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1. 发明申请

US20130189854A1 METHOD FOR DEPOSITING A CHLORINE-FREE CONFORMAL SIN FILM 有权
公开(公告)号：US20130189854A1
公开(公告)日：2013-07-25
申请号：US13414619
申请日：2012-03-07
申请人： Dennis Hausmann , Jon Henri , Bart van Schravendijk , Easwar Srinivasan
发明人： Dennis Hausmann , Jon Henri , Bart van Schravendijk , Easwar Srinivasan
IPC分类号： H01L21/318
CPC分类号： C23C16/345 , C23C16/45542 , C23C16/45544 , C23C16/45557 , C23C16/505 , C23C16/52 , C23C16/54 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L29/7843
摘要： Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.

2. 发明申请

US20120028478A1 VAPOR DEPOSITION OF METAL OXIDES, SILICATES AND PHOSPHATES, AND SILICON DIOXIDE 有权
标题翻译：金属氧化物，硅酸盐和磷酸盐和二氧化硅的蒸气沉积
公开(公告)号：US20120028478A1
公开(公告)日：2012-02-02
申请号：US12407556
申请日：2009-03-19
申请人： Roy G. Gordon , Jill Becker , Dennis Hausmann , Seigi Suh
发明人： Roy G. Gordon , Jill Becker , Dennis Hausmann , Seigi Suh
IPC分类号： H01L21/31
CPC分类号： H01L21/02148 , C01B13/34 , C01B25/30 , C01B25/36 , C01B33/126 , C01B33/20 , C01B33/26 , C01G25/02 , C01G27/02 , C01G35/00 , C07F9/091 , C07F9/11 , C23C16/30 , C23C16/40 , C23C16/401 , C23C16/402 , C23C16/405 , C23C16/455 , C23C16/45525 , C23C16/45531 , C23C16/45553 , H01L21/02159 , H01L21/02205 , H01L21/02271 , H01L21/3141 , H01L21/31612 , H01L28/40 , H01L29/0684 , H01L29/42364 , H01L29/517
摘要： Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
摘要翻译：金属硅酸盐或磷酸盐通过烷氧基硅烷醇或烷基磷酸盐的蒸气与活性金属酰胺，烷基或醇盐的反应沉积在加热的底物上。例如，三（叔丁氧基）硅烷醇的蒸气与四（乙基甲基氨基）铪的蒸气反应，在加热到300℃的表面上沉积硅酸铪。产物膜在整个反应器中具有非常均匀的化学计量。类似地，二异丙基磷酸盐的蒸气与双（乙基二甲基甲硅烷基）氨基锂的蒸气反应，以将磷酸锂膜沉积在加热至250℃的基板上。以交替脉冲提供蒸气产生具有非常均匀的厚度分布和优异的台阶覆盖率的相同组成。

3. 发明申请

US20100173074A1 METHOD AND APPARATUS FOR MODULATION OF PRECURSOR EXPOSURE DURING A PULSED DEPOSITION PROCESS 审中-公开
标题翻译：在脉冲沉积过程中前驱体暴露调制的方法和装置
公开(公告)号：US20100173074A1
公开(公告)日：2010-07-08
申请号：US12702747
申请日：2010-02-09
申请人： Francisco Juarez , Dennis Hausmann , Bunsen Nie , Teresa Pong , Adrianne Tipton , Patrick Van Cleemput
发明人： Francisco Juarez , Dennis Hausmann , Bunsen Nie , Teresa Pong , Adrianne Tipton , Patrick Van Cleemput
IPC分类号： C23C16/458 , C23C16/44 , C23C16/00
CPC分类号： C23C16/45523 , C23C16/45589
摘要： A method of depositing material on a substrate comprises providing a reactor with a reaction chamber having a first volume, and contacting a surface of a substrate in the reaction chamber with a first precursor at the first chamber volume to react with and deposit a first layer on the substrate. The method further includes enlarging the reaction chamber to a second, larger volume and removing undeposited first precursor and any excess reaction product to end reaction of the first precursor with the substrate.
摘要翻译：在衬底上沉积材料的方法包括提供具有第一体积的反应室的反应器，并且使反应室中的衬底的表面与第一室体积处的第一前体接触以与第一层反应并将第一层沉积在底物。该方法还包括将反应室扩大至第二较大体积并除去未沉积的第一前体和任何过量的反应产物以终止第一前体与基底的反应。

4. 发明授权

US08592328B2 Method for depositing a chlorine-free conformal sin film 有权
公开(公告)号：US08592328B2
公开(公告)日：2013-11-26
申请号：US13414619
申请日：2012-03-07
申请人： Dennis Hausmann , Jon Henri , Bart van Schravendijk , Easwar Srinivasan
发明人： Dennis Hausmann , Jon Henri , Bart van Schravendijk , Easwar Srinivasan
IPC分类号： H01L21/471 , H05H1/24
CPC分类号： C23C16/345 , C23C16/45542 , C23C16/45544 , C23C16/45557 , C23C16/505 , C23C16/52 , C23C16/54 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L29/7843
摘要： Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.

5. 发明授权

US07700155B1 Method and apparatus for modulation of precursor exposure during a pulsed deposition process 有权
标题翻译：在脉冲沉积过程中调制前体曝光的方法和装置
公开(公告)号：US07700155B1
公开(公告)日：2010-04-20
申请号：US10821092
申请日：2004-04-08
申请人： Francisco Juarez , Dennis Hausmann , Bunsen Nie , Teresa Pong , Adrianne Tipton , Patrick Van Cleemput
发明人： Francisco Juarez , Dennis Hausmann , Bunsen Nie , Teresa Pong , Adrianne Tipton , Patrick Van Cleemput
IPC分类号： C23C16/00
CPC分类号： C23C16/45523 , C23C16/45589
摘要： A method of depositing material on a substrate comprises providing a reactor with a reaction chamber having a first volume, and contacting a surface of a substrate in the reaction chamber with a first precursor at the first chamber volume to react with and deposit a first layer on the substrate. The method further includes enlarging the reaction chamber to a second, larger volume and removing undeposited first precursor and any excess reaction product to end reaction of the first precursor with the substrate.
摘要翻译：在衬底上沉积材料的方法包括提供具有第一体积的反应室的反应器，并且使反应室中的衬底的表面与第一室体积处的第一前体接触以与第一层反应并将第一层沉积在底物。该方法还包括将反应室扩大至第二较大体积并除去未沉积的第一前体和任何过量的反应产物以终止第一前体与基底的反应。

6. 发明授权

US07550851B2 Adhesion of tungsten nitride films to a silicon surface 有权
标题翻译：氮化钨膜粘附到硅表面
公开(公告)号：US07550851B2
公开(公告)日：2009-06-23
申请号：US11429567
申请日：2006-05-04
申请人： Huong T. Nguyen , Dennis Hausmann
发明人： Huong T. Nguyen , Dennis Hausmann
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/485 , H01L21/76814 , H01L21/76843 , H01L21/76856 , H01L2924/0002 , H01L2924/00
摘要： A process is described that forms a low resistivity connection between a tungsten layer and a silicon surface with high adherence of the tungsten to the silicon. The silicon surface is plasma-cleaned to remove native oxide. A very thin layer (one or more monolayers) of Si-NH2 is formed on the silicon surface, serving as an adhesion layer. A WNx layer is formed over the Si-NH2 layer, using an atomic layer deposition (ALD) process, to serve as a barrier layer. A thick tungsten layer is formed over the WNx layer by CVD. An additional metal layer (e.g., aluminum) may be formed over the tungsten layer.
摘要翻译：描述了在钨层与硅表面之间形成低电阻率连接的方法，其具有钨与硅的高附着性。硅表面被等离子体清洁以除去天然氧化物。在硅表面上形成非常薄的Si-NH 2层（一个或多个单层），作为粘合层。使用原子层沉积（ALD）工艺在Si-NH 2层上形成WNx层以用作阻挡层。通过CVD在WNx层上形成厚的钨层。可以在钨层之上形成另外的金属层（例如铝）。

7. 发明申请

US20060276033A1 Adhesion of tungsten nitride films to a silicon surface 有权
标题翻译：氮化钨膜粘附到硅表面
公开(公告)号：US20060276033A1
公开(公告)日：2006-12-07
申请号：US11146884
申请日：2005-06-06
申请人： Huong Nguyen , Dennis Hausmann
发明人： Huong Nguyen , Dennis Hausmann
IPC分类号： H01L21/4763 , H01L21/44 , H01L21/31
CPC分类号： H01L23/485 , H01L21/76814 , H01L21/76843 , H01L21/76856 , H01L2924/0002 , H01L2924/00
摘要： A process is described that forms a low resistivity connection between a tungsten layer and a silicon surface with high adherence of the tungsten to the silicon. The silicon surface is plasma-cleaned to remove native oxide. A very thin layer (one or more monolayers) of Si—NH2 is formed on the silicon surface, serving as an adhesion layer. A WNx layer is formed over the Si—NH2 layer, using an atomic layer deposition (ALD) process, to serve as a barrier layer. A thick tungsten layer is formed over the WNx layer by CVD. An additional metal layer (e.g., aluminum) may be formed over the tungsten layer.
摘要翻译：描述了在钨层与硅表面之间形成低电阻率连接的方法，其具有钨与硅的高附着性。硅表面被等离子体清洁以除去天然氧化物。在硅表面上形成非常薄的Si-NH 2层（一个或多个单层）作为粘合层。使用原子层沉积（ALD）工艺在Si-NH 2层上形成WN层x层用作阻挡层。通过CVD在WN层上形成厚的钨层。可以在钨层之上形成另外的金属层（例如铝）。

8. 发明授权

US06969539B2 Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide 有权
标题翻译：金属氧化物，硅酸盐和磷酸盐以及二氧化硅的气相沉积
公开(公告)号：US06969539B2
公开(公告)日：2005-11-29
申请号：US10381628
申请日：2001-09-28
申请人： Roy G. Gordon , Jill Becker , Dennis Hausmann , Seigi Suh
发明人： Roy G. Gordon , Jill Becker , Dennis Hausmann , Seigi Suh
IPC分类号： C23C16/42 , C07F9/09 , C07F9/11 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/314 , H01L21/316
CPC分类号： H01L21/02148 , C01B13/34 , C01B25/30 , C01B25/36 , C01B33/126 , C01B33/20 , C01B33/26 , C01G25/02 , C01G27/02 , C01G35/00 , C07F9/091 , C07F9/11 , C23C16/30 , C23C16/40 , C23C16/401 , C23C16/402 , C23C16/405 , C23C16/455 , C23C16/45525 , C23C16/45531 , C23C16/45553 , H01L21/02159 , H01L21/02205 , H01L21/02271 , H01L21/3141 , H01L21/31612 , H01L28/40 , H01L29/0684 , H01L29/42364 , H01L29/517
摘要： Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris-(ter-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. supplying the vapors in alternating pulse produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
摘要翻译：金属硅酸盐或磷酸盐通过烷氧基硅烷醇或烷基磷酸盐的蒸气与活性金属酰胺，烷基或醇盐的反应沉积在加热的底物上。例如，三（叔丁氧基）硅烷醇的蒸气与四（乙基甲基氨基）铪的蒸气反应，在加热至300℃的表面上沉积硅酸铪。产物膜在整个反应器中具有非常均匀的化学计量。类似地，二异丙基磷酸盐的蒸气与双（乙基二甲基甲硅烷基）氨基锂的蒸气反应，以将磷酸锂膜沉积在加热至250℃的基底上，以交替脉冲提供蒸气，产生具有非常均匀的厚度分布和优异的台阶覆盖率的相同组成。

9. 发明申请

US20140051262A9 METHODS FOR UV-ASSISTED CONFORMAL FILM DEPOSITION 有权
标题翻译：紫外辅助合成膜沉积的方法
公开(公告)号：US20140051262A9
公开(公告)日：2014-02-20
申请号：US13472282
申请日：2012-05-15
申请人： Adrien Lavoie , Bhadri Varadarajan , Jon Henri , Dennis Hausmann
发明人： Adrien Lavoie , Bhadri Varadarajan , Jon Henri , Dennis Hausmann
IPC分类号： H01L21/318
CPC分类号： H01L21/02167 , C23C16/325 , C23C16/45536 , H01L21/02126 , H01L21/0214 , H01L21/0217 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/02277 , H01L21/0228
摘要： Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.
摘要翻译：描述了在衬底上制备包括含碳和/或含氧膜如SiCN（也称为SiNC），SiON和SiONC膜的氮化硅（SiN）材料和其它含硅膜的方法。根据各种实施方案，所述方法涉及一种或多种反应物的电磁辐射辅助活化。在某些实施方案中，例如，该方法涉及蒸气相胺共反应物的紫外（UV）活化。该方法可用于在低于约400℃的温度下沉积含硅膜，包括SiN和SiCN膜。

10. 发明授权

US08563414B1 Methods for forming conductive carbon films by PECVD 有权
标题翻译：通过PECVD形成导电碳膜的方法
公开(公告)号：US08563414B1
公开(公告)日：2013-10-22
申请号：US12766721
申请日：2010-04-23
申请人： Keith Fox , Dennis Hausmann
发明人： Keith Fox , Dennis Hausmann
IPC分类号： C23C8/54 , C23C14/28
CPC分类号： C23C16/26 , C23C16/505
摘要： Conductive carbon films having a resistivity of less than about 0.2 Ohm-cm, preferably less than about 0.05 Ohm-cm, are deposited by PECVD. Conductive carbon films are essentially free of sp3-hybridized carbon and contain predominantly sp2 carbon, based on IR spectral features. Carbon content of the films is at least about 75% atomic C. Conductive carbon films may contain hydrogen, but are typically hydrogen-poor, containing less than about 20% H. In some embodiments, conductive carbon films further contain nitrogen (N). For example, conductive films having a CxHyNz composition, where nitrogen is present at between about 5-10% atomic, have both high conductivity and low roughness, because introduction of nitrogen delays formation of crystallites in the film. The films are deposited at a process temperature of at least about 620° C., and at a pressure of less than about 20 Torr in a dual-frequency plasma process dominated by low frequency (LF) plasma.
摘要翻译：通过PECVD沉积电阻率小于约0.2欧姆 - 厘米，优选小于约0.05欧姆 - 厘米的导电碳膜。基于IR光谱特征，导电碳膜基本上不含sp3杂化碳并主要含有sp2碳。膜的碳含量为至少约75％原子C.导电碳膜可能含有氢，但通常为氢贫，含量小于约20％H.在一些实施方案中，导电碳膜还含有氮（N）。例如，由于氮的引入会延缓薄膜中的微晶形成，所以具有C 5 H 10 Nz组成的导电膜，其中氮存在于约5-10％原子之间，具有高导电性和低粗糙度。在由低频（LF）等离子体主导的双频等离子体工艺中，膜的至少约620℃的处理温度和小于约20托的压力下沉积。

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