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1. 发明申请

US20130146834A1 QUANTUM DOT-MATRIX THIN FILM AND METHOD OF PRODUCING THE SAME 审中-公开
标题翻译：量子基矩阵薄膜及其制造方法
公开(公告)号：US20130146834A1
公开(公告)日：2013-06-13
申请号：US13594141
申请日：2012-08-24
申请人： Kyung-sang CHO , Ji-yeon KU , Byoung-lyong CHOI
发明人： Kyung-sang CHO , Ji-yeon KU , Byoung-lyong CHOI
IPC分类号： H01L29/02 , H01L21/20
CPC分类号： H01L21/02521 , B82Y10/00 , H01L21/02601 , H01L21/02628 , H01L29/0665 , H01L29/127
摘要： A quantum dot-matrix thin film and a method of preparing a quantum dot-matrix thin film are provided. The thin film includes quantum dots; an inorganic matrix in which the quantum dots are imbedded; and an interface layer disposed between the quantum dots and the inorganic matrix to surround surfaces of the quantum dots. The method includes preparing a quantum dot solution in which quantum dots with inorganic ligands are dispersed; adding a matrix precursor to the quantum dot solution; coating the quantum dot solution comprising the matrix precursor on a substrate; and annealing the substrate coated with the quantum dot solution.
摘要翻译：提供量子点阵薄膜和制备量子点阵薄膜的方法。薄膜包括量子点; 嵌入量子点的无机基质; 以及设置在量子点和无机基质之间以围绕量子点的表面的界面层。该方法包括制备其中分散有无机配体的量子点的量子点溶液; 向量子点溶液中加入基质前体; 将包含基质前体的量子点溶液涂布在基底上; 并对涂覆有量子点溶液的衬底进行退火。

2. 发明申请

US20110220165A1 THERMOELECTRIC DEVICE INCLUDING THERMOELECTRIC BODY INCLUDING VACANCY CLUSTER 审中-公开
标题翻译：包含真空组件的热电体的热电装置
公开(公告)号：US20110220165A1
公开(公告)日：2011-09-15
申请号：US13044878
申请日：2011-03-10
申请人： Eun-kyung LEE , Byoung-lyong CHOI , Gyeong S. HWANG
发明人： Eun-kyung LEE , Byoung-lyong CHOI , Gyeong S. HWANG
IPC分类号： H01L35/12 , H01L35/34
CPC分类号： H01L35/32 , H01L35/22
摘要： A thermoelectric device includes: a first region; a second region; and a thermoelectric body disposed between the first region and the second region, where the thermoelectric body includes a vacancy.
摘要翻译：热电装置包括：第一区域; 第二区域以及设置在所述第一区域和所述第二区域之间的热电体，其中所述热电体包括空位。

3. 发明授权

US08017952B2 Inorganic electroluminescent diode and method of fabricating the same 有权
标题翻译：无机电致发光二极管及其制造方法
公开(公告)号：US08017952B2
公开(公告)日：2011-09-13
申请号：US11534867
申请日：2006-09-25
申请人： Kyung Sang Cho , Byung Lyong Choi , Byoung Lyong Choi , Soon Jae Kwon
发明人： Kyung Sang Cho , Byung Lyong Choi , Byoung Lyong Choi , Soon Jae Kwon
IPC分类号： H01L27/15
CPC分类号： C09K11/883 , C09K11/565 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/26 , H05B33/14
摘要： Disclosed are an inorganic electroluminescent diode and a method of fabricating the same. Specifically, this invention provides an inorganic electroluminescent diode, which includes a semiconductor nanocrystal layer formed of inorganic material, an electron transport layer or a hole transport layer formed on the semiconductor nanocrystal layer using amorphous inorganic material, and a hole transport layer or an electron transport layer formed beneath the semiconductor nanocrystal layer using inorganic material, and also provides a method of fabricating such an inorganic electroluminescent diode. According to the method of fabricating the inorganic electroluminescent diode of this invention, an inorganic electroluminescent diode can be fabricated while maintaining the properties of luminescent semiconductor material of the semiconductor crystal layer, and also an inorganic electroluminescent diode which is stably operated and has high luminescent efficiency can be provided.
摘要翻译：公开了一种无机电致发光二极管及其制造方法。具体地说，本发明提供了一种无机电致发光二极管，其包括由无机材料形成的半导体纳米晶层，使用无定形无机材料形成在半导体纳米晶层上的电子传输层或空穴传输层，以及空穴传输层或电子传输使用无机材料形成在半导体纳米晶层之下的层，并且还提供制造这种无机电致发光二极管的方法。根据制造本发明的无机电致发光二极管的方法，可以制造无机电致发光二极管，同时保持半导体晶体层的发光半导体材料的性质，以及稳定操作且具有高发光效率的无机电致发光二极管可以提供。

4. 发明申请

US20100208493A1 LIGHT GUIDE PLATE AND DISPLAY APPARATUS COMPRISING THE SAME 有权
标题翻译：光导板和包括它的显示装置
公开(公告)号：US20100208493A1
公开(公告)日：2010-08-19
申请号：US12687290
申请日：2010-01-14
申请人： Byoung-lyong CHOI , Hong-seok LEE , Jong-min KIM , Eun-kyung LEE
发明人： Byoung-lyong CHOI , Hong-seok LEE , Jong-min KIM , Eun-kyung LEE
IPC分类号： F21V7/04 , H01L33/00
CPC分类号： G02B6/0035 , G02B6/0038
摘要： A light guide plate includes a plurality of quantum dots on at least one of a surface of the light guide plate and inside the light guide plate, wherein the plurality of quantum dots emit light having a different wavelength than a light incident thereto.
摘要翻译：导光板在导光板的表面和导光板的至少一个上包括多个量子点，其中多个量子点发射具有与入射到其上的光不同的波长的光。

5. 发明申请

US20100108984A1 QUANTUM DOT ELECTROLUMINESCENT DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：量子电致发光器件及其制造方法
公开(公告)号：US20100108984A1
公开(公告)日：2010-05-06
申请号：US12534226
申请日：2009-08-03
申请人： Kyung Sang CHO , Byoung Lyong CHOI , Eun Kyung LEE
发明人： Kyung Sang CHO , Byoung Lyong CHOI , Eun Kyung LEE
IPC分类号： H01L33/00 , H01L21/28
CPC分类号： H05B33/14 , C09K11/025 , C09K11/565 , C09K11/883 , H01L51/0037 , H01L51/0039 , H01L51/502 , H01L51/5048
摘要： A quantum dot electroluminescent device that includes a substrate, a quantum dot light-emitting layer disposed on the substrate, a first electrode which injects charge carriers into the quantum dot light-emitting layer, a second electrode which injects charge carriers, which have an opposite charge than the charge carriers injected by the first electrode, into the quantum dot light-emitting layer, a hole transport layer disposed between the first electrode and the quantum dot light-emitting layer, and an electron transport layer disposed between the second electrode and the quantum dot light-emitting layer, wherein the quantum dot light-emitting layer has a first surface in contact with the hole transport layer and a second surface in contact with an electron transport layer, and wherein the first surface has an organic ligand distribution that is different from an organic ligand distribution of the second surface.
摘要翻译：一种量子点电致发光器件，包括衬底，设置在衬底上的量子点发光层，将电荷载流子注入量子点发光层的第一电极，注入电荷载流子的第二电极，其具有相反的电荷比由第一电极注入的电荷载流子进入量子点发光层，设置在第一电极和量子点发光层之间的空穴传输层和设置在第二电极和量子点发光层之间的电子传输层量子点发光层，其中量子点发光层具有与空穴传输层接触的第一表面和与电子传输层接触的第二表面，并且其中第一表面具有有机配体分布不同于第二表面的有机配体分布。

6. 发明授权

US07649192B2 Nano wires and method of manufacturing the same 有权
标题翻译：纳米线和制造方法相同
公开(公告)号：US07649192B2
公开(公告)日：2010-01-19
申请号：US11369859
申请日：2006-03-08
申请人： Byoung-lyong Choi , Eun-kyung Lee
发明人： Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： H01L29/06
CPC分类号： B82Y30/00 , C30B11/12 , C30B29/605 , Y10S977/721 , Y10S977/762 , Y10S977/768 , Y10S977/789 , Y10S977/81 , Y10S977/938
摘要： Provided are nano wires and a method of manufacturing the same. The method includes forming microgrooves having a plurality of microcavities, the microgrooves forming a regular pattern on a surface of a silicon substrate; forming a metal layer on the silicon substrate by depositing a material which acts as a catalyst to form nano wires on the silicon substrate; agglomerating the metal layer within the microgrooves on the surface of the silicon substrate by heating the metal layer to form catalysts; and growing the nano wires between the catalysts and the silicon substrate using a thermal process.
摘要翻译：提供纳米线及其制造方法。该方法包括形成具有多个微腔的微槽，微槽在硅衬底的表面上形成规则图案; 通过沉积作为催化剂的材料在硅衬底上形成纳米线，在硅衬底上形成金属层; 通过加热金属层以形成催化剂，将硅衬底表面上的微槽内的金属层凝集成形成催化剂; 并使用热处理在催化剂和硅衬底之间生长纳米线。

7. 发明授权

US07625812B2 Silicon nano wires, semiconductor device including the same, and method of manufacturing the silicon nano wires 有权
标题翻译：硅纳米线，包括其的半导体器件以及硅纳米线的制造方法
公开(公告)号：US07625812B2
公开(公告)日：2009-12-01
申请号：US11362897
申请日：2006-02-27
申请人： Byoung-lyong Choi , Wan-jun Park , Eun-kyung Lee , Jao-woong Hyun
发明人： Byoung-lyong Choi , Wan-jun Park , Eun-kyung Lee , Jao-woong Hyun
IPC分类号： H01L21/38
CPC分类号： B82Y10/00 , H01L21/02381 , H01L21/02532 , H01L21/02603 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/861
摘要： A method of manufacturing silicon nano wires including forming microgrooves on a surface of a silicon substrate, forming a first doping layer doped with a first dopant on the silicon substrate and forming a second doping layer doped with a second dopant between the first doping layer and a surface of the silicon substrate, forming a metal layer on the silicon substrate, forming catalysts by heating the metal layer within the microgrooves of the silicon substrate and growing the nano wires between the catalysts and the silicon substrate using a thermal process.
摘要翻译：一种制造硅纳米线的方法，包括在硅衬底的表面上形成微槽，在硅衬底上形成掺杂有第一掺杂剂的第一掺杂层，并在第一掺杂层和第一掺杂层之间形成掺杂有第二掺杂剂的第二掺杂层在硅衬底上形成金属层，通过加热硅衬底的微槽内的金属层并使用热处理在催化剂和硅衬底之间生长纳米线，形成催化剂。

8. 发明授权

US07537956B2 Silicon optoelectronic device manufacturing method and silicon optoelectronic device manufactured by thereof and image input and/or output apparatus having the same 有权
标题翻译：硅光电器件制造方法和由其制造的硅光电子器件以及具有该硅光电子器件的方法和图像输入和/或输出设备
公开(公告)号：US07537956B2
公开(公告)日：2009-05-26
申请号：US11285192
申请日：2005-11-23
申请人： In-jae Song , Byoung-lyong Choi
发明人： In-jae Song , Byoung-lyong Choi
IPC分类号： H01L21/00
CPC分类号： H01L33/0058 , H01L27/14601 , H01L27/14645 , H01L27/14689 , H01L27/14698 , H01L27/156 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method and an image input and/or output apparatus having the silicon optoelectronic device are provided. The method includes: preparing an n-type or a p-type silicon-based substrate; forming a polysilicon having a predetermined depth at one or more predetermined regions of a surface of the substrate in order to form a microdefect flection pattern having a desired microcavity length; oxidizing the surface of the substrate where the polysilicon is formed for forming a silicon oxidation layer on the substrate and forming a microdefect flection pattern having a desired microcavity length at an interface between the substrate and the silicon oxidation layer, wherein the microdefect flection pattern is formed by a difference between an oxidation rate of the polysilicon and an oxidation rate of a material of the substrate during formation of the silicon oxidation layer; exposing the microdefect flection pattern by etching a region of the silicon oxidation layer where the polysilicon is formed; and forming a doping region by doping the exposed microdefect flection pattern in a type opposite to a type of the substrate.
摘要翻译：提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件和具有硅光电子器件的图像输入和/或输出装置。该方法包括：制备n型或p型硅基衬底; 在所述基板的表面的一个或多个预定区域处形成具有预定深度的多晶硅，以便形成具有期望的微腔长度的微缺陷弯曲图案; 氧化形成多晶硅的衬底的表面，以在衬底上形成硅氧化层，并在衬底和硅氧化层之间的界面处形成具有期望的微腔长度的微缺陷弯曲图案，其中形成微缺陷弯曲图案通过在形成硅氧化层期间多晶硅的氧化速率与衬底的材料的氧化速率之间的差异; 通过蚀刻形成多晶硅的硅氧化层的区域来暴露微缺陷弯曲图案; 以及通过以与衬底类型相反的类型掺杂暴露的微缺陷弯曲图案来形成掺杂区域。

9. 发明申请

US20090008664A1 NANOWIRE LIGHT EMITTING DEVICE 有权
标题翻译： NANOWIRE发光装置
公开(公告)号：US20090008664A1
公开(公告)日：2009-01-08
申请号：US12040686
申请日：2008-02-29
申请人： Young-gu Jin , Sung-hoon Lee , Hyo-sug Lee , Byoung-lyong Choi , Jong-seob Kim
发明人： Young-gu Jin , Sung-hoon Lee , Hyo-sug Lee , Byoung-lyong Choi , Jong-seob Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , B82Y10/00 , H01L33/06 , H01L33/18 , Y10S977/762
摘要： A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.
摘要翻译：提供了一种纳米线发光器件。纳米线发光器件包括衬底，形成在衬底上的第一导电层，垂直形成在第一导电层上的多个纳米线，每个纳米线包括p掺杂部分和n掺杂部分， p掺杂部分和n掺杂部分，形成在纳米线上的第二导电层和其中嵌入发光材料的绝缘聚合物，填充纳米线之间的空间。从发光层发出的光的颜色根据发光材料而变化。

10. 发明申请

US20090008628A1 LIGHT-EMITTING DEVICE AND LIGHT-RECEIVING DEVICE USING TRANSISTOR STRUCTURE 有权
标题翻译：使用晶体管结构的发光器件和光接收器件
公开(公告)号：US20090008628A1
公开(公告)日：2009-01-08
申请号：US12031287
申请日：2008-02-14
申请人： Byoung Lyong CHOI , Kyung Sang CHO , Eun Kyung LEE , O Gweon SEO
发明人： Byoung Lyong CHOI , Kyung Sang CHO , Eun Kyung LEE , O Gweon SEO
IPC分类号： H01L33/00 , H01L29/08 , H01L29/06
CPC分类号： H01L51/5296 , B82Y20/00 , H01L51/0545 , H01L51/5012 , H01L51/5203
摘要： Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction parallel to these electrodes. In the light-emitting device using the transistor structure, it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region through the control of the magnitude of voltage applied to the gate electrode, thus increasing the lifespan of the light-emitting device, facilitating the manufacturing process thereof, and realizing light-emitting or light-receiving properties having high efficiency and high purity.
摘要翻译：公开了一种使用晶体管结构的发光装置，其包括基板，第一栅电极，第一绝缘层，源电极，漏电极和形成在源电极和漏电极之间的发光层，与这些电极平行的方向。在使用晶体管结构的发光装置中，可以通过控制施加到栅电极的电压的大小来调节电子或空穴的迁移率并选择性地设置发光区域，从而增加寿命发光装置，便于其制造工艺，并实现高效率和高纯度的发光或光接收性能。

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