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    • 6. 发明授权
    • Constant voltage output generator with proportional feedback and control method of the same
    • 恒压输出发生器具有比例反馈和控制方式相同
    • US08598947B2
    • 2013-12-03
    • US13085546
    • 2011-04-13
    • Jong-min Kim
    • Jong-min Kim
    • G05F1/575
    • G05F1/575
    • An electric device and a control method of the same, the electric device including a load terminal, a constant voltage output unit to generate an output voltage to the load terminal, a feedback circuit having a plurality of feedback circuit elements to generate a feedback signal to the constant voltage output unit to adjust the output voltage, and a controller to set a power mode of the electric device and to generate a control signal according to an enable signal and the set power mode such that the control signal corresponds to one or more of the feedback circuit elements to adjust the feedback signal, wherein the enable signal corresponds to a level of the output voltage.
    • 一种电气装置及其控制方法,所述电气装置包括负载端子,向所述负载端子产生输出电压的恒压输出单元,具有多个反馈电路元件的反馈电路,以产生反馈信号, 所述恒压输出单元用于调节所述输出电压,以及控制器,用于设置所述电气设备的功率模式,并根据使能信号和所述设定功率模式产生控制信号,使得所述控制信号对应于 反馈电路元件来调整反馈信号,其中使能信号对应于输出电压的电平。
    • 9. 发明申请
    • BIPOLAR JUNCTION TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    • 双极接头晶体管及其制造方法
    • US20130049169A1
    • 2013-02-28
    • US13345966
    • 2012-01-09
    • JAE HYUN YOOJong Min Kim
    • JAE HYUN YOOJong Min Kim
    • H01L29/73H01L21/331
    • H01L29/735H01L29/0821H01L29/1008
    • A bipolar junction transistor includes a first trench element isolation film, a second trench element isolation film, a first base region, a second base region, a collector region, a first well, a second well, an emitter, a collector, and bases. The second well is formed by implanting an n-type impurity into the semiconductor substrate, and the emitter is formed by implanting the n-type impurity into the emitter region between the first trench element isolation film and the second well. The collector is formed by implanting the n-type impurity into the collector region between the first well and the second trench element isolation film, and the bases are formed by implanting the p-type impurity into the first base region and into the second base region between the emitter region and the second well.
    • 双极结型晶体管包括第一沟槽元件隔离膜,第二沟槽元件隔离膜,第一基极区,第二基极区,集电极区,第一阱,第二阱,发射极,集电极和基极。 通过将n型杂质注入到半导体衬底中而形成第二阱,并且通过将n型杂质注入到第一沟槽元件隔离膜和第二阱之间的发射极区域中来形成发射极。 集电体通过将n型杂质注入第一阱和第二沟槽元件隔离膜之间的集电极区域而形成,并且通过将p型杂质注入第一基极区域并进入第二基极区域而形成基极 在发射极区域和第二阱之间。
    • 10. 发明授权
    • 2D/3D switchable integral imaging systems
    • 2D / 3D可切换积分成像系统
    • US08319902B2
    • 2012-11-27
    • US12654701
    • 2009-12-29
    • Sun-il KimJong-min Kim
    • Sun-il KimJong-min Kim
    • G02F1/1335
    • G02F1/29G02B3/14G02B26/004G02F1/1323G02F1/13439G02F2001/294G02F2202/36H04N13/305H04N13/359
    • An integral imaging system may include a lens unit. The lens unit may include a first substrate; a second substrate; a first electrode on the first substrate; a second electrode on the second substrate; a liquid crystal layer between the first and second substrates; and an array of nanostructures protruding from the first substrate into the liquid crystal layer. The first and second electrodes may be configured to apply one or more voltages to the array of nanostructures. When the one or more voltages are applied to the array of nanostructures, one or more electric fields may be formed between the array of nanostructures and the second electrode, varying an arrangement of molecules in the liquid crystal layer and forming a refractive index distribution in the liquid crystal layer.
    • 整体成像系统可以包括透镜单元。 透镜单元可以包括第一基板; 第二基板; 第一基板上的第一电极; 第二基板上的第二电极; 第一和第二基板之间的液晶层; 以及从第一基板突出到液晶层的纳米结构的阵列。 第一和第二电极可以被配置为向纳米结构阵列施加一个或多个电压。 当将一个或多个电压施加到纳米结构阵列时,可以在纳米结构阵列和第二电极之间形成一个或多个电场,改变液晶层中分子的排列并在其中形成折射率分布 液晶层。