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1. 发明授权

US08481121B2 Methods of forming thin metal-containing films by chemical phase deposition 有权
标题翻译：通过化学相沉积法形成含薄金属膜的方法
公开(公告)号：US08481121B2
公开(公告)日：2013-07-09
申请号：US12670023
申请日：2008-07-24
申请人： Ravi Kanjolia , Rajesh Odedra , Neil Boag , David Weyburne
发明人： Ravi Kanjolia , Rajesh Odedra , Neil Boag , David Weyburne
IPC分类号： C23C16/06 , C23C16/16
CPC分类号： C23C16/16 , C07F17/02 , C23C16/18 , C23C16/45525
摘要： Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C10-alkyl; X is C1-C10-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.
摘要翻译：提供通过化学相沉积，特别是原子层沉积（ALD）和化学气相沉积（CVD）形成含薄金属的膜的方法。所述方法包括将至少一种有机金属前体递送至底物，其中所述至少一种前体在结构上对应于式（II）; 其中：M是Ru，Fe或Os; R是C 1 -C 10 - 烷基; X是C 1 -C 10 - 烷基; 并且n为零，1,2,3,4或5.进一步提供了制备本文所述前体的方法。

2. 发明申请

US20130041170A1 ALKYL-SUBSTITUTED ALLYL CARBONYL METAL COMPLEXES AND USE THEREOF FOR PREPARING DIELECTRIC THIN FILMS 有权
标题翻译：烷基取代的亚乙基碳金属复合物及其制备电介质薄膜的用途
公开(公告)号：US20130041170A1
公开(公告)日：2013-02-14
申请号：US13569906
申请日：2012-08-08
申请人： Rajesh Odedra , Neil Boag , Jeff Anthis , Ravi Kanjolia , Mark Saly
发明人： Rajesh Odedra , Neil Boag , Jeff Anthis , Ravi Kanjolia , Mark Saly
IPC分类号： C07F13/00 , H01L21/02 , C23C16/44 , C23C16/40 , C23C16/50
CPC分类号： C07F13/00 , C23C16/18 , C23C16/40 , C23C16/45553 , H01L21/02142 , H01L21/02175 , H01L21/02271 , H01L21/0228 , H01L21/28562 , H01L21/76841
摘要： Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted η3-allyl)(carbonyl)metal complexes.
摘要翻译：有机金属络合物及其在薄膜沉积中的应用，如CVD和ALD。有机金属络合物是（烷基取代的和3-烯丙基）（羰基）金属络合物。

3. 发明授权

US08927748B2 Alkyl-substituted allyl carbonyl metal complexes and use thereof for preparing dielectric thin films 有权
标题翻译：烷基取代的烯丙基羰基金属络合物及其用于制备电介质薄膜的用途
公开(公告)号：US08927748B2
公开(公告)日：2015-01-06
申请号：US13569906
申请日：2012-08-08
申请人： Rajesh Odedra , Neil Boag , Jeff Anthis , Ravi Kanjolia , Mark Saly
发明人： Rajesh Odedra , Neil Boag , Jeff Anthis , Ravi Kanjolia , Mark Saly
IPC分类号： C07F13/00 , C23C16/00 , C23C16/18 , C23C16/40 , C23C16/455 , H01L21/02 , H01L21/285 , H01L21/768
CPC分类号： C07F13/00 , C23C16/18 , C23C16/40 , C23C16/45553 , H01L21/02142 , H01L21/02175 , H01L21/02271 , H01L21/0228 , H01L21/28562 , H01L21/76841
摘要： Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted η3-allyl)(carbonyl)metal complexes.
摘要翻译：有机金属络合物及其在薄膜沉积中的应用，如CVD和ALD。有机金属络合物是（烷基取代的和3-烯丙基）（羰基）金属络合物。

4. 发明申请

US20110165780A1 METHODS OF FORMING RUTHENIUM-CONTAINING FILMS BY ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：通过原子沉积法形成含金属薄膜的方法
公开(公告)号：US20110165780A1
公开(公告)日：2011-07-07
申请号：US12992268
申请日：2009-05-29
申请人： Ravi Kanjolia , Rajesh Odedra , Jeff Anthis , Neil Boag
发明人： Ravi Kanjolia , Rajesh Odedra , Jeff Anthis , Neil Boag
IPC分类号： H01L21/314
CPC分类号： C23C16/16 , C23C16/45525
摘要： A method of forming ruthenium-containing films by atomic layer deposition is provided. The method comprises delivering at least one precursor to a substrate, the at least one precursor corresponding in structure to Formula I: (L)Ru(CO)3 wherein L is selected from the group consisting of a linear or branched C2-C6-alkenyl and a linear or branched C1-6-alkyl; and wherein L is optionally substituted with one or more substituents independently selected from the group consisting of C2-C6-alkenyl, C1-6-alkyl, alkoxy and NR1R2; wherein R1 and R2 are independently alkyl or hydrogen.
摘要翻译：提供了通过原子层沉积形成含钌膜的方法。所述方法包括将至少一种前体递送至底物，所述至少一种前体在结构上相应于式I：（L）Ru（CO）3，其中L选自直链或支链的C 2 -C 6 - 烯基和直链或支链C 1-6 - 烷基; 并且其中L任选被一个或多个独立地选自C 2 -C 6 - 烯基，C 1-6 - 烷基，烷氧基和NR 1 R 2的取代基取代; 其中R1和R2独立地是烷基或氢。

5. 发明申请

US20180291503A2 METAL COMPLEXES CONTAINING AMIDOIMINE LIGANDS 审中-公开
公开(公告)号：US20180291503A2
公开(公告)日：2018-10-11
申请号：US15032559
申请日：2014-10-24
申请人： Ravi KANJOLIA , Shaun GARRATT , David THOMPSON , Jeffrey ANTHIS
发明人： Ravi KANJOLIA , Shaun GARRATT , David THOMPSON , Jeffrey ANTHIS
IPC分类号： C23C16/455 , C07F13/00 , C23C16/18 , C23C16/34 , C23C16/40 , H01L21/285
CPC分类号： C23C16/45553 , C07C251/08 , C07F13/005 , C23C16/18 , C23C16/34 , C23C16/40 , H01L21/28556 , H01L21/28568
摘要： Metal complexes containing one or more amidoimine ligands, methods of making such metal complexes, and methods of using such metal complexes to prepare metal-containing films are provided.

6. 发明申请

US20130210241A1 Precursors for Plasma Activated Conformal Film Deposition 有权
标题翻译：等离子体激活保形膜沉积的前体
公开(公告)号：US20130210241A1
公开(公告)日：2013-08-15
申请号：US13409212
申请日：2012-03-01
申请人： Adrien LaVoie , Mark J. Saly , Daniel Moser , Rajesh Odedra , Ravi Kanjolia
发明人： Adrien LaVoie , Mark J. Saly , Daniel Moser , Rajesh Odedra , Ravi Kanjolia
IPC分类号： H01L21/31 , H01L21/3065 , C23C16/50
CPC分类号： C23C16/52 , C23C16/045 , C23C16/345 , C23C16/4554 , C23C16/45553 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/0234 , H01L21/02348 , H01L21/31116 , H01L21/76826 , H01L21/76829 , H01L21/76837 , H01L21/76898
摘要： A method of depositing a film on a substrate surface includes providing a substrate in a reaction chamber; selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)diethylsilane, tris(dimethylamido) silylazide, tris(dimethylamido)silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis(dimethylamido)disilazane; introducing the silicon-containing reactant in vapor phase into the reaction chamber under conditions allowing the silicon-containing reactant to adsorb onto the substrate surface; introducing a second reactant in vapor phase into the reaction chamber while the silicon-containing reactant is adsorbed on the substrate surface, and wherein the second reactant is introduced without first sweeping the silicon-containing reactant out of the reaction chamber; and exposing the substrate surface to plasma to drive a reaction between the silicon-containing reactant and the second reactant on the substrate surface to form the film.
摘要翻译：在衬底表面上沉积膜的方法包括在反应室中提供衬底; 从二叔丁基重氮基硅烷，双（乙基甲基氨基）硅烷，双（二异丙基氨基）硅烷，双（叔丁基肼基）二乙基硅烷，三（二甲基氨基）甲硅烷基叠氮化物，三（二甲基氨基）甲硅烷基酰胺，乙基硅氧烷三氮化物，二异丙基氨基硅烷和六（二甲基氨基）二硅氮烷; 在允许含硅反应物吸附到基材表面上的条件下，将含硅反应物气相引入反应室; 将所述含硅反应物吸附在所述基材表面上的情况下，将气相中的第二反应物引入所述反应室，并且其中引入所述第二反应物而不先将所述含硅反应物从所述反应室中排出; 并将衬底表面暴露于等离子体以驱动衬底表面上的含硅反应物和第二反应物之间的反应以形成膜。

7. 发明申请

US20120177845A1 HIGH MOLECULAR WEIGHT ALKYL-ALLYL COBALTTRICARBONYL COMPLEXES AND USE THEREOF FOR PREPARING DIELECTRIC THIN FILMS 有权
标题翻译：高分子量的碱金属络合钴配合物及其制备介质薄膜的应用
公开(公告)号：US20120177845A1
公开(公告)日：2012-07-12
申请号：US13388861
申请日：2010-07-27
申请人： Rajesh Odedra , Neil Boag , Jeff Anthis , Ravi Kanjolia
发明人： Rajesh Odedra , Neil Boag , Jeff Anthis , Ravi Kanjolia
IPC分类号： C23C16/44 , C23C16/50 , C23C16/34 , C07F15/06
CPC分类号： C07F15/06 , C23C16/406 , C23C16/45553
摘要： A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R1 and R2 are independently C2-C8-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously.
摘要翻译：提供了一种通过气相沉积工艺形成含钴薄膜的方法。该方法包括使用至少一种在结构上对应于式（I）的前体; 其中R 1和R 2独立地为C 2 -C 8 - 烷基; x为零，1或2; y为0或1; 其中x和y两者不能同时为零。

8. 发明授权

US08476467B2 Organometallic precursors for use in chemical phase deposition processes 有权
标题翻译：用于化学相沉积工艺的有机金属前体
公开(公告)号：US08476467B2
公开(公告)日：2013-07-02
申请号：US12670022
申请日：2008-07-24
申请人： Ravi Kanjolia , Rajesh Odedra , Neil Boag
发明人： Ravi Kanjolia , Rajesh Odedra , Neil Boag
IPC分类号： C07F17/02
CPC分类号： C23C16/45525 , C07F17/02 , C23C16/16 , C23C16/18
摘要： An organometallic precursor is provided. The precursor corresponds in structure to Formula I: Cp(R)nM(CO)2(X) (Formula I) wherein: M is Ru, Fe or Os; R is C1-C10-alkyl; X is C1-C10-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).
摘要翻译：提供有机金属前体。前体在结构上对应于式I：Cp（R）nM（CO）2（X）（式I）其中：M是Ru，Fe或Os; R是C 1 -C 10 - 烷基; X是C 1 -C 10 - 烷基; 并且n为1,2,3,4或5.前体可用于化学相沉积工艺，例如原子层沉积（ALD）和化学气相沉积（CVD）。

9. 发明申请

US20100261350A1 METHODS OF FORMING THIN METAL-CONTAINING FILMS BY CHEMICAL PHASE DEPOSITION 有权
标题翻译：通过化学相沉积法形成含金属薄膜的方法
公开(公告)号：US20100261350A1
公开(公告)日：2010-10-14
申请号：US12670023
申请日：2008-07-24
申请人： Ravi Kanjolia , Rajesh Odedra , Neil Boag , David Weyburne
发明人： Ravi Kanjolia , Rajesh Odedra , Neil Boag , David Weyburne
IPC分类号： H01L21/285 , C07F15/00
CPC分类号： C23C16/16 , C07F17/02 , C23C16/18 , C23C16/45525
摘要： Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C10-alkyl; X is C1-C10-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.
摘要翻译：提供通过化学相沉积，特别是原子层沉积（ALD）和化学气相沉积（CVD）形成含薄金属的膜的方法。所述方法包括将至少一种有机金属前体递送至底物，其中所述至少一种前体在结构上对应于式（II）; 其中：M是Ru，Fe或Os; R是C 1 -C 10 - 烷基; X是C 1 -C 10 - 烷基; 并且n为零，1,2,3,4或5.进一步提供了制备本文所述前体的方法。

10. 发明授权

US09297071B2 Solid precursor delivery assemblies and related methods 有权
标题翻译：固体前体输送组件及相关方法
公开(公告)号：US09297071B2
公开(公告)日：2016-03-29
申请号：US13504838
申请日：2010-10-21
申请人： Ravi Kanjolia , Chris Platts , Nam Nguyen , Mark Wilkinson
发明人： Ravi Kanjolia , Chris Platts , Nam Nguyen , Mark Wilkinson
IPC分类号： C23C14/24 , C23C16/448
CPC分类号： C23C16/4483 , C23C14/243 , C23C16/4481 , Y10T137/0318 , Y10T137/4891 , Y10T137/7976 , Y10T137/8122 , Y10T137/8622
摘要： A solid precursor delivery assembly generally includes a container having upper and lower portions and chambers defined within the container, including an inlet chamber, an outlet chamber, and first and second precursor chambers. The first and second precursor chambers are configured for holding precursor material within the container. Sintered frits are fixedly coupled and sealed to an interior portion of the container, and define at least part of the chambers within the container. At least one of the sintered frits is configured for retaining precursor material thereon within the first precursor chamber, and at least one of the sintered frits is configured for retaining precursor material thereon within the second precursor chamber. An inlet is coupled to the container for delivering carrier gas into the container, and an outlet is coupled to the container for use in removing vaporized precursor material and carrier gas from the container.
摘要翻译：固体前体输送组件通常包括具有限定在容器内的上部和下部和室的容器，包括入口室，出口室以及第一和第二前体室。第一和第二前体室被配置用于将前体材料保持在容器内。烧结玻璃料被固定地联接并密封到容器的内部，并且限定容器内的至少一部分室。烧结的玻璃料中的至少一个被配置用于将第一前体室内的前体材料保持在其上，并且至少一个烧结的玻璃料构造成用于在第二前体室内保留前体材料。入口耦合到容器以将载气输送到容器中，并且出口连接到容器以用于从容器中除去汽化的前体材料和载气。

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