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81. 实用新型

JPS5326931Y1 失效
公开(公告)号：JPS5326931Y1
公开(公告)日：1978-07-08
申请号：JP9894473
申请日：1973-08-23
IPC分类号： H01L21/768 , H01L21/331 , H01L23/522 , H01L29/40 , H01L29/70 , H01L29/73 , H01L23/54 , H01L29/50

82. 发明专利

JPS5316274B1 失效
公开(公告)号：JPS5316274B1
公开(公告)日：1978-05-31
申请号：JP1009671
申请日：1971-02-27
IPC分类号： H01L21/28 , H01L21/31 , H01L29/72 , H01L29/50

83. 发明专利

JPS5245196B2 失效
公开(公告)号：JPS5245196B2
公开(公告)日：1977-11-14
申请号：JP419175
申请日：1974-12-28
IPC分类号： H01L29/73 , H01L21/00 , H01L21/3205 , H01L21/331 , H01L21/74 , H01L21/76 , H01L21/763 , H01L23/52 , H01L23/535 , H01L27/00 , H01L29/417 , H01L21/90 , H01L29/50

84. 实用新型

JPS5134209Y1 失效
公开(公告)号：JPS5134209Y1
公开(公告)日：1976-08-24
申请号：JP7342868
申请日：1968-08-26
IPC分类号： H01L29/73 , H01L21/331 , H01L29/08 , H01L29/50

85. 实用新型

JPS4621934Y1 失效
公开(公告)号：JPS4621934Y1
公开(公告)日：1971-07-29
申请号：JP5761768
申请日：1968-07-06
IPC分类号： H01L29/08 , H01L21/86 , H01L27/04 , H01L29/50 , H01L29/72

86. 发明公开

EP0361455A3 Color cathode ray tube apparatus 失效
标题翻译：彩色阴极射线管装置
公开(公告)号：EP0361455A3
公开(公告)日：1992-12-30
申请号：EP89117890.7
申请日：1989-09-27
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Shimoma, Taketoshi Intellectual Property Division , Kamohara, Eiji Intellectual Property Division , Sugawara, Shigeru Intellectual Property Division , Shimokobe, Jiro Intellectual Property Division
IPC分类号： H01L29/50 , H01J29/51
CPC分类号： H01J29/51 , H01J29/503 , H01J2229/4865 , H01J2229/4872 , H01J2229/4875 , H01J2229/4879 , H01J2229/4896
摘要： A color cathode ray tube apparatus is provided with an electron gun (62, 112, 162, 212) which has a common large-aperture electron lens on which three electron beams are incident. Since the electron gun has individual electron lenses for individual electron beams, the electron beams can be properly converged and focused on a screen (66, 116, 166, 216). Thus, the apparatus enjoys a satisfactory picture characteristic.

87. 发明公开

EP0123936A1 Semiconductor device 有权
标题翻译： Halbleiterbauelement。
公开(公告)号：EP0123936A1
公开(公告)日：1984-11-07
申请号：EP84103566.0
申请日：1984-03-30
申请人： HITACHI, LTD.
发明人： Horiuchi, Masatada , Yamaguchi, Ken
IPC分类号： H01L29/08 , H01L29/50 , H01L27/08 , H01L29/62
CPC分类号： H01L29/0847 , H01L21/2257 , H01L21/823835 , H01L27/0927 , H01L29/41783 , H01L29/456 , H01L29/66575 , H01L29/66628
摘要： Disclosed is a semiconductor device, especially MISFET, which can ensure high breakdown voltage and operate at high speed. The source and drain regions (5, 6; 24, 25) have an impurity concentration not exceeding 10 20 cm -3 , and on the surface of the impurity regions there is a metal silicide layer (12, 214) with a very thin, highly conductive layer (13) formed underneath the silicide. In the case of CMOS, the impurity concentration of the n-type drain or source regions (24, 25) does not exceed 10 20 cm -3 whereas the impurity concentration of an p-type drain or source regions does not exceed 10 19 cm -3 and at least one portion (214) of the drain or source region (24,25) is made of a metal silicide, thereby effectively preventing the latch-up phenomenon. The characteristics of the MISFET may be further improved by having a gate sidewall insulator of a high dielectric constant.
摘要翻译：公开了一种可以确保高击穿电压并以高速运行的半导体器件，尤其是MISFET。源区和漏区（5,6; 24,25）的杂质浓度不超过10 2 cm -3，在杂质区的表面上有金属硅化物层（ 12,214），其具有形成在硅化物下方的非常薄的高导电层（13）。在CMOS的情况下，n型漏极或源极区（24,25）的杂质浓度不超过10 2 cm -3，而p型漏极的杂质浓度或源极区域不超过10 9 cm -3且漏极或源极区域（24,25）的至少一部分（214）由金属硅化物制成，从而有效地防止了闭锁现象。通过具有高介电常数的栅极侧壁绝缘体可以进一步改善MISFET的特性。

88. 发明专利

JPH06310538A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06310538A
公开(公告)日：1994-11-04
申请号：JP9174193
申请日：1993-04-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： IKEDA KANICHIRO
IPC分类号： H01L29/417 , H01L21/338 , H01L29/812 , H01L29/50
摘要： PURPOSE:To raise mechanical strength of a fine T-shaped gate of a small gate resistance and to improve reliability of an element in a manufacturing method of a semiconductor device having a process for forming a gate electrode of a T-shaped cross section inside a recess. CONSTITUTION:As for a T-shaped gate electrode formation, a first recess 1a is formed in advance by using a recess pattern formation resist 4. Then, the resist 4 is removed and a lower layer resist 6 with an opening is laminated inside the recess 1a and an upper layer resist 7 is laminated on the resist 6. Gate metal is deposited using the resists 6, 7 as a mask and a gate electrode 8 is formed by lift-off. Thereby, it is possible to eliminate disconnection and peeling of a gate and to improve reliability of an element.

89. 发明专利

JPH0697415A SOLID-STATE IMAGE SENSING DEVICE 失效
公开(公告)号：JPH0697415A
公开(公告)日：1994-04-08
申请号：JP24630192
申请日：1992-09-16
申请人： MATSUSHITA ELECTRONICS CORP
发明人： MIZOUCHI CHIHIRO
IPC分类号： H01L27/148 , H01L29/417 , H01L29/50
摘要： PURPOSE:To make it possible to increase a charge transfer capacity of a transfer electrode next to a charge detection part without degrading charge transfer efficiency. CONSTITUTION:A first transfer electrode 2A which is adjacent to a charge detection part 1 is formed in the shape of an arc. Due to this. a maximum transfer distance of signal charges in a lower part of the first transfer electrode 2A in a charge transfer channel 9 is equivalent to a gate length of the first transfer electrode 2A and the gate length is increased more than required, which serves to protect the transfer efficiency of the first transfer electrode 2A on its lower part from being degraded. In addition to that, a part connected to the charge detection part 1 in the charge transfer channel 9 is formed to keep the same width with the other parts in the charge detection channel 9. Therefore, this construction increases a transfer capacity of signal charges compared with the charge transfer channel 9 which is reduced in tapered shape in a part connected to the charge detection part.

90. 发明专利

JPH0653250A SCHOTTKY TYPE FIELD EFFECT TRANSISTOR 失效
公开(公告)号：JPH0653250A
公开(公告)日：1994-02-25
申请号：JP20635692
申请日：1992-08-03
申请人： NEC CORP
发明人： MORIKAWA HIROSHI
IPC分类号： H01L29/872 , H01L21/338 , H01L29/417 , H01L29/47 , H01L29/812 , H01L29/48 , H01L29/50
摘要： PURPOSE:To make it possible to increase an output power by increasing a current between a drain and a source when a high frequency voltage is applied to a gate and decreasing the density of the levels having a slow time constant existing at the interface of an active layer by the formation of a metallic film having a Schottky contact with the active layer between a gate electrode and a drain electrode. CONSTITUTION:A gate electrode 2 formed in Schottky contact with an active layer 1 of the surface portion of a compound semiconductor substrate 9 is provided together with a source electrode 4s and a drain electrode 4d formed in ohmic contact with the active layer 1 at a predetermined distance between them on both sides of the gate electrode 2. In such an FET, a metal film 5 in Schottky contact with the active layer 1 is formed between the gate electrode 2 and the drain electrode 4d. For instance, the gate electrode 2 made of WSix is formed on the N-type active layer 1 on the surface portion of a semi- insulation GaAs substrate 9, and the metal layer 5 such as WSix is formed on the N type active layer 1 between the gate electrode 2 and N layer 3d on at the side of the drain electrode 4d.

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