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    • 1. 发明授权
    • Anchor rod
    • 锚杆
    • US09464524B2
    • 2016-10-11
    • US14345903
    • 2012-07-10
    • Josef GloggerBernhard Winkler
    • Josef GloggerBernhard Winkler
    • E21D20/02F16B13/14
    • E21D20/02E21D20/021E21D20/025F16B13/141
    • An anchor rod is disclosed. The anchor rod includes an attachment region and an anchoring region which is insertable into a borehole and which has a profiled section. The profiled section interacts with a curable organic and/or inorganic mortar compound filled into the borehole. The profiled section includes a plurality of expansion sections disposed axially in a row which are conically shaped. For each of the plurality of expansion sections, a diameter of the expansion section increases in a direction toward a free front end of the anchor rod, a ratio of a distance of the expansion section to a mean borehole diameter is 0.40 to 0.60, a ratio of an outer diameter to a core diameter of the expansion section is 1.35 to 1.55, and a cone angle of the expansion section is 22.5° to 27.5°.
    • 公开了一种锚杆。 锚杆包括附接区域和可插入钻孔中并具有成型部分的锚定区域。 型材部分与填充到钻孔中的可固化的有机和/或无机砂浆化合物相互作用。 成形部分包括多个沿圆锥形状排列成一列的膨胀部分。 对于多个膨胀部中的每一个,膨胀部的直径朝向锚杆的自由前端的方向增大,膨胀部的距离与平均井眼直径的比率为0.40〜0.60, 的外径与膨胀部的芯直径的比为1.35〜1.55,膨胀部的锥角为22.5°〜27.5°。
    • 5. 发明授权
    • MEMS devices and methods of manufacture thereof
    • MEMS器件及其制造方法
    • US08198690B2
    • 2012-06-12
    • US12853814
    • 2010-08-10
    • Florian SchoenWolfgang RabergBernhard WinklerWerner Weber
    • Florian SchoenWolfgang RabergBernhard WinklerWerner Weber
    • H01L29/84
    • B81C1/00182B81B2201/0271H01L41/0933Y10S977/732
    • Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.
    • 公开了微机电系统(MEMS)装置及其制造方法。 在一个实施例中,MEMS器件包括第一半导体材料和设置在第一半导体材料中的至少一个沟槽,所述至少一个沟槽具有侧壁。 绝缘材料层设置在第一半导体材料中的至少一个沟槽的侧壁的上部上方,以及靠近侧壁的第一半导体材料的顶表面的一部分之上。 第二半导体材料或导电材料设置在至少一个沟槽内,并且至少在绝缘材料层的上方设置在靠近侧壁的第一半导体材料的顶表面的部分之上。