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    • 5. 发明授权
    • Photomultiplier
    • 光电倍增管
    • US07602122B2
    • 2009-10-13
    • US10586498
    • 2005-02-16
    • Hiroyuki KyushimaHideki ShimoiAkihiro KageyamaKeisuke InoueMasuo Ito
    • Hiroyuki KyushimaHideki ShimoiAkihiro KageyamaKeisuke InoueMasuo Ito
    • H01J43/04
    • H01J43/08H01J9/26H01J43/04H01J43/24
    • The present invention relates to a photomultiplier of a fine structure that realizes a high multiplier efficiency. The photomultiplier comprises an outer casing whose interior is maintained at vacuum, and, in the outer case, a photocathode that emits photoelectrons in response to incident light, an electron multiplier section that performs cascade multiplication of the photoelectrons emitted from the photocathode, and an anode for taking out secondary electrons, which are generated at the electron multiplier section, are arranged. In particular, groove portions for performing cascade multiplication of electrons from the photocathode are provided in the electron multiplier section, and on the respective surfaces of each pair of wall portions that define the groove portions are provided with one or more protrusions each having a secondary electron emitting surface formed on the surface thereof.
    • 本发明涉及实现高乘法器效率的精细结构的光电倍增管。 光电倍增管包括内壳保持真空的外壳,在外壳中,响应于入射光发射光电子的光电阴极,执行从光电阴极发射的光电子的级联倍增的电子倍增器部分和阳极 用于取出在电子倍增器部分产生的二次电子。 具体而言,在电子倍增部中设置用于进行电子从光电阴极的级联倍增的槽部,在形成有槽部的各对壁部的各表面设置有一个以上的具有二次电子 在其表面上形成的发光表面。
    • 6. 发明申请
    • Photomultiplier
    • 光电倍增管
    • US20080018246A1
    • 2008-01-24
    • US10586498
    • 2005-02-16
    • Hiroyuki KyushimaHideki ShimoiAkihiro KageyamaKeisuke InoueMasuo Ito
    • Hiroyuki KyushimaHideki ShimoiAkihiro KageyamaKeisuke InoueMasuo Ito
    • H01J43/04
    • H01J43/08H01J9/26H01J43/04H01J43/24
    • The present invention relates to a photomultiplier of a fine structure that realizes a high multiplier efficiency. The photomultiplier comprises an outer casing whose interior is maintained at vacuum, and, in the outer case, a photocathode that emits photoelectrons in response to incident light, an electron multiplier section that performs cascade multiplication of the photoelectrons emitted from the photocathode, and an anode for taking out secondary electrons, which are generated at the electron multiplier section, are arranged. In particular, groove portions for performing cascade multiplication of electrons from the photocathode are provided in the electron multiplier section, and on the respective surfaces of each pair of wall portions that define the groove portions are provided with one or more protrusions each having a secondary electron emitting surface formed on the surface thereof.
    • 本发明涉及实现高乘法器效率的精细结构的光电倍增管。 光电倍增管包括内壳保持真空的外壳,在外壳中,响应于入射光发射光电子的光电阴极,执行从光电阴极发射的光电子的级联倍增的电子倍增器部分和阳极 用于取出在电子倍增器部分产生的二次电子。 具体而言,在电子倍增部中设置用于进行电子从光电阴极的级联倍增的槽部,在形成有槽部的各对壁部的各表面设置有一个以上的具有二次电子 在其表面上形成的发光表面。
    • 8. 发明申请
    • ELECTRON MULTIPLER AND ELECTRON DETECTOR
    • 电子多路器和电子探测器
    • US20100225221A1
    • 2010-09-09
    • US12715570
    • 2010-03-02
    • Akio SUZUKIEtsuo IizukaAkihiro KageyamaMotohiro Suyama
    • Akio SUZUKIEtsuo IizukaAkihiro KageyamaMotohiro Suyama
    • H01J43/06
    • H01J43/246
    • An electron multiplier that can easily obtain characteristics according to a purpose is provided. By bonding a marginal portion 23 of an MCP 2 and a marginal portion 33 of an MCP 3 to each other via a conductive spacer layer 7, a gap 12 is formed between channel portions 22, 32. Therefore, when the electron multiplier is used for a purpose that requires a particularly high gain, by adjusting the thickness of the spacer layer 7, the gain can be increased by increasing the gap 12. In addition, when the electron multiplier is used for a purpose that requires an increase in gain as well as time characteristics, by adjusting the thickness of the spacer layer 7, the size of the gap 12 can be adjusted so that desired characteristics are obtained. Consequently, by only adjusting the thickness of the spacer layer 7, characteristics according to the purpose can be easily obtained.
    • 提供了可以容易地根据目的获得特性的电子倍增器。 通过经由导电间隔层7将MCP2的边缘部分23和MCP 3的边缘部分33彼此结合,在通道部分22,32之间形成间隙12.因此,当电子倍增器用于 通过调整间隔层7的厚度,需要特别高的增益的目的可以通过增加间隙12来增加增益。此外,当电子倍增器用于增加增益的目的时 作为时间特性,通过调整间隔层7的厚度,可以调节间隙12的尺寸,从而获得期望的特性。 因此,通过仅调整间隔层7的厚度,可以容易地获得根据目的的特性。
    • 10. 发明授权
    • Electron tube
    • 电子管
    • US06583558B1
    • 2003-06-24
    • US09868883
    • 2001-06-22
    • Motohiro SuyamaAkihiro KageyamaMasaharu Muramatsu
    • Motohiro SuyamaAkihiro KageyamaMasaharu Muramatsu
    • H01J4006
    • H01J29/44H01J31/26H01L2224/48091H01L2224/73265H01L2924/10155H01L2924/00014
    • An electron tube 10 mainly includes a sleeve 12, an input plate 14 having a photocathode surface 18, a stem 16 and a CCD 20. A vacuum is provided in an interior of the electron tube 10. The CCD 20 is fixed onto the stem such that a rear surface B faces the photocathode surface 18. In the CCD 20, on a single conductive type semiconductor substrate 64, a buried layer 66, a barrier region 68, a SiO2 layer 70, a storage electrode layer 72, a transmission electrode layer 74, and a barrier electrode layer 76 are formed at their predetermined positions. A PSG film 78 is formed at an entire front surface A over these layers to flatten the surface of the CCD 20. Further, SiN film 106 mainly composed of SiN is formed above the PSG film over the entire front surface A.
    • 电子管10主要包括套管12,具有光电阴极表面18的输入板14,杆16和CCD 20.在电子管10的内部设有真空。CCD 20固定在杆上 后表面B面对光电面表面18.在CCD 20中,在单个导电型半导体衬底64上,掩埋层66,势垒区68,SiO 2层70,存储电极层72,透射电极层 74和阻挡电极层76形成在其预定位置。 在这些层的整个前表面A上形成PSG膜78,以平坦化CCD 20的表面。此外,主要由SiN构成的SiN膜106在整个前表面A上形成在PSG膜的上方。