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81. 发明专利

JP2743761B2 失效
公开(公告)号：JP2743761B2
公开(公告)日：1998-04-22
申请号：JP5986393
申请日：1993-03-19
IPC分类号： G01B5/28 , G01B7/34 , G01B21/30 , G01N27/00 , G01N37/00 , G01Q10/04 , G01Q20/02 , G01Q30/02 , G01Q30/04 , G01Q60/04 , G01Q60/10 , G01Q60/24 , G11B9/14 , H01J37/28

82. 发明专利

JPH1078438A CANTILEVER 失效
公开(公告)号：JPH1078438A
公开(公告)日：1998-03-24
申请号：JP23307496
申请日：1996-09-03
申请人： OLYMPUS OPTICAL CO
发明人： MATSUYAMA KATSUHIRO , TODA AKITOSHI , MOMIYAMA NATSUE , HIJINO MASAMICHI
IPC分类号： G01B21/30 , G01N37/00 , G01Q60/04 , G01Q60/16 , G01Q60/38 , G01Q70/14
摘要： PROBLEM TO BE SOLVED: To obtain a cantilever in which the wear resistance and the adhesion of a metal thin film formed on the surface of a probe are enhanced by a method wherein a surface layer which comprises a prescribed physical property is formed on the face on the side of the probe part. SOLUTION: At the final stage of the formation of a cantilever 18, metal thin films 8a, 8b are vacuum-deposited onto both faces of a cantilever base member 18' by using a metal material which is conductive and oxidation- resistant. At this time, the cantilever is set on a holder 24 at an ion implantation apparatus, the inside of a vacuum chamber is set to a vacuum state, a prescribed element which is taken into a palsma chamber 30 from an intake port is changed into a plasma, and a prescribed voltage is applied. At this time, when a shutter 32 is opened at a prescribed timing, ions which are accelerated by the applied voltage are discharged to the direciton of the cantilever 18 on the holder 24 which is being turned, and the ions are implanted into the metal thin film 8a on the side of a probe part 6. Thereby, crystals in the metal thin film 8a are collapsed, their density is increased, and their hardness is increased.

83. 发明专利

JPH08161778A INFORMATION PROCESSOR 失效
公开(公告)号：JPH08161778A
公开(公告)日：1996-06-21
申请号：JP32988894
申请日：1994-12-05
申请人： CANON KK
发明人： TAKEDA TOSHIHIKO , MATSUDA HIROSHI
IPC分类号： G01N37/00 , G01Q10/04 , G01Q60/04 , G01Q60/10 , G01Q60/24 , G01Q60/26 , G01Q80/00 , G11B9/04 , G11B9/14 , H01J37/28
摘要： PURPOSE: To obtain an information processor in which the resolution of a probe is enhanced by a method wherein a frictional force generated at a time when the probe is scanned in a state that a probe tip has been brought close to, or brought into contact with, a medium is reduced by applying a voltage across the probe and the medium. CONSTITUTION: A reverse-potential signal from a reverse-potential-signal application means 108 is applied across a probe 101 and a medium 104 so as to offset a potential-difference signal generated across the probe 101 and the medium 104. When a potential difference generated in the generation process of dynamic friction is reduced in this manner, a frictional force which is generated across a probe tip 103 and a recording face or a sample face 105 can be reduced. As a result, the resolution of the probe and the reliability of a recording and reproducing operation can be enhanced, and the power consumption of an information processor can be reduced sharply.

84. 发明专利

JPH0762259B2 失效
公开(公告)号：JPH0762259B2
公开(公告)日：1995-07-05
申请号：JP21514190
申请日：1990-08-16
IPC分类号： G01B7/34 , B44C1/22 , B81C1/00 , C03C15/00 , C23F1/00 , G01N27/00 , G01Q60/04 , G01Q70/16 , H01J37/28 , H01L21/306 , H01L41/09

85. 发明专利

JPH0783607A CONTROL METHOD FOR SCAN TYPE PROBE MICROSCOPE 失效
公开(公告)号：JPH0783607A
公开(公告)日：1995-03-28
申请号：JP23139993
申请日：1993-09-17
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KADO HIROYUKI , YAMAMOTO SHINICHI , TODA TAKAO
IPC分类号： G01B7/34 , G01B21/30 , G01Q10/06 , G01Q60/04 , G01Q60/10 , G01Q60/24 , H01J37/28
摘要： PURPOSE:To provide a control method for a scanning probe microscope wherein both an interatomic farce microscope image and a scanning tunnelling microscope image are obtained with the same probe at the same time. CONSTITUTION:At measurement points on a material surface, a bias voltage is applied between a conductive needle tip 1 and a material surface 4, and while they are made to relatively came near each other, the tunnelling current flowing between them is measured, and a position of the conductive needle tip 1 in the direction of Z-axis, at the time the value is a specified value, is taken as scanning tunnelling microscope data. Then, the bias voltage is cut off and the conductive needle tip 1 is brought into contact with the material surface 4, and deflection amount at a free end of a cantilever 3 is measured so that the displacement amount of the cantilever 3 in the direction of Z-axis, at the time the displacement amount is a specified value, is taken as interatomic force microscope data.

86. 发明专利

JPH06181031A MANUFACTURE OF METAL FOIL MADE PART OF PROBE 失效
公开(公告)号：JPH06181031A
公开(公告)日：1994-06-28
申请号：JP19244392
申请日：1992-07-20
申请人： ALPHA ELECTRONICS , YOKOGAWA ELECTRIC CORP
发明人： ZAMA MATSUO , SUMA HIDEYUKI , OYA AKIRA , NANKO TOMOAKI
IPC分类号： G01B21/30 , G01N37/00 , G01Q60/04 , G01Q60/10 , G01Q60/16 , G01Q60/24 , G01Q60/38 , G01Q60/40 , H01J9/02 , H01J9/14 , H01J37/28
摘要： PURPOSE:To stabilize the detection of tunnel current, to improve the performance of AFM operation and at the same time facilitate handling and the like, at a low price, by making metal foil of specific mum in each of thickness and length into cantilever-like parts of a probe and fixing a metallic block thereto. CONSTITUTION:A bonding agent 2 is applied to a ceramic substrate 1 and then is semi-dried, and platinum foil 3 of several mum in thickness is overlapped thereupon and pressed from top and bottoms with metal plates 4 to be made flat, and then photoresist is applied to the upper surface of the foil 3. Next, a plurality of patterns are exposed to light and then developed to form a masking layer 5, and after platinum foil 3a is formed by etching, the substrate 1 is cut. Successively, the foil 3a and a metal block 7 are soldered together, and then a layer 2a of a bonding agent is dissolved in an organic solvent 9 to separate the foil 3a from a substrate 1a and the foil 3a is drawn up to clean up the solvent 9 with substitution of alcohol and then the foil 3a is dried for completion, thereby making it feasible to stably detect tunnel current and to improve the performance of AFM operation, so that the parts of a probe which facilitate handling and the like may be obtained.

87. 发明专利

JPH04233128A PRECISION INSTRUMENT SENSOR FOR PROFIL MEASUREMENT OF AFM/STM/MFM AND ITS MANUFACTURE 失效
公开(公告)号：JPH04233128A
公开(公告)日：1992-08-21
申请号：JP13600791
申请日：1991-05-10
申请人： IBM
发明人： TOOMASU ENUEMUENU BAIYAA , YOOHAN ENUEMUENU GURESHINAA
IPC分类号： G01Q70/10 , B44C1/22 , B81C1/00 , C03C15/00 , C23F4/00 , G01B7/34 , G01B21/30 , G01Q60/04 , G01Q60/08 , G01Q60/16 , G01Q60/38 , G01Q70/16 , H01J9/14 , H01J37/00 , H01J37/28 , H01L21/306
摘要： PURPOSE: To precisely, efficiently manufacture a micro-cantilever beam having highly flexible chip by a mask process, a photolithography process, an etching process, and an oxidizing process. CONSTITUTION: A composite process mask of a cantilever beam 41 and a chip 61 is gradually transferred to a wafer substrate 1 by reactive ion etching, and the side wall of the chip 61 etched and formed in an anisotropic etching process is formed in a recessed shape. Oxidizing fronts 8 are made in a contact state each other at very thin parts of chip shafts in a heat oxidizing process, an oxidized material is removed by using buffer hydrofluoric acid in a stripping process to correct the height and the tapered angle of the chip 61. Thereby, forming of a chip shape with high flexibility is made possible.

88. 发明专利

JPH0427805A INTERATOMIC FORCE MICROSCOPE 失效
公开(公告)号：JPH0427805A
公开(公告)日：1992-01-30
申请号：JP13143390
申请日：1990-05-23
申请人： TOSHIBA CORP
发明人： HAYASHI MASAKAZU , ISHIDA FUMIHIKO , YASUNAGA TAMIYOSHI
IPC分类号： G01B7/34 , G01Q20/00 , G01Q60/04 , G01Q60/10 , G01Q60/16 , G01Q60/38 , H01J37/28
摘要： PURPOSE:To omit the alignment of a cantilever by providing an interatomic- force detecting chip and a tunnel-current detecting chip on both surfaces of the main body of the cantilever, and providing a planar tunnel-current substrate at a position facing the tunnel-current detecting chip. CONSTITUTION:A cantilever 20 which is provided with an interatomic force detecting chip 22 and a tunnel-current detecting chip 23 is provided. A tunnel current substrate 25 which is formed in a planar state is arranged. Therefore, it is satisfactory when the tunnel-current detecting chip 23 of the cantilever 20 faces in the plane of the tunnelling current substrate 25, and it is not necessary to perform special alignment.

89. 发明专利

JPH03277903A SCANNING TYPE PROBE MICROSCOPE 失效
公开(公告)号：JPH03277903A
公开(公告)日：1991-12-09
申请号：JP7956690
申请日：1990-03-27
申请人： MORITA SEIZO , SUGAWARA YASUHIRO , OLYMPUS OPTICAL CO
发明人： MORITA SEIZO , SUGAWARA YASUHIRO , OKADA TAKAO
IPC分类号： G01B7/34 , G01B21/30 , G01N37/00 , G01Q60/04 , G01Q60/10 , G01Q60/24 , H01J37/28
摘要： PURPOSE:To enable a three-dimensional image (AFM image) based on a sample surface and that (STM image) based on a conductive distribution on the sample surface to be measured simultaneously by allowing an amount of displacement when atom force which acts upon an area between the sample and a cantilever is constant and current which flows between the sample surface and the cantilever to be detected independently. CONSTITUTION:When measurement starts by allowing gap between a sample 1 and a cantilever 2 to be smaller, a force between atoms is generated between a tip atom of a chip 2a of the lever 2 and the approaching sample 1 and the entire lever 2 is displaced due to deflection. Also, a drive voltage is applied to a piezoelectric actuator 3 and feedback operation is performed by a servo control means 7 so that the amount of displacement of the lever 2 is maintained. Further, a bias voltage is generated 4 at the level 2 and a tunnel current iS which flows between the chip 2a and the sample 1 is current-detected 5. When the sample 1 is scanned in XY direction, an output signal IA from a means for detecting amount of probe displacement 6 or a feedback signal IPA which is applied to the actuator 3 are recorded matching the scanning signal, thus enabling ATM and STM images to be displayed simultaneously.

90. 发明专利

JPH03104136A METHOD OF MAKING SUPERFINE SILICON CHIP 失效
公开(公告)号：JPH03104136A
公开(公告)日：1991-05-01
申请号：JP20532990
申请日：1990-08-03
申请人： IBM
发明人： TOMASU BAIERU , YOHAN GURESHIYUNAA , IBUSU MAACHIN , HERUGA BUAISU , HEMANTA KEI UITSUKURAMASHINGU , ORAAFU BUORUTAA
IPC分类号： G01B7/34 , G01B21/30 , G01N27/00 , G01Q10/04 , G01Q60/04 , G01Q60/16 , G01Q60/38 , G01Q70/10 , H01J37/28 , H01L21/00 , H01L21/66
摘要： PURPOSE: To provide a satisfactory hyperfine tip by forming a mask pattern on a mask layer, forming a tip rod through etching, making the rod thin through isotropic wet etching and removing a mask. CONSTITUTION: As a material, a silicon wafer 1 coated with a dioxide silicon layer 2 is used, a photoresist layer is installed on the layer 2, and the required mask pattern is formed. Next, the dioxide silicon mask 2 is transferred into the deep part of silicon 1 by anisotropic etching. Corresponding to the depth of etching, the length of a rod 3 at the section to become the tip is determined. The side wall of the rod 3 is covered with a side wall redeposited layer 4, and this is removed by isotropic wet etching. At the same time, a conical base part 5 of the rod 3 for etching is formed and stability is mechanically improved. Next, by removing the mask 2 through dip etching using buffer hydrofluoric acid, the tip having a rectangular cross section can be provided.

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