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1. 发明授权

US07927980B2 Method for forming a detachable substrate including implantation and exfoliation 有权
标题翻译：用于形成包括植入和剥离的可分离基材的方法
公开(公告)号：US07927980B2
公开(公告)日：2011-04-19
申请号：US11719834
申请日：2005-11-25
申请人： Aurélie Tauzin , Chrystelle Lagahe-Blanchard
发明人： Aurélie Tauzin , Chrystelle Lagahe-Blanchard
IPC分类号： H01L21/20 , H01L21/36 , H01L21/31 , H01L21/469
CPC分类号： C30B33/02 , C30B25/04 , C30B33/00 , H01L21/02381 , H01L21/02532 , H01L21/02625 , H01L21/02639 , H01L21/02647 , H01L21/02664
摘要： The invention concerns a method for forming a growth mask on the surface of an initial crystalline substrate, comprising the following steps: formation of a layer of second material on one of the faces of the initial substrate of first material, formation of a pattern in the thickness of the layer of second material so as to expose the zones of said face of the initial substrate, said zones forming growth windows on the initial substrate, the method being characterized in that the formation of the pattern is obtained by ion implantation carried out in the surface layer of the initial substrate underlying the layer of second material, the implantation conditions being such that they cause, directly or after a heat treatment, on said face of the initial substrate, the appearance of exfoliated zones of first material leading to the localized removal of the zones of second material covering the exfoliated zones of first material, thereby locally exposing the initial substrate and forming growth windows on the initial substrate.The invention further concerns methods for forming a crystalline thin film and transferring this thin film onto a host substrate.
摘要翻译：本发明涉及一种用于在初始晶体衬底的表面上形成生长掩模的方法，包括以下步骤：在第一材料的初始衬底的一个面上形成第二材料层，在第一材料的表面形成图案第二材料层的厚度以露出初始衬底的所述面的区域，所述区域在初始衬底上形成生长窗口，该方法的特征在于，通过离子注入在在第二材料层下面的初始衬底的表面层，注入条件使得它们直接或在热处理之后在初始衬底的所述表面上引起导致局部化的第一材料的剥离区域的出现去除覆盖第一材料的剥离区域的第二材料的区域，从而局部暴露初始衬底并形成g 初始底物上的第一个窗口。本发明还涉及形成结晶薄膜并将该薄膜转移到主体衬底上的方法。

2. 发明授权

US07670930B2 Method of detaching a thin film by melting precipitates 有权
标题翻译：通过熔融沉淀物分离薄膜的方法
公开(公告)号：US07670930B2
公开(公告)日：2010-03-02
申请号：US12293193
申请日：2007-03-28
申请人： Aurélie Tauzin , Bruce Faure , Arnaud Garnier
发明人： Aurélie Tauzin , Bruce Faure , Arnaud Garnier
IPC分类号： H01L21/46 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76254
摘要： A method of fabricating a thin film from a substrate includes implantation into the substrate, for example made of silicon, of ions of a non-gaseous species, for example gallium, the implantation conditions and this species being chosen, according to the material of the substrate, so as to allow the formation of precipitates confined in a certain depth, distributed within a layer, these precipitates being made of a solid phase having a melting point below that of the substrate. The method optionally further including intimate contacting of this face of the substrate with a stiffener, and detachment of a thin film by fracturing the substrate at the layer of precipitates by applying a mechanical and/or chemical detachment stress under conditions in which the precipitates are in the liquid phase.
摘要翻译：从衬底制造薄膜的方法包括将诸如由非气态物质的离子（例如镓）注入衬底中，例如由硅制成的衬底，根据材料选择植入条件和该物种底物，以便允许形成限定在一定深度内的析出物，分布在层内，这些沉淀物由熔点低于基底的固相制成。所述方法还可包括将基材的该表面与加强件紧密接触，以及通过在沉淀物处于其中的条件下施加机械和/或化学脱离应力而在沉淀层处破碎基板而分离薄膜液相。

3. 发明授权

US08693835B2 Method for transferring a thin layer by proton exchange 有权
标题翻译：通过质子交换传输薄层的方法
公开(公告)号：US08693835B2
公开(公告)日：2014-04-08
申请号：US12937945
申请日：2009-04-10
申请人： Aurélie Tauzin , Jean-Sébastien Moulet
发明人： Aurélie Tauzin , Jean-Sébastien Moulet
IPC分类号： G02B6/10
CPC分类号： C30B31/04 , C30B33/02 , H01L21/76254
摘要： A method for transferring a thin layer from a lithium-based first substrate includes proton exchange between the first substrate and a first electrolyte, which is an acid, through a free face of the first substrate so as to replace lithium ions of the first substrate by protons, in a proportion between 10% and 80%, over a first depth e1. A reverse proton exchange between the first substrate and a second electrolyte, through the free face is carried out so as to replace substantially all the protons with lithium ions over a second depth e2 smaller than the first depth e1, and so as to leave an intermediate layer between the depths e1 and e2, in which intermediate layer protons incorporated during the proton exchange step remain. The depth e2 defines a thin layer between the free face and the intermediate layer. A heat treatment is carried out under conditions suitable for embrittling the intermediate layer and the thin film is separated from the first substrate at the intermediate layer.
摘要翻译：用于从锂基第一衬底转移薄层的方法包括通过第一衬底的自由面在第一衬底和作为酸的第一电解质之间的质子交换，以便通过第一衬底的自由面来代替第一衬底的锂离子，以便代替第一衬底的锂离子质子比例在第一深度e1之间以10％至80％的比例。通过自由面进行第一衬底和第二电解质之间的反向质子交换，以便在小于第一深度e1的第二深度e2上用锂离子代替基本上所有的质子，并且留下中间体深度e1和e2之间的层，其中保留在质子交换步骤期间并入的中间层质子。深度e2限定了自由面和中间层之间的薄层。在适于脆化中间层的条件下进行热处理，并且在中间层与第一基板分离薄膜。

4. 发明申请

US20110030889A1 METHOD FOR TRANSFERRING A THIN LAYER BY PROTON EXCHANGE 有权
标题翻译：通过PROTON EXCHANGE传输薄层的方法
公开(公告)号：US20110030889A1
公开(公告)日：2011-02-10
申请号：US12937945
申请日：2009-04-10
申请人： Aurélie Tauzin , Jean-Sébastien Moulet
发明人： Aurélie Tauzin , Jean-Sébastien Moulet
IPC分类号： B32B38/10
CPC分类号： C30B31/04 , C30B33/02 , H01L21/76254
摘要： A method for transferring a thin layer from a lithium-based first substrate includes proton exchange between the first substrate and a first electrolyte, which is an acid, through a free face of the first substrate so as to replace lithium ions of the first substrate by protons, in a proportion between 10% and 80%, over a first depth e1. A reverse proton exchange between the first substrate and a second electrolyte, through the free face is carried out so as to replace substantially all the protons with lithium ions over a second depth e2 smaller than the first depth e1, and so as to leave an intermediate layer between the depths e1 and e2, in which intermediate layer protons incorporated during the proton exchange step remain. The depth e2 defines a thin layer between the free face and the intermediate layer. A heat treatment is carried out under conditions suitable for embrittling the intermediate layer and the thin film is separated from the first substrate at the intermediate layer.
摘要翻译：用于从锂基第一衬底转移薄层的方法包括通过第一衬底的自由面在第一衬底和作为酸的第一电解质之间的质子交换，以便通过第一衬底的自由面来代替第一衬底的锂离子，以便代替第一衬底的锂离子质子比例在第一深度e1之间以10％至80％的比例。通过自由面进行第一衬底和第二电解质之间的反向质子交换，以便在小于第一深度e1的第二深度e2上用锂离子代替基本上所有的质子，并且留下中间体深度e1和e2之间的层，其中保留在质子交换步骤期间并入的中间层质子。深度e2限定了自由面和中间层之间的薄层。在适于脆化中间层的条件下进行热处理，并且在中间层与第一基板分离薄膜。

5. 发明授权

US07439092B2 Thin film splitting method 有权
标题翻译：薄膜分割方法
公开(公告)号：US07439092B2
公开(公告)日：2008-10-21
申请号：US11437901
申请日：2006-05-19
申请人： Aurélie Tauzin
发明人： Aurélie Tauzin
IPC分类号： H01L21/00
CPC分类号： H01L21/76254
摘要： A method of fabricating thin films of semiconductor materials by implanting ions in a substrate composed of at least two different elements at least one of which can form a gaseous phase on bonding with itself and/or with impurities includes the following steps: (1) bombarding one face of the substrate with ions of a non-gaseous heavy species in order to implant those ions in a concentration sufficient to create in the substrate a layer of microcavities containing a gaseous phase formed by the element of the substrate; (2) bringing this face of the substrate into intimate contact with a stiffener; and (3) obtaining cleavage at the level of the microcavity layer by the application of heat treatment and/or a splitting stress.
摘要翻译：一种通过将离子注入由至少两种不同元素构成的衬底中制造半导体材料薄膜的方法，其中至少一种可以在与其自身和/或杂质结合时形成气相，包括以下步骤：（1）轰击为了将这些离子注入到足以在衬底中产生含有由衬底的元件形成的气相的微腔的一层微孔中，所述衬底具有非气态重物质的离子的一个面，（2）使基板的这个面与加强件紧密接触; 和（3）通过施加热处理和/或分裂应力在微腔层的水平获得裂纹。

6. 发明授权

US08778775B2 Method for preparing thin GaN layers by implantation and recycling of a starting substrate 有权
标题翻译：通过注入和再循环起始衬底制备薄GaN层的方法
公开(公告)号：US08778775B2
公开(公告)日：2014-07-15
申请号：US12518198
申请日：2007-12-18
申请人： Aurélie Tauzin , Jérôme Dechamp , Frédéric Mazen , Florence Madeira
发明人： Aurélie Tauzin , Jérôme Dechamp , Frédéric Mazen , Florence Madeira
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L21/02032
摘要： A method for preparing a thin layer of GaN from a starting substrate in which at least one thick surface area extending along a free face of the starting substrate includes GaN, where the method includes bombarding the free face of the substrate with helium and hydrogen atoms, the helium being implanted first into the thickness of the thick surface area and the hydrogen being implanted thereafter, and where the helium and hydrogen doses each vary between 1.1017 atoms/cm2 and 4.1017 atoms/cm2. The starting substrate is subjected to a rupture process in order to induce the separation, relative to a residue of the starting substrate, of the entire portion of the thick area located between the free face and the helium and hydrogen implantation depth. The helium is advantageously implanted in a dose at least equal to that of hydrogen, and can also be implanted alone.
摘要翻译：一种用于从起始衬底制备薄层GaN的方法，其中至少一个沿着起始衬底的自由面延伸的厚表面积包括GaN，其中该方法包括用氦和氢原子轰击衬底的自由面，首先将氦注入到厚表面积的厚度中，然后注入氢气，其中氦气和氢气剂量各自在1.1017原子/ cm 2和4.1017原子/ cm 2之间变化。对起始衬底进行破裂处理，以便相对于起始衬底的残留物，引导位于自由面和氦之间的厚区域的整个部分和氢注入深度之间的分离。氦有利地以至少等于氢的剂量注入，并且也可以单独植入。

7. 发明申请

US20100216294A1 METHOD OF FABRICATING A MICROELECTRONIC STRUCTURE INVOLVING MOLECULAR BONDING 审中-公开
标题翻译：涉及分子结合的微电子结构的方法
公开(公告)号：US20100216294A1
公开(公告)日：2010-08-26
申请号：US12682522
申请日：2008-10-10
申请人： Marc Rabarot , Christophe Dubarry , Jean-Sébastien Moulet , Aurélie Tauzin
发明人： Marc Rabarot , Christophe Dubarry , Jean-Sébastien Moulet , Aurélie Tauzin
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L21/02266 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/2007 , H01L21/31604 , H01L21/318 , H01L21/76254
摘要： Method of fabricating a microelectronic structure includes preparing a first structure having a first material different from silicon on a surface thereof and forming at least one covering layer of a second material by IBS (ion beam sputtering) and having a thickness of less than one micron, where the at least one cover layer has a free surface and molecular bonding the free surface to one face of a second structure where the at least one covering layer constitutes a bonding layer for the first and second structures.
摘要翻译：制造微电子结构的方法包括制备在其表面上具有与硅不同的第一材料的第一结构，并通过IBS（离子束溅射）形成至少一层第二材料的覆盖层，并具有小于1微米的厚度，其中所述至少一个覆盖层具有自由表面，并且将所述自由表面分子结合到所述至少一个覆盖层构成所述第一和第二结构的结合层的第二结构的一个面。

8. 发明授权

US08309431B2 Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation 有权
标题翻译：用于在植入或共同植入后通过脉动自我支持的精细层转移的方法
公开(公告)号：US08309431B2
公开(公告)日：2012-11-13
申请号：US10577175
申请日：2004-10-28
申请人： Nguyet-Phuong Nguyen , Ian Cayrefourcq , Christelle Lagahe-Blanchard , Konstantin Bourdelle , Aurélie Tauzin , Franck Fournel
发明人： Nguyet-Phuong Nguyen , Ian Cayrefourcq , Christelle Lagahe-Blanchard , Konstantin Bourdelle , Aurélie Tauzin , Franck Fournel
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： A method for self-supported transfer of a fine layer, in which at least one species of ions is implanted in a source-substrate at a specified depth in relation to the surface of the source-substrate. A stiffener is applied in intimate contact with the source-substrate and the source-substrate undergoes a heat treatment at a specified temperature during a specified period of time in order to create an embrittled buried area substantially at the specified depth without causing a thin layer, defined between the surface and the embrittled buried layer in relation to the remainder of the source-substrate, to become thermally detached. A controlled localized energy pulse is applied to the source-substrate in order to cause the self-supported detachment of the thin layer.
摘要翻译：一种用于自支撑转移细层的方法，其中将至少一种离子注入相对于源 - 衬底表面的指定深度的源极 - 衬底中。施加加强件以与源 - 基板紧密接触，并且源 - 基板在特定时间段内在特定温度下进行热处理，以便在基本上在指定深度处产生脆弱的掩埋区域而不产生薄层，相对于源极 - 基板的其余部分，在表面和脆化的掩埋层之间限定为热分离。将受控的局部能量脉冲施加到源 - 衬底，以引起薄层的自支撑分离。

9. 发明申请

US20100025228A1 Method for Preparing Thin GaN Layers by Implantation and Recycling of a Starting Substrate 有权
标题翻译：通过植入和回收起始衬底制备薄GaN层的方法
公开(公告)号：US20100025228A1
公开(公告)日：2010-02-04
申请号：US12518198
申请日：2007-12-18
申请人： Aurélie Tauzin , Jérôme Dechamp , Frédéric Mazen , Florence Madeira
发明人： Aurélie Tauzin , Jérôme Dechamp , Frédéric Mazen , Florence Madeira
IPC分类号： C23C14/32
CPC分类号： H01L21/76254 , H01L21/02032
摘要： A method for preparing a thin layer of GaN from a starting substrate in which at least one thick surface area extending along a free face of the starting substrate includes GaN, where the method includes bombarding the free face of the substrate with helium and hydrogen atoms, the helium being implanted first into the thickness of the thick surface area and the hydrogen being implanted thereafter, and where the helium and hydrogen doses each vary between 1.1017 atoms/cm2 and 4.1017 atoms/cm2. The starting substrate is subjected to a rupture process in order to induce the separation, relative to a residue of the starting substrate, of the entire portion of the thick area located between the free face and the helium and hydrogen implantation depth. The helium is advantageously implanted in a dose at least equal to that of hydrogen, and can also be implanted alone.
摘要翻译：一种用于从起始衬底制备薄层GaN的方法，其中至少一个沿着起始衬底的自由面延伸的厚表面积包括GaN，其中该方法包括用氦和氢原子轰击衬底的自由面，首先将氦注入到厚表面积的厚度中，然后注入氢气，其中氦气和氢气剂量各自在1.1017原子/ cm 2和4.1017原子/ cm 2之间变化。对起始衬底进行破裂处理，以便相对于起始衬底的残留物，引导位于自由面和氦之间的厚区域的整个部分和氢注入深度之间的分离。氦有利地以至少等于氢的剂量注入，并且也可以单独植入。

10. 发明授权

US07588997B2 Method of fabricating a thin film 有权
标题翻译：薄膜制造方法
公开(公告)号：US07588997B2
公开(公告)日：2009-09-15
申请号：US11504295
申请日：2006-08-14
申请人： Aurélie Tauzin , Sébastien Personnic , Frédéric Laugier
发明人： Aurélie Tauzin , Sébastien Personnic , Frédéric Laugier
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254
摘要： A method of fabricating a thin film is disclosed. The method comprises: implanting ions by bombarding a face of a substrate comprising a semiconductor material to form a concentrated layer of the implanted ions at a predetermined mean depth in the substrate, the concentrated layer and the face of the substrate defining a thin film therebetween; trapping contaminants included in the substrate or the thin film, in the concentrated layer by heat treating the substrate such that the heat treatment does not split the substrate at the concentrated layer; detaching the thin film from the substrate after the trapping by splitting the substrate at the concentrated layer; and withdrawing a zone of the thin film perturbed by the trapping and the detaching.
摘要翻译：公开了制造薄膜的方法。该方法包括：通过轰击包含半导体材料的衬底的表面来注入离子，以在衬底中以预定的平均深度形成注入的离子的浓缩层，衬底的浓缩层和衬底在其间限定薄膜; 通过对基板进行热处理使得热处理不使基板在浓缩层分裂，从而在浓缩层中捕获包含在基板或薄膜中的污染物; 通过在浓缩层分裂衬底，在捕获之后从衬底上分离出薄膜; 并且通过捕获和分离取出被薄膜干扰的区域。

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