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81. 发明授权

US08211500B2 Copper film deposition method 有权
标题翻译：铜膜沉积法
公开(公告)号：US08211500B2
公开(公告)日：2012-07-03
申请号：US10591476
申请日：2005-02-25
申请人： Yasuhiko Kojima , Naoki Yoshii
发明人： Yasuhiko Kojima , Naoki Yoshii
IPC分类号： C23C16/00
CPC分类号： H01L21/28562 , C23C16/18 , C23C16/452 , C23C16/45529 , C23C16/45553
摘要： A Cu film is deposited on a substrate by ALD (Atomic Layer Deposition) process, in which: a Cu-carboxyl acid complex or a derivative thereof having a high vapor pressure and wettability to a base is used in a gasified state; H2 is used as a reductive gas; and a step of adsorbing a source material gas to a substrate and a step of forming a Cu film by reducing the adsorbed gas with a reductive gas are repeated alternately. With this method, a conformal Cu film having excellent quality can be formed.
摘要翻译：通过ALD（原子层沉积）方法将Cu膜沉积在基板上，其中：在气化状态下使用具有高蒸气压和对碱的润湿性的Cu-羧酸络合物或其衍生物; H2用作还原气体; 并且将源材料气体吸附到基板的步骤和通过用还原气体还原吸附气体形成Cu膜的步骤交替地重复。通过这种方法，可以形成具有优良品质的共形Cu膜。

82. 发明申请

US20120064247A1 METHOD FOR FORMING CU FILM, AND STORAGE MEDIUM 审中-公开
标题翻译：形成薄膜的方法和储存介质
公开(公告)号：US20120064247A1
公开(公告)日：2012-03-15
申请号：US13229142
申请日：2011-09-09
申请人： Kenji Hiwa , Yasuhiko Kojima
发明人： Kenji Hiwa , Yasuhiko Kojima
IPC分类号： C23C16/06 , B05C11/00
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/18 , H01L21/76876 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A film-forming source material composed of a Cu complex is supplied to a wafer, which is kept at a relatively high first temperature and has a Ru film as a film-forming base film, and initial nuclei of Cu are formed on the wafer. Then, the film-forming source material composed of the Cu complex is supplied to the wafer kept at a relatively low second temperature, and Cu is deposited on the wafer having the initial nuclei of Cu formed thereon.
摘要翻译：将由Cu络合物构成的成膜源材料供给到保持在较高的第一温度的晶片，并且具有Ru膜作为成膜基膜，并且在晶片上形成Cu的初始核。然后，将由Cu络合物构成的成膜源材料供给到保持在相对较低的第二温度的晶片，并且在其上形成有初始的Cu核的晶片上沉积Cu。

83. 发明授权

US08129271B2 Film forming method, film forming apparatus and storage medium 失效
标题翻译：成膜方法，成膜装置和储存介质
公开(公告)号：US08129271B2
公开(公告)日：2012-03-06
申请号：US12374216
申请日：2007-07-17
申请人： Yasuhiko Kojima , Taro Ikeda , Tatsuo Hatano
发明人： Yasuhiko Kojima , Taro Ikeda , Tatsuo Hatano
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： C23C16/18 , H01L21/28556 , H01L21/76877 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A film forming method is provided with a substrate placing step wherein a substrate is placed in a process chamber in an airtight status; a first film forming step wherein the process chamber is supplied with water vapor and a material gas including an organic compound of copper, and an adhered layer of copper is formed on the substrate; an exhaust step wherein the water vapor and the material gas in the process chamber are exhausted; and a second film forming step wherein the process chamber is resupplied with only the material gas and a copper film is further formed on the adhered layer.
摘要翻译：一种成膜方法具有基板放置步骤，其中将基板以气密状态放置在处理室中; 第一成膜步骤，其中处理室被供应水蒸汽和包含铜的有机化合物的原料气体，并且在基板上形成铜的附着层; 排气步骤，其中处理室中的水蒸汽和原料气体被排出; 以及第二成膜步骤，其中处理室仅用原料气体再供给，并且在附着层上进一步形成铜膜。

84. 发明授权

US07827932B2 Vaporizer and processor 有权
标题翻译：蒸发器和处理器
公开(公告)号：US07827932B2
公开(公告)日：2010-11-09
申请号：US11813878
申请日：2006-01-13
申请人： Yasuhiko Kojima , Tomohisa Hoshino
发明人： Yasuhiko Kojima , Tomohisa Hoshino
IPC分类号： C23C16/448 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4482 , C23C16/18
摘要： A vaporizer vaporizes a force-fed liquid source material in a depressurized atmosphere to generate a source gas and discharging the source gas together with a carrier gas. The vaporizer includes a liquid reservoir chamber for temporarily storing the force-fed liquid source material; and a vaporization chamber communicating with the liquid reservoir chamber via a valve port. Further, the vaporizer includes a valve body adapted to sit on a valve seat surrounding the valve port of the liquid reservoir chamber; an actuator for driving the valve body; a carrier gas injection hole formed at a side of the valve body facing the valve port; and a discharge port for discharging the source gas from the vaporization chamber. By virtue of a specific arrangement of the carrier gas injection hole, the liquid source material is prevented from remaining unvaporized at a downstream side of the valve port.
摘要翻译：蒸发器在减压气氛中蒸发受力液体源材料以产生源气体并且与载气一起排出源气体。蒸发器包括用于临时存储受力液体源材料的储液室; 以及通过阀口与液体储存室连通的蒸发室。此外，蒸发器包括适于坐在围绕液体储存室的阀口的阀座上的阀体; 用于驱动阀体的致动器; 形成在所述阀体的面向所述阀口的一侧的载气喷射孔; 以及用于从气化室排出源气体的排出口。通过载气注入孔的具体布置，防止液体源材料在阀口的下游侧未蒸发。

85. 发明授权

US07699945B2 Substrate treatment method and film forming method, film forming apparatus, and computer program 失效
标题翻译：基板处理方法和成膜方法，成膜装置和计算机程序
公开(公告)号：US07699945B2
公开(公告)日：2010-04-20
申请号：US11859490
申请日：2007-09-21
申请人： Naoki Yoshii , Koumei Matsuzawa , Yasuhiko Kojima
发明人： Naoki Yoshii , Koumei Matsuzawa , Yasuhiko Kojima
IPC分类号： C21D1/00 , H01L21/44
CPC分类号： H01L21/76846 , C23C16/0209 , C23C16/0281 , C23C16/18 , H01L21/28556 , H01L21/76838 , H01L21/76864
摘要： There is provided a substrate treatment method performed on a substrate before forming a Cu film on a surface of a base material of the substrate. In the substrate treatment method, a substrate on which a Cu film is to be formed is prepared; and a specific treatment is performed on the substrate so that a crystalline orientation of the surface of the base material of the substrate has a small lattice mismatch with the Cu film.
摘要翻译：在基板的基材的表面上形成Cu膜之前，在基板上进行基板处理方法。在基板处理方法中，准备要形成Cu膜的基板; 对基板进行特定的处理，使得基板的基材表面的结晶取向与Cu膜的晶格失配小。

86. 发明申请

US20090321936A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS, SEMICONDUCTOR DEVICE, COMPUTER PROGRAM AND STORAGE MEDIUM 有权
标题翻译：半导体器件制造方法，半导体器件制造设备，半导体器件，计算机程序和存储介质
公开(公告)号：US20090321936A1
公开(公告)日：2009-12-31
申请号：US12374097
申请日：2007-06-15
申请人： Yasuhiko Kojima , Taro Ikeda
发明人： Yasuhiko Kojima , Taro Ikeda
IPC分类号： H01L23/48 , H01L21/768 , B05C11/10
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/76831 , H01L21/76855 , H01L21/76876 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor device which has excellent adhesiveness to a copper film and a base film thereof and has a small resistance between wirings. The semiconductor device includes a porous insulating layer (SIOC film 11) which absorbed water from the atmosphere, and a substrate (wafer W) having a trench 100 formed on such insulating film is placed in a processing chamber. The substrate is coated with a first base film (Ti film 13) made of a valve metal. The surface of the first film brought into contact with the insulating film is oxidized by the water discharged from the insulating layer, and a passivation film 13a is formed. The surface of the first base film is coated with a second base film made of nitride or carbide of the valve metal, and a copper film 15 is formed on the surface of the second base film by CVD by using a copper organic compound as a material.
摘要翻译：本发明提供一种对铜膜及其基膜具有优异的粘附性并且在布线之间具有小的电阻的半导体器件。半导体器件包括从大气吸收水的多孔绝缘层（SIOC膜11），并且在该绝缘膜上形成具有形成在该绝缘膜上的沟槽100的衬底（晶片W）放置在处理室中。基板涂覆有由阀金属制成的第一基膜（Ti膜13）。与绝缘膜接触的第一膜的表面被从绝缘层排出的水氧化，形成钝化膜13a。第一基膜的表面涂覆有由阀金属的氮化物或碳化物制成的第二基膜，并且通过使用铜有机化合物作为材料通过CVD在第二基膜的表面上形成铜膜15 。

87. 发明申请

US20090000740A1 Vaporizer and Processor 有权
标题翻译：蒸发器和处理器
公开(公告)号：US20090000740A1
公开(公告)日：2009-01-01
申请号：US11813878
申请日：2006-01-13
申请人： Yasuhiko Kojima , Tomohisa Hoshino
发明人： Yasuhiko Kojima , Tomohisa Hoshino
IPC分类号： H01L21/306 , C23C16/54
CPC分类号： C23C16/4482 , C23C16/18
摘要： A vaporizer for vaporizing a force-fed liquid source material in a depressurized atmosphere to generate a source gas and discharging the source gas together with a carrier gas, the vaporizer includes a liquid reservoir chamber for temporarily storing the force-fed liquid source material; a vaporization chamber communicating with the liquid reservoir chamber via a valve port. Further the vaporizer includes a valve body adapted to sit on a vale seat surrounding the valve port of the liquid reservoir chamber; an actuator for driving the valve body; a carrier gas injection hole formed at a side of the valve body facing the valve port; and a discharge port for discharging the source gas from the vaporization chamber. By virtue of a specific arrangement of the carrier gas injection hole, the liquid source material is prevented from remaining unvaporized at a downstream side of the valve port.
摘要翻译：一种用于在减压气氛中蒸发受力液体源材料以产生源气体并与载气一起排出源气体的蒸发器，所述蒸发器包括：用于临时存储受力液体源材料的储液室; 蒸发室经由阀口与储液室连通。此外，蒸发器包括适于坐在围绕液体储存室的阀口的阀座上的阀体; 用于驱动阀体的致动器; 形成在所述阀体的面向所述阀口的一侧的载气喷射孔; 以及用于从气化室排出源气体的排出口。通过载气注入孔的具体布置，防止液体源材料在阀口的下游侧未蒸发。

88. 发明申请

US20080261146A1 Lithographic Printing Plate Precursor 失效
标题翻译：平版印刷版前体
公开(公告)号：US20080261146A1
公开(公告)日：2008-10-23
申请号：US11573733
申请日：2005-08-17
申请人： Yasuhiko Kojima
发明人： Yasuhiko Kojima
IPC分类号： G03F7/004 , G03F7/00
CPC分类号： B41C1/10 , G03F7/11
摘要： To provide a lithographic printing plate precursor which generates no stains in the non-image area and is also excellent in development latitude. Disclosed is a lithographic printing plate precursor comprising a support and a photosensitive layer, said lithographic printing plate precursor further comprising a subbing layer containing a maleamic acid (co)polymer, in which at least one hydrogen atom on a nitrogen atom is substituted with an onium group, provided between the photosensitive layer and the support.
摘要翻译：为了提供在非图像区域中不产生污渍的平版印刷版原版，并且显影性也优异。公开了一种包含支持体和感光层的平版印刷版原版，所述平版印刷版前体还包含含有马来酰胺酸（共）聚合物的底层，其中氮原子上的至少一个氢原子被鎓组，设置在感光层和支撑体之间。

89. 发明申请

US20080241385A1 Method of Forming Thin Film, Thin Film Forming Apparatus, Program and Computer-Readable Information Recording Medium 审中-公开
标题翻译：形成薄膜，薄膜成型装置，程序和计算机可读信息记录介质的方法
公开(公告)号：US20080241385A1
公开(公告)日：2008-10-02
申请号：US10547784
申请日：2004-02-26
申请人： Yasuhiro Oshima , Yasuhiko Kojima , Takashi Shigeoka , Hiroshi Kannan , Tadahiro Ishizaka
发明人： Yasuhiro Oshima , Yasuhiko Kojima , Takashi Shigeoka , Hiroshi Kannan , Tadahiro Ishizaka
IPC分类号： C23C16/08 , C23C16/44
CPC分类号： C23C16/45523 , C23C16/34 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76843
摘要： A method of rapidly forming a thin film of high quality through film formation by alternate feeding of raw gases. In particular, a method of forming a TiN thin film, comprising repeating operations including causing TiCl4 gas as a raw gas to be adsorbed on a substrate or TiCl4 molecules adsorbed on a substrate and feeding NH3 gas as a reactant gas in a treating chamber so as to effect reaction of TiCl4 and NH3 leading to formation of a TiN film, which method further comprises an operation of, prior to the adsorption of TiCl4 gas on the substrate, feeding reducing H2 gas in the treating chamber (30) so as to change TiCl4 to a state of enhanced likelihood of adsorption on the substrate (e.g., TiCl3).
摘要翻译：通过交替进料原料气体，通过成膜快速形成高质量的薄膜的方法。特别是，形成TiN薄膜的方法，包括重复操作，包括使TiCl 4气体作为原料气体吸附在吸附在基底上的TiCl 4分子上底物并在处理室中加入作为反应气体的NH 3气体，以使TiCl 4和NH 3反应形成，形成的TiN膜，该方法还包括在衬底上吸附TiCl 4气体之前，在处理室（30）中进料还原H 2气体），以便将TiCl 4改变为增加在衬底上的吸附可能性（例如TiCl 3 3）的状态。

90. 发明申请

US20080070017A1 Layered Thin Film Structure, Layered Thin Film Forming Method, Film Forming System and Storage Medium 审中-公开
标题翻译：层状薄膜结构，分层薄膜成型方法，成膜系统和储存介质
公开(公告)号：US20080070017A1
公开(公告)日：2008-03-20
申请号：US11884020
申请日：2006-01-30
申请人： Naoki Yoshii , Yasuhiko Kojima , Hiroshi Sato
发明人： Naoki Yoshii , Yasuhiko Kojima , Hiroshi Sato
IPC分类号： H01L21/44 , B32B7/02 , C23C16/00
CPC分类号： C23C16/45542 , C23C16/06 , C23C16/45529 , Y10T428/2495 , Y10T428/24975
摘要： There is provided a layered thin film structure forming method capable of forming a layered thin film structure bonded to an underlying layer by high adhesion, of suppressing the peeling of the layered thin film structure off the underlying layer, of achieving satisfactory step coverage even under high miniaturization, and of satisfactorily diffusing an alloying element. A layered thin film structure forming method of forming a layered thin film structure by depositing a plurality of thin films on a surface of a workpiece in a processing vessel capable of being evacuated includes the steps of: forming an alloying-element film 104 of a first metal by using a source gas containing the first metal as an alloying element, and a reducing gas; and forming a base-metal film 106 of a second metal in a thickness greater than that of the alloying-element film by using a source gas containing the second metal, and a reducing gas. At least one cycle of the alternate steps of forming the alloying-element film and forming the base-metal film is executed.
摘要翻译：提供了一种分层薄膜结构形成方法，其能够通过高粘附性形成结合到下层的层状薄膜结构，从而抑制层状薄膜结构从下层剥离，即使在高的温度下也能实现令人满意的步骤覆盖小型化，令人满意地扩散合金元素。通过在能够被抽真空的处理容器中在工件的表面上沉积多个薄膜来形成层压薄膜结构的分层薄膜结构形成方法包括以下步骤：形成第一层的合金元素膜104 通过使用含有第一金属的源气体作为合金元素的金属和还原气体; 以及通过使用含有第二金属的源气体和还原气体，形成厚度大于合金元素膜厚度的第二金属的贱金属膜106。执行形成合金元素膜并形成基底金属膜的交替步骤的至少一个循环。

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