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1. 发明申请

US20070207613A1 Methods for selective removal of material from wafer alignment marks 有权
公开(公告)号：US20070207613A1
公开(公告)日：2007-09-06
申请号：US11711491
申请日：2007-02-26
申请人： Russell Zahorik , Guy Hudson , Hugh Stroupe , Todd Dobson , Brian Gordon
发明人： Russell Zahorik , Guy Hudson , Hugh Stroupe , Todd Dobson , Brian Gordon
IPC分类号： H01L21/02
CPC分类号： H01L23/544 , C23F1/08 , H01L21/0206 , H01L21/02063 , H01L21/02074 , H01L21/02087 , H01L21/0209 , H01L21/67028 , H01L21/6708 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , Y10S134/902 , H01L2924/00
摘要： A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon.

2. 发明申请

US20050042862A1 Small electrode for chalcogenide memories 失效
标题翻译：用于硫族化物记忆的小电极
公开(公告)号：US20050042862A1
公开(公告)日：2005-02-24
申请号：US10931196
申请日：2004-08-31
申请人： Russell Zahorik
发明人： Russell Zahorik
IPC分类号： H01L21/44 , H01L21/4763 , H01L21/768 , H01L45/00 , H01L47/00
CPC分类号： H01L45/06 , H01L21/76816 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/16 , H01L45/1675 , Y10S438/947
摘要： A method for fabricating an ultra-small electrode or plug contact for use in chalcogenide memory cells specifically, and in semiconductor devices generally, in which disposable spacers are utilized to fabricate ultra-small pores into which the electrodes are formed. The electrodes thus defined have minimum lateral dimensions ranging from approximately 500 to 4000 Angstroms. The pores thus defined may then be used to fabricate a chalcogenide memory cell or other semiconductor devices.
摘要翻译：特别是在硫族化物记忆单元中制造用于硫族化物记忆体的超小电极或插塞接触的方法，以及通常使用一次性间隔物制造形成电极的超小孔的半导体器件。如此限定的电极具有约500至4000埃的最小横向尺寸。然后可以将如此限定的孔用于制造硫族化物存储器单元或其它半导体器件。

3. 发明申请

US20080055973A1 Small Electrode for a Chacogenide Switching Device and Method for Fabricating Same 审中-公开
标题翻译： Chacogenide开关装置的小电极及其制造方法
公开(公告)号：US20080055973A1
公开(公告)日：2008-03-06
申请号：US11929331
申请日：2007-10-30
申请人： Alan Reinberg , Russell Zahorik , Renee Zahorik
发明人： Alan Reinberg , Russell Zahorik , Renee Zahorik
IPC分类号： H01L45/00
CPC分类号： H01L27/2463 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683 , H01L45/1691
摘要： Semiconductor devices including a memory cell are provided. In one embodiment, the memory cell includes a first conductive material within a pore of a dielectric layer. The first conductive material may include a first surface having a first dimension that is less than the photolithographic limit. Further, in this embodiment, the memory cell includes a structure changing material in contact with the first surface of the first conductive material along a substantial portion of the first dimension. Additional devices and systems including a memory cell, and methods for manufacturing such a memory cell, are also provided.
摘要翻译：提供包括存储单元的半导体装置。在一个实施例中，存储单元包括介电层孔内的第一导电材料。第一导电材料可以包括具有小于光刻极限的第一尺寸的第一表面。此外，在本实施例中，存储单元包括沿着第一尺寸的大部分与第一导电材料的第一表面接触的结构改变材料。还提供了包括存储单元的附加设备和系统以及用于制造这种存储单元的方法。

4. 发明申请

US20060261380A1 Small electrode for a chalcogenide switching device and method for fabricating same 失效
标题翻译：硫属元素切换装置的小电极及其制造方法
公开(公告)号：US20060261380A1
公开(公告)日：2006-11-23
申请号：US11494052
申请日：2006-07-27
申请人： Alan Reinberg , Russell Zahorik
发明人： Alan Reinberg , Russell Zahorik
IPC分类号： H01L29/768
CPC分类号： H01L27/2463 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683 , H01L45/1691
摘要： A memory cell and a method of fabricating the memory cell having a small active area are provided. By forming a spacer in a window that is sized at the photolithographic limit, in one embodiment, a pore may be formed in dielectric layer which is smaller than the photolithographic limit. Electrode material is deposited into the pore, and a layer of structure changing material, such as chalcogenide, is deposited onto the lower electrode, thus creating a memory element having an extremely small and reproducible active area.
摘要翻译：提供了存储单元和制造具有小的有效面积的存储单元的方法。通过在尺寸为光刻极限的窗口中形成间隔物，在一个实施例中，可以在小于光刻极限的电介质层中形成孔。将电极材料沉积到孔中，并且将一层结构改变材料（例如硫族化物）沉积在下电极上，从而产生具有非常小且可再现的有效面积的存储元件。

5. 发明申请

US20050006769A1 Semiconductor device with metal fill by treatment of mobility layers 失效
标题翻译：具有通过处理迁移率层的金属填充的半导体器件
公开(公告)号：US20050006769A1
公开(公告)日：2005-01-13
申请号：US10915131
申请日：2004-08-10
申请人： John Givens , Russell Zahorik , Brenda Kraus
发明人： John Givens , Russell Zahorik , Brenda Kraus
IPC分类号： H01L23/485 , H01L23/532 , H01L23/48 , H01L21/00 , H01L21/4763 , H01L23/52 , H01L29/40
CPC分类号： H01L23/485 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A recess having a height-to-width aspect ratio from about 6:1 to about 10:1 in a semiconductor structure is disclosed with a method of forming the same. In a first embodiment, a refractory metal layer is formed in the recess, which can be a trench, a contact hole, or a combination thereof. A refractory metal nitride layer is then formed on the refractory metal layer. A heat treatment is used to form a metal silicide contact at the bottom of the contact hole upon a semiconductor material. In a first alternative method, an ammonia high-temperature treatment is conducted to remove undesirable impurities within the refractory metal nitride layer lining the contact hole and to replace the impurities with more nitrogen. In a second alternative method, a second refractory metal nitride layer is formed by PVD upon the first refractory metal nitride layer. In either alternative, a metallization layer is deposited within the recess.
摘要翻译：通过形成半导体结构的方法，公开了半导体结构中的高度 - 宽度纵横比为约6:1至约10:1的凹槽。在第一实施例中，难熔金属层形成在凹槽中，其可以是沟槽，接触孔或其组合。然后在难熔金属层上形成难熔金属氮化物层。使用热处理在半导体材料上的接触孔的底部形成金属硅化物接触。在第一替代方法中，进行氨高温处理以除去在接触孔内衬的难熔金属氮化物层内的不期望的杂质，并用更多的氮替代杂质。在第二替代方法中，通过PVD在第一难熔金属氮化物层上形成第二难熔金属氮化物层。在任一替代方案中，在凹陷内沉积金属化层。

6. 发明申请

US20080048171A1 SMALL ELECTRODE FOR PHASE CHANGE MEMORIES 失效
标题翻译：用于相变记忆的小电极
公开(公告)号：US20080048171A1
公开(公告)日：2008-02-28
申请号：US11861202
申请日：2007-09-25
申请人： Russell Zahorik
发明人： Russell Zahorik
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L21/76816 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/16 , H01L45/1675 , Y10S438/947
摘要： A method of manufacturing a memory cell is disclosed. In one embodiment, the method includes forming an electrode including an outer surface that is substantially circular and an exposed surface that has a sublithographic dimension in a direction parallel to the exposed surface. Further, the method may also include forming a layer of phase change material coupled to the exposed surface of the electrode. Various semiconductor devices and additional methods of manufacturing memory cells are also provided.
摘要翻译：公开了一种制造存储单元的方法。在一个实施例中，该方法包括形成包括大致圆形的外表面和在平行于暴露表面的方向上具有亚光刻尺寸的暴露表面的电极。此外，该方法还可以包括形成耦合到电极的暴露表面的相变材料层。还提供各种半导体器件和制造存储器单元的附加方法。

7. 发明申请

US20050169070A1 Small electrode for a chalcogenide switching device and method for fabricating same 有权
标题翻译：硫属元素切换装置的小电极及其制造方法
公开(公告)号：US20050169070A1
公开(公告)日：2005-08-04
申请号：US10872765
申请日：2004-06-21
申请人： Alan Reinberg , Russell Zahorik , Renee Zahorik
发明人： Alan Reinberg , Russell Zahorik , Renee Zahorik
IPC分类号： H01L27/24 , H01L45/00 , G11C7/00
CPC分类号： H01L27/2463 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683 , H01L45/1691
摘要： A memory cell and a method of fabricating the memory cell having a small active area. By forming a spacer in a window that is sized at the photolithographic limit, a pore may be formed in dielectric layer which is smaller than the photolithographic limit. Electrode material is deposited into the pore, and a layer of structure changing material, such as chalcogenide, is deposited onto the lower electrode, thus creating a memory element having an extremely small and reproducible active area.
摘要翻译：一种存储单元和一种制造具有小的有效面积的存储单元的方法。通过在尺寸为光刻极限的窗口中形成间隔物，可以在小于光刻极限的电介质层中形成孔。将电极材料沉积到孔中，并且将一层结构改变材料（例如硫族化物）沉积在下电极上，从而产生具有非常小且可再现的有效面积的存储元件。

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