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1. 发明授权

US07588997B2 Method of fabricating a thin film 有权
标题翻译：薄膜制造方法
公开(公告)号：US07588997B2
公开(公告)日：2009-09-15
申请号：US11504295
申请日：2006-08-14
申请人： Aurélie Tauzin , Sébastien Personnic , Frédéric Laugier
发明人： Aurélie Tauzin , Sébastien Personnic , Frédéric Laugier
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254
摘要： A method of fabricating a thin film is disclosed. The method comprises: implanting ions by bombarding a face of a substrate comprising a semiconductor material to form a concentrated layer of the implanted ions at a predetermined mean depth in the substrate, the concentrated layer and the face of the substrate defining a thin film therebetween; trapping contaminants included in the substrate or the thin film, in the concentrated layer by heat treating the substrate such that the heat treatment does not split the substrate at the concentrated layer; detaching the thin film from the substrate after the trapping by splitting the substrate at the concentrated layer; and withdrawing a zone of the thin film perturbed by the trapping and the detaching.
摘要翻译：公开了制造薄膜的方法。该方法包括：通过轰击包含半导体材料的衬底的表面来注入离子，以在衬底中以预定的平均深度形成注入的离子的浓缩层，衬底的浓缩层和衬底在其间限定薄膜; 通过对基板进行热处理使得热处理不使基板在浓缩层分裂，从而在浓缩层中捕获包含在基板或薄膜中的污染物; 通过在浓缩层分裂衬底，在捕获之后从衬底上分离出薄膜; 并且通过捕获和分离取出被薄膜干扰的区域。

2. 发明申请

US20070212852A1 Method of fabricating a thin film 有权
标题翻译：薄膜制造方法
公开(公告)号：US20070212852A1
公开(公告)日：2007-09-13
申请号：US11504295
申请日：2006-08-14
申请人： Aurélie Tauzin , Sébastien Personnic , Frédéric Laugier
发明人： Aurélie Tauzin , Sébastien Personnic , Frédéric Laugier
IPC分类号： H01L21/425
CPC分类号： H01L21/76254
摘要： A method of fabricating a thin film is disclosed. The method comprises: implanting ions by bombarding a face of a substrate comprising a semiconductor material to form a concentrated layer of the implanted ions at a predetermined mean depth in the substrate, the concentrated layer and the face of the substrate defining a thin film therebetween; trapping contaminants included in the substrate or the thin film, in the concentrated layer by heat treating the substrate such that the heat treatment does not split the substrate at the concentrated layer; detaching the thin film from the substrate after the trapping by splitting the substrate at the concentrated layer; and withdrawing a zone of the thin film perturbed by the trapping and the detaching.
摘要翻译：公开了制造薄膜的方法。该方法包括：通过轰击包含半导体材料的衬底的表面来注入离子，以在衬底中以预定的平均深度形成注入的离子的浓缩层，衬底的浓缩层和衬底在其间限定薄膜; 通过对基板进行热处理使得热处理不会使基板在浓缩层分裂，从而在浓缩层中捕获包含在基板或薄膜中的污染物; 通过在浓缩层分裂衬底，在捕获之后从衬底上分离出薄膜; 并且通过捕获和分离取出被薄膜干扰的区域。

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