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    • 1. 发明申请
    • Pixel Implemented Current Amplifier
    • 像素实现电流放大器
    • US20110168892A1
    • 2011-07-14
    • US11813220
    • 2005-12-19
    • Roger SteadmanGereon VogtmeierIngo HehemannSalah Eddine Ibnou QuossaiErol OezkanArmin Kemna
    • Roger SteadmanGereon VogtmeierIngo HehemannSalah Eddine Ibnou QuossaiErol OezkanArmin Kemna
    • G01J1/42
    • G01T1/2928H04N5/32H04N5/3745
    • The present invention provides a radiation sensor featuring a plurality of individual sensor elements, e.g. pixels, each of which having a radiation detection portion that is adapted to generate an electric current in response to impingement of electromagnetic radiation and a current amplifier for amplifying the photoelectric current generated by the radiation detection portion. Current amplification is therefore performed locally within each pixel of the radiation sensor itself. This local current amplification effectively allows to increase sensitivity and response of the radiation sensor and therefore enables implementation of the radiation sensor on the basis of CMOS technology. By means of the current amplification, the radiation sensor can be adapted for read-out by means of read-out devices and signal processing modules featuring distinct input specifications Further, a bias current required by the pixel implemented current amplifier is reproduced within each pixel and coupled to consecutive or adjacently arranged sensor elements or pixel, thereby providing a cascaded bias current regeneration and bias current distribution scheme.
    • 本发明提供了一种辐射传感器,其特征在于多个单独的传感器元件,例如 像素,每个具有适于响应于电磁辐射的冲击而产生电流的辐射检测部分和用于放大由辐射检测部分产生的光电流的电流放大器。 因此,电流放大在辐射传感器本身的每个像素内本地进行。 这种局部电流放大有助于增加辐射传感器的灵敏度和响应,因此可以在CMOS技术的基础上实现辐射传感器。 通过电流放大,辐射传感器可以通过读出装置和具有不同输入规格的信号处理模块进行读出。此外,像素实现的电流放大器所需的偏置电流在每个像素内被再现, 耦合到连续或相邻布置的传感器元件或像素,从而提供级联的偏置电流再生和偏置电流分配方案。