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1. 发明申请

US20170341926A9 MICROELECTROMECHANICAL SYSTEM DEVICES HAVING CRACK RESISTANT MEMBRANE STRUCTURES AND METHODS FOR THE FABRICATION THEREOF 有权
公开(公告)号：US20170341926A9
公开(公告)日：2017-11-30
申请号：US14537498
申请日：2014-11-10
申请人： Chad S Dawson , Dubravka Bilic , Lianjun Liu , Andrew C McNeil
发明人： Chad S Dawson , Dubravka Bilic , Lianjun Liu , Andrew C McNeil
IPC分类号： B81B3/00 , G01L9/00
CPC分类号： B81B3/007 , B81B2201/0264 , B81B2203/0127 , G01L9/0072
摘要： Methods for fabricating crack resistant Microelectromechanical (MEMS) devices are provided, as are MEMS devices produced pursuant to such methods. In one embodiment, the method includes forming a sacrificial body over a substrate, producing a multi-layer membrane structure on the substrate, and removing at least a portion of the sacrificial body to form an inner cavity within the multi-layer membrane structure. The multi-layer membrane structure is produced by first forming a base membrane layer over and around the sacrificial body such that the base membrane layer has a non-planar upper surface. A predetermined thickness of the base membrane layer is then removed to impart the base membrane layer with a planar upper surface. A cap membrane layer is formed over the planar upper surface of the base membrane layer. The cap membrane layer is composed of a material having a substantially parallel grain orientation.

2. 发明申请

US20150059484A1 MICROELECTROMECHANICAL SYSTEM DEVICES HAVING CRACK RESISTANT MEMBRANE STRUCTURES AND METHODS FOR THE FABRICATION THEREOF 有权
标题翻译：具有抗裂膜结构的微电子系统装置及其制造方法
公开(公告)号：US20150059484A1
公开(公告)日：2015-03-05
申请号：US14537498
申请日：2014-11-10
申请人： Chad S Dawson , Dubravka Bilic , Lianjun Liu , Andrew C McNeil
发明人： Chad S Dawson , Dubravka Bilic , Lianjun Liu , Andrew C McNeil
IPC分类号： G01L9/12
CPC分类号： B81B3/007 , B81B2201/0264 , B81B2203/0127 , G01L9/0072
摘要： Methods for fabricating crack resistant Microelectromechanical (MEMS) devices are provided, as are MEMS devices produced pursuant to such methods. In one embodiment, the method includes forming a sacrificial body over a substrate, producing a multi-layer membrane structure on the substrate, and removing at least a portion of the sacrificial body to form an inner cavity within the multi-layer membrane structure. The multi-layer membrane structure is produced by first forming a base membrane layer over and around the sacrificial body such that the base membrane layer has a non-planar upper surface. A predetermined thickness of the base membrane layer is then removed to impart the base membrane layer with a planar upper surface. A cap membrane layer is formed over the planar upper surface of the base membrane layer. The cap membrane layer is composed of a material having a substantially parallel grain orientation.
摘要翻译：提供了制造抗电微机电（MEMS）器件的方法，以及根据这些方法制造的MEMS器件。在一个实施例中，该方法包括在衬底上形成牺牲体，在衬底上产生多层膜结构，以及去除牺牲体的至少一部分以在多层膜结构内形成内腔。多层膜结构通过首先在牺牲体上方和周围形成基膜层使得基膜层具有非平面的上表面来制造。然后去除预定厚度的基膜层，以使基膜层具有平坦的上表面。在基膜层的平面上表面上形成盖膜层。盖膜层由具有基本上平行的晶粒取向的材料构成。

3. 发明授权

US08922227B2 Systems and methods for detecting surface charge 有权
标题翻译：用于检测表面电荷的系统和方法
公开(公告)号：US08922227B2
公开(公告)日：2014-12-30
申请号：US13043075
申请日：2011-03-08
申请人： Chad S. Dawson , Bernhard H. Grote , Woo Tae Park
发明人： Chad S. Dawson , Bernhard H. Grote , Woo Tae Park
IPC分类号： G01R27/08 , G01R29/24
CPC分类号： G01R29/24
摘要： Systems and methods are provided for detecting surface charge on a semiconductor substrate having a sensing arrangement formed thereon. An exemplary sensing system includes the semiconductor substrate having the sensing arrangement formed thereon, and a module coupled to the sensing arrangement. The module obtains a first voltage output from the sensing arrangement when a first voltage is applied to the semiconductor substrate, obtains a second voltage output from the sensing arrangement when a second voltage is applied to the semiconductor substrate, and detects electric charge on the surface of the semiconductor substrate based on a difference between the first voltage output and the second voltage output.
摘要翻译：提供了用于检测在其上形成有感测装置的半导体衬底上的表面电荷的系统和方法。示例性感测系统包括其上形成有感测装置的半导体衬底和耦合到感测装置的模块。当向半导体衬底施加第一电压时，模块获得从感测装置输出的第一电压，当向半导体衬底施加第二电压时获得从感测装置输出的第二电压，并且检测表面上的电荷基于第一电压输出和第二电压输出之间的差的半导体衬底。

4. 发明申请

US20140182353A1 METHOD AND SYSTEM TO COMPENSATE FOR TEMPERATURE AND PRESSURE IN PIEZO RESISTIVE DEVICES 有权
标题翻译：在PIEZO电阻器件中补偿温度和压力的方法和系统
公开(公告)号：US20140182353A1
公开(公告)日：2014-07-03
申请号：US14197221
申请日：2014-03-05
申请人： Siddhartha Gopal Krishna , Chad S. Dawson , Vikram Varma
发明人： Siddhartha Gopal Krishna , Chad S. Dawson , Vikram Varma
IPC分类号： G01L27/00
CPC分类号： G01L27/005 , G01L9/065 , G01L27/002
摘要： A method and system to calibrate temperature and pressure in piezo resistive devices for non-linear sensors having two variables, where a piezo resistive device such as a piezo resistive transducer (PRT) used for example in a pressure sensor system is calibrated to calculate actual/ambient temperature and pressure even though the PRT impedance is unbalanced relative to pressure.
摘要翻译：一种用于校准具有两个变量的非线性传感器的压电器件中的温度和压力的方法和系统，其中压电电阻器件例如压力传感器系统中使用的压阻式换能器（PRT）被校准以计算实际/ 环境温度和压力即使PRT阻抗相对于压力不平衡。

5. 发明授权

US08701460B2 Method and system to compensate for temperature and pressure in piezo resistive devices 有权
标题翻译：用于补偿压电器件温度和压力的方法和系统
公开(公告)号：US08701460B2
公开(公告)日：2014-04-22
申请号：US13077963
申请日：2011-03-31
申请人： Siddhartha Gopal Krishna , Chad S. Dawson , Vikram Varma
发明人： Siddhartha Gopal Krishna , Chad S. Dawson , Vikram Varma
IPC分类号： G01L27/00
CPC分类号： G01L27/005 , G01L9/065 , G01L27/002
摘要： A method and system to calibrate temperature and pressure in piezo resistive devices for non-linear sensors having two variables, where a piezo resistive device such as a piezo resistive transducer (PRT) used for example in a pressure sensor system is calibrated to calculate actual/ambient temperature and pressure even though the PRT impedance is unbalanced relative to pressure.
摘要翻译：一种用于校准具有两个变量的非线性传感器的压电器件中的温度和压力的方法和系统，其中压电电阻器件例如压力传感器系统中使用的压阻式换能器（PRT）被校准以计算实际/ 环境温度和压力即使PRT阻抗相对于压力不平衡。

6. 发明授权

US09157826B2 Method and system to compensate for temperature and pressure in piezo resistive devices 有权
标题翻译：用于补偿压电器件温度和压力的方法和系统
公开(公告)号：US09157826B2
公开(公告)日：2015-10-13
申请号：US14197221
申请日：2014-03-05
申请人： Siddhartha Gopal Krishna , Chad S. Dawson , Vikram Varma
发明人： Siddhartha Gopal Krishna , Chad S. Dawson , Vikram Varma
IPC分类号： G01L27/00 , G01L9/06
CPC分类号： G01L27/005 , G01L9/065 , G01L27/002
摘要： A method and system to calibrate temperature and pressure in piezo resistive devices for non-linear sensors having two variables, where a piezo resistive device such as a piezo resistive transducer (PRT) used for example in a pressure sensor system is calibrated to calculate actual/ambient temperature and pressure even though the PRT impedance is unbalanced relative to pressure.
摘要翻译：一种用于校准具有两个变量的非线性传感器的压电器件中的温度和压力的方法和系统，其中压电电阻器件例如压力传感器系统中使用的压阻式换能器（PRT）被校准以计算实际/ 环境温度和压力即使PRT阻抗相对于压力不平衡。

7. 发明申请

US20140287547A1 INHIBITING PROPAGATION OF SURFACE CRACKS IN A MEMS DEVICE 有权
标题翻译：抑制MEMS器件中表面裂纹的传播
公开(公告)号：US20140287547A1
公开(公告)日：2014-09-25
申请号：US13848819
申请日：2013-03-22
申请人： Chad S. Dawson
发明人： Chad S. Dawson
IPC分类号： B81C1/00
CPC分类号： B81B7/0016 , B81B3/0078 , B81C2201/017
摘要： A microelectromechanical systems (MEMS) device (58) includes a structural layer (78) having a top surface (86). The top surface (86) includes surface regions (92, 94) that are generally parallel to one another but are offset relative to one another such that a stress concentration location (90) is formed between them. Laterally propagating shallow surface cracks (44) have a tendency to form in the structural layer (78), especially near the joints (102) between the surface regions (92, 94). A method (50) entails fabricating (52) the MEMS device (58) and forming (54) trenches (56) in the top surface (86) of the structural layer (78) of the MEMS device (58). The trenches (56) act as a crack inhibition feature to largely prevent the formation of deep cracks in structural layer (78) which might otherwise result in MEMS device failure.
摘要翻译：微机电系统（MEMS）装置（58）包括具有顶表面（86）的结构层（78）。顶表面（86）包括通常彼此平行但相对于彼此偏移的表面区域（92,94），使得在它们之间形成应力集中位置（90）。横向传播的浅表面裂纹（44）在结构层（78）中尤其是在表面区域（92,94）之间的接头（102）附近形成倾向。方法（50）需要在MEMS装置（58）的结构层（78）的顶表面（86）中制造（52）MEMS器件（58）并形成（54）沟槽（56）。沟槽（56）用作裂纹抑制特征，以大大地防止在结构层（78）中形成深裂纹，否则可能导致MEMS器件失效。

8. 发明申请

US20140210018A1 MICROELECTROMECHANICAL SYSTEM DEVICES HAVING CRACK RESISTANT MEMBRANE STRUCTURES AND METHODS FOR THE FABRICATION THEREOF 有权
标题翻译：具有抗裂膜结构的微电子系统装置及其制造方法
公开(公告)号：US20140210018A1
公开(公告)日：2014-07-31
申请号：US13753034
申请日：2013-01-29
申请人： Chad S. Dawson , Dubravka Bilic , Lianjun Liu , Andrew C. McNeil
发明人： Chad S. Dawson , Dubravka Bilic , Lianjun Liu , Andrew C. McNeil
IPC分类号： B81B3/00 , B81C1/00
CPC分类号： B81B3/0018 , B81B3/0072 , B81B2203/0127 , B81C1/00015
摘要： Methods for fabricating crack resistant Microelectromechanical (MEMS) devices are provided, as are MEMS devices produced pursuant to such methods. In one embodiment, the method includes forming a sacrificial body over a substrate, producing a multi-layer membrane structure on the substrate, and removing at least a portion of the sacrificial body to form an inner cavity within the multi-layer membrane structure. The multi-layer membrane structure is produced by first forming a base membrane layer over and around the sacrificial body such that the base membrane layer has a non-planar upper surface. A predetermined thickness of the base membrane layer is then removed to impart the base membrane layer with a planar upper surface. A cap membrane layer is formed over the planar upper surface of the base membrane layer. The cap membrane layer is composed of a material having a substantially parallel grain orientation.
摘要翻译：提供了制造抗电微机电（MEMS）器件的方法，以及根据这些方法制造的MEMS器件。在一个实施例中，该方法包括在衬底上形成牺牲体，在衬底上产生多层膜结构，以及去除牺牲体的至少一部分以在多层膜结构内形成内腔。多层膜结构通过首先在牺牲体上方和周围形成基膜层使得基膜层具有非平面的上表面来制造。然后去除预定厚度的基膜层，以使基膜层具有平坦的上表面。在基膜层的平面上表面上形成盖膜层。盖膜层由具有基本上平行的晶粒取向的材料构成。

9. 发明申请

US20130317772A1 SENSOR DEVICE AND RELATED OPERATING METHODS 有权
标题翻译：传感器装置及相关操作方法
公开(公告)号：US20130317772A1
公开(公告)日：2013-11-28
申请号：US13479168
申请日：2012-05-23
申请人： Chad S. Dawson
发明人： Chad S. Dawson
IPC分类号： G06F19/00 , G06F15/00
CPC分类号： G01L9/065 , G01L27/002
摘要： Apparatus, systems, and fabrication methods are provided for sensing devices. An exemplary sensing device includes a first sensing arrangement to measure a first property and provide one or more measured values for the first property, a second sensing arrangement to measure a second property, a storage element coupled to the second sensing arrangement to maintain a stored value for the second property measured by the second sensing arrangement, and a control system coupled to the first sensing arrangement and the storage element to determine one or more calibrated measurement values for the first property using the one or more measured values for the first property from the first sensing arrangement and the stored value for the second property.
摘要翻译：提供了用于感测装置的装置，系统和制造方法。示例性感测装置包括用于测量第一属性并提供用于第一属性的一个或多个测量值的第一感测装置，用于测量第二属性的第二感测装置，耦合到第二感测装置的存储元件，以保持存储值对于由第二感测装置测量的第二属性，以及耦合到第一感测装置和存储元件的控制系统，以使用来自第一感测装置的第一属性的一个或多个测量值来确定第一属性的一个或多个校准测量值第一感测布置和第二属性的存储值。

10. 发明申请

US20120247175A1 METHOD AND SYSTEM TO COMPENSATE FOR TEMPERATURE AND PRESSURE IN PIEZO RESISTIVE DEVICES 有权
标题翻译：在PIEZO电阻器件中补偿温度和压力的方法和系统
公开(公告)号：US20120247175A1
公开(公告)日：2012-10-04
申请号：US13077963
申请日：2011-03-31
申请人： Siddhartha Gopal Krishna , Chad S. Dawson , Vikram Varma
发明人： Siddhartha Gopal Krishna , Chad S. Dawson , Vikram Varma
IPC分类号： G01L27/00
CPC分类号： G01L27/005 , G01L9/065 , G01L27/002
摘要： A method and system to calibrate temperature and pressure in piezo resistive devices for non-linear sensors having two variables, where a piezo resistive device such as a piezo resistive transducer (PRT) used for example in a pressure sensor system is calibrated to calculate actual/ambient temperature and pressure even though the PRT impedance is unbalanced relative to pressure.
摘要翻译：一种用于校准具有两个变量的非线性传感器的压电器件中的温度和压力的方法和系统，其中压电电阻器件例如压力传感器系统中使用的压阻式换能器（PRT）被校准以计算实际/ 环境温度和压力即使PRT阻抗相对于压力不平衡。

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