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1. 发明申请

US20070020923A1 ALD formed titanium nitride films 有权
标题翻译： ALD形成氮化钛膜
公开(公告)号：US20070020923A1
公开(公告)日：2007-01-25
申请号：US11185423
申请日：2005-07-20
申请人： Brenda Kraus , Eugene Marsh
发明人： Brenda Kraus , Eugene Marsh
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45534 , H01L21/02186 , H01L21/0228 , H01L21/28061 , H01L21/3141 , H01L21/76843 , H01L21/76846 , H01L28/75 , H01L29/4941 , Y10S257/915
摘要： The use of atomic layer deposition (ALD) to form a conductive titanium nitride layer produces a reliable structure for use in a variety of electronic devices. The structure is formed by depositing titanium nitride by atomic layer deposition onto a substrate surface using a titanium-containing precursor chemical such as TDEAT, followed by a mixture of ammonia and carbon monoxide or carbon monoxide alone, and repeating to form a sequentially deposited TiN structure. Such a TiN layer may be used as a diffusion barrier underneath another conductor such as aluminum or copper, or as an electro-migration preventing layer on top of an aluminum conductor. ALD deposited TiN layers have low resistivity, smooth topology, high deposition rates, and excellent step coverage and electrical continuity.
摘要翻译：使用原子层沉积（ALD）形成导电氮化钛层产生用于各种电子器件的可靠结构。该结构通过使用含钛前体化学品如TDEAT将原子层沉积氮化钛沉积到衬底表面上，然后将氨和一氧化碳或一氧化碳的混合物单独沉积并重复形成依次沉积的TiN结构。这样的TiN层可以用作另一种导体如铝或铜之下的扩散阻挡层，或者作为铝导体顶部的防电迁移层。 ALD沉积的TiN层具有低电阻率，平滑的拓扑结构，高沉积速率和优异的阶梯覆盖和电连续性。

2. 发明申请

US20060263523A1 Atomic layer deposition methods of forming conductive metal nitride-comprising layers 有权
标题翻译：形成导电金属氮化物层的原子层沉积方法
公开(公告)号：US20060263523A1
公开(公告)日：2006-11-23
申请号：US11497692
申请日：2006-07-31
申请人： Brenda Kraus , Eugene Marsh
发明人： Brenda Kraus , Eugene Marsh
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/45542 , C23C16/34
摘要： This invention includes atomic layer deposition methods of forming conductive metal nitride comprising layers. In one implementation, an atomic layer deposition method of forming a conductive metal nitride comprising layer includes positioning a substrate within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate from a gaseous first precursor comprising at least one of an amido metal organic compound or an imido metal organic compound. The first species monolayer comprises organic groups. The chemisorbed first species is contacted with a second precursor plasma effective to react with the first species monolayer to remove organic groups from the first species monolayer. The chemisorbing and contacting are successively repeated under conditions effective to form a layer of material on the substrate comprising a conductive metal nitride.
摘要翻译：本发明包括形成包含层的导电金属氮化物的原子层沉积方法。在一个实施方案中，形成导电金属氮化物包括层的原子层沉积方法包括将衬底定位在沉积室内。化学吸附第一物质以从包含酰氨基金属有机化合物或亚氨基金属有机化合物中的至少一种的气态第一前体在基底上形成第一物质单层。第一种物质单层包括有机基团。化学吸附的第一物质与第二前体血浆接触，其有效地与第一物质单层反应以从第一物质单层除去有机基团。在有效地在包含导电金属氮化物的衬底上形成材料层的条件下连续重复化学吸附和接触。

3. 发明申请

US20060261441A1 Process for forming a low carbon, low resistance metal film during the manufacture of a semiconductor device and systems including same 审中-公开
标题翻译：在制造半导体器件期间形成低碳低电阻金属膜的方法及包括其的系统的方法
公开(公告)号：US20060261441A1
公开(公告)日：2006-11-23
申请号：US11134906
申请日：2005-05-23
申请人： Eugene Marsh , Brenda Kraus
发明人： Eugene Marsh , Brenda Kraus
IPC分类号： H01L29/40 , H01L21/44
CPC分类号： H01L21/76862 , H01L21/28556 , H01L21/76841 , H01L21/76864 , H01L21/76871 , H01L27/10811 , H01L27/10817 , H01L27/10852 , H01L28/65 , H01L28/91
摘要： A method for forming a conductive feature comprises forming a metal film such as ruthenium then annealing the film in an atmosphere comprising a hydrogen-rich gas such as ammonia, hydrogen, borane, or diborane, or in another gas such as carbon monoxide. The anneal may decrease the carbon content of the film and results in a metal layer having a lower resistance than the preannealed metal film.
摘要翻译：用于形成导电特征的方法包括形成诸如钌的金属膜，然后在包含富氢气体如氨，氢气，硼烷或乙硼烷的气氛中退火，或在另一种气体如一氧化碳中退火。退火可能降低膜的碳含量，并导致具有比预退火金属膜更低的电阻的金属层。

4. 发明申请

US20070200243A1 ALD FORMED TITANIUM NITRIDE FILMS 有权
标题翻译： ALD形成的氮化钛膜
公开(公告)号：US20070200243A1
公开(公告)日：2007-08-30
申请号：US11742309
申请日：2007-04-30
申请人： Brenda Kraus , Eugene Marsh
发明人： Brenda Kraus , Eugene Marsh
IPC分类号： H01L23/48
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45534 , H01L21/02186 , H01L21/0228 , H01L21/28061 , H01L21/3141 , H01L21/76843 , H01L21/76846 , H01L28/75 , H01L29/4941 , Y10S257/915
摘要： The use of atomic layer deposition (ALD) to form a conductive titanium nitride layer produces a reliable structure for use in a variety of electronic devices. The structure is formed by depositing titanium nitride by atomic layer deposition onto a substrate surface using a titanium-containing precursor chemical such as TDEAT, followed by a mixture of ammonia and carbon monoxide or carbon monoxide alone, and repeating to form a sequentially deposited TiN structure. Such a TiN layer may be used as a diffusion barrier underneath another conductor such as aluminum or copper, or as an electro-migration preventing layer on top of an aluminum conductor. ALD deposited TiN layers have low resistivity, smooth topology, high deposition rates, and excellent step coverage and electrical continuity.
摘要翻译：使用原子层沉积（ALD）形成导电氮化钛层产生用于各种电子器件的可靠结构。该结构通过使用含钛前体化学品如TDEAT将原子层沉积氮化钛沉积到衬底表面上，然后将氨和一氧化碳或一氧化碳的混合物单独沉积并重复形成依次沉积的TiN结构。这样的TiN层可以用作另一种导体如铝或铜之下的扩散阻挡层，或者作为铝导体顶部的防电迁移层。 ALD沉积的TiN层具有低电阻率，平滑的拓扑结构，高沉积速率和优异的阶梯覆盖和电连续性。

5. 发明申请

US20050112298A1 Method for making sol gel spacers for flat panel displays 审中-公开
标题翻译：制造平板显示器用溶胶凝胶垫片的方法
公开(公告)号：US20050112298A1
公开(公告)日：2005-05-26
申请号：US10978323
申请日：2004-11-01
申请人： James Hofmann , Brian Vaartstra , Brenda Kraus , Donald Westmoreland
发明人： James Hofmann , Brian Vaartstra , Brenda Kraus , Donald Westmoreland
IPC分类号： B05D5/12 , B29C33/38 , B29C59/00 , G02F1/1339
CPC分类号： G03F7/0017 , B29C33/3857 , G02F1/1339 , G02F1/13394 , H01J2211/36 , Y10T428/1059
摘要： The present invention describes thick film photolithographic molds, methods of making thick film photolithographic molds, and methods of using thick film photolithographic molds to form spacers on a substrate. The thick film photolithographic molds preferably comprise an epoxy bisphenol A novolac resin. The present invention also describes sol gel spacers comprising sodium silicates and potassium silicates. The thick film photolithographic molds and sol gel spacers of the present invention can be used in flat panel displays, such as field emission displays and plasma displays.
摘要翻译：本发明描述了厚膜光刻模具，制备厚膜光刻模具的方法，以及使用厚膜光刻模具在衬底上形成间隔物的方法。厚膜光刻模优选包含环氧双酚A酚醛清漆树脂。本发明还描述了包含硅酸钠和硅酸钾的溶胶凝胶间隔物。本发明的厚膜光刻模和溶胶凝胶间隔物可用于诸如场发射显示器和等离子体显示器的平板显示器中。

6. 发明申请

US20050006769A1 Semiconductor device with metal fill by treatment of mobility layers 失效
标题翻译：具有通过处理迁移率层的金属填充的半导体器件
公开(公告)号：US20050006769A1
公开(公告)日：2005-01-13
申请号：US10915131
申请日：2004-08-10
申请人： John Givens , Russell Zahorik , Brenda Kraus
发明人： John Givens , Russell Zahorik , Brenda Kraus
IPC分类号： H01L23/485 , H01L23/532 , H01L23/48 , H01L21/00 , H01L21/4763 , H01L23/52 , H01L29/40
CPC分类号： H01L23/485 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A recess having a height-to-width aspect ratio from about 6:1 to about 10:1 in a semiconductor structure is disclosed with a method of forming the same. In a first embodiment, a refractory metal layer is formed in the recess, which can be a trench, a contact hole, or a combination thereof. A refractory metal nitride layer is then formed on the refractory metal layer. A heat treatment is used to form a metal silicide contact at the bottom of the contact hole upon a semiconductor material. In a first alternative method, an ammonia high-temperature treatment is conducted to remove undesirable impurities within the refractory metal nitride layer lining the contact hole and to replace the impurities with more nitrogen. In a second alternative method, a second refractory metal nitride layer is formed by PVD upon the first refractory metal nitride layer. In either alternative, a metallization layer is deposited within the recess.
摘要翻译：通过形成半导体结构的方法，公开了半导体结构中的高度 - 宽度纵横比为约6:1至约10:1的凹槽。在第一实施例中，难熔金属层形成在凹槽中，其可以是沟槽，接触孔或其组合。然后在难熔金属层上形成难熔金属氮化物层。使用热处理在半导体材料上的接触孔的底部形成金属硅化物接触。在第一替代方法中，进行氨高温处理以除去在接触孔内衬的难熔金属氮化物层内的不期望的杂质，并用更多的氮替代杂质。在第二替代方法中，通过PVD在第一难熔金属氮化物层上形成第二难熔金属氮化物层。在任一替代方案中，在凹陷内沉积金属化层。

7. 发明申请

US20100075037A1 Deposition Systems, ALD Systems, CVD Systems, Deposition Methods, ALD Methods and CVD Methods 审中-公开
标题翻译：沉积系统，ALD系统，CVD系统，沉积方法，ALD方法和CVD方法
公开(公告)号：US20100075037A1
公开(公告)日：2010-03-25
申请号：US12235147
申请日：2008-09-22
申请人： Eugene P. Marsh , Tim Quick , Stefan Uhlenbrock , Brenda Kraus
发明人： Eugene P. Marsh , Tim Quick , Stefan Uhlenbrock , Brenda Kraus
IPC分类号： C23C14/22 , C23C16/54
CPC分类号： C23C16/40 , C23C16/4412 , C23C16/45544 , C23C16/45593
摘要： Some embodiments include deposition systems configured for reclaiming unreacted precursor with one or more traps provided downstream of a reaction chamber. Some of the deposition systems may utilize two or more traps that are connected in parallel relative to one another and configured so that the traps may be alternately utilized for trapping precursor and releasing trapped precursor back into the reaction chamber. Some of the deposition systems may be configured for ALD, and some may be configured for CVD.
摘要翻译：一些实施方案包括沉积系统，该沉积系统被配置用于用设置在反应室下游的一个或多个捕集阱回收未反应的前体。一些沉积系统可以利用彼此并联连接的两个或更多个陷阱，并且构造成使得捕集器可以交替地用于捕获前体并将捕获的前体释放回到反应室中。一些沉积系统可以被配置用于ALD，并且一些沉积系统可以被配置用于CVD。

8. 发明申请

US20070092989A1 Conductive nanoparticles 有权
标题翻译：导电纳米粒子
公开(公告)号：US20070092989A1
公开(公告)日：2007-04-26
申请号：US11197184
申请日：2005-08-04
申请人： Brenda Kraus , Eugene Marsh
发明人： Brenda Kraus , Eugene Marsh
IPC分类号： H01L51/40
CPC分类号： H01L29/42332 , B82Y10/00 , B82Y30/00 , H01L21/28273 , H01L21/28556 , H01L29/7881 , Y10S438/964 , Y10S977/943
摘要： Isolated conductive nanoparticles on a dielectric layer and methods of fabricating such isolated conductive nanoparticles provide charge storage units in electronic structures for use in a wide range of electronic devices and systems. The isolated conductive nanoparticles may be used as a floating gate in a flash memory. In an embodiment, conductive nanoparticles are deposited on a dielectric layer by a plasma-assisted deposition process such that each conductive nanoparticle is isolated from the other conductive nanoparticles to configure the conductive nanoparticles as charge storage elements.
摘要翻译：电介质层上的隔离导电纳米颗粒和制造这种隔离导电纳米颗粒的方法提供电子结构中的电荷存储单元，用于广泛的电子设备和系统。隔离的导电纳米颗粒可以用作闪存中的浮动栅极。在一个实施例中，通过等离子体辅助沉积工艺将导电纳米颗粒沉积在电介质层上，使得每个导电纳米颗粒与其它导电纳米颗粒分离，以将导电纳米颗粒配置为电荷存储元件。

9. 发明申请

US20060139561A1 Mold for forming spacers for flat panel displays 审中-公开
标题翻译：用于形成用于平板显示器的间隔件的模具
公开(公告)号：US20060139561A1
公开(公告)日：2006-06-29
申请号：US11356907
申请日：2006-02-17
申请人： James Hofmann , Brian Vaartstra , Brenda Kraus , Donald Westmoreland
发明人： James Hofmann , Brian Vaartstra , Brenda Kraus , Donald Westmoreland
IPC分类号： G02F1/1339
CPC分类号： G03F7/0017 , B29C33/3857 , G02F1/1339 , G02F1/13394 , H01J2211/36 , Y10T428/1059
摘要： The present invention describes thick film photolithographic molds, methods of making thick film photolithographic molds, and methods of using thick film photolithographic molds to form spacers on a substrate. The thick film photolithographic molds preferably comprise an epoxy bisphenol A novolac resin. The present invention also describes sol gel spacers comprising sodium silicates and potassium silicates. The thick film photolithographic molds and sol gel spacers of the present invention can be used in flat panel displays, such as field emission displays and plasma displays.
摘要翻译：本发明描述了厚膜光刻模具，制备厚膜光刻模具的方法，以及使用厚膜光刻模具在衬底上形成间隔物的方法。厚膜光刻模优选包含环氧双酚A酚醛清漆树脂。本发明还描述了包含硅酸钠和硅酸钾的溶胶凝胶间隔物。本发明的厚膜光刻模和溶胶凝胶间隔物可用于诸如场发射显示器和等离子体显示器的平板显示器中。

10. 发明申请

US20050263489A1 Ruthenium silicide wet etch 审中-公开
公开(公告)号：US20050263489A1
公开(公告)日：2005-12-01
申请号：US11159029
申请日：2005-06-21
申请人： Brenda Kraus , Michael Andreas
发明人： Brenda Kraus , Michael Andreas
IPC分类号： C23F1/30 , A62C2/00 , A62D1/00 , B44C1/22 , C09K13/00 , C09K13/04 , C09K13/08 , H01L20060101 , H01L21/02 , H01L21/28 , H01L21/302 , H01L21/306 , H01L21/3205 , H01L21/3213 , H01L21/461 , H01L21/8242 , H01L23/52 , H01L27/108
CPC分类号： H01L28/65 , C09K13/00 , C09K13/08 , H01L21/32134
摘要： A method of removing ruthenium silicide from a substrate surface which comprises exposing the ruthenium silicide surface to a solution containing chlorine and fluorine containing chemicals. In particular, said solution is designed to react with said ruthenium silicide film such that water-soluble reaction products are formed.

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