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1. 发明授权

US08693835B2 Method for transferring a thin layer by proton exchange 有权
标题翻译：通过质子交换传输薄层的方法
公开(公告)号：US08693835B2
公开(公告)日：2014-04-08
申请号：US12937945
申请日：2009-04-10
申请人： Aurélie Tauzin , Jean-Sébastien Moulet
发明人： Aurélie Tauzin , Jean-Sébastien Moulet
IPC分类号： G02B6/10
CPC分类号： C30B31/04 , C30B33/02 , H01L21/76254
摘要： A method for transferring a thin layer from a lithium-based first substrate includes proton exchange between the first substrate and a first electrolyte, which is an acid, through a free face of the first substrate so as to replace lithium ions of the first substrate by protons, in a proportion between 10% and 80%, over a first depth e1. A reverse proton exchange between the first substrate and a second electrolyte, through the free face is carried out so as to replace substantially all the protons with lithium ions over a second depth e2 smaller than the first depth e1, and so as to leave an intermediate layer between the depths e1 and e2, in which intermediate layer protons incorporated during the proton exchange step remain. The depth e2 defines a thin layer between the free face and the intermediate layer. A heat treatment is carried out under conditions suitable for embrittling the intermediate layer and the thin film is separated from the first substrate at the intermediate layer.
摘要翻译：用于从锂基第一衬底转移薄层的方法包括通过第一衬底的自由面在第一衬底和作为酸的第一电解质之间的质子交换，以便通过第一衬底的自由面来代替第一衬底的锂离子，以便代替第一衬底的锂离子质子比例在第一深度e1之间以10％至80％的比例。通过自由面进行第一衬底和第二电解质之间的反向质子交换，以便在小于第一深度e1的第二深度e2上用锂离子代替基本上所有的质子，并且留下中间体深度e1和e2之间的层，其中保留在质子交换步骤期间并入的中间层质子。深度e2限定了自由面和中间层之间的薄层。在适于脆化中间层的条件下进行热处理，并且在中间层与第一基板分离薄膜。

2. 发明申请

US20110030889A1 METHOD FOR TRANSFERRING A THIN LAYER BY PROTON EXCHANGE 有权
标题翻译：通过PROTON EXCHANGE传输薄层的方法
公开(公告)号：US20110030889A1
公开(公告)日：2011-02-10
申请号：US12937945
申请日：2009-04-10
申请人： Aurélie Tauzin , Jean-Sébastien Moulet
发明人： Aurélie Tauzin , Jean-Sébastien Moulet
IPC分类号： B32B38/10
CPC分类号： C30B31/04 , C30B33/02 , H01L21/76254
摘要： A method for transferring a thin layer from a lithium-based first substrate includes proton exchange between the first substrate and a first electrolyte, which is an acid, through a free face of the first substrate so as to replace lithium ions of the first substrate by protons, in a proportion between 10% and 80%, over a first depth e1. A reverse proton exchange between the first substrate and a second electrolyte, through the free face is carried out so as to replace substantially all the protons with lithium ions over a second depth e2 smaller than the first depth e1, and so as to leave an intermediate layer between the depths e1 and e2, in which intermediate layer protons incorporated during the proton exchange step remain. The depth e2 defines a thin layer between the free face and the intermediate layer. A heat treatment is carried out under conditions suitable for embrittling the intermediate layer and the thin film is separated from the first substrate at the intermediate layer.
摘要翻译：用于从锂基第一衬底转移薄层的方法包括通过第一衬底的自由面在第一衬底和作为酸的第一电解质之间的质子交换，以便通过第一衬底的自由面来代替第一衬底的锂离子，以便代替第一衬底的锂离子质子比例在第一深度e1之间以10％至80％的比例。通过自由面进行第一衬底和第二电解质之间的反向质子交换，以便在小于第一深度e1的第二深度e2上用锂离子代替基本上所有的质子，并且留下中间体深度e1和e2之间的层，其中保留在质子交换步骤期间并入的中间层质子。深度e2限定了自由面和中间层之间的薄层。在适于脆化中间层的条件下进行热处理，并且在中间层与第一基板分离薄膜。

3. 发明申请

US20100216294A1 METHOD OF FABRICATING A MICROELECTRONIC STRUCTURE INVOLVING MOLECULAR BONDING 审中-公开
标题翻译：涉及分子结合的微电子结构的方法
公开(公告)号：US20100216294A1
公开(公告)日：2010-08-26
申请号：US12682522
申请日：2008-10-10
申请人： Marc Rabarot , Christophe Dubarry , Jean-Sébastien Moulet , Aurélie Tauzin
发明人： Marc Rabarot , Christophe Dubarry , Jean-Sébastien Moulet , Aurélie Tauzin
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L21/02266 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/2007 , H01L21/31604 , H01L21/318 , H01L21/76254
摘要： Method of fabricating a microelectronic structure includes preparing a first structure having a first material different from silicon on a surface thereof and forming at least one covering layer of a second material by IBS (ion beam sputtering) and having a thickness of less than one micron, where the at least one cover layer has a free surface and molecular bonding the free surface to one face of a second structure where the at least one covering layer constitutes a bonding layer for the first and second structures.
摘要翻译：制造微电子结构的方法包括制备在其表面上具有与硅不同的第一材料的第一结构，并通过IBS（离子束溅射）形成至少一层第二材料的覆盖层，并具有小于1微米的厚度，其中所述至少一个覆盖层具有自由表面，并且将所述自由表面分子结合到所述至少一个覆盖层构成所述第一和第二结构的结合层的第二结构的一个面。

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