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1. 发明授权

CN1211865C 软恢复功率二极管和相关方法失效
公开(公告)号：CN1211865C
公开(公告)日：2005-07-20
申请号：CN01811785.6
申请日：2001-06-22
申请人：快捷半导体有限公司
发明人：佩文·穆拉利赫拉恩·舍诺
IPC分类号： H01L29/861
CPC分类号： H01L29/861 , H01L29/36 , Y10S257/927
摘要：一种半导体二极管包括一个第一半导体层，该半导体层包括一种具有第一导电类型的掺杂质。一个第二半导体层与第一半导体层相邻，它包括一种具有第一导电类型的掺杂质，且其掺杂浓度比第一半导体层的掺杂浓度低。与第二半导体层相邻的是一个第三半导体层，它包括一种具有第一导电类型的掺杂质，且其掺杂浓度比第二半导体层的掺杂浓度高。一个第四半导体层与第三半导体层相邻，包括一种具有第二导电类型的掺杂质。接触点分别连接到第一和第四半导体层。

2. 发明公开

CN1441968A 软恢复功率二极管和相关方法失效
公开(公告)号：CN1441968A
公开(公告)日：2003-09-10
申请号：CN01811785.6
申请日：2001-06-22
申请人：快捷半导体有限公司
发明人：佩文·穆拉利赫拉恩·舍诺
IPC分类号： H01L29/861
CPC分类号： H01L29/861 , H01L29/36 , Y10S257/927
摘要：一种半导体二极管包括一个第一半导体层，该半导体层包括一种具有第一导电类型的掺杂质。一个第二半导体层与第一半导体层相邻，它包括一种具有第一导电类型的掺杂质，且其掺杂浓度比第一半导体层的掺杂浓度低。与第二半导体层相邻的是一个第三半导体层，它包括一种具有第一导电类型的掺杂质，且其掺杂浓度比第二半导体层的掺杂浓度高。一个第四半导体层与第三半导体层相邻，包括一种具有第二导电类型的掺杂质。接触点分别连接到第一和第四半导体层。

3. 发明授权

US5930660A Method for fabricating diode with improved reverse energy characteristics 失效
标题翻译：具有改善反向能量特性的制造二极管的方法
公开(公告)号：US5930660A
公开(公告)日：1999-07-27
申请号：US953670
申请日：1997-10-17
申请人： Harold Davis
发明人： Harold Davis
IPC分类号： H01L21/329 , H01L29/06 , H01L29/861 , H01L21/22
CPC分类号： H01L29/66136 , H01L29/0661 , H01L29/8613 , Y10S257/927 , Y10S438/965
摘要： To ensure bulk breakdown when the mesa diode with a positive bevel angle is reverse biased, the diffused region is formed with thinner edge portions. This eliminates corner or edge effects which create conditions of high electric field, resulting in decreased breakdown voltage and clamping voltage levels. The edges of the surface of epitaxial region are covered with a narrow oxide layer prior to diffusion. The middle portion of the surface remains uncovered. Diffusing through the oxide results in a diffused region which is thinner along the edges of the device than in the interior region below the exposed surface portion. The oxide thickness controls the depth of the edge diffusion.
摘要翻译：为了确保当具有正斜角的台面二极管被反向偏置时的体积破坏，扩散区域形成有更薄的边缘部分。这消除了产生高电场条件的拐角或边缘效应，导致降低的击穿电压和钳位电压电平。在扩散之前，外延区域的表面的边缘被窄的氧化物层覆盖。表面的中间部分保持未被覆盖。通过氧化物的扩散导致沿着器件的边缘比在暴露表面部分下方的内部区域更薄的扩散区域。氧化物厚度控制边缘扩散的深度。

4. 发明授权

US5164804A Semiconductor device having high breakdown voltage and low resistance and method of fabricating the same 失效
标题翻译：具有高突变电压和低电阻的半导体器件及其制造方法
公开(公告)号：US5164804A
公开(公告)日：1992-11-17
申请号：US747016
申请日：1991-08-19
申请人： Tomohide Terashima
发明人： Tomohide Terashima
IPC分类号： H01L29/06 , H01L29/08 , H01L29/36 , H01L29/47 , H01L29/739 , H01L29/78 , H01L29/786 , H01L29/861 , H01L29/872
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0649 , H01L29/0657 , H01L29/36 , H01L29/7395 , H01L29/7802 , H01L29/861 , H01L29/872 , H01L29/0847 , Y10S257/927 , Y10S438/978
摘要： A P.sup.+ layer (3) and an N.sup.+ layer (1) are provided on the top and bottom surfaces of an N.sup.- layer (21), respectively. An electrode (7) is formed on the P.sup.+ layer (3), while an electrode (8) is formed on the bottom surface of the N.sup.+ layer (1). In a direction from the electrode (7) to the electrode (8), the area of the cross section of the N.sup.- layer (21) is decreased, which cross section is perpendicular to the direction. An N.sup.-- layer (22) is formed complementarily to the N.sup.- layer (21) which is decreased in cross-sectional area. When a potential applied to the electrode (8) is higher than a potential applied to the electrode (7), a depletion layer extends from a PN junction formed by the P.sup.+ layer (3) and the N.sup.- layer (21). Since the impurity concentration of the N.sup.- layer ( 21) is lower than that of the P.sup.+ layer (3), the depletion layer extends substantially to the N.sup.- layer (21). The depletion layer extending to the N.sup.- layer (21) substantially holds the voltage applied across the electrodes (7) and (8). In order to improve a breakdown voltage, the cross-sectional area of the N.sup.- layer (21) is preferably decreased exponentially. A field intensity in the depletion layer extending within the N.sup.- layer (21) hardly depends on a distance from the electrode (7) or (8).
摘要翻译：分别在N层（21）的顶表面和底表面上设置P +层（3）和N +层（1）。在P +层（3）上形成电极（7），同时在N +层（1）的底面上形成电极（8）。在从电极（7）到电极（8）的方向上，N层（21）的截面的面积减小，该截面垂直于该方向。 N层（22）与N层（21）互补形成，横截面积减小。当施加到电极（8）的电位高于施加到电极（7）的电位时，耗尽层从由P +层（3）和N层（21）形成的PN结延伸。由于N层（21）的杂质浓度低于P +层（3）的杂质浓度，所以耗尽层大致延伸到N层（21）。延伸到N层（21）的耗尽层基本上保持施加在电极（7）和（8）上的电压。为了提高击穿电压，N层（21）的截面积优选呈指数下降。在N层（21）内延伸的耗尽层中的场强几乎不依赖于距离电极（7）或（8）的距离。

5. 发明申请

WO02001643A2 SOFT RECOVERY POWER DIODE AND RELATED METHOD 审中-公开
标题翻译：软恢复功率二极管及相关方法
公开(公告)号：WO02001643A2
公开(公告)日：2002-01-03
申请号：PCT/US2001/019990
申请日：2001-06-22
IPC分类号： H01L21/329 , H01L29/861 , H01L29/00
CPC分类号： H01L29/861 , H01L29/36 , Y10S257/927
摘要： A semiconductor diode includes a first semiconductor layer including a dopant having a first conductivity type. A second semiconductor layer is adjacent the first semiconductor layer and includes a dopant having the first conductivity type and having a dopant concentration less than a dopant concentration of the first semiconductor layer. Adjacent the second semiconductor layer is a third semiconductor layer including a dopant having the first conductivity type and having a dopant concentration greater than the dopant concentration of the second semiconductor layer. A fourth semiconductor layer is adjacent the third semiconductor layer and includes a dopant of a second conductivity type. Respective contacts are connected to the first and fourth semiconductor layers.
摘要翻译：半导体二极管包括具有第一导电类型的掺杂剂的第一半导体层。第二半导体层与第一半导体层相邻并且包括具有第一导电类型并且具有小于第一半导体层的掺杂剂浓度的掺杂剂浓度的掺杂剂。与第二半导体层相邻的是第三半导体层，其包括具有第一导电类型并且掺杂剂浓度大于第二半导体层的掺杂剂浓度的掺杂剂。第四半导体层与第三半导体层相邻并且包括第二导电类型的掺杂剂。相应的触点连接到第一和第四半导体层。

6. 发明申请

WO0201643A3 SOFT RECOVERY POWER DIODE AND RELATED METHOD 审中-公开
标题翻译：软恢复功率二极管及相关方法
公开(公告)号：WO0201643A3
公开(公告)日：2002-04-18
申请号：PCT/US0119990
申请日：2001-06-22
申请人： FAIRCHILD SEMICONDUCTOR , SHENOY PRAVEEN MURALEEDHARAN
发明人： SHENOY PRAVEEN MURALEEDHARAN
IPC分类号： H01L21/329 , H01L29/861
CPC分类号： H01L29/861 , H01L29/36 , Y10S257/927
摘要： A semiconductor diode includes a first semiconductor layer including a dopant having a first conductivity type. A second semiconductor layer is adjacent the first semiconductor layer and includes a dopant having the first conductivity type and having a dopant concentration less than a dopant concentration of the first semiconductor layer. Adjacent the second semiconductor layer is a third semiconductor layer including a dopant having the first conductivity type and having a dopant concentration greater than the dopant concentration of the second semiconductor layer. A fourth semiconductor layer is adjacent the third semiconductor layer and includes a dopant of a second conductivity type. Respective contacts are connected to the first and fourth semiconductor layers.
摘要翻译：半导体二极管包括包含具有第一导电类型的掺杂剂的第一半导体层。第二半导体层与第一半导体层相邻并且包括具有第一导电类型并且具有小于第一半导体层的掺杂剂浓度的掺杂剂浓度的掺杂剂。与第二半导体层相邻的是包括具有第一导电类型并且具有比第二半导体层的掺杂剂浓度更高的掺杂剂浓度的掺杂剂的第三半导体层。第四半导体层与第三半导体层相邻并且包括第二导电类型的掺杂剂。各触点连接到第一和第四半导体层。

7. 发明授权

EP1508173B1 PHOTODIODE 有权
标题翻译：光电二极管
公开(公告)号：EP1508173B1
公开(公告)日：2006-10-18
申请号：EP03730096.9
申请日：2003-05-22
申请人： Thomson Licensing SAS
发明人： HEHEMANN, Ingo , KEMNA, Armin
IPC分类号： H01L31/101 , H01L31/0352 , H01L27/146
CPC分类号： H01L27/1463 , H01L27/14643 , H01L31/035281 , H01L31/103 , Y02E10/50 , Y10S257/927
摘要： Disclosed is a photodiode comprising a semiconductor substrate (12) that is provided with a photosensitive area (18, 24) which encompasses a space charge region (18) generating a portion of a diffusion current and a diffusion region (24) generating another portion of a diffusion current, and an insulating device (20) which at least partly delimits the diffusion region relative to an adjacent surrounding area of the semiconductor substrate. In order to lower the reduction in the photodiode bandwidth caused by the diffusion current blurring the response of the photodiode, the semiconductor substrate is provided with an insulating device which delimits the diffusion region relative to the surrounding semiconductor substrate, thereby reducing the number of charge carriers that contribute to the diffusion rate because the diffusion region in which the diffusing charge carriers are produced is reduced and because the diffusing charge carriers produced in the reduced diffusion region are sucked up by the insulating device such that said diffusing charge carriers do not contribute to the photocurrent.

8. 发明公开

EP0915521A2 High voltage MOSFET structure 审中-公开
标题翻译：高电压MOSFET结构
公开(公告)号：EP0915521A2
公开(公告)日：1999-05-12
申请号：EP98120973.7
申请日：1998-11-05
申请人： HARRIS CORPORATION
发明人： Neilson, John
IPC分类号： H01L29/78 , H01L29/06 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0623 , H01L29/0634 , H01L29/1095 , Y10S257/927
摘要： A high voltage MOSFET with low on-resistance and a method of lowering the on-resistance for a specific device breakdown voltage of a high voltage MOSFET. The MOSFET includes a blocking layer (16) of a first conductivity type having vertical sections of a second conductivity type or the blocking layer may include alternating vertical sections of a first and second conductivity type.
摘要翻译：具有低导通电阻的高压MOSFET以及针对高压MOSFET的特定器件击穿电压降低导通电阻的方法。 MOSFET包括具有第二导电类型的垂直部分的第一导电类型的阻挡层（16），或者阻挡层可以包括第一导电类型和第二导电类型的交替垂直部分。

9. 发明专利

JP2004502305A Soft recovery power diodes and related methods 有权
公开(公告)号：JP2004502305A
公开(公告)日：2004-01-22
申请号：JP2002505688
申请日：2001-06-22
申请人：フェアーチャイルドセミコンダクターコーポレイション
发明人：プラヴィーン　ムラリードハラン　シェノイ
IPC分类号： H01L21/329 , H01L29/861
CPC分类号： H01L29/861 , H01L29/36 , Y10S257/927
摘要： A semiconductor diode includes a first semiconductor layer including a dopant having a first conductivity type. A second semiconductor layer is adjacent the first semiconductor layer and includes a dopant having the first conductivity type and having a dopant concentration less than a dopant concentration of the first semiconductor layer. Adjacent the second semiconductor layer is a third semiconductor layer including a dopant having the first conductivity type and having a dopant concentration greater than the dopant concentration of the second semiconductor layer. A fourth semiconductor layer is adjacent the third semiconductor layer and includes a dopant of a second conductivity type. Respective contacts are connected to the first and fourth semiconductor layers.

10. 发明授权

EP1739756B1 Photodiode 有权
公开(公告)号：EP1739756B1
公开(公告)日：2018-10-24
申请号：EP06021766.8
申请日：2003-05-22
申请人： Thomson Licensing SAS
发明人： Hehemann, Ingo , Kemna, Armin
IPC分类号： H01L31/101 , H01L31/0352 , H01L27/144 , H01L27/146
CPC分类号： H01L27/1463 , H01L27/14643 , H01L31/035281 , H01L31/103 , Y02E10/50 , Y10S257/927

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