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1. 发明申请

US20090325469A1 SUBSTRATE SUPPORTING UNIT AND SINGLE TYPE SUBSTRATE POLISHING APPARATUS USING THE SAME 有权
标题翻译：基板支撑单元和单一基板抛光装置
公开(公告)号：US20090325469A1
公开(公告)日：2009-12-31
申请号：US12273829
申请日：2008-11-19
申请人： Gyo-Woog KOO , Chang-Ro Yoon , Jung-Gun Cho , Ki-Hoon Choi , Jung-Bong Choi , Duk-Hyun Son , Se-Hun Goo
发明人： Gyo-Woog KOO , Chang-Ro Yoon , Jung-Gun Cho , Ki-Hoon Choi , Jung-Bong Choi , Duk-Hyun Son , Se-Hun Goo
IPC分类号： B24B1/00 , B24B7/04 , B24B41/06
CPC分类号： B24B37/30 , H01L21/6838 , H01L21/68728 , H01L21/68742
摘要： Provided are a substrate supporting unit and a single type substrate polishing apparatus using the substrate supporting unit. During a polishing process, the bottom surface of a substrate is attached to the substrate supporting unit by vacuum suction, and during a post-cleaning process, the substrate is supported by the substrate supporting unit at a position spaced apart from the substrate supporting unit for cleaning the bottom surface of the substrate. Therefore, according to the substrate supporting unit and the substrate polishing apparatus using the substrate supporting unit, in a state where the substrate is supported by the single type substrate supporting unit, a process for polishing the top surface of the substrate and a post-process for cleaning the top and bottom surfaces of the substrate can be sequentially performed.
摘要翻译：提供了一种基板支撑单元和使用该基板支撑单元的单一基板抛光装置。在抛光过程中，通过真空抽吸将衬底的底表面附接到衬底支撑单元，并且在后清洗过程中，衬底由衬底支撑单元支撑在与衬底支撑单元间隔开的位置，用于清洁基底的底面。因此，根据基板支撑单元和使用基板支撑单元的基板研磨装置，在基板由单一基板支撑单元支撑的状态下，对基板的顶面进行研磨的工序和后处理可以依次执行用于清洁基板的顶表面和底表面的清洁。

2. 发明授权

US06784106B2 Wafer drying method 有权
标题翻译：晶圆烘干法
公开(公告)号：US06784106B2
公开(公告)日：2004-08-31
申请号：US10183788
申请日：2002-06-26
申请人： Jeong-Yong Bae , Chang-Ro Yoon , Pyeng-Jae Park
发明人： Jeong-Yong Bae , Chang-Ro Yoon , Pyeng-Jae Park
IPC分类号： H01L21302
CPC分类号： H01L21/67028 , H01L21/67034
摘要： A method for drying a semiconductor substrate includes the steps of clearing the substrate by supplying a liquid into a processing bath of a chamber, injecting first dry gases onto a surface of the supplied liquid, draining the liquid from the processing bath so that the substrate is slowly exposed to the surface of the liquid, and injecting a second dry gas into the chamber and forcibly exhausting gas in the chamber.
摘要翻译：干燥半导体衬底的方法包括以下步骤：通过将液体供应到室的处理槽中来清洗衬底，将第一干燥气体注入到所提供的液体的表面上，从处理槽排出液体，使得衬底为缓慢地暴露于液体的表面，并且将第二干燥气体注入到室中并强制地排出腔室中的气体。

3. 发明授权

US06757989B2 Wafer drying apparatus 有权
标题翻译：晶圆烘干设备
公开(公告)号：US06757989B2
公开(公告)日：2004-07-06
申请号：US10183813
申请日：2002-06-26
申请人： Jeong-Yong Bae , Chang-Ro Yoon , Pyeng-Jae Park
发明人： Jeong-Yong Bae , Chang-Ro Yoon , Pyeng-Jae Park
IPC分类号： F26B1300
CPC分类号： H01L21/67034
摘要： An apparatus for drying a semiconductor substrate includes a chamber having a processing bath and a cover, a liquid flow system for supplying a liquid flow into the processing bath so as to clean the substrate and for draining a liquid from the processing bath, a gas distributor for spraying a gas for drying the substrate, and decompression means for exhausting air in the chamber.
摘要翻译：用于干燥半导体衬底的设备包括具有处理槽和盖的室，用于将液体流供应到处理槽中以便清洁衬底并从处理槽排出液体的液体流动系统，气体分配器用于喷射用于干燥基底的气体，以及用于排出腔室中的空气的减压装置。

4. 发明授权

US08113918B2 Substrate supporting unit and single type substrate polishing apparatus using the same 有权
标题翻译：基板支撑单元和使用其的单一基板抛光装置
公开(公告)号：US08113918B2
公开(公告)日：2012-02-14
申请号：US12273829
申请日：2008-11-19
申请人： Gyo-Woog Koo , Chang-Ro Yoon , Jung-Gun Cho , Ki-Hoon Choi , Jung-Bong Choi , Duk-Hyun Son , Se-Hun Goo
发明人： Gyo-Woog Koo , Chang-Ro Yoon , Jung-Gun Cho , Ki-Hoon Choi , Jung-Bong Choi , Duk-Hyun Son , Se-Hun Goo
IPC分类号： B24B5/02
CPC分类号： B24B37/30 , H01L21/6838 , H01L21/68728 , H01L21/68742
摘要： Provided are a substrate supporting unit and a single type substrate polishing apparatus using the substrate supporting unit. During a polishing process, the bottom surface of a substrate is attached to the substrate supporting unit by vacuum suction, and during a post-cleaning process, the substrate is supported by the substrate supporting unit at a position spaced apart from the substrate supporting unit for cleaning the bottom surface of the substrate. Therefore, according to the substrate supporting unit and the substrate polishing apparatus using the substrate supporting unit, in a state where the substrate is supported by the single type substrate supporting unit, a process for polishing the top surface of the substrate and a post-process for cleaning the top and bottom surfaces of the substrate can be sequentially performed.
摘要翻译：提供了一种基板支撑单元和使用该基板支撑单元的单一基板抛光装置。在抛光过程中，通过真空抽吸将衬底的底表面附接到衬底支撑单元，并且在后清洗过程中，衬底由衬底支撑单元支撑在与衬底支撑单元间隔开的位置，用于清洁基底的底面。因此，根据基板支撑单元和使用基板支撑单元的基板研磨装置，在基板由单一基板支撑单元支撑的状态下，对基板的顶面进行研磨的工序和后处理可以依次执行用于清洁基板的顶表面和底表面的清洁。

5. 发明授权

US08398812B2 Apparatus and method for treating substrates 有权
标题翻译：用于处理底物的装置和方法
公开(公告)号：US08398812B2
公开(公告)日：2013-03-19
申请号：US11888204
申请日：2007-07-31
申请人： Yi Jung Kim , Kyung Jin Seo , Chang Ro Yoon , Jung Keun Cho
发明人： Yi Jung Kim , Kyung Jin Seo , Chang Ro Yoon , Jung Keun Cho
IPC分类号： C25F5/00 , B08B3/02
CPC分类号： B08B7/0035 , G03F7/422 , G03F7/427 , H01L21/67069 , H01L21/6708
摘要： A substrate treating apparatus for stripping photoresist on a substrate includes a support part for supporting the substrate, a dry-type treating part for stripping the photoresist on the substrate, and a wet-type treating part for stripping the photoresist on the substrate. While the substrate is supported by the support part, the photoresist on the substrate is primarily stripped by means of the dry-type treating part and secondarily stripped by means of the wet-type treating part. The dry-type treating part includes a plasma supply unit configured to supply plasma onto the substrate and a moving unit configured to vary a relative position of the plasma supply unit and the substrate.
摘要翻译：用于剥离基板上的光致抗蚀剂的基板处理装置包括用于支撑基板的支撑部分，用于剥离基板上的光致抗蚀剂的干式处理部分和用于剥离基板上的光致抗蚀剂的湿式处理部件。当基板由支撑部支撑时，基板上的光致抗蚀剂主要通过干式处理部分剥离，并且通过湿式处理部分二次剥离。干式处理部件包括：等离子体供给单元，其被配置为将等离子体供应到基板上;以及移动单元，被配置为改变等离子体供给单元和基板的相对位置。

6. 发明授权

US07637272B2 Method and apparatus for cleaning and drying substrates 有权
标题翻译：洗涤和干燥基材的方法和设备
公开(公告)号：US07637272B2
公开(公告)日：2009-12-29
申请号：US11433403
申请日：2006-05-15
申请人： Jung-Keun Cho , Chang-Ro Yoon , Kyo-Woog Koo
发明人： Jung-Keun Cho , Chang-Ro Yoon , Kyo-Woog Koo
IPC分类号： B08B3/00
CPC分类号： H01L21/67028
摘要： The present invention provides an apparatus and method for cleaning substrates such as semiconductor wafers by sinking the substrates into cleaning fluids such as cleaning chemicals or rinsing liquids and then drying the substrates. The substrate clean and dry apparatus of present invention includes a process chamber comprising a cleaning chamber that carries the cleaning fluid and discharges at bottom the cleaning fluid; and a drying chamber above the cleaning chamber. The process chamber further includes a discharge device for evacuating the gas from the drying chamber, the gas supplied into the drying chamber. The discharge device is located between the cleaning chamber and the drying chamber, and evacuates the gas by force such that the gas is driven down vertically in the drying chamber. The substrate clean and dry apparatus of the present invention generates fairly vertical and uniform gas flows over the surfaces of substrates in the drying chamber, and also evacuates the gas rapidly from the drying chamber, thereby enhancing efficiency of the drying process.
摘要翻译：本发明提供了一种用于通过将衬底沉积到诸如清洁化学品或冲洗液体之类的清洁流体中然后干燥衬底来清洁诸如半导体晶片的衬底的装置和方法。本发明的基板清洁干燥装置包括一个处理室，该处理室包括一个清洁室，该清洁室承载清洁流体并在底部排出清洁流体; 以及清洁室上方的干燥室。处理室还包括用于从干燥室排出气体的排出装置，供应到干燥室中的气体。排出装置位于清洁室和干燥室之间，并且通过力抽空气体，使得气体在干燥室中垂直向下驱动。本发明的基板清洁和干燥装置在干燥室中的基板表面上产生相当垂直和均匀的气流，并且还从干燥室中迅速排出气体，从而提高干燥过程的效率。

7. 发明申请

US20080047580A1 Apparatus and method for treating substrates 有权
标题翻译：用于处理底物的装置和方法
公开(公告)号：US20080047580A1
公开(公告)日：2008-02-28
申请号：US11888204
申请日：2007-07-31
申请人： Yi Jung Kim , Kyung Jin Seo , Chang Ro Yoon , Jung Keun Cho
发明人： Yi Jung Kim , Kyung Jin Seo , Chang Ro Yoon , Jung Keun Cho
IPC分类号： C25F5/00 , B08B3/02
CPC分类号： B08B7/0035 , G03F7/422 , G03F7/427 , H01L21/67069 , H01L21/6708
摘要： A substrate treating apparatus for stripping photoresist on a substrate includes a support part for supporting the substrate, a dry-type treating part for stripping the photoresist on the substrate, and a wet-type treating part for stripping the photoresist on the substrate. While the substrate is supported by the support part, the photoresist on the substrate is primarily stripped by means of the dry-type treating part and secondarily stripped by means of the wet-type treating part. The dry-type treating part includes a plasma supply unit configured to supply plasma onto the substrate and a moving unit configured to vary a relative position of the plasma supply unit and the substrate.
摘要翻译：用于剥离基板上的光致抗蚀剂的基板处理装置包括用于支撑基板的支撑部分，用于剥离基板上的光致抗蚀剂的干式处理部分和用于剥离基板上的光致抗蚀剂的湿式处理部件。当基板由支撑部支撑时，基板上的光致抗蚀剂主要通过干式处理部分剥离，并且通过湿式处理部分二次剥离。干式处理部件包括：等离子体供给单元，其被配置为将等离子体供应到基板上;以及移动单元，被配置为改变等离子体供给单元和基板的相对位置。

8. 发明申请

US20060266386A1 Method and apparatus for cleaning and drying substrates 有权
公开(公告)号：US20060266386A1
公开(公告)日：2006-11-30
申请号：US11433403
申请日：2006-05-15
申请人： Jung-Keun Cho , Chang-Ro Yoon , Kyo-Woog Koo
发明人： Jung-Keun Cho , Chang-Ro Yoon , Kyo-Woog Koo
IPC分类号： B08B3/02
CPC分类号： H01L21/67028
摘要： The present invention provides an apparatus and method for cleaning substrates such as semiconductor wafers by sinking the substrates into cleaning fluids such as cleaning chemicals or rinsing liquids and then drying the substrates. The substrate clean and dry apparatus of present invention includes a process chamber comprising a cleaning chamber that carries the cleaning fluid and discharges at bottom the cleaning fluid; and a drying chamber above the cleaning chamber. The process chamber further includes a discharge device for evacuating the gas from the drying chamber, the gas supplied into the drying chamber. The discharge device is located between the cleaning chamber and the drying chamber, and evacuates the gas by force such that the gas is driven down vertically in the drying chamber. The substrate clean and dry apparatus of the present invention generates fairly vertical and uniform gas flows over the surfaces of substrates in the drying chamber, and also evacuates the gas rapidly from the drying chamber, thereby enhancing efficiency of the drying process.

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