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1. 发明授权

US08962224B2 Methods for controlling defects for extreme ultraviolet lithography (EUVL) photomask substrate 有权
标题翻译：用于控制极紫外光刻（EUVL）光掩模基板的缺陷的方法
公开(公告)号：US08962224B2
公开(公告)日：2015-02-24
申请号：US13774010
申请日：2013-02-22
申请人： Banqiu Wu , Ajay Kumar , Omkaram Nalamasu
发明人： Banqiu Wu , Ajay Kumar , Omkaram Nalamasu
IPC分类号： G03F1/00
CPC分类号： G03F1/00 , G03F1/22 , G03F1/60
摘要： Methods for providing a silicon layer on a photomask substrate surface with minimum defeats for fabricating film stack thereon for EUVL applications are provided. In one embodiment, a method for forming a silicon layer on a photomask substrate includes performing an oxidation process to form a silicon oxide layer on a surface of a first substrate wherein the first substrate comprises a crystalline silicon material, performing an ion implantation process to define a cleavage plane in the first substrate, and bonding the silicon oxide layer to a surface of a second substrate, wherein the second substrate is a quartz photomask.
摘要翻译：提供了用于在光掩模衬底表面上提供硅层的方法，其中用于在EUVL应用中制造膜堆叠的最小失败。在一个实施例中，在光掩模衬底上形成硅层的方法包括在第一衬底的表面上执行氧化处理以形成氧化硅层，其中第一衬底包括结晶硅材料，执行离子注入工艺以界定在第一衬底中的解理面，并将氧化硅层接合到第二衬底的表面，其中第二衬底是石英光掩模。

2. 发明申请

US20140356768A1 CHARGED BEAM PLASMA APPARATUS FOR PHOTOMASK MANUFACTURE APPLICATIONS 审中-公开
标题翻译：用于光电子制造应用的充电光束等离子体设备
公开(公告)号：US20140356768A1
公开(公告)日：2014-12-04
申请号：US13904716
申请日：2013-05-29
申请人： Banqiu WU , Ajay KUMAR , Amitabh SABHARWAL , Leonid DORF , Ming-Feng WU , Shahid RAUF , Kartik RAMASWAMY , Kenneth S. COLLINS , Omkaram NALAMASU
发明人： Banqiu WU , Ajay KUMAR , Amitabh SABHARWAL , Leonid DORF , Ming-Feng WU , Shahid RAUF , Kartik RAMASWAMY , Kenneth S. COLLINS , Omkaram NALAMASU
IPC分类号： G03F1/80
CPC分类号： G03F1/80
摘要： Embodiments of the present invention generally provide an apparatus and methods for etching photomasks using charged beam plasma. In one embodiment, an apparatus for performing a charged beam plasma process on a photomask includes a processing chamber having a chamber bottom, a chamber ceiling and chamber sidewalls defining an interior volume, a substrate support pedestal disposed in the interior volume, a charged beam generation system disposed adjacent to the chamber sidewall, and a RF bias electrode disposed in the substrate support.
摘要翻译：本发明的实施例通常提供使用带电束等离子体蚀刻光掩模的装置和方法。在一个实施例中，用于在光掩模上执行带电束等离子体处理的装置包括具有室底部的处理室，限定内部容积的室顶板和室侧壁，设置在内部容积中的基板支撑基座，带电束产生系统，邻近室侧壁设置，RF偏置电极设置在基板支撑件中。

3. 发明授权

US07771894B2 Photomask having self-masking layer and methods of etching same 有权
标题翻译：具有自掩蔽层的光掩模及其蚀刻方法
公开(公告)号：US07771894B2
公开(公告)日：2010-08-10
申请号：US11532259
申请日：2006-09-15
申请人： Banqiu Wu
发明人： Banqiu Wu
IPC分类号： G03F1/00
CPC分类号： G03F1/80 , G03F1/30 , G03F1/58 , Y10T428/31616
摘要： A photomask structure and method of etching is provided herein. In one embodiment, a photomask includes a translucent substrate and an opaque multi-layer absorber layer disposed over the substrate. The opaque multi-layer absorber layer comprises a self-mask layer disposed over a bulk absorber layer. The self-mask layer comprises one of nitrogenized tantalum and silicon-based materials (TaSiON), tantalum boron oxide-based materials (TaBO), or oxidized and nitrogenized tantalum-based materials (TaON). The bulk absorber layer comprises on of tantalum silicide-based materials (TaSi), nitrogenized tantalum boride-based materials (TaBN), or tantalum nitride-based materials (TaN). The self-mask layer has a low etch rate during the bulk absorber layer etch step, thereby acting as a hard mask.
摘要翻译：本文提供光掩模结构和蚀刻方法。在一个实施例中，光掩模包括透光性基板和设置在基板上方的不透明多层吸收层。不透明多层吸收层包括设置在大体吸收层上的自掩模层。自掩模层包括氮化钽和硅基材料（TaSiON），钽氧化硼基材料（TaBO）或氧化和氮化的钽基材料（TaON）中的一种。本体吸收层包括硅化钽基材料（TaSi），氮化硼化钽基材料（TaBN）或氮化钽基材料（TaN）。在本体吸收层蚀刻步骤期间，自掩模层具有低蚀刻速率，由此用作硬掩模。

4. 发明申请

US20100078039A1 METHOD AND APPRATUS FOR MASK PELLICLE ADHESIVE RESIDUE CLEANING 失效
标题翻译：用于胶粘剂粘合剂残留清洁的方法和设备
公开(公告)号：US20100078039A1
公开(公告)日：2010-04-01
申请号：US12242472
申请日：2008-09-30
申请人： Banqiu Wu , Richard Lee , M. Rao Yalamanchili , Ajay Kumar , James S. Papanu , Chung-Huan Jeon
发明人： Banqiu Wu , Richard Lee , M. Rao Yalamanchili , Ajay Kumar , James S. Papanu , Chung-Huan Jeon
IPC分类号： B08B1/04 , B01J19/08 , A46B9/02 , A46B11/06
CPC分类号： B08B3/02 , B08B1/00 , B08B11/02 , G03F1/82 , Y10S134/902
摘要： Aspects of the invention generally provide methods and apparatus for cleaning adhesive residual on a photomask substrate. In one embodiment, the apparatus includes a processing cell, a support assembly configured to receive a photomask substrate disposed thereon disposed in the processing cell, a protection head assembly disposed above and facing the support assembly, and a head actuator configured to control the elevation of the protection head assembly relative to an upper surface of the support assembly. A cleaning device is provided and positioned to interact with the photomask substrate disposed on the support assembly. In another embodiment, a method of cleaning a periphery region of a photomask substrate includes providing a photomask substrate having a periphery portion and a center portion disposed on a support assembly in a processing cell, lowering a protection cover disposed in the processing cell to cover the center portion of the photomask substrate, providing a brush in the processing cell to clean the periphery portion of the photomask substrate.
摘要翻译：本发明的方面通常提供用于清洁光掩模基底上的粘合剂残留物的方法和装置。在一个实施例中，该设备包括处理单元，配置成接收布置在其上设置在处理单元中的光掩模基板的支撑组件，设置在支撑组件上方并面向支撑组件的保护头组件，以及头部致动器，保护头组件相对于支撑组件的上表面。提供清洁装置并定位成与设置在支撑组件上的光掩模基板相互作用。在另一个实施例中，一种清洁光掩模基板的外围区域的方法包括提供具有周边部分的光掩模基板和设置在处理单元中的支撑组件上的中心部分，降低设置在处理单元中的保护盖以覆盖在光掩模基板的中心部分，在处理单元中提供刷子以清洁光掩模基板的周边部分。

5. 发明申请

US20080070128A1 METHOD OF ETCHING EXTREME ULTRAVIOLET LIGHT (EUV) PHOTOMASKS 有权
标题翻译：蚀刻极光紫外光（EUV）光电子的方法
公开(公告)号：US20080070128A1
公开(公告)日：2008-03-20
申请号：US11532280
申请日：2006-09-15
申请人： Banqiu Wu , Madhavi R. Chandrachood , Ajay Kumar
发明人： Banqiu Wu , Madhavi R. Chandrachood , Ajay Kumar
IPC分类号： G03F1/00 , B44C1/22
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00
摘要： Embodiments of methods of etching EUV photomasks are provided herein. In one embodiment, a method of etching an extreme ultraviolet photomask includes providing a photomask comprising, in order, a substrate, a multi-material layer, a capping layer, and a multi-layer absorber layer, the multilayer absorber layer comprising a self-mask layer disposed over a bulk absorber layer, wherein the self-mask layer comprises tantalum and oxygen and the bulk absorber layer comprises tantalum and essentially no oxygen; etching the self-mask layer using a first etch process; and etching the bulk absorber layer using a second etch process different than the first, wherein the etch rate of the bulk absorber layer is greater than the etch rate of the self-mask layer during the second etch process.
摘要翻译：本文提供了蚀刻EUV光掩模的方法的实施例。在一个实施例中，蚀刻极紫外光掩模的方法包括提供包括依次包括基底，多材料层，覆盖层和多层吸收层的光掩模，所述多层吸收层包括自对准层，掩模层，其设置在体吸收层上，其中所述自掩模层包括钽和氧，并且所述本体吸收层包括钽并且基本上不含氧; 使用第一蚀刻工艺蚀刻自掩模层; 以及使用不同于第一蚀刻工艺的第二蚀刻工艺来蚀刻体吸收体层，其中本体吸收体层的蚀刻速率大于在第二蚀刻工艺期间自掩模层的蚀刻速率。

6. 发明授权

US06881321B2 Production, refining and recycling of lightweight and reactive metals in ionic liquids 有权
标题翻译：离子液体中重金属和活性金属的生产，精炼和回收
公开(公告)号：US06881321B2
公开(公告)日：2005-04-19
申请号：US09982190
申请日：2001-10-19
申请人： Banqiu Wu , Ramana G. Reddy , Robin D. Rogers
发明人： Banqiu Wu , Ramana G. Reddy , Robin D. Rogers
IPC分类号： C22B1/08 , C22B7/00 , C22B21/00 , C25C3/00 , C25C3/06 , C25C3/24 , C25C1/00 , C25C1/24
CPC分类号： C22B21/0038 , C22B1/08 , C22B7/002 , C25C3/00 , C25C3/06 , C25C3/24 , Y02P10/212
摘要： Lightweight and reactive metals can be produced from ore, refined from alloy, and recycled from metal matrix composites using electrolysis in electrolytes including an ionic liquid containing a metal chloride at or near room temperature. Low electric energy consumption and pollutant emission, easy operation and low production costs are achieved.
摘要翻译：重金属和活性金属可以从合金中精炼出来的矿石生产，并从金属基复合材料中回收利用电解质，包括在室温或室温附近含有金属氯化物的离子液体。电能消耗低，污染物排放低，运行方便，生产成本低。

7. 发明申请

US20160286689A1 Cooling method for a 3D IC computer system 审中-公开
公开(公告)号：US20160286689A1
公开(公告)日：2016-09-29
申请号：US14672191
申请日：2015-03-29
申请人： Banqiu Wu , Ming Xu
发明人： Banqiu Wu , Ming Xu
IPC分类号： H05K7/20
CPC分类号： H05K7/2079 , G06F1/20 , G06F1/206 , H05K7/20 , H05K7/20218 , H05K7/20709 , H05K7/20763 , H05K7/20772
摘要： A computer system using 3D IC is cooled by using liquid coolants such as water, oil, and ionic liquid. Liquid coolant flows in a closed coolant conduit which is configured thermally to contact heat-generating components and a liquid-liquid heat exchanger. The heat generated in 3D IC chips is carried out by liquid coolant and dissipated to heat exchanger where cooling water dissipates heat to large water body. For economic stable operation, cooling water is pumped from large water body such as river to a water tower where water level is kept constant to ensure heat exchanger work at optimal condition. The simple approach for computer system cooling provided in this disclosure is a cost-effective data center efficiency solution.

8. 发明申请

US20140065797A1 IN-SITU DEPOSITED MASK LAYER FOR DEVICE SINGULATION BY LASER SCRIBING AND PLASMA ETCH 审中-公开
标题翻译：用于激光扫描和等离子体蚀刻的器件结合的现场沉积掩模层
公开(公告)号：US20140065797A1
公开(公告)日：2014-03-06
申请号：US14072653
申请日：2013-11-05
申请人： Madhava Rao Yalamanchili , Wei-Sheng Lei , Brad Eaton , Saravjeet Singh , Ajay Kumar , Banqiu Wu
发明人： Madhava Rao Yalamanchili , Wei-Sheng Lei , Brad Eaton , Saravjeet Singh , Ajay Kumar , Banqiu Wu
IPC分类号： H01L21/78
CPC分类号： H01L21/78 , B23K26/0624 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/172 , B23K2103/50 , H01L21/30655 , H01L21/3086 , H01L21/67207
摘要： Methods of dicing substrates by both laser scribing and plasma etching. A method includes forming an in-situ mask with a plasma etch chamber by accumulating a thickness of plasma deposited polymer to protect IC bump surfaces from a subsequent plasma etch. Second mask materials, such as a water soluble mask material may be utilized along with the plasma deposited polymer. At least some portion of the mask is patterned with a femtosecond laser scribing process to provide a patterned mask with trenches. The patterning exposing regions of the substrate between the ICs in which the substrate is plasma etched to singulate the IC and the water soluble material layer washed off.
摘要翻译：通过激光划线和等离子体蚀刻来切割基板的方法。一种方法包括通过累积等离子体沉积聚合物的厚度来形成具有等离子体蚀刻室的原位掩模，以保护IC凸起表面免于随后的等离子体蚀刻。可以与等离子体沉积的聚合物一起使用第二掩模材料，例如水溶性掩模材料。用飞秒激光划线工艺对掩模的至少一部分进行图案化以提供具有沟槽的图案化掩模。在IC之间的衬底的图案化曝光区域中，其中衬底被等离子体蚀刻以分离IC和水溶性材料层被洗掉。

9. 发明申请

US20140045103A1 METHODS FOR CONTROLLING DEFECTS FOR EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL) PHOTOMASK SUBSTRATE 有权
标题翻译：控制超极紫外光刻（EUVL）光电子基板缺陷的方法
公开(公告)号：US20140045103A1
公开(公告)日：2014-02-13
申请号：US13774010
申请日：2013-02-22
申请人： Banqiu Wu , Ajay Kumar , Omkaram Nalamasu
发明人： Banqiu Wu , Ajay Kumar , Omkaram Nalamasu
IPC分类号： G03F1/00
CPC分类号： G03F1/00 , G03F1/22 , G03F1/60
摘要： Methods for providing a silicon layer on a photomask substrate surface with minimum defeats for fabricating film stack thereon for EUVL applications are provided. In one embodiment, a method for forming a silicon layer on a photomask substrate includes performing an oxidation process to form a silicon oxide layer on a surface of a first substrate wherein the first substrate comprises a crystalline silicon material, performing an ion implantation process to define a cleavage plane in the first substrate, and bonding the silicon oxide layer to a surface of a second substrate, wherein the second substrate is a quartz photomask.
摘要翻译：提供了用于在光掩模衬底表面上提供硅层的方法，其中用于在EUVL应用中制造膜堆叠的最小失败。在一个实施例中，在光掩模衬底上形成硅层的方法包括在第一衬底的表面上执行氧化处理以形成氧化硅层，其中第一衬底包括结晶硅材料，执行离子注入工艺以界定在第一衬底中的解理面，并将氧化硅层接合到第二衬底的表面，其中第二衬底是石英光掩模。

10. 发明申请

US20130192524A1 Continuous Substrate Processing System 有权
标题翻译：连续基板加工系统
公开(公告)号：US20130192524A1
公开(公告)日：2013-08-01
申请号：US13755891
申请日：2013-01-31
申请人： Banqiu Wu , Nag B. Patibandla , Toshiaki Fujita , Ralf Hofmann , Pravin K. Narwankar , Jeonghoon Oh , Srinivas Satya , Li-Qun Xia
发明人： Banqiu Wu , Nag B. Patibandla , Toshiaki Fujita , Ralf Hofmann , Pravin K. Narwankar , Jeonghoon Oh , Srinivas Satya , Li-Qun Xia
IPC分类号： H01L21/673
CPC分类号： H01L21/673 , C23C16/45546 , C23C16/4558 , C23C16/4584 , C23C16/54 , H01L21/67346 , H01L21/677
摘要： A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.
摘要翻译：提供一种处理室，其具有堆叠在其中的多个可移动基板载体，用于连续处理多个基板。可移动衬底载体能够从处理室的外部传送，例如从负载运送室转移到处理室中并且从处理室中输送，例如被转移到另一负载运送室中。输送到处理室中的工艺气体在空间上分离成多个处理槽，和/或在时间上被控制。处理室可以是多室衬底处理系统的一部分。

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