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1. 发明申请

US20190019903A1 SILICON WAVEGUIDE INTEGRATED WITH SILICON-GERMANIUM (Si-Ge) AVALANCHE PHOTODIODE DETECTOR 审中-公开
公开(公告)号：US20190019903A1
公开(公告)日：2019-01-17
申请号：US16036824
申请日：2018-07-16
申请人： Jinlin Ye , Shirong Liao
发明人： Jinlin Ye , Shirong Liao
IPC分类号： H01L31/0232 , H01L31/107 , H01L31/0288 , H01L31/18 , H01L31/105 , G02B6/136
摘要： A method for manufacturing an integrated avalanche photodetector comprising steps of providing a silicon-insulator substrate including a top layer, an insulator layer and a base layer; partially removing the top layer to form an optical waveguide over the insulator layer; forming an opening at least through the cladding layer and the insulator layer extending to a first portion of the base layer; and forming an avalanche photodetector over the first portion of the base layer at least in the opening and optically coupled to the waveguide. In one embodiment, the avalanche photodetector is butt-coupled to the optical waveguide. In another embodiment, the avalanche photodetector is evanescently coupled to the optical waveguide.

2. 发明授权

US08897606B2 Ring resonator with wavelength selectivity 有权
标题翻译：具有波长选择性的环形谐振器
公开(公告)号：US08897606B2
公开(公告)日：2014-11-25
申请号：US12928076
申请日：2010-12-01
申请人： Mehdi Asghari , Dazeng Feng , Po Dong , Roshanak Shafiiha , Shirong Liao , Ning-Ning Feng
发明人： Mehdi Asghari , Dazeng Feng , Po Dong , Roshanak Shafiiha , Shirong Liao , Ning-Ning Feng
IPC分类号： G02F1/225 , G02B6/26
CPC分类号： G02F1/2257 , G02F2201/122 , G02F2203/15
摘要： The ring resonator includes waveguides configured to guide light signals. The waveguides include an input waveguide and one or more loop waveguides. One of the loop waveguides is a primary loop waveguide that is optically coupled with the input waveguide at a wavelength of light. A tuner is configured to tune the wavelength at which the light is optically coupled from the input waveguide into the primary loop waveguide. One or more light detectors are each configured to provide an output indicating an intensity of light guided in one of the one or more loop waveguides. Electronics are configured to tune the tuner in response to the output from the light detector.
摘要翻译：环形谐振器包括被配置为引导光信号的波导。波导包括输入波导和一个或多个环形波导。环路波导之一是在波长为光的情况下与输入波导光耦合的主要环路波导。调谐器被配置为调节光从输入波导光耦合到主环形波导中的波长。一个或多个光检测器被配置为提供指示在一个或多个环形波导之一中引导的光的强度的输出。电子设备被配置为响应于来自光检测器的输出来调谐调谐器。

3. 发明申请

US20110068425A1 Optical device having light sensor employing horizontal electrical field 有权
标题翻译：具有采用水平电场的光传感器的光学装置
公开(公告)号：US20110068425A1
公开(公告)日：2011-03-24
申请号：US12584476
申请日：2009-09-04
申请人： Shirong Liao , Dawei Zheng , Cheng-Chih Kung , Mehdi Asghari
发明人： Shirong Liao , Dawei Zheng , Cheng-Chih Kung , Mehdi Asghari
IPC分类号： H01L31/0232
CPC分类号： H01L31/1808 , G02B6/12004 , G02B6/1228 , H01L31/035281 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： The device includes an optical waveguide on a base. The waveguide is configured to guide a light signal through a light-transmitting medium. A light sensor is also positioned on the base. The light sensor including a ridge extending from slab regions. The slab regions are positioned on opposing sides of the ridge. A light-absorbing medium is positioned to receive at least a portion of the light signal from the light-transmitting medium included in the waveguide. The light-absorbing medium is included in the ridge and also in the slab regions. The light-absorbing medium includes doped regions positioned such that an application of a reverse bias across the doped regions forms an electrical field in the light-absorbing medium included in the ridge.
摘要翻译：该装置包括在基座上的光波导。波导被配置为引导光信号通过透光介质。光传感器也位于基座上。光传感器包括从板坯区域延伸的脊。平板区域位于脊的相对侧上。光吸收介质被定位成接收来自包括在波导中的光透射介质的光信号的至少一部分。光吸收介质包括在脊中并且还包括在板区域中。光吸收介质包括掺杂区域，其定位成使得跨越掺杂区域的反向偏置的施加在包括在脊中的光吸收介质中形成电场。

4. 发明授权

US08796749B2 Reverse conductive nano array and manufacturing method of the same 有权
标题翻译：反向导电纳米阵列及其制造方法相同
公开(公告)号：US08796749B2
公开(公告)日：2014-08-05
申请号：US13586435
申请日：2012-08-15
申请人： Shirong Liao , Jinlin Ye , Bo Liao , Jie Dong
发明人： Shirong Liao , Jinlin Ye , Bo Liao , Jie Dong
IPC分类号： H01L31/0236
CPC分类号： H01L31/02327 , H01L31/1075
摘要： A high-speed photodiode may include a photodiode structure having a substrate, a light-absorbing layer and a light-directing layer that is deposited on a top surface of the photodiode structure and patterned to form a textured surface used to change the angle of incident light to increase a light path of the incident light when entering the photodiode structure. In one embodiment, the light-directing layer may include a plurality of polygon such as triangular projections to refract the incident light to increase the light path thereof when entering the photodiode structure. In another embodiment, a plurality of nanoscaled sub-triangular projections can patterned on both sides of each triangular projection to more effectively increase the light paths. In a further embodiment, porous materials can be used to form the light-directing layer.
摘要翻译：高速光电二极管可以包括光电二极管结构，其具有衬底，光吸收层和导光层，其沉积在光电二极管结构的顶表面上并被图案化以形成用于改变入射角的纹理表面光进入光电二极管结构时增加入射光的光路。在一个实施例中，导光层可以包括多个多边形，例如三角形突起，以折射入射光，以在进入光电二极管结构时增加其光路。在另一个实施例中，可以在每个三角形投影的两侧上形成多个纳米级的三角形突起，以更有效地增加光路。在另一实施例中，多孔材料可用于形成光导层。

5. 发明申请

US20130195398A1 Optical component having reduced dependency on etch depth 有权
标题翻译：光学元件对蚀刻深度的依赖性降低
公开(公告)号：US20130195398A1
公开(公告)日：2013-08-01
申请号：US13385372
申请日：2012-02-15
申请人： Shirong Liao , Dazeng Feng
发明人： Shirong Liao , Dazeng Feng
IPC分类号： G02B6/134 , H01L31/02
CPC分类号： G02B6/134 , B82Y20/00 , G02B6/1223 , G02B2006/12061 , G02B2006/12142 , G02B2006/12176 , H01L31/105
摘要： An optical device includes an active component on a base. The active component is a light sensor and/or a light modulator. The active component is configured to guide a light signal through a ridge of an active medium extending upwards from slab regions of the active medium. The slab regions are on opposing sides of the ridge. The active medium includes a doped region that extends into a lateral side of the ridge and also into one of the slab regions. The depth that the doped region extends into the slab region is further than the depth that the doped region extends into the ridge.
摘要翻译：光学装置包括在基座上的有源部件。有源部件是光传感器和/或光调制器。有源部件被配置为引导光信号通过从活性介质的板区域向上延伸的活性介质的脊。平板区域在脊的相对侧上。活性介质包括延伸到脊的横向侧面并且还进入其中一个板状区域的掺杂区域。掺杂区域延伸到平板区域的深度比掺杂区域延伸到脊部的深度更远。

6. 发明申请

US20110310467A1 System having light sensor with enhanced sensitivity 有权
标题翻译：具有灵敏度增强的光传感器的系统
公开(公告)号：US20110310467A1
公开(公告)日：2011-12-22
申请号：US12803136
申请日：2010-06-18
申请人： Ning-Ning Feng , Shirong Liao , Dawei Zheng , Dazeng Feng
发明人： Ning-Ning Feng , Shirong Liao , Dawei Zheng , Dazeng Feng
IPC分类号： H04B10/12
CPC分类号： H01L31/1075
摘要： The system includes a light-transmitting medium positioned on a base. The light-transmitting medium included a ridge and a slab region. The ridge extends upward from the slab region and defines a portion of a waveguide on the base. The waveguide is configured to guide a light signal through the device. The device also includes an avalanche effect light sensor positioned on the base and configured to detect the presence of the light signal. The light sensor includes a light-absorbing medium positioned on the ridge of the light-transmitting medium such that the light signal is coupled from the light-transmitting medium into the light-absorbing medium. The light-transmitting includes a charge layer located at an interface of the light-transmitting medium and the light-absorbing medium. A multiplication region is formed in the slab regions of the light-transmitting medium such that the multiplication region receives charge carriers from the charge layer during the operation of the light sensor.
摘要翻译：该系统包括位于基座上的透光介质。透光介质包括脊和板区域。脊从板坯区域向上延伸，并且在基座上限定波导的一部分。波导被配置为引导光信号穿过该装置。该装置还包括位于基座上并被配置为检测光信号的存在的雪崩效应光传感器。光传感器包括位于透光介质的脊上的光吸收介质，使得光信号从光传输介质耦合到光吸收介质中。光透射包括位于透光介质和光吸收介质的界面处的电荷层。在光传输介质的平板区域中形成乘法区域，使得倍增区域在光传感器的操作期间从电荷层接收电荷载流子。

7. 发明申请

US20110206313A1 Reducing optical loss in an optical modulator using depletion region 有权
标题翻译：减少使用耗尽区的光调制器的光损耗
公开(公告)号：US20110206313A1
公开(公告)日：2011-08-25
申请号：US12660149
申请日：2010-02-19
申请人： Po Dong , Dazeng Feng , Shirong Liao , Mehdi Asghari
发明人： Po Dong , Dazeng Feng , Shirong Liao , Mehdi Asghari
IPC分类号： G02F1/035
CPC分类号： G02F1/025 , G02F2201/063 , G02F2201/12
摘要： An optical device includes a light-transmitting medium positioned on a base. The light-transmitting medium includes a slab region and a ridge extending upward from the slab region. The ridge defines a portion of an optical waveguide on the device. A modulator is also positioned on the base. The modulator includes a first doped region of the light-transmitting medium and a second doped region of the light-transmitting medium. The first doped region and the second doped region are configured such that a depletion region forms in the waveguide when an electrical bias is not applied to the modulator. At least a portion of the first doped region is positioned in the ridge and at least a portion of the second doped region is positioned in the slab region. The light-transmitting medium includes a first electrical pathway extending from a first location to the first doped region. The first location is on top of the light-transmitting medium and is spaced apart from the ridge.
摘要翻译：光学装置包括位于基座上的透光介质。透光介质包括板坯区域和从板坯区域向上延伸的脊部。脊部限定了设备上光波导的一部分。调制器也位于基座上。调制器包括透光介质的第一掺杂区域和透光介质的第二掺杂区域。第一掺杂区域和第二掺杂区域被配置为使得当不向调制器施加电偏压时，在波导管中形成耗尽区域。第一掺杂区域的至少一部分位于脊中，并且第二掺杂区域的至少一部分位于板区域中。透光介质包括从第一位置延伸到第一掺杂区域的第一电路径。第一位置在透光介质的顶部，并与脊部间隔开。

8. 发明申请

US20110142391A1 Ring resonator with wavelength selectivity 有权
标题翻译：具有波长选择性的环形谐振器
公开(公告)号：US20110142391A1
公开(公告)日：2011-06-16
申请号：US12928076
申请日：2010-12-01
申请人： Mehdi Asghari , Dazeng Feng , Po Dong , Roshanak Shafiiha , Shirong Liao , Ning-Ning Feng
发明人： Mehdi Asghari , Dazeng Feng , Po Dong , Roshanak Shafiiha , Shirong Liao , Ning-Ning Feng
IPC分类号： G02F1/035
CPC分类号： G02F1/2257 , G02F2201/122 , G02F2203/15
摘要： The ring resonator includes waveguides configured to guide light signals. The waveguides include an input waveguide and one or more loop waveguides. One of the loop waveguides is a primary loop waveguide that is optically coupled with the input waveguide at a wavelength of light. A tuner is configured to tune the wavelength at which the light is optically coupled from the input waveguide into the primary loop waveguide. One or more light detectors are each configured to provide an output indicating an intensity of light guided in one of the one or more loop waveguides. Electronics are configured to tune the tuner in response to the output from the light detector.
摘要翻译：环形谐振器包括被配置为引导光信号的波导。波导包括输入波导和一个或多个环形波导。环路波导之一是在波长为光的情况下与输入波导光耦合的主要环路波导。调谐器被配置为调节光从输入波导光耦合到主环形波导中的波长。一个或多个光检测器被配置为提供指示在一个或多个环形波导之一中引导的光的强度的输出。电子设备被配置为响应于来自光检测器的输出来调谐调谐器。

9. 发明授权

US06479313B1 Method of manufacturing GaN-based p-type compound semiconductors and light emitting diodes 失效
标题翻译：制造GaN基p型化合物半导体和发光二极管的方法
公开(公告)号：US06479313B1
公开(公告)日：2002-11-12
申请号：US09866442
申请日：2001-05-25
申请人： Jinlin Ye , Jyh-Chia Chen , Shirong Liao , Hong K. Choi , John C. C. Fan
发明人： Jinlin Ye , Jyh-Chia Chen , Shirong Liao , Hong K. Choi , John C. C. Fan
IPC分类号： H01L2100
CPC分类号： H01L33/325 , H01L21/2683 , H01L21/3245 , H01L33/0095
摘要： Compound semiconductor material is irradiated with x-ray radiation to activate a dopant material. Active carrier concentration efficiency may be improved over known methods, including conventional thermal annealing. The method may be employed for III-V group compounds, including GaN-based semiconductors, doped with p-type material to form low resistivity p-GaN. The method may be further employed to manufacture GaN-based LEDs, including blue LEDs, having improved forward bias voltage and light-emitting efficiency.
摘要翻译：用x射线辐射照射化合物半导体材料以活化掺杂剂材料。主动载流子浓度效率可以通过已知方法，包括常规热退火来改善。该方法可用于掺杂p型材料的III-V族化合物，包括GaN基半导体，以形成低电阻率p-GaN。该方法可以进一步用于制造具有改进的正偏压和发光效率的GaN基LED（包括蓝色LED）。

10. 发明授权

US09087951B2 Method and apparatus for diffusion into semiconductor materials 有权
标题翻译：扩散到半导体材料中的方法和装置
公开(公告)号：US09087951B2
公开(公告)日：2015-07-21
申请号：US13630440
申请日：2012-09-28
申请人： Jinlin Ye , Shirong Liao , Bo Liao , Jie Dong
发明人： Jinlin Ye , Shirong Liao , Bo Liao , Jie Dong
IPC分类号： H01L21/22 , H01L31/107 , H01L31/18 , H01L21/223
CPC分类号： H01L31/107 , H01L21/223 , H01L21/2233 , H01L31/1804 , H01L31/184 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： A method and apparatus to manage the diffusion process by controlling the diffusion path in the semiconductor fabrication process is disclosed. In one embodiment, a method for processing a substrate comprising steps of forming one or more diffusion areas on said substrate; disposing the substrate in a diffusion chamber, wherein the diffusion chamber is under a vacuum condition and a source material therein is heated and evaporated; and diffusing the source material into the diffusion area on said substrate, wherein said source material travels through a diffusion controlling unit adapted to manage the flux thereof in the diffusion chamber, so concentration of the source material is uniform in a diffusion region above the substrate.
摘要翻译：公开了一种通过控制半导体制造工艺中的扩散路径来管理扩散过程的方法和装置。在一个实施例中，一种用于处理衬底的方法，包括在所述衬底上形成一个或多个扩散区域的步骤; 将基板设置在扩散室中，其中扩散室处于真空状态，并且其中的源材料被加热并蒸发; 并且将所述源材料扩散到所述衬底上的扩散区域中，其中所述源材料行进通过扩散控制单元，所述扩散控制单元适于管理其在扩散室中的通量，因此源材料的浓度在衬底上方的扩散区域中是均匀的。

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