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1. 发明申请

US20120192792A1 PLASMA, UV AND ION/NEUTRAL ASSISTED ALD OR CVD IN A BATCH TOOL 审中-公开
标题翻译：等离子体，紫外线和离子/中性辅助ALD或CVD在批量工具中
公开(公告)号：US20120192792A1
公开(公告)日：2012-08-02
申请号：US13445354
申请日：2012-04-12
申请人： MAITREYEE MAHAJANI , Joseph Yudovsky , Brendan McDougall
发明人： MAITREYEE MAHAJANI , Joseph Yudovsky , Brendan McDougall
IPC分类号： C23C16/458 , C23C16/50
CPC分类号： H01J37/32009 , C23C16/45508 , C23C16/45574 , C23C16/4583 , C23C16/46 , C23C16/509
摘要： CVD and ALD methods of using a batch processing chamber to process substrates are described. A batch processing chamber includes a chamber housing, a substrate boat for containing a batch of substrates in a process region, and an excitation assembly for exciting species of a processing gas. The excitation assembly is positioned within the chamber housing and may include plasma, UV, or ion assistance.
摘要翻译：描述了使用批处理室来处理衬底的CVD和ALD方法。批处理室包括：室壳体，用于在处理区域中容纳一批衬底的衬底舟和用于激发加工气体种类的激发组件。激发组件定位在腔室内，并且可以包括等离子体，UV或离子辅助。

2. 发明授权

US07921803B2 Chamber components with increased pyrometry visibility 有权
标题翻译：室内组件具有更高的高温可见度
公开(公告)号：US07921803B2
公开(公告)日：2011-04-12
申请号：US11859080
申请日：2007-09-21
申请人： Joseph Yudovsky , Brendan McDougall , Ravi Jallepally , Yi-Chiau Huang , Maitreyee Mahajani , Kevin Griffin , Andrew C. Sherman
发明人： Joseph Yudovsky , Brendan McDougall , Ravi Jallepally , Yi-Chiau Huang , Maitreyee Mahajani , Kevin Griffin , Andrew C. Sherman
IPC分类号： B05C11/00
CPC分类号： H01L21/67248
摘要： The present invention generally provides method and apparatus for non-contact temperature measurement in a semiconductor processing chamber. Particularly, the present invention provides methods and apparatus for non-contact temperature measurement for temperature below 500° C. One embodiment of the present invention provides an apparatus for processing semiconductor substrates. The apparatus comprises a target component comprises a material with higher emissivity than the one or more substrates.
摘要翻译：本发明通常提供了半导体处理室中非接触式温度测量的方法和装置。特别地，本发明提供了在低于500℃的温度下进行非接触式温度测量的方法和装置。本发明的一个实施例提供了一种半导体衬底的处理装置。该装置包括目标部件，其包括比一个或多个基板更高的发射率的材料。

3. 发明授权

US07781016B2 Method for measuring precursor amounts in bubbler sources 有权
标题翻译：用于测量起泡器源中前体量的方法
公开(公告)号：US07781016B2
公开(公告)日：2010-08-24
申请号：US11508375
申请日：2006-08-23
申请人： Ronald Stevens , Brendan McDougall , Jacob W. Smith , Garry Kwong , Sandeep Nijhawan , Lori D. Washington
发明人： Ronald Stevens , Brendan McDougall , Jacob W. Smith , Garry Kwong , Sandeep Nijhawan , Lori D. Washington
IPC分类号： C23C16/00
CPC分类号： C23C16/4482
摘要： Methods are disclosed of determining a fill level of a precursor in a bubbler. The bubbler is fluidicly coupled with a substrate processing chamber through a vapor-delivery system. The bubbler and vapor-delivery system are backfilled with a known dose of a backfill gas. A pressure and temperature of the backfill gas are determined, permitting a total volume for the backfill gas in the bubbler and vapor-delivery system to be determined by application of a gas law. The fill level of the precursor in the bubbler is determined as a difference between (1) a total volume of the bubbler and vapor-delivery system and (2) the determined total volume for the backfill gas.
摘要翻译：公开了确定起泡器中前体的填充水平的方法。起泡器通过蒸气输送系统与基底处理室流体耦合。起泡器和蒸气输送系统用已知剂量的回填气体回填。确定回填气体的压力和温度，允许通过应用气体定律确定起泡器和蒸气输送系统中回填气体的总体积。起泡器中前体的填充水平被确定为（1）起泡器和蒸气输送系统的总体积和（2）确定的回填气体的总体积之间的差。

4. 发明申请

US20090078198A1 CHAMBER COMPONENTS WITH INCREASED PYROMETRY VISIBILITY 有权
标题翻译：具有增加色素可见性的CHAMBER组件
公开(公告)号：US20090078198A1
公开(公告)日：2009-03-26
申请号：US11859080
申请日：2007-09-21
申请人： JOSEPH YUDOVSKY , Brendan McDougall , Ravi Jallepally , Yi-Chiau Huang , Maitreyee Mahajani , Kevin Griffin , Andrew C. Sherman
发明人： JOSEPH YUDOVSKY , Brendan McDougall , Ravi Jallepally , Yi-Chiau Huang , Maitreyee Mahajani , Kevin Griffin , Andrew C. Sherman
IPC分类号： B05C21/00 , H01L21/66
CPC分类号： H01L21/67248
摘要： The present invention generally provides method and apparatus for non-contact temperature measurement in a semiconductor processing chamber. Particularly, the present invention provides methods and apparatus for non-contact temperature measurement for temperature below 500° C. One embodiment of the present invention provides an apparatus for processing semiconductor substrates. The apparatus comprises a target component comprises a material with higher emissivity than the one or more substrates.
摘要翻译：本发明通常提供了半导体处理室中非接触式温度测量的方法和装置。特别地，本发明提供了在低于500℃的温度下进行非接触式温度测量的方法和装置。本发明的一个实施例提供了一种半导体衬底的处理装置。该装置包括目标部件，其包括比一个或多个基板更高的发射率的材料。

5. 发明申请

US20070259111A1 METHOD AND APPARATUS FOR PHOTO-EXCITATION OF CHEMICALS FOR ATOMIC LAYER DEPOSITION OF DIELECTRIC FILM 审中-公开
标题翻译：用于电子薄膜原子层沉积的化学品的激光的方法和装置
公开(公告)号：US20070259111A1
公开(公告)日：2007-11-08
申请号：US11464121
申请日：2006-08-11
申请人： Kaushal K. Singh , Maitreyee Mahajani , Steve G. Ghanayem , Joseph Yudovsky , Brendan McDougall
发明人： Kaushal K. Singh , Maitreyee Mahajani , Steve G. Ghanayem , Joseph Yudovsky , Brendan McDougall
IPC分类号： C23C16/00
CPC分类号： H01J37/32009 , C23C16/0209 , C23C16/0245 , C23C16/045 , C23C16/34 , C23C16/403 , C23C16/405 , C23C16/4405 , C23C16/45504 , C23C16/45508 , C23C16/45574 , C23C16/45591 , C23C16/4583 , C23C16/46 , C23C16/482 , C23C16/509
摘要： The invention generally provides a method for depositing materials, and more particularly, embodiments of the invention relate to chemical vapor deposition processes and atomic layer deposition processes utilizing photoexcitation techniques to deposit barrier layers, seed layers, conductive materials, and dielectric materials. Embodiments of the invention generally provide methods of the assisted processes and apparatuses, in which the assisted processes may be conducted for providing uniformly deposited material.
摘要翻译：本发明通常提供一种用于沉积材料的方法，更具体地说，本发明的实施方案涉及利用光激发技术沉积阻挡层，种子层，导电材料和电介质材料的化学气相沉积方法和原子层沉积方法。本发明的实施方案通常提供了辅助方法和装置的方法，其中可以进行辅助过程以提供均匀沉积的材料。

6. 发明申请

US20070259110A1 PLASMA, UV AND ION/NEUTRAL ASSISTED ALD OR CVD IN A BATCH TOOL 有权
标题翻译：等离子体，紫外线和离子/中性辅助ALD或CVD在批量工具中
公开(公告)号：US20070259110A1
公开(公告)日：2007-11-08
申请号：US11381970
申请日：2006-05-05
申请人： Maitreyee Mahajani , Joseph Yudovsky , Brendan McDougall
发明人： Maitreyee Mahajani , Joseph Yudovsky , Brendan McDougall
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： H01J37/32009 , C23C16/45508 , C23C16/45574 , C23C16/4583 , C23C16/46 , C23C16/509
摘要： A batch processing chamber includes a chamber housing, a substrate boat for containing a batch of substrates in a process region, and an excitation assembly for exciting species of a processing gas. The excitation assembly is positioned within the chamber housing and may include plasma, UV, or ion assistance.
摘要翻译：批处理室包括：室壳体，用于在处理区域中容纳一批衬底的衬底舟和用于激发加工气体种类的激发组件。激发组件定位在腔室内，并且可以包括等离子体，UV或离子辅助。

7. 发明申请

US20070065578A1 Treatment processes for a batch ALD reactor 审中-公开
标题翻译：批量ALD反应器的处理工艺
公开(公告)号：US20070065578A1
公开(公告)日：2007-03-22
申请号：US11232455
申请日：2005-09-21
申请人： Brendan McDougall
发明人： Brendan McDougall
IPC分类号： C23C16/00
CPC分类号： C23C16/45546 , C23C16/4404 , C23C16/4408 , C23C16/45527
摘要： Embodiments of the invention provide treatment processes to reduce substrate contamination during a fabrication process within a vapor deposition chamber. A treatment process may be conducted before, during or after a vapor deposition process, such as an atomic layer deposition (ALD) process. In one example of an ALD process, a process cycle, containing an intermediate treatment step and a predetermined number of ALD cycles, is repeated until the deposited material has a desired thickness. The chamber and substrates may be exposed to an inert gas, an oxidizing gas, a nitriding gas, a reducing gas or plasmas thereof during the treatment processes. In some examples, the treatment gas contains ozone, water, ammonia, nitrogen, argon or hydrogen. In one example, a process for depositing a hafnium oxide material within a batch process chamber includes a pretreatment step, an intermediate step during an ALD process and a post-treatment step.
摘要翻译：本发明的实施例提供了在气相沉积室内的制造过程中减少基底污染的处理过程。处理过程可以在诸如原子层沉积（ALD）工艺的气相沉积工艺之前，期间或之后进行。在ALD过程的一个实例中，重复包含中间处理步骤和预定数量的ALD循环的处理循环，直到沉积材料具有期望的厚度。在处理过程中，室和衬底可以暴露于惰性气体，氧化气体，氮化气体，还原气体或等离子体中。在一些实例中，处理气体含有臭氧，水，氨，氮，氩或氢。在一个实例中，用于在间歇处理室内沉积氧化铪材料的方法包括预处理步骤，ALD工艺期间的中间步骤和后处理步骤。

8. 发明授权

US07897208B2 Low temperature ALD SiO2 有权
标题翻译：低温ALD SiO2
公开(公告)号：US07897208B2
公开(公告)日：2011-03-01
申请号：US12788131
申请日：2010-05-26
申请人： Maitreyee Mahajani , Yi-Chiau Huang , Brendan McDougall
发明人： Maitreyee Mahajani , Yi-Chiau Huang , Brendan McDougall
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/402 , C23C16/45534
摘要： The present invention generally comprises a silicon dioxide atomic layer deposition method. By providing pyridine as a catalyst, water may be utilized as the oxidization source while depositing at a low temperature. Prior to exposing the substrate to the water, the substrate may be exposed to a pyridine soak process. Additionally, the water may be co-flowed to the chamber with the pyridine through separate conduits to reduce interaction prior to entering the chamber. Alternatively, the pyridine may be co-flowed with a silicon precursor that does not react with pyridine.
摘要翻译：本发明通常包括二氧化硅原子层沉积方法。通过提供吡啶作为催化剂，可以在低温下沉积时使用水作为氧化源。在将基底暴露于水之前，可以将底物暴露于吡啶浸泡过程。此外，水可以通过单独的导管与吡啶共同流到室中，以减少进入室之前的相互作用。或者，吡啶可以与不与吡啶反应的硅前体共流。

9. 发明授权

US07749574B2 Low temperature ALD SiO2 失效
标题翻译：低温ALD SiO2
公开(公告)号：US07749574B2
公开(公告)日：2010-07-06
申请号：US11559491
申请日：2006-11-14
申请人： Maitreyee Mahajani , Yi-Chiau Huang , Brendan McDougall
发明人： Maitreyee Mahajani , Yi-Chiau Huang , Brendan McDougall
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/402 , C23C16/45534
摘要： The present invention generally comprises a silicon dioxide atomic layer deposition method. By providing pyridine as a catalyst, water may be utilized as the oxidization source while depositing at a low temperature. Prior to exposing the substrate to the water, the substrate may be exposed to a pyridine soak process. Additionally, the water may be co-flowed to the chamber with the pyridine through separate conduits to reduce interaction prior to entering the chamber. Alternatively, the pyridine may be co-flowed with a silicon precursor that does not react with pyridine.
摘要翻译：本发明通常包括二氧化硅原子层沉积方法。通过提供吡啶作为催化剂，可以在低温下沉积时使用水作为氧化源。在将基底暴露于水之前，可以将底物暴露于吡啶浸泡过程。此外，水可以通过单独的导管与吡啶共同流到室中，以减少进入室之前的相互作用。或者，吡啶可以与不与吡啶反应的硅前体共流。

10. 发明申请

US20080113097A1 LOW TEMPERATURE ALD SiO2 失效
标题翻译：低温ALD SiO2
公开(公告)号：US20080113097A1
公开(公告)日：2008-05-15
申请号：US11559491
申请日：2006-11-14
申请人： Maitreyee Mahajani , Yi-Chiau Huang , Brendan McDougall
发明人： Maitreyee Mahajani , Yi-Chiau Huang , Brendan McDougall
IPC分类号： C23C16/40
CPC分类号： C23C16/402 , C23C16/45534
摘要： The present invention generally comprises a silicon dioxide atomic layer deposition method. By providing pyridine as a catalyst, water may be utilized as the oxidization source while depositing at a low temperature. Prior to exposing the substrate to the water, the substrate may be exposed to a pyridine soak process. Additionally, the water may be co-flowed to the chamber with the pyridine through separate conduits to reduce interaction prior to entering the chamber. Alternatively, the pyridine may be co-flowed with a silicon precursor that does not react with pyridine.
摘要翻译：本发明通常包括二氧化硅原子层沉积方法。通过提供吡啶作为催化剂，可以在低温下沉积时使用水作为氧化源。在将基底暴露于水之前，可以将底物暴露于吡啶浸泡过程。此外，水可以通过单独的导管与吡啶共同流到室中，以减少进入室之前的相互作用。或者，吡啶可以与不与吡啶反应的硅前体共流。

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