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    • 5. 发明申请
    • Multiple Source-Single Drain Field Effect Semiconductor Device and Circuit
    • 多源单漏极场效应半导体器件与电路
    • US20090106707A1
    • 2009-04-23
    • US11873515
    • 2007-10-17
    • Wagdi W. AbadeerAnthony R. BonaccioJoseph A. Iadanza
    • Wagdi W. AbadeerAnthony R. BonaccioJoseph A. Iadanza
    • G06F17/50
    • G06F17/5045
    • Disclosed are embodiments of a design structure for a variable-delay field effect transistor (FET) having multiple source regions that can be individually and selectively biased to provide an electrical connection to a single drain region. Delay is a function of which of the multiple source regions is/are selectively biased as well as a function of gate resistance and capacitance. Such a variable-delay FET can be incorporated into a phase adjusting circuit, which uses gate propagation delays to selectively phase adjust an input signal. The phase adjusting circuit can be tuned by incorporating non-salicided resistances and additional capacitance at various positions on the gate structure. The phase adjusting circuit can further be modified into a phase adjusting mixer circuit that enables a phase adjusted signal to be combined with an additional signal.
    • 公开了具有多个源极区域的可变延迟场效应晶体管(FET)的设计结构的实施例,其可被单独地和选择性地偏置以提供到单个漏极区域的电连接。 延迟是多个源极区域中的哪一个被选择性偏置以及栅极电阻和电容的函数的函数。 这样的可变延迟FET可以并入相位调整电路中,该相位调整电路使用栅极传播延迟来选择性地相位调整输入信号。 相位调整电路可以通过在栅极结构上的各个位置并入非水银电阻和附加电容来调节。 相位调整电路可以进一步修改为使相位调整信号与附加信号组合的相位调整混频器电路。