会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Screw tightening structure, screw and screw tightening tool
    • 螺丝紧固结构,螺丝和螺丝紧固工具
    • US08545156B2
    • 2013-10-01
    • US13377953
    • 2009-06-24
    • Akihiro KageyamaKouzou Yamamoto
    • Akihiro KageyamaKouzou Yamamoto
    • F16B35/06
    • B25B15/005F16B23/0023F16B23/003
    • A screw tightening structure includes an indented concave recess formed on a screw, and mating convex sections provided on a screw tightening tool for tightening the screw: the recess and the mating convex sections including three or more torque transfer portions, respectively, which protrude outward and are disposed at equiangular intervals for concentrically mating engagements; rotating the screw tightening tool causing the torque transfer portions of the mating convex sections to transfer a tightening torque to the screw via the torque transfer portions of the recess; under which outer circumferential edge portions of the torque transfer portions of the mating convex sections to be brought into abutting contact with sidewall of the torque transfer portions of the recess with the tightening torque being transferred to the screw via force application points Q representing resulting abutment portions.
    • 螺钉紧固结构包括形成在螺钉上的凹陷凹槽,以及设置在螺钉紧固工具上用于拧紧螺钉的配合凸部,所述凹部和配合凸部分别包括三个或更多个扭矩传递部分, 以等角间隔布置,用于同心配合接合; 使所述螺钉紧固工具旋转,使得所述配合凸部的转矩传递部分经由所述凹部的转矩传递部分将紧固扭矩传递到所述螺钉; 所述配合凸部的转矩传递部的外周缘部与所述凹部的转矩传递部的侧壁抵接接触,所述扭矩传递部的扭矩传递部通过经由施力点Q传递到所述螺钉,所述力施加点Q表示所述抵接部 。
    • 3. 发明申请
    • SCREW TIGHTENING STRUCTURE, SCREW AND SCREW TIGHTENING TOOL
    • 螺丝紧固结构,螺丝和螺丝紧固件工具
    • US20120099944A1
    • 2012-04-26
    • US13377953
    • 2009-06-24
    • Akihiro KageyamaKouzou Yamamoto
    • Akihiro KageyamaKouzou Yamamoto
    • F16B23/00B25B15/00
    • B25B15/005F16B23/0023F16B23/003
    • A screw tightening structure includes an indented concave recess formed on a screw, and mating convex sections provided on a screw tightening tool for tightening the screw: the recess and the mating convex sections including three or more torque transfer portions, respectively, which protrude outward and are disposed at equiangular intervals for concentrically mating engagements; rotating the screw tightening tool causing the torque transfer portions of the mating convex sections to transfer a tightening torque to the screw via the torque transfer portions of the recess; under which outer circumferential edge portions of the torque transfer portions of the mating convex sections to be brought into abutting contact with sidewall of the torque transfer portions of the recess with the tightening torque being transferred to the screw via force application points Q representing resulting abutment portions.
    • 螺钉紧固结构包括形成在螺钉上的凹陷凹槽,以及设置在螺钉紧固工具上用于拧紧螺钉的配合凸部,所述凹部和配合凸部分别包括三个或更多个扭矩传递部分, 以等角间隔布置,用于同心配合接合; 使所述螺钉紧固工具旋转,使得所述配合凸部的转矩传递部分经由所述凹部的转矩传递部分将紧固扭矩传递到所述螺钉; 所述配合凸部的转矩传递部的外周缘部与所述凹部的转矩传递部的侧壁抵接接触,所述扭矩传递部的扭矩传递部通过经由施力点Q传递到所述螺钉,所述力施加点Q表示所述抵接部 。
    • 6. 发明授权
    • Electron multipler and electron detector
    • 电子倍增器和电子探测器
    • US08022606B2
    • 2011-09-20
    • US12715570
    • 2010-03-02
    • Akio SuzukiEtsuo IizukaAkihiro KageyamaMotohiro Suyama
    • Akio SuzukiEtsuo IizukaAkihiro KageyamaMotohiro Suyama
    • H01J43/06
    • H01J43/246
    • An electron multiplier that can easily obtain characteristics according to a purpose is provided. By bonding a marginal portion 23 of an MCP 2 and a marginal portion 33 of an MCP 3 to each other via a conductive spacer layer 7, a gap 12 is formed between channel portions 22, 32. Therefore, when the electron multiplier is used for a purpose that requires a particularly high gain, by adjusting the thickness of the spacer layer 7, the gain can be increased by increasing the gap 12. In addition, when the electron multiplier is used for a purpose that requires an increase in gain as well as time characteristics, by adjusting the thickness of the spacer layer 7, the size of the gap 12 can be adjusted so that desired characteristics are obtained. Consequently, by only adjusting the thickness of the spacer layer 7, characteristics according to the purpose can be easily obtained.
    • 提供了可以容易地根据目的获得特性的电子倍增器。 通过经由导电间隔层7将MCP2的边缘部分23和MCP 3的边缘部分33彼此结合,在通道部分22,32之间形成间隙12.因此,当电子倍增器用于 通过调整间隔层7的厚度,需要特别高的增益的目的可以通过增加间隙12来增加增益。此外,当电子倍增器用于增加增益的目的时 作为时间特性,通过调整间隔层7的厚度,可以调节间隙12的尺寸,从而获得期望的特性。 因此,通过仅调整间隔层7的厚度,可以容易地获得根据目的的特性。
    • 7. 发明授权
    • Photomultiplier
    • 光电倍增管
    • US07602122B2
    • 2009-10-13
    • US10586498
    • 2005-02-16
    • Hiroyuki KyushimaHideki ShimoiAkihiro KageyamaKeisuke InoueMasuo Ito
    • Hiroyuki KyushimaHideki ShimoiAkihiro KageyamaKeisuke InoueMasuo Ito
    • H01J43/04
    • H01J43/08H01J9/26H01J43/04H01J43/24
    • The present invention relates to a photomultiplier of a fine structure that realizes a high multiplier efficiency. The photomultiplier comprises an outer casing whose interior is maintained at vacuum, and, in the outer case, a photocathode that emits photoelectrons in response to incident light, an electron multiplier section that performs cascade multiplication of the photoelectrons emitted from the photocathode, and an anode for taking out secondary electrons, which are generated at the electron multiplier section, are arranged. In particular, groove portions for performing cascade multiplication of electrons from the photocathode are provided in the electron multiplier section, and on the respective surfaces of each pair of wall portions that define the groove portions are provided with one or more protrusions each having a secondary electron emitting surface formed on the surface thereof.
    • 本发明涉及实现高乘法器效率的精细结构的光电倍增管。 光电倍增管包括内壳保持真空的外壳,在外壳中,响应于入射光发射光电子的光电阴极,执行从光电阴极发射的光电子的级联倍增的电子倍增器部分和阳极 用于取出在电子倍增器部分产生的二次电子。 具体而言,在电子倍增部中设置用于进行电子从光电阴极的级联倍增的槽部,在形成有槽部的各对壁部的各表面设置有一个以上的具有二次电子 在其表面上形成的发光表面。
    • 8. 发明申请
    • Photomultiplier
    • 光电倍增管
    • US20080018246A1
    • 2008-01-24
    • US10586498
    • 2005-02-16
    • Hiroyuki KyushimaHideki ShimoiAkihiro KageyamaKeisuke InoueMasuo Ito
    • Hiroyuki KyushimaHideki ShimoiAkihiro KageyamaKeisuke InoueMasuo Ito
    • H01J43/04
    • H01J43/08H01J9/26H01J43/04H01J43/24
    • The present invention relates to a photomultiplier of a fine structure that realizes a high multiplier efficiency. The photomultiplier comprises an outer casing whose interior is maintained at vacuum, and, in the outer case, a photocathode that emits photoelectrons in response to incident light, an electron multiplier section that performs cascade multiplication of the photoelectrons emitted from the photocathode, and an anode for taking out secondary electrons, which are generated at the electron multiplier section, are arranged. In particular, groove portions for performing cascade multiplication of electrons from the photocathode are provided in the electron multiplier section, and on the respective surfaces of each pair of wall portions that define the groove portions are provided with one or more protrusions each having a secondary electron emitting surface formed on the surface thereof.
    • 本发明涉及实现高乘法器效率的精细结构的光电倍增管。 光电倍增管包括内壳保持真空的外壳,在外壳中,响应于入射光发射光电子的光电阴极,执行从光电阴极发射的光电子的级联倍增的电子倍增器部分和阳极 用于取出在电子倍增器部分产生的二次电子。 具体而言,在电子倍增部中设置用于进行电子从光电阴极的级联倍增的槽部,在形成有槽部的各对壁部的各表面设置有一个以上的具有二次电子 在其表面上形成的发光表面。
    • 10. 发明授权
    • Electron tube
    • 电子管
    • US06586877B1
    • 2003-07-01
    • US09889605
    • 2001-07-19
    • Motohiro SuyamaAkihiro KageyamaMasaharu Muramatsu
    • Motohiro SuyamaAkihiro KageyamaMasaharu Muramatsu
    • H01J4000
    • H01J31/26H01J29/92H01J31/49H01J2229/922H01J2231/50068
    • In an electron tube 1, a space S between a periphery part 15b of a semiconductor device 15 and a stem 11 is filled with an insulating resin 20. The insulating resin 20 functions as a reinforcing member while the electron tube 1 is assembled under high-temperature condition, thereby preventing a bump 16 from coming off a bump connection portion 19. Since the space S is only partly closed by the resin 20, the space between the semiconductor device 15 and the stem 11 is ensured a ventilability. That is, no air reservoir is formed between an electron incidence part 15a at the center of the semiconductor device 15 and the surface C of the stem 11, whereby air expanding at high temperature does not damage the electron incidence part 15a of the back-illuminated semiconductor device 15.
    • 在电子管1中,半导体器件15的周边部分15b和杆11之间的空间S填充有绝缘树脂20.绝缘树脂20用作加强构件,而电子管1组装在高温 从而防止突起16从凸起连接部分19脱落。由于空间S仅部分地被树脂20封闭,因此确保了半导体器件15与杆11之间的空间。 也就是说,在半导体器件15的中心处的电子入射部分15a和杆11的表面C之间没有形成空气储存器,由此在高温下膨胀的空气不会损坏背照射的电子入射部分15a 半导体器件15。