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1. 发明授权

US06685772B2 De novo processing of electronic materials 失效
标题翻译：从头处理电子材料
公开(公告)号：US06685772B2
公开(公告)日：2004-02-03
申请号：US10113919
申请日：2002-03-28
申请人： William A. Goddard, III , Gyeong S. Hwang
发明人： William A. Goddard, III , Gyeong S. Hwang
IPC分类号： C30B110
CPC分类号： G06F17/5018
摘要： Computer programs and computer-implemented methods for predicting from first principles the behavior of dopants and defects in the processing of electronic materials. The distribution of dopant and defect components in a substrate lattice is predicted based on external conditions and fundamental data for a set of microscopic processes that can occur during material processing operations. The concentration behavior of one or more fast components is calculated in two stages, by solving a first relationship for a time period before the fast component reaches a pseudo steady state at which the concentration of the fast component is determined by concentrations of one or more second components, and by solving a second relationship for a time period after the first component reaches the pseudo steady state. Application of these methods to modeling ultrashallow junction processing is also described.
摘要翻译：计算机程序和计算机实现的方法，用于从第一原理预测掺杂剂的行为和电子材料加工中的缺陷。掺杂剂和缺陷组分在衬底晶格中的分布是基于在材料加工操作期间可能发生的一组微观工艺的外部条件和基本数据来预测的。一个或多个快速组分的浓度行为通过在快速组分达到假稳定状态之前的时间段内求解第一关系来计算两个阶段，其中快速组分的浓度由一个或多个第二个浓度确定并且通过在第一分量达到伪稳定状态之后的时间段内求解第二关系。还描述了这些方法对超浅接合处理建模的应用。

2. 发明授权

US07756687B2 Method for predicting contributions of silicon interstitials to n-type dopant transient enhanced diffusion during a pn junction formation 有权
标题翻译：在pn结形成期间预测硅间隙对n型掺杂剂瞬态增强扩散的贡献的方法
公开(公告)号：US07756687B2
公开(公告)日：2010-07-13
申请号：US11536740
申请日：2006-09-29
申请人： Gyeong S. Hwang , Scott A. Harrison
发明人： Gyeong S. Hwang , Scott A. Harrison
IPC分类号： G06F17/50 , H01L21/67
CPC分类号： G06F17/5018 , G06F2217/10 , G06F2217/80
摘要： A method for predicting the contribution of silicon interstitials to n-type dopant transient enhanced diffusion during a pn junction formation is disclosed. Initially, fundamental data for a set of microscopic processes that can occur during one or more material processing operations are obtained. The fundamental data are then utilized to build kinetic models for a set of reactions that contribute substantially to an evolution of n-type dopant concentration and electrical activities. The kinetic models are subsequently applied to a simulator to predict temporal and spatial evolutions of concentration and electrical activity profiles of the n-type dopants.
摘要翻译：公开了一种用于在pn结形成期间预测硅间隙对n型掺杂剂瞬态增强扩散的贡献的方法。最初，获得可在一个或多个材料加工操作期间发生的一组微观工艺的基础数据。然后利用基本数据建立一组反应的动力学模型，这些反应基本上有助于n型掺杂剂浓度和电活动的演变。随后将动力学模型应用于模拟器以预测n型掺杂剂的浓度和电活动谱的时间和空间演变。

3. 发明授权

US08036864B2 Method for predicting the formation of silicon nanocrystals in embedded oxide matrices 有权
标题翻译：预测嵌入氧化物基质中硅纳米晶体形成的方法
公开(公告)号：US08036864B2
公开(公告)日：2011-10-11
申请号：US11537423
申请日：2006-09-29
申请人： Gyeong S. Hwang , Decai Yu
发明人： Gyeong S. Hwang , Decai Yu
IPC分类号： G06G7/48
CPC分类号： G06F17/5018 , G06F2217/10 , G06F2217/80
摘要： A method for predicting the formation of silicon nanocrystals in an oxide matrix is disclosed. Initially, fundamental data for a set of microscopic processes that can occur during one or more material processing operations are obtained. Kinetic models are then built by utilizing the fundamental data for a set of reactions that can contribute substantially to the formation of silicon nanocrystals in a silicon oxide matrix. Finally, the kinetic models are applied to predict shape, size distribution, spatial arrangements of silicon nanocrystals.
摘要翻译：公开了一种用于预测氧化物基质中硅纳米晶体的形成的方法。最初，获得可在一个或多个材料加工操作期间发生的一组微观工艺的基础数据。然后通过利用可以有助于在氧化硅基质中形成硅纳米晶体的一组反应的基础数据来构建动力学模型。最后，应用动力学模型预测硅纳米晶体的形状，尺寸分布，空间排列。

4. 发明授权

US07074270B2 Method for predicting the behavior of dopant and defect components 失效
标题翻译：用于预测掺杂剂和缺陷组分的行为的方法
公开(公告)号：US07074270B2
公开(公告)日：2006-07-11
申请号：US10406033
申请日：2003-04-02
申请人： Yuzuru Sato , Masamitsu Uehara , Gyeong S. Hwang , William A. Goddard, III
发明人： Yuzuru Sato , Masamitsu Uehara , Gyeong S. Hwang , William A. Goddard, III
IPC分类号： C30B1/00
CPC分类号： H01L21/26513 , G06F17/5018 , G06F2217/10 , H01L21/26566 , H01L21/2658
摘要： Techniques for predicting the behavior of dopant and defect components in a substrate lattice formed from a substrate material can be implemented in hardware or software. Fundamental data for a set of microscopic processes that can occur during one or more material processing operations is obtained. Such data can include data representing the kinetics of processes in the set of microscopic processes and the energetics and structure of possible states in the material processing operations. From the fundamental data and a set of external conditions, distributions of dopant and defect components in the substrate lattice are predicted. The distributions of one or more fast components are each predicted by calculating the concentration of the particular fast component for a time period before that fast component reaches its pseudo steady state by solving a first relationship and calculating the concentration of that fast component after the time period by solving a second relationship based on other components, the pseudo steady state of a fast component being a state in which the concentration of that fast component is determined by concentrations of other components. The distribution of Bs3Bi, in addition to the distributions of Bs, BsI, BsI2, BsI3, BsBi, BsBi2, BsBi3, BsBiI, BsBiI2, Bs2Bi, Bs2Bi2, I and In, are calculated by solving the first relationship to predict the distribution of boron after annealing, where Bs and Bi represent substitutional boron and interstitial boron, respectively, and I and In represent interstitial silicon and a cluster of n I's, respectively.
摘要翻译：用于预测由衬底材料形成的衬底晶格中的掺杂剂和缺陷组分的行为的技术可以在硬件或软件中实现。获得可在一个或多个材料加工操作期间发生的一组微观工艺的基本数据。这样的数据可以包括表示微观过程集合中的过程的动力学的数据，以及材料处理操作中可能状态的能量学和结构。从基础数据和一组外部条件，预测衬底晶格中的掺杂剂和缺陷组分的分布。一个或多个快速分量的分布各自通过在该快速分量达到其伪稳态之前的时间段内计算特定快速分量的浓度来求解第一关系并计算该时间段之后该快分量的浓度通过解决基于其他成分的第二关系，快速成分的伪稳定状态是通过其他成分的浓度来确定该快速成分的浓度的状态。除了Bs，BsI，BsI2，BsI3，BsBi，BsBi，BsBi，BsBi， 2，BsBi 3，BsBiI，BsBi1 2，Bs2 Bi，Bs2 Bi，通过求解第一关系来计算退火后硼的分布，其中Bs和Bi分别代表取代硼和间隙硼，并且 I和I分别表示间隙硅和n I的簇。

5. 发明申请

US20110220165A1 THERMOELECTRIC DEVICE INCLUDING THERMOELECTRIC BODY INCLUDING VACANCY CLUSTER 审中-公开
标题翻译：包含真空组件的热电体的热电装置
公开(公告)号：US20110220165A1
公开(公告)日：2011-09-15
申请号：US13044878
申请日：2011-03-10
申请人： Eun-kyung LEE , Byoung-lyong CHOI , Gyeong S. HWANG
发明人： Eun-kyung LEE , Byoung-lyong CHOI , Gyeong S. HWANG
IPC分类号： H01L35/12 , H01L35/34
CPC分类号： H01L35/32 , H01L35/22
摘要： A thermoelectric device includes: a first region; a second region; and a thermoelectric body disposed between the first region and the second region, where the thermoelectric body includes a vacancy.
摘要翻译：热电装置包括：第一区域; 第二区域以及设置在所述第一区域和所述第二区域之间的热电体，其中所述热电体包括空位。

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