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1. 发明授权

US09266719B2 Methods of manufacture MEMS devices 有权
标题翻译：制造MEMS器件的方法
公开(公告)号：US09266719B2
公开(公告)日：2016-02-23
申请号：US13406069
申请日：2012-02-27
申请人： Florian Schoen , Wolfgang Raberg , Bernhard Winkler , Werner Weber
发明人： Florian Schoen , Wolfgang Raberg , Bernhard Winkler , Werner Weber
IPC分类号： H01L41/00 , B81C1/00 , H01L41/09
CPC分类号： B81C1/00182 , B81B2201/0271 , H01L41/0933 , Y10S977/732
摘要： Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.
摘要翻译：公开了微机电系统（MEMS）装置及其制造方法。在一个实施例中，MEMS器件包括第一半导体材料和设置在第一半导体材料中的至少一个沟槽，所述至少一个沟槽具有侧壁。绝缘材料层设置在第一半导体材料中的至少一个沟槽的侧壁的上部上方，以及靠近侧壁的第一半导体材料的顶表面的一部分之上。第二半导体材料或导电材料设置在至少一个沟槽内，并且至少在绝缘材料层的上方设置在靠近侧壁的第一半导体材料的顶表面的部分之上。

2. 发明授权

US07851875B2 MEMS devices and methods of manufacture thereof 有权
标题翻译： MEMS器件及其制造方法
公开(公告)号：US07851875B2
公开(公告)日：2010-12-14
申请号：US12013174
申请日：2008-01-11
申请人： Florian Schoen , Wolfgang Raberg , Bernhard Winkler , Werner Weber
发明人： Florian Schoen , Wolfgang Raberg , Bernhard Winkler , Werner Weber
IPC分类号： H01L29/84
CPC分类号： B81C1/00182 , B81B2201/0271 , H01L41/0933 , Y10S977/732
摘要： Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.
摘要翻译：公开了微机电系统（MEMS）装置及其制造方法。在一个实施例中，MEMS器件包括第一半导体材料和设置在第一半导体材料中的至少一个沟槽，所述至少一个沟槽具有侧壁。绝缘材料层设置在第一半导体材料中的至少一个沟槽的侧壁的上部上方，以及靠近侧壁的第一半导体材料的顶表面的一部分之上。第二半导体材料或导电材料设置在至少一个沟槽内，并且至少在绝缘材料层的上方设置在靠近侧壁的第一半导体材料的顶表面的部分之上。

3. 发明授权

US08198690B2 MEMS devices and methods of manufacture thereof 有权
标题翻译： MEMS器件及其制造方法
公开(公告)号：US08198690B2
公开(公告)日：2012-06-12
申请号：US12853814
申请日：2010-08-10
申请人： Florian Schoen , Wolfgang Raberg , Bernhard Winkler , Werner Weber
发明人： Florian Schoen , Wolfgang Raberg , Bernhard Winkler , Werner Weber
IPC分类号： H01L29/84
CPC分类号： B81C1/00182 , B81B2201/0271 , H01L41/0933 , Y10S977/732
摘要： Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.
摘要翻译：公开了微机电系统（MEMS）装置及其制造方法。在一个实施例中，MEMS器件包括第一半导体材料和设置在第一半导体材料中的至少一个沟槽，所述至少一个沟槽具有侧壁。绝缘材料层设置在第一半导体材料中的至少一个沟槽的侧壁的上部上方，以及靠近侧壁的第一半导体材料的顶表面的一部分之上。第二半导体材料或导电材料设置在至少一个沟槽内，并且至少在绝缘材料层的上方设置在靠近侧壁的第一半导体材料的顶表面的部分之上。

4. 发明申请

US20100301434A1 MEMS Devices and Methods of Manufacture Thereof 有权
标题翻译： MEMS器件及其制造方法
公开(公告)号：US20100301434A1
公开(公告)日：2010-12-02
申请号：US12853814
申请日：2010-08-10
申请人： Florian Schoen , Wolfgang Raberg , Bernhard Winkler , Werner Weber
发明人： Florian Schoen , Wolfgang Raberg , Bernhard Winkler , Werner Weber
IPC分类号： H01L29/84 , H01L21/30
CPC分类号： B81C1/00182 , B81B2201/0271 , H01L41/0933 , Y10S977/732
摘要： Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.
摘要翻译：公开了微机电系统（MEMS）装置及其制造方法。在一个实施例中，MEMS器件包括第一半导体材料和设置在第一半导体材料中的至少一个沟槽，所述至少一个沟槽具有侧壁。绝缘材料层设置在第一半导体材料中的至少一个沟槽的侧壁的上部上方，以及靠近侧壁的第一半导体材料的顶表面的一部分之上。第二半导体材料或导电材料设置在至少一个沟槽内，并且至少在绝缘材料层的上方设置在靠近侧壁的第一半导体材料的顶表面的部分之上。

5. 发明申请

US20120164774A1 Methods of Manufacture MEMS Devices 审中-公开
标题翻译：制造MEMS器件的方法
公开(公告)号：US20120164774A1
公开(公告)日：2012-06-28
申请号：US13406069
申请日：2012-02-27
申请人： Florian Schoen , Wolfgang Raberg , Bernhard Winkler , Werner Weber
发明人： Florian Schoen , Wolfgang Raberg , Bernhard Winkler , Werner Weber
IPC分类号： H01L21/02
CPC分类号： B81C1/00182 , B81B2201/0271 , H01L41/0933 , Y10S977/732
摘要： Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.
摘要翻译：公开了微机电系统（MEMS）装置及其制造方法。在一个实施例中，MEMS器件包括第一半导体材料和设置在第一半导体材料中的至少一个沟槽，所述至少一个沟槽具有侧壁。绝缘材料层设置在第一半导体材料中的至少一个沟槽的侧壁的上部上方，以及靠近侧壁的第一半导体材料的顶表面的一部分之上。第二半导体材料或导电材料设置在至少一个沟槽内，并且至少在绝缘材料层的上方设置在靠近侧壁的第一半导体材料的顶表面的部分之上。

6. 发明申请

US20090179286A1 MEMS Devices and Methods of Manufacture Thereof 有权
标题翻译： MEMS器件及其制造方法
公开(公告)号：US20090179286A1
公开(公告)日：2009-07-16
申请号：US12013174
申请日：2008-01-11
申请人： Florian Schoen , Wolfgang Raberg , Bernhard Winkler , Werner Weber
发明人： Florian Schoen , Wolfgang Raberg , Bernhard Winkler , Werner Weber
IPC分类号： H01L29/84 , H01L21/00
CPC分类号： B81C1/00182 , B81B2201/0271 , H01L41/0933 , Y10S977/732
摘要： Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.
摘要翻译：公开了微机电系统（MEMS）装置及其制造方法。在一个实施例中，MEMS器件包括第一半导体材料和设置在第一半导体材料中的至少一个沟槽，所述至少一个沟槽具有侧壁。绝缘材料层设置在第一半导体材料中的至少一个沟槽的侧壁的上部上方，以及靠近侧壁的第一半导体材料的顶表面的一部分之上。第二半导体材料或导电材料设置在至少一个沟槽内，并且至少在绝缘材料层的上方设置在靠近侧壁的第一半导体材料的顶表面的部分之上。

7. 发明授权

US08415191B2 Integrally fabricated micromachine and logic elements 有权
标题翻译：整体制造的微机械和逻辑元件
公开(公告)号：US08415191B2
公开(公告)日：2013-04-09
申请号：US13218987
申请日：2011-08-26
申请人： Stefan Kolb , Reinhard Mahnkopf , Christian Pacha , Bernhard Winkler , Werner Weber
发明人： Stefan Kolb , Reinhard Mahnkopf , Christian Pacha , Bernhard Winkler , Werner Weber
IPC分类号： H01L29/84
CPC分类号： G01P15/08 , G01C19/56 , G01P15/097 , G01P15/125 , H01L28/40 , H01L29/785
摘要： Embodiments relate to micromachine structures. In one embodiment, a micromachine structure includes a first electrode, a second electrode, and a sensing element. The sensing element is mechanically movable and is disposed intermediate the first and second electrodes and adapted to oscillate between the first and second electrodes. Further, the sensing element includes a FinFET structure having a height and a width, the height being greater than the width.
摘要翻译：实施例涉及微机械结构。在一个实施例中，微型机械结构包括第一电极，第二电极和感测元件。感测元件是机械可移动的并且设置在第一和第二电极之间并且适于在第一和第二电极之间振荡。此外，感测元件包括具有高度和宽度的FinFET结构，高度大于宽度。

8. 发明申请

US20120061777A1 INTEGRALLY FABRICATED MICROMACHINE AND LOGIC ELEMENTS 有权
标题翻译：整体织造的MICROMACHINE和逻辑元素
公开(公告)号：US20120061777A1
公开(公告)日：2012-03-15
申请号：US13218987
申请日：2011-08-26
申请人： Stefan Kolb , Reinhard Mahnkopf , Christian Pacha , Bernhard Winkler , Werner Weber
发明人： Stefan Kolb , Reinhard Mahnkopf , Christian Pacha , Bernhard Winkler , Werner Weber
IPC分类号： H01L29/84 , H01L21/66 , H01L21/00
CPC分类号： G01P15/08 , G01C19/56 , G01P15/097 , G01P15/125 , H01L28/40 , H01L29/785
摘要： Embodiments relate to micromachine structures. In one embodiment, a micromachine structure includes a first electrode, a second electrode, and a sensing element. The sensing element is mechanically movable and is disposed intermediate the first and second electrodes and adapted to oscillate between the first and second electrodes. Further, the sensing element includes a FinFET structure having a height and a width, the height being greater than the width.
摘要翻译：实施例涉及微机械结构。在一个实施例中，微机械结构包括第一电极，第二电极和感测元件。感测元件是机械可移动的并且设置在第一和第二电极之间并且适于在第一和第二电极之间振荡。此外，感测元件包括具有高度和宽度的FinFET结构，高度大于宽度。

9. 发明授权

US08076738B2 Integrally fabricated micromachine and logic elements 有权
标题翻译：整体制造的微机械和逻辑元件
公开(公告)号：US08076738B2
公开(公告)日：2011-12-13
申请号：US11863297
申请日：2007-09-28
申请人： Stefan Kolb , Reinhard Mahnkopf , Christian Pacha , Bernhard Winkler , Werner Weber
发明人： Stefan Kolb , Reinhard Mahnkopf , Christian Pacha , Bernhard Winkler , Werner Weber
IPC分类号： H01L29/84
CPC分类号： G01P15/08 , G01C19/56 , G01P15/097 , G01P15/125 , H01L28/40 , H01L29/785
摘要： Embodiments of the invention are related to micromachine structures. In one embodiment, a micromachine structure comprises a first electrode, a second electrode, and a sensing element. The sensing element is mechanically movable and is disposed intermediate the first and second electrodes and adapted to oscillate between the first and second electrodes. Further, the sensing element comprises a FinFET structure having a height and a width, the height being greater than the width.
摘要翻译：本发明的实施例涉及微机械结构。在一个实施例中，微机械结构包括第一电极，第二电极和感测元件。感测元件是机械可移动的并且设置在第一和第二电极之间并且适于在第一和第二电极之间振荡。此外，感测元件包括具有高度和宽度的FinFET结构，高度大于宽度。

10. 发明授权

US08004682B2 Methods and systems for analyzing a volume of gas 有权
标题翻译：用于分析气体体积的方法和系统
公开(公告)号：US08004682B2
公开(公告)日：2011-08-23
申请号：US12104125
申请日：2008-04-16
申请人： Werner Weber , Rudolf Lachner
发明人： Werner Weber , Rudolf Lachner
IPC分类号： G01N21/00 , G01N27/00 , G01J1/42
CPC分类号： G01N21/3504 , G01N21/6404 , G01N2021/1793
摘要： One embodiment relates to a method for determining a concentration of a molecular species of interest. In this method, electromagnetic radiation is transmitted into a volume of gas within an output exhaust system. The transmitted electromagnetic radiation has a first intensity at a characteristic frequency that is associated with a transition of the molecular species of interest. Electromagnetic radiation is then received from the volume of gas at a second intensity. The method then correlates the first intensity to the second intensity to determine the concentration of the molecular species of interest within the volume of gas. Other methods and systems are also disclosed.
摘要翻译：一个实施方案涉及确定感兴趣的分子物质的浓度的方法。在这种方法中，电磁辐射被传输到输出排气系统内的一定体积的气体中。所发射的电磁辐射具有与感兴趣的分子物质的转变相关的特征频率的第一强度。然后以第二强度从气体体积接收电磁辐射。然后，该方法将第一强度与第二强度相关联，以确定气体体积内感兴趣的分子种类的浓度。还公开了其它方法和系统。

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