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1. 发明授权

US09006075B2 Memory cells, semiconductor devices including such cells, and methods of fabrication 有权
标题翻译：存储单元，包括这种单元的半导体器件，以及制造方法
公开(公告)号：US09006075B2
公开(公告)日：2015-04-14
申请号：US13298987
申请日：2011-11-17
申请人： Timothy A. Quick , Eugene P. Marsh , Stefan Uhlenbrock , Chet E. Carter , Scott E. Sills
发明人： Timothy A. Quick , Eugene P. Marsh , Stefan Uhlenbrock , Chet E. Carter , Scott E. Sills
IPC分类号： H01L21/22 , H01L45/00
CPC分类号： H01L45/085 , H01L45/1233 , H01L45/141 , H01L45/1608 , H01L45/1616
摘要： Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.
摘要翻译：公开了存储器单元，其中电池包括细胞材料和细胞材料上的离子源材料。细胞材料和离子源材料之间包含不连续的界面材料。还公开了包括所公开的存储单元的制造方法和半导体器件。

2. 发明授权

US08759146B2 Methods of forming germanium-antimony-tellurium materials and methods of forming a semiconductor device structure including the same 有权
标题翻译：形成锗 - 锑 - 碲材料的方法和形成包括其的半导体器件结构的方法
公开(公告)号：US08759146B2
公开(公告)日：2014-06-24
申请号：US13416646
申请日：2012-03-09
申请人： Eugene P. Marsh
发明人： Eugene P. Marsh
IPC分类号： H01L21/00
CPC分类号： H01L45/1616 , C23C16/305 , C23C16/45531 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： A method of forming a material comprises conducting an ALD layer cycle of a first metal, the ALD layer cycle comprising a reactive first metal precursor and a co-reactive first metal precursor. An ALD layer cycle of a second metal is conducted, the ALD layer cycle comprising a reactive second metal precursor and a co-reactive second metal precursor. An ALD layer cycle of a third metal is conducted, the ALD layer cycle comprising a reactive third metal precursor and a co-reactive third metal precursor. The ALD layer cycles of the first metal, the second metal, and the third metal are repeated to form a material, such as a GeSbTe material, having a desired stoichiometry. Additional methods of forming a material, such as a GeSbTe material, are disclosed, as is a method of forming a semiconductor device structure including a GeSbTe material.
摘要翻译：形成材料的方法包括进行第一金属的ALD层循环，所述ALD层循环包含反应性第一金属前体和共反应性第一金属前体。进行第二金属的ALD层循环，ALD层循环包含反应性第二金属前体和共反应性第二金属前体。进行第三金属的ALD层循环，ALD层循环包含反应性第三金属前体和共反应性第三金属前体。重复第一金属，第二金属和第三金属的ALD层循环以形成具有所需化学计量的材料，例如GeSbTe材料。公开了形成诸如GeSbTe材料的材料的附加方法，以及形成包括GeSbTe材料的半导体器件结构的方法。

3. 发明授权

US08753933B2 Methods for forming a conductive material, methods for selectively forming a conductive material, methods for forming platinum, and methods for forming conductive structures 有权
标题翻译：用于形成导电材料的方法，用于选择性地形成导电材料的方法，用于形成铂的方法，以及用于形成导电结构的方法
公开(公告)号：US08753933B2
公开(公告)日：2014-06-17
申请号：US12274169
申请日：2008-11-19
申请人： Eugene P. Marsh
发明人： Eugene P. Marsh
IPC分类号： H01L21/8242
CPC分类号： H01L21/7687 , C23C16/04 , C23C16/18 , H01L21/2855 , H01L23/5223 , H01L27/10852 , H01L28/65 , H01L28/91 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Methods of selectively forming a conductive material and methods of forming metal conductive structures are disclosed. An organic material may be patterned to expose regions of an underlying material. The underlying material may be exposed to a precursor gas, such as a platinum precursor gas, that reacts with the underlying material without reacting with the remaining portions of the organic material located over the underlying material. The precursor gas may be used in an atomic layer deposition process, during which the precursor gas may selectively react with the underlying material to form a conductive structure, but not react with the organic material. The conductive structures may be used, for example, as a mask for patterning during various stages of semiconductor device fabrication.
摘要翻译：公开了选择性地形成导电材料的方法和形成金属导电结构的方法。有机材料可以被图案化以暴露下面的材料的区域。潜在的材料可能暴露于前体气体，例如铂前体气体，其与下面的材料反应，而不与位于下面的材料上方的有机材料的其余部分反应。前体气体可以用于原子层沉积过程中，在此期间，前体气体可以选择性地与下面的材料反应以形成导电结构，但不与有机材料反应。导电结构可以用作例如在半导体器件制造的各个阶段期间用于图案化的掩模。

4. 发明申请

US20140027775A1 METHODS OF FORMING A METAL CHALCOGENIDE MATERIAL, RELATED METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE, AND A RELATED SEMICONDUCTOR DEVICE STRUCTURE 有权
标题翻译：形成金属氯化铝材料的方法，形成半导体器件结构的相关方法以及相关的半导体器件结构
公开(公告)号：US20140027775A1
公开(公告)日：2014-01-30
申请号：US13556751
申请日：2012-07-24
申请人： Timothy A. Quick , Stefan Uhlenbrock , Eugene P. Marsh
发明人： Timothy A. Quick , Stefan Uhlenbrock , Eugene P. Marsh
IPC分类号： H01L31/18 , H01L31/0272
CPC分类号： H01L21/02568 , C23C16/305 , C23C16/45525 , H01L21/0237 , H01L21/0256 , H01L21/02562 , H01L21/02614 , H01L21/0262 , H01L31/0324
摘要： Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.
摘要翻译：因此，形成金属硫族化物材料的方法可以包括将至少一种金属前体和至少一种硫属前体引入包含基底的室中，所述至少一种金属前体包含碱金属的胺或亚胺化合物，碱土金属，过渡金属，后过渡金属或准金属，以及所述至少一种硫族元素前体包含硫，硒或碲的氢化物，烷基或芳基化合物。所述至少一种金属前体和所述至少一种硫属前体可以反应以在所述基底上形成金属硫族化物材料。还描述了形成金属碲化物材料的方法，形成半导体器件结构的方法和半导体器件结构。

5. 发明申请

US20120321876A1 ARTICLES HAVING SEMICONDUCTIVE CARBON NANOTUBES 审中-公开
标题翻译：具有半导体碳纳米管的文章
公开(公告)号：US20120321876A1
公开(公告)日：2012-12-20
申请号：US13595713
申请日：2012-08-27
申请人： Eugene P. Marsh , Gurtej S. Sandhu
发明人： Eugene P. Marsh , Gurtej S. Sandhu
IPC分类号： D01F9/12 , B32B9/00 , B82Y30/00
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/17 , C01B2202/02 , C01B2202/06 , C01B2202/22 , C01B2202/34 , Y10T428/249924 , Y10T428/249953 , Y10T428/2918
摘要： A process of forming a semiconductive carbon nanotube structure includes imposing energy on a mixture that contains metallic carbon nanotubes and semiconductive carbon nanotubes under conditions to cause the metallic carbon nanotubes to be digested or to decompose so that they may be separated away from the semiconductive carbon nanotubes.
摘要翻译：形成半导体碳纳米管结构的方法包括在使金属碳纳米管被消化或分解的条件下在包含金属碳纳米管和半导体碳纳米管的混合物上施加能量，使得它们可以与半导体碳纳米管分离。

6. 发明授权

US08314456B2 Apparatus including rhodium-based charge traps 有权
标题翻译：装置包括基于铑的电荷阱
公开(公告)号：US08314456B2
公开(公告)日：2012-11-20
申请号：US13194188
申请日：2011-07-29
申请人： Eugene P. Marsh , Brenda D Kraus
发明人： Eugene P. Marsh , Brenda D Kraus
IPC分类号： H01L29/792
CPC分类号： H01L29/42332 , B22F9/12 , B22F2998/00 , B22F2999/00 , B82Y10/00 , B82Y30/00 , H01L21/28273 , H01L29/7881 , B22F1/0018 , B22F2202/13
摘要： Isolated conductive nanoparticles on a dielectric layer and methods of fabricating such isolated conductive nanoparticles provide charge traps in electronic structures for use in a wide range of electronic devices and systems. In an embodiment, conductive nanoparticles are deposited on a dielectric layer by a plasma-assisted deposition process such that each conductive nanoparticle is isolated from the other conductive nanoparticles to configure the conductive nanoparticles as charge traps.
摘要翻译：电介质层上的隔离导电纳米颗粒和制造这种隔离导电纳米颗粒的方法在电子结构中提供电荷陷阱，用于广泛的电子设备和系统。在一个实施例中，通过等离子体辅助沉积工艺将导电纳米颗粒沉积在电介质层上，使得每个导电纳米颗粒与其它导电纳米颗粒分离，以将导电纳米颗粒配置为电荷陷阱。

7. 发明授权

US08225745B2 Chemical vaporizer for material deposition systems and associated methods 失效
标题翻译：用于材料沉积系统和相关方法的化学蒸发器
公开(公告)号：US08225745B2
公开(公告)日：2012-07-24
申请号：US13019885
申请日：2011-02-02
申请人： Eugene P. Marsh , David R. Atwell
发明人： Eugene P. Marsh , David R. Atwell
IPC分类号： C23C16/448 , C23C16/52 , C23F1/00 , H01L21/306 , G05B15/00 , B05D7/22 , B05D5/00 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4405 , C23C16/4402 , C23C16/4481 , C23C16/52 , Y10T137/0357
摘要： System and method for operating a material deposition system are disclosed. In one embodiment, the method can include periodically injecting a precursor into a vaporizer through an injector at the vaporizer, vaporizing the precursor in the vaporizer and supplying the vaporized precursor to a reaction chamber in fluid communication with the vaporizer, and shutting down the vaporizer and the reaction chamber after a period of time. The method can also include conducting maintenance of the injector at the vaporizer by using a vapor solvent rinse.
摘要翻译：公开了用于操作材料沉积系统的系统和方法。在一个实施方案中，该方法可以包括通过蒸发器处的注射器周期性地将前体注入蒸发器中，蒸发蒸发器中的前体并将蒸发的前体供应到与蒸发器流体连通的反应室，并且关闭蒸发器和反应室经过一段时间。该方法还可以包括通过使用蒸气溶剂冲洗在蒸发器处进行喷射器的维护。

8. 发明授权

US08222127B2 Methods of forming structures having nanotubes extending between opposing electrodes and structures including same 有权
标题翻译：形成具有在相对电极之间延伸的纳米管和包括其的结构的方法
公开(公告)号：US08222127B2
公开(公告)日：2012-07-17
申请号：US12176013
申请日：2008-07-18
申请人： Eugene P. Marsh , Gurtej S. Sandhu
发明人： Eugene P. Marsh , Gurtej S. Sandhu
IPC分类号： H01L21/20 , H01L29/66
CPC分类号： H01L51/0558 , B82Y10/00 , G11C13/025 , H01L21/02527 , H01L21/02606 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L29/0665 , H01L29/0673 , H01L29/1606 , H01L29/7781 , H01L29/78 , H01L51/0003 , H01L51/0048 , H01L51/0562
摘要： A semiconductor structure including nanotubes forming an electrical connection between electrodes is disclosed. The semiconductor structure may include an open volume defined by a lower surface of an electrically insulative material and sidewalls of at least a portion of each of a dielectric material and opposing electrodes. The nanotubes may extend between the opposing electrodes, forming a physical and electrical connection therebetween. The nanotubes may be encapsulated within the open volume in the semiconductor structure. A semiconductor structure including nanotubes forming an electrical connection between source and drain regions is also disclosed. The semiconductor structure may include at least one semiconducting carbon nanotube electrically connected to a source and a drain, a dielectric material disposed over the at least one semiconducting carbon nanotube and a gate dielectric overlying a portion of the dielectric material. Methods of forming the semiconductor structures are also disclosed.
摘要翻译：公开了一种包括在电极之间形成电连接的纳米管的半导体结构。半导体结构可以包括由电绝缘材料的下表面限定的开放体积和电介质材料和相对电极中的每一个的至少一部分的侧壁。纳米管可以在相对的电极之间延伸，在它们之间形成物理和电连接。纳米管可以封装在半导体结构中的开放体积内。还公开了包括在源区和漏区之间形成电连接的纳米管的半导体结构。半导体结构可以包括电连接到源极和漏极的至少一个半导体碳纳米管，设置在至少一个半导体碳纳米管上方的电介质材料和覆盖该介电材料的一部分的栅极电介质。还公开了形成半导体结构的方法。

9. 发明申请

US20120171812A1 METHODS OF FORMING GERMANIUM-ANTIMONY-TELLURIUM MATERIALS AND METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE INCLUDING THE SAME 有权
标题翻译：形成锗 - 抗微生物材料的方法及其形成包括其的半导体器件结构的方法
公开(公告)号：US20120171812A1
公开(公告)日：2012-07-05
申请号：US13416646
申请日：2012-03-09
申请人： Eugene P. Marsh
发明人： Eugene P. Marsh
IPC分类号： H01L21/06
CPC分类号： H01L45/1616 , C23C16/305 , C23C16/45531 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： A method of forming a material comprises conducting an ALD layer cycle of a first metal, the ALD layer cycle comprising a reactive first metal precursor and a co-reactive first metal precursor. An ALD layer cycle of a second metal is conducted, the ALD layer cycle comprising a reactive second metal precursor and a co-reactive second metal precursor. An ALD layer cycle of a third metal is conducted, the ALD layer cycle comprising a reactive third metal precursor and a co-reactive third metal precursor. The ALD layer cycles of the first metal, the second metal, and the third metal are repeated to form a material, such as a GeSbTe material, having a desired stoichiometry. Additional methods of forming a material, such as a GeSbTe material, are disclosed, as is a method of forming a semiconductor device structure including a GeSbTe material.
摘要翻译：形成材料的方法包括进行第一金属的ALD层循环，所述ALD层循环包含反应性第一金属前体和共反应性第一金属前体。进行第二金属的ALD层循环，ALD层循环包含反应性第二金属前体和共反应性第二金属前体。进行第三金属的ALD层循环，ALD层循环包含反应性第三金属前体和共反应性第三金属前体。重复第一金属，第二金属和第三金属的ALD层循环以形成具有所需化学计量的材料，例如GeSbTe材料。公开了形成诸如GeSbTe材料的材料的附加方法，以及形成包括GeSbTe材料的半导体器件结构的方法。

10. 发明申请

US20120086104A1 ATOMIC LAYER DEPOSITION OF CRYSTALLINE PrCaMnO (PCMO) AND RELATED STRUCTURES AND METHODS 有权
标题翻译：晶体沉积的原子层沉积（PCMO）及相关结构与方法
公开(公告)号：US20120086104A1
公开(公告)日：2012-04-12
申请号：US12902590
申请日：2010-10-12
申请人： Eugene P. Marsh
发明人： Eugene P. Marsh
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L45/147 , C23C16/409 , C23C16/45531 , H01L45/1616
摘要： Methods of forming a PrCaMnO (PCMO) material by atomic layer deposition. The methods include separately exposing a surface of a substrate to a manganese-containing precursor, an oxygen-containing precursor, a praseodymium-containing precursor and a calcium-containing precursor. The resulting PCMO material is crystalline. A semiconductor device structure including the PCMO material, and related methods, are also disclosed.
摘要翻译：通过原子层沉积形成PrCaMnO（PCMO）材料的方法。这些方法包括将基材的表面分别暴露于含锰前体，含氧前体，含镨前体和含钙前体。得到的PCMO材料是结晶的。还公开了包括PCMO材料的半导体器件结构及相关方法。

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