia , Cheng-Chieh Huang
发明人： Terry Chung-Yi Chen , Cheng-Chih Kung , Da-Wen Hsia , Cheng-Chieh Huang
IPC分类号： H01L218242
CPC分类号： H01L28/84 , H01L27/10852 , Y10S438/964
摘要： A method for forming a capacitor containing selective hemispherical grained (S-HSG) polysilicon is disclosed. In this invention, dopant implantation is incorporated after the S-HSG growth to replace conventional wet clean procedure. The elimination of the cleaning treatments avoids the incidents of residue particles (due to cleaning) and minimizes numerous structure defects. The incorporation of the ion implantation technique would make up the insufficiency of doping requirement by applying in-diffusion alone. The combination of the in-diffusion and the implantation for doping procedure could maintain the device with good capacitance level even though the pre-clean procedure is excluded.
摘要翻译：公开了一种形成包含选择性半球晶粒（S-HSG）多晶硅的电容器的方法。在本发明中，在S-HSG生长之后掺入掺杂剂注入以代替常规的湿式清洁程序。消除清洁处理可以避免残留颗粒的发生（由于清洁），并最大限度地减少许多结构缺陷。离子注入技术的并入将通过单独使用扩散扩散来弥补掺杂需求的不足。扩散和掺杂过程的注入的组合可以保持器件具有良好的电容水平，即使排除了预清洁程序。

9. 发明授权

US5830772A Method for fabricating isolating regions for buried conductors 失效
标题翻译：掩埋导体绝缘区域的制造方法
公开(公告)号：US5830772A
公开(公告)日：1998-11-03
申请号：US526073
申请日：1995-09-08
申请人： Che-Pin Tseng , Nai-Jen Yeh , Yu-Chih Chuang , Cheng-Chih Kung
发明人： Che-Pin Tseng , Nai-Jen Yeh , Yu-Chih Chuang , Cheng-Chih Kung
IPC分类号： H01L21/761 , H01L21/8246 , H01L21/44 , H01L21/76
CPC分类号： H01L27/11293 , H01L21/761
摘要： Although the spacers are formed on the sidewalls of gate electrode and words lines via the same steps of deposition and etch-back processes, only the spacers disposed at the sidewalls of the gate electrode are practical for fabricating peripheral devices with LDD structure, and such fabrication is impractical in the memory cell region. On the contrary, the region beneath the spacers disposed at the sidewalls of word lines will become the path through which leakage current flows. The present invention makes use a shielding layer to cover the second active region as a masking, and then removes the spacers disposed at the sidewalls of word lines. Afterwards, isolating regions are formed through one implantation procedure to thereby decrease leakage current and simplify the process flow.
摘要翻译：虽然通过沉积和回蚀工艺的相同步骤在栅极和字线的侧壁上形成间隔物，但是仅设置在栅电极的侧壁处的间隔物实际上用于制造具有LDD结构的外围器件，并且这种制造在记忆细胞区域是不切实际的。相反，位于字线侧壁的间隔物下方的区域将成为漏电流流过的路径。本发明利用屏蔽层覆盖作为掩蔽的第二有源区，然后去除设置在字线侧壁的间隔物。之后，通过一个注入程序形成隔离区域，从而减少漏电流并简化工艺流程。

10. 发明授权

US08842946B1 Light sensor having reduced dark current 有权
标题翻译：具有降低的暗电流的光传感器
公开(公告)号：US08842946B1
公开(公告)日：2014-09-23
申请号：US13506071
申请日：2012-03-26
申请人： Shirong Liao , Cheng-Chih Kung , Dazeng Feng , Ning-Ning Feng , Yong Liu , Roshanak Shafiiha
发明人： Shirong Liao , Cheng-Chih Kung , Dazeng Feng , Ning-Ning Feng , Yong Liu , Roshanak Shafiiha
IPC分类号： G02B6/12
CPC分类号： G02B6/136 , G02B2006/12097 , G02F2201/063
摘要： The light sensor is included on an optical device having a waveguide on a base. The waveguide is configured to guide a light signal through a crystalline light-transmitting medium. The light sensor is also positioned on the base and is configured to receive the light signal from the waveguide. The light sensor includes a planar interface between two different materials. The interface is at a 45° angle relative to a direction of the light-transmitting medium.
摘要翻译：光传感器包括在具有在基底上的波导的光学装置上。波导被配置为引导光信号通过晶体透光介质。光传感器也位于基座上并被配置为从波导接收光信号。光传感器包括两种不同材料之间的平面界面。界面相对于透光介质的<110>方向成45°角。

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