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1. 发明申请

WO2012097833A1 METHOD OF OPERATING A PROJECTION EXPOSURE TOOL 审中-公开
标题翻译：投影曝光工具的操作方法
公开(公告)号：WO2012097833A1
公开(公告)日：2012-07-26
申请号：PCT/EP2011/000225
申请日：2011-01-20
申请人： CARL ZEISS SMT GMBH , CONRADI, Olaf , TOTZECK, Michael , LÖRING, Ulrich , JÜRGENS, Dirk , MÜLLER, Ralf , WALD, Christian
发明人： CONRADI, Olaf , TOTZECK, Michael , LÖRING, Ulrich , JÜRGENS, Dirk , MÜLLER, Ralf , WALD, Christian
IPC分类号： G03F7/20
CPC分类号： G03F7/70891 , G03F7/70141 , G03F7/70483 , G03F7/70516 , G03F7/708
摘要： A method of operating a projection exposure tool (10) for microlithography is provided. The projection exposure tool (10) has a projection objective (26) for imaging object structures on a mask (20) into an image plane (28) using electromagnetic radiation (13, 13a, 13b), during which imaging the electromagnetic radiation (13b) causes a change in optical properties of the projection objective (26). The method comprises the steps of: providing the layout of the object structures on the mask (20) to be imaged and classifying the object structures according to their type of structure, calculating the change in the optical properties of the projection objective (26) effected during the imaging process on the basis of the classification of the object structures, and using the projection exposure tool (10) for imaging the object structures into the image plane (28), wherein the imaging behavior of the projection exposure tool (10) is adjusted on the basis of the calculated change of the optical properties in order to at least partly compensate for the change of the optical properties of the projection objective (26) caused by the electromagnetic radiation (13, 13a, 13b) during the imaging process.
摘要翻译：提供了一种操作用于微光刻的投影曝光工具（10）的方法。投影曝光工具（10）具有用于使用电磁辐射（13,13a，13b）将掩模（20）上的物体结构成像到图像平面（28）中的投影物镜（26），在此期间对电磁辐射（13b）进行成像）导致投影物镜（26）的光学特性的变化。该方法包括以下步骤：在要成像的掩模（20）上提供对象结构的布局，并根据其结构类型对对象结构进行分类，计算投影物镜（26）的光学特性的变化在所述成像处理期间，基于所述物体结构的分类，以及使用所述投影曝光工具（10）将所述物体结构成像到所述图像平面（28）中，其中所述投影曝光工具（10）的成像特性为基于所计算的光学特性的变化进行调整，以至少部分地补偿由成像过程中的电磁辐射（13,13a，13b）引起的投影物镜（26）的光学特性的变化。

2. 发明申请

WO2008122410A3 OPTICAL CORRECTION ELEMENT AND METHOD FOR THE CORRECTION OF TEMPERATURE-INDUCED IMAGING ABERRATIONS IN OPTICAL SYSTEMS, PROJECTION OBJECTIVE AND PROJECTION EXPOSURE APPARATUS FOR SEMICONDUCTOR LITHOGRAPHY 审中-公开
标题翻译：光学校正元件和校正光学系统中温度诱导成像的方法，投影目标和投影曝光装置的半导体光刻
公开(公告)号：WO2008122410A3
公开(公告)日：2009-01-29
申请号：PCT/EP2008002693
申请日：2008-04-04
申请人： ZEISS CARL SMT AG , KRAEHMER DANIEL , CONRADI OLAF , DODOC AURELIAN , LOERING ULRICH
发明人： KRAEHMER DANIEL , CONRADI OLAF , DODOC AURELIAN , LOERING ULRICH
IPC分类号： G02B26/02 , G02B27/00 , G03F7/20
CPC分类号： G03F7/70958 , G02B7/008 , G02B17/0892 , G02B27/0025 , G03F7/70225 , G03F7/70258
摘要： The invention relates to a method for the correction of temperature-induced imaging aberrations of an optical system. In this case, the correction is effected using a liquid layer (24) arranged in the optical system in such a way that the imaging aberrations are compensated for by an inhomogeneous temperature distribution being formed in the liquid layer (24) through absorption of optical useful radiation. Furthermore, the invention relates to an optical correction element (21) for application in said method, and to a projection objective (7) and a projection exposure apparatus (1) having the optical correction element (21) according to the invention.
摘要翻译：本发明涉及一种用于校正光学系统的温度诱导成像像差的方法。在这种情况下，使用布置在光学系统中的液体层（24）进行校正，使得通过吸收光学有用的在液体层（24）中形成的不均匀的温度分布来补偿成像像差辐射。此外，本发明涉及用于所述方法的光学校正元件（21）以及具有根据本发明的光学校正元件（21）的投影物镜（7）和投影曝光设备（1）。

3. 发明申请

WO2007017089A1 PROJECTION OBJECTIVE OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 审中-公开
标题翻译：微波投影曝光装置的投影目标
公开(公告)号：WO2007017089A1
公开(公告)日：2007-02-15
申请号：PCT/EP2006/007273
申请日：2006-07-24
申请人： CARL ZEISS SMT AG , CONRADI, Olaf , BITTNER, Boris , BLEIDISTEL, Sascha , HAUF, Markus , HUMMEL, Wolfgang , KAZI, Arif , TROSSBACH, Bärbel , WEBER, Jochen , HOLDERER, Hubert , TAYEBATI, Payam
发明人： CONRADI, Olaf , BITTNER, Boris , BLEIDISTEL, Sascha , HAUF, Markus , HUMMEL, Wolfgang , KAZI, Arif , TROSSBACH, Bärbel , WEBER, Jochen , HOLDERER, Hubert , TAYEBATI, Payam
IPC分类号： G03F7/20 , G02B7/00
CPC分类号： G02B27/0068 , G02B3/14 , G03F7/70266 , G03F7/70825
摘要： A projection objective of a microlithographic projection exposure apparatus comprises a manipulator (M; M') for reducing rotationally asymmetric image errors. The manipulator in turn contains a lens (52; 52') , an optical element (50; 50') and an interspace (54; 54') formed between the lens (52; 52') and the optical element (50; 50'), which can be filled with a liquid (62). At least one actuator (711 to 718) acting exclusively on the lens (52; 52') is furthermore provided, which can generate a rotationally asymmetric deformation of the lens.
摘要翻译：微光刻投影曝光装置的投影物镜包括用于减小旋转非对称图像误差的操纵器（M; M'）。操纵器又包含透镜（52; 52'），光学元件（50; 50'）和形成在透镜（52; 52'）和光学元件（50; 50'）之间的间隙（54; 54'） '），其可以用液体（62）填充。还提供至少一个仅对透镜（52; 52'）起作用的致动器（711至718），其可以产生透镜的旋转不对称变形。

4. 发明申请

WO2006125617A2 METHOD FOR IMPROVING THE IMAGING PROPERTIES OF A PROJECTION OBJECTIVE, AND SUCH A PROJECTION OBJECTIVE 审中-公开
标题翻译：改进投影目标成像特性的方法及其投影目标
公开(公告)号：WO2006125617A2
公开(公告)日：2006-11-30
申请号：PCT/EP2006/004929
申请日：2006-05-24
申请人： CARL ZEISS SMT AG , CONRADI, Olaf , FELDMANN, Heiko , RICHTER, Gerald , BLEIDISTEL, Sascha , FROMMEYER, Andreas , GRUNER, Toralf , HUMMEL, Wolfgang
发明人： CONRADI, Olaf , FELDMANN, Heiko , RICHTER, Gerald , BLEIDISTEL, Sascha , FROMMEYER, Andreas , GRUNER, Toralf , HUMMEL, Wolfgang
IPC分类号： G03F7/20
CPC分类号： G02B27/0068 , G02B3/0081 , G02B26/0825 , G03F7/7015 , G03F7/70266 , G03F7/70558 , Y10S359/90
摘要： The invention relates to a method for improving the imaging properties of a microlithography projection objective, wherein the projection objective has a plurality of lenses between an object plane and an image plane, a first lens of the plurality of lenses being assigned a first manipulator for actively deforming the lens, the first lens being deformed for at least partially correcting an aberration, at least one second lens of the plurality of lenses furthermore being assigned at least one second manipulator, and the second lens being deformed in addition to the first lens. Furthermore, a method is described for selecting at least one lens of a plurality of lenses of a projection objective as actively deformable element, and a projection objective.
摘要翻译：本发明涉及一种用于改善微光刻投影物镜的成像特性的方法，其中所述投影物镜在物平面和像平面之间具有多个透镜，所述多个透镜的第一透镜被分配用于主动的第一操纵器使透镜变形，第一透镜被变形以至少部分地校正像差，多个透镜中的至少一个第二透镜进一步被分配至少一个第二操纵器，并且第二透镜除了第一透镜之外也变形。此外，描述了一种用于选择投影物镜的多个透镜中的至少一个透镜作为主动变形元件和投影物镜的方法。

5. 发明申请

WO2012041341A1 PROJECTION EXPOSURE SYSTEM AND PROJECTION EXPOSURE METHOD 审中-公开
标题翻译：投影曝光系统和投影曝光方法
公开(公告)号：WO2012041341A1
公开(公告)日：2012-04-05
申请号：PCT/EP2010/005949
申请日：2010-09-30
申请人： CARL ZEISS SMT GMBH , GRÄUPNER, Paul , CONRADI, Olaf , ZACZEK, Christoph , ULRICH, Wilhelm , BEIERL, Helmut , GRUNER, Toralf , GRÄSCHUS, Volker
发明人： GRÄUPNER, Paul , CONRADI, Olaf , ZACZEK, Christoph , ULRICH, Wilhelm , BEIERL, Helmut , GRUNER, Toralf , GRÄSCHUS, Volker
IPC分类号： G03F7/20
CPC分类号： G03F7/70191 , G03F7/70308
摘要： A projection exposure system comprises an illumination system (ILL) configured to receive primary radiation with operating wavelength λ generated by a primary radiation source (S) and to form the primary radiation to generate illumination radiation incident on a mask (M) providing a prescribed pattern (PAT) and a projection objective (PO) configured to project an image of the pattern arranged in an object surface (OS) of the projection objective onto a radiation-sensitive substrate (W) arranged in an image surface (IS) of the projection objective at an image-side numerical aperture NA. An angle-selective filter arrangement (FA) is arranged at or close to a field surface of the projection objective in a projection beam path optically downstream of the object surface. The angle- selective filter arrangement is effective to filter radiation incident on the filter arrangement according to an angle-selective filter function. The filter function comprises a pass band (PB) with relatively high transmittance of intensity of incident radiation for angles of incidence smaller than a cut-off angle of incidence AOI CUT , and a stop band (SB) with relatively low transmittance of intensity of incident radiation for angles of incidence greater than the cut-off angle of incidence AOI CUT . The condition AOI CUT = arcsin (NA * | β | ) holds, with β being a magnification of an image formation between the field surface at or adjacent to the filter plane and the image surface of the projection objective.
摘要翻译：投影曝光系统包括被配置为接收工作波长λ的初级辐射的照明系统（ILL）由主辐射源（S）产生并且形成主辐射以产生入射到提供规定图案（PAT）的掩模（M）上的照射辐射和投影物镜（P），投影物镜（PO）被配置为投影布置在将投影物镜的物体表面（OS）放置在布置在像侧数值孔径NA处的投影物镜的图像表面（IS）中的辐射敏感衬底（W）上。角度选择性滤光器布置（FA）布置在投影物镜的场表面或靠近物体表面光学下游的投影光束路径中。角度选择滤波器装置可以根据角度选择滤波器的功能对入射到滤波器装置上的辐射进行滤波。滤波器功能包括对入射角小于入射角AOICUT的入射辐射强度具有较高透射率的通带（PB），以及入射辐射强度相对较低透射率的阻带（SB）对于入射角大于截止入射角AOICUT。条件AOICUT = arcsin（NA * |ß|）成立，其中ß是在滤波器平面处或与滤光片平面相邻的场表面与投影物镜的图像表面之间的图像形成的放大率。

6. 发明申请

WO2014086905A1 REFLECTIVE OPTICAL ELEMENT FOR EUV LITHOGRAPHY AND METHOD OF MANUFACTURING A REFLECTIVE OPTICAL ELEMENT 审中-公开
标题翻译：反射光学元件的反射光学元件和制造反射光学元件的方法
公开(公告)号：WO2014086905A1
公开(公告)日：2014-06-12
申请号：PCT/EP2013/075620
申请日：2013-12-05
申请人： CARL ZEISS SMT GMBH , WABRA, Norbert , BITTNER, Boris , VON HODENBERG, Martin , ENKISCH, Hartmut , MÜLLENDER, Stephan , CONRADI, Olaf
发明人： WABRA, Norbert , BITTNER, Boris , VON HODENBERG, Martin , ENKISCH, Hartmut , MÜLLENDER, Stephan , CONRADI, Olaf
IPC分类号： G03F7/20 , G02B5/08 , G21K1/06 , G03F1/22
CPC分类号： G03F7/702 , B82Y10/00 , G02B5/0816 , G02B5/0891 , G02B17/0663 , G02B27/1033 , G03F7/70308 , G03F7/70316 , G03F7/70916 , G03F7/70958 , G21K1/062
摘要： The invention relates to a reflective optical element of an optical system for EUV lithography as well as to a method of manufacturing a reflective optical element of an optical system for EUV lithography, said reflective optical element (20) comprising a multilayer system (23, 83) for reflecting an incident electromagnetic wave having an operating wavelength in the EUV range, the reflected wave having a phase φ, and a capping layer (25, 85) made from a capping layer material, wherein the method comprises the following steps: determining, for said capping layer material, a dependency according to which the phase of the reflected wave varies with the thickness of the capping layer, determining a linearity-region in said dependency in which the phase of the reflected wave varies substantially linearly with the thickness of the capping layer (25, 85), and creating a thickness profile in said capping layer (25, 85) such that both the maximum thickness and the minimum thickness in said thickness profile are in said linearity-region.
摘要翻译：本发明涉及用于EUV光刻的光学系统的反射光学元件以及制造用于EUV光刻的光学系统的反射光学元件的方法，所述反射光学元件（20）包括多层系统（23,83 ），用于反射具有在EUV范围内的工作波长的入射电磁波，所述反射波具有相位和由覆盖层材料制成的覆盖层（25,85），其中所述方法包括以下步骤：确定对于所述覆盖层材料，依赖于反射波的相位随着覆盖层的厚度而变化的依赖性，确定所述依赖性中的线性区域，其中反射波的相位基本上以封盖层（25,85），并且在所述封盖层（25,85）中产生厚度分布，使得所述封盖层（25,85）中的最大厚度和最小厚度厚度分布在所述线性区域中。

7. 发明申请

WO2009046895A1 MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 审中-公开
标题翻译：微波投影曝光装置
公开(公告)号：WO2009046895A1
公开(公告)日：2009-04-16
申请号：PCT/EP2008/008251
申请日：2008-09-29
申请人： CARL ZEISS SMT AG , DODOC, Aurelian , BLEIDISTEL, Sascha , CONRADI, Olaf , KAZI, Arif
发明人： DODOC, Aurelian , BLEIDISTEL, Sascha , CONRADI, Olaf , KAZI, Arif
IPC分类号： G03F7/20
CPC分类号： G03F7/70891 , G03F7/70308
摘要： A microlithographic projection exposure apparatus (10) comprises a primary illumination system (12) producing projection light, a projection objective (20; 120) and a correction optical system. The latter comprises a secondary illumination system (30; 130), which produces an intensity distribution of correction light in a reference surface (48; 148), and a correction element (32; 132) which includes a heating material and is arranged in a plane (38; 174) being at least substantially optically conjugate to the reference surface (48; 148) such that the correction light and the projection light pass through at least one lens contained in the projection objective (20; 120) before they impinge on the correction element (32; 132). All lenses (34; L1 to L5) through which both the correction light and the projection light pass are made of a lens material which has a lower coefficient of absorption for the correction light than the heating material contained in the correction element.
摘要翻译：微光刻投影曝光装置（10）包括产生投影光的一次照明系统（12），投影物镜（20; 120）和校正光学系统。后者包括二次照明系统（30; 130），其在参考表面（48; 148）中产生校正光的强度分布;以及校正元件（32; 132），其包括加热材料并且布置在平面（38; 174）至少基本上与参考表面（48; 148）光学共轭，使得校正光和投影光在它们撞击之前穿过包含在投影物镜（20; 120）中的至少一个透镜所述校正元件（32; 132）。校正光和投影光通过的所有透镜（34; L1至L5）由与校正元件中包含的加热材料相比具有较低的校正光吸收系数的透镜材料制成。

8. 发明申请

WO2008023071A1 METHOD AND SYSTEM FOR CORRECTING IMAGE CHANGES 审中-公开
标题翻译：用于校正图像变化的方法和系统
公开(公告)号：WO2008023071A1
公开(公告)日：2008-02-28
申请号：PCT/EP2007/058852
申请日：2007-08-25
申请人： CARL ZEISS SMT AG , CONRADI, Olaf , GRUNER, Toralf
发明人： CONRADI, Olaf , GRUNER, Toralf
IPC分类号： G03F7/20
CPC分类号： G03F7/70891 , G03F7/70258
摘要： The present invention relates to a method for compensating imaging errors, generated by intensity distributions in optical systems, in particular, in projection lens arrays (3) of microlithography systems, comprising the steps in the following sequence: - determining the location- and time dependent intensity distributions in at least one optical element of the optical system; - determining the location- and/or time based absorbed energy in at least the optical element, for which the intensity distribution has been determined; - determining the deformations and/or changes of the optical properties of the optical element caused by the induced energy; and - selecting one or several compensation measures, depending on the results of the preceding steps. And the invention relates to an optical system for imaging an object, in particular to a projection lens for microlithography, preferably for applying the described method with at least one, preferably several, optical elements (4, 5), wherein at least one image detector (6, 7), which can be located in the optical path, is provided for intensity measurement, which directly measures the location- and/or time resolved intensity distribution in the optical path of the optical system.
摘要翻译：本发明涉及一种用于补偿由光学系统中的强度分布产生的成像误差的方法，特别是在微光刻系统的投影透镜阵列（3）中，包括以下步骤的步骤： - 确定位置和时间相关在光学系统的至少一个光学元件中的强度分布; - 确定至少已经确定了强度分布的至少光学元件中基于位置和/或时间的吸收能量; - 确定由所述感应能量引起的所述光学元件的光学特性的变形和/或变化; 以及 - 根据上述步骤的结果，选择一个或多个补偿措施。本发明涉及一种用于对物体进行成像的光学系统，特别涉及一种用于微光刻的投影透镜，优选地用至少一个，优选几个光学元件（4,5）应用所描述的方法，其中至少一个图像检测器（6,7）可以位于光路中，用于强度测量，其直接测量光学系统的光路中的位置和/或时间分辨强度分布。

9. 发明申请

WO2008089953A1 METHOD FOR IMPROVING IMAGING PROPERTIES OF AN OPTICAL SYSTEM, AND OPTICAL SYSTEM 审中-公开
标题翻译：改进光学系统成像特性的方法和光学系统
公开(公告)号：WO2008089953A1
公开(公告)日：2008-07-31
申请号：PCT/EP2008/000459
申请日：2008-01-22
申请人： CARL ZEISS SMT AG , CONRADI, Olaf
发明人： CONRADI, Olaf
IPC分类号： G03F7/20
CPC分类号： G03F7/70266 , G03F7/70191 , G03F7/70308 , G03F7/70891
摘要： A method for improving imaging properties of an optical system (10) and also an optical system (10) of this type having improved imaging properties are described. The optical system (10) has a plurality of optical elements. For at least partly correcting at least one imaging aberration, at least a first optical element (42) from the plurality of optical elements is positioned and/or deformed by means of mechanical force action (72) and by means of thermal action (76), or the at least first optical element (42) is positioned and/or deformed by means of mechanical force action (72) and at least a second optical element (46) from the plurality of optical elements is deformed by means of thermal action (78).
摘要翻译：描述了一种用于改善光学系统（10）以及具有改进的成像特性的这种类型的光学系统（10）的成像特性的方法。光学系统（10）具有多个光学元件。为了至少部分地校正至少一个成像像差，来自多个光学元件的至少第一光学元件（42）通过机械力作用（72）和热作用（76）定位和/或变形，或所述至少第一光学元件（42）通过机械力作用（72）定位和/或变形，并且来自所述多个光学元件的至少第二光学元件（46）通过热作用而变形（ 78）。

10. 发明申请

WO2006125617A3 METHOD FOR IMPROVING THE IMAGING PROPERTIES OF A PROJECTION OBJECTIVE, AND SUCH A PROJECTION OBJECTIVE 审中-公开
标题翻译：改进投影目标成像特性的方法及其投影目标
公开(公告)号：WO2006125617A3
公开(公告)日：2007-04-26
申请号：PCT/EP2006004929
申请日：2006-05-24
申请人： ZEISS CARL SMT AG , CONRADI OLAF , FELDMANN HEIKO , RICHTER GERALD , BLEIDISTEL SASCHA , FROMMEYER ANDREAS , GRUNER TORALF , HUMMEL WOLFGANG
发明人： CONRADI OLAF , FELDMANN HEIKO , RICHTER GERALD , BLEIDISTEL SASCHA , FROMMEYER ANDREAS , GRUNER TORALF , HUMMEL WOLFGANG
IPC分类号： G03F7/20
CPC分类号： G02B27/0068 , G02B3/0081 , G02B26/0825 , G03F7/7015 , G03F7/70266 , G03F7/70558 , Y10S359/90
摘要： The invention relates to a method -for improving the imaging properties of a micro lithography projection objective (50) , wherein the projection objective has a plurality of lenses (Ll, L2, L3 , L4 , L5 , L6, L7, L8) between an object plane and an image plane, a first lens of the plurality of lenses being assigned a first manipulator (ml, Mn) for actively deforming the lens, the first lens being deformed for at least partially correcting an aberration, at least one second lens of the plurality of lenses furthermore being assigned at least one second manipulator, and the second lens being deformed in addition to the first lens. Furthermore, a method is described for selecting at least one lens of a plurality of lenses of a projection objective as actively deformable element, and a projection objective.
摘要翻译：本发明涉及一种用于改善微光刻投影物镜（50）的成像特性的方法，其中投影物镜具有多个透镜（L1，L2，L3，L4，L5，L6，L7，L8）物镜平面和图像平面，多个透镜中的第一透镜被分配用于主动变形透镜的第一操纵器（ml，Mn），第一透镜被变形以至少部分地校正像差，至少一个第二透镜所述多个透镜还被分配至少一个第二操纵器，并且所述第二透镜除了所述第一透镜之外也变形。此外，描述了用于选择投影物镜的多个透镜中的至少一个透镜作为主动变形元件和投影物镜的方法。

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