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81. 发明授权

US5405443A Substrates processing device 失效
标题翻译：基板处理装置
公开(公告)号：US5405443A
公开(公告)日：1995-04-11
申请号：US051554
申请日：1993-04-23
申请人： Masami Akimoto , Kazuyuki Gotou , Yasushi Ito , Katsuya Okumura
发明人： Masami Akimoto , Kazuyuki Gotou , Yasushi Ito , Katsuya Okumura
IPC分类号： B05C11/08 , B05C11/10 , G03F7/16 , G03F7/30 , H01L21/00 , H01L21/027 , H01L21/30 , B05C5/00
CPC分类号： H01L21/6715 , B05C11/08 , B05C11/1002 , B05C11/101 , B05C11/1047 , G03F7/162 , G03F7/3021
摘要： A substrates processing device having a tank in which process solution is contained, a bottle communicated with the tank through a conduit and located above an object to be processed with the process solution supplied, a nozzle located under the bottle, a support for supporting the object to be processed, and a changeover device for making pressure in it negative through a conduit when the process solution is to be added to it and also making pressure in it normal through the conduit when the process solution is to be supplied to the nozzle.
摘要翻译：一种基板处理装置，具有容纳有处理液的罐，通过导管与罐连通的瓶子，位于被供给的处理液的待处理对象上方，位于瓶下方的喷嘴，支撑物体的支撑体以及当将工艺溶液加入其中时，通过导管使压力为负的切换装置，并且当将处理液提供给喷嘴时，通过导管使压力正常。

82. 发明授权

US5356834A Method of forming contact windows in semiconductor devices 失效
标题翻译：在半导体器件中形成接触窗的方法
公开(公告)号：US5356834A
公开(公告)日：1994-10-18
申请号：US35656
申请日：1993-03-23
申请人： Shigeki Sugimoto , Katsuya Okumura
发明人： Shigeki Sugimoto , Katsuya Okumura
IPC分类号： H01L21/60 , H01L21/768 , H01L21/8242 , H01L21/441
CPC分类号： H01L27/10852 , H01L21/76804 , H01L21/76831 , H01L21/76897 , Y10S148/133
摘要： A manufacturing method of semiconductor devices according to this invention, comprises the step of forming pattern portions containing internal wiring layers on a semiconductor substrate, the step of forming interlayer insulating films on said semiconductor substrate, the step of forming an opening portion in said interlayer insulating films so as to allow the pattern portions and the substrate to appear, and the step of forming a sidewall insulating film on the sidewall of the pattern portions appearing in the opening portion.
摘要翻译：根据本发明的半导体器件的制造方法包括在半导体衬底上形成包含内部布线层的图案部分的步骤，在所述半导体衬底上形成层间绝缘膜的步骤，在所述层间绝缘体中形成开口部分的步骤以使图形部分和基板出现，以及在出现在开口部分的图案部分的侧壁上形成侧壁绝缘膜的步骤。

83. 发明授权

US5314847A Semiconductor substrate surface processing method using combustion flame 失效
标题翻译：半导体衬底表面加工方法采用燃烧火焰
公开(公告)号：US5314847A
公开(公告)日：1994-05-24
申请号：US768611
申请日：1991-10-18
申请人： Tohru Watanabe , Katsuya Okumura
发明人： Tohru Watanabe , Katsuya Okumura
IPC分类号： H01L21/28 , H01L21/00 , H01L21/027 , H01L21/20 , H01L21/30 , H01L21/302 , H01L21/3065 , H01L21/3105 , H01L21/311 , H01L21/316 , H01L21/321 , H01L21/324 , H01L21/34 , H01L21/768 , H01L23/522 , H01L21/02
CPC分类号： H01L21/67109 , H01L21/02178 , H01L21/02244 , H01L21/02255 , H01L21/2022 , H01L21/3105 , H01L21/31058 , H01L21/31105 , H01L21/31658 , H01L21/321 , H01L21/324 , H01L29/66969
摘要： In order to provide the processing required to prevent a semiconductor substrate from becoming contaminated or damaged, without heating it in a kiln, a combustion flame of a gas that is a mixture of hydrogen and oxygen is applied to the surface of the semiconductor substrate, so that only the substrate surface is heated. Oxidizing or reducing processing can be provided by varying the ratio of hydrogen to oxygen. A device that enables this processing method comprises a first conduit (6) for guiding hydrogen; a second conduit (7) for guiding oxygen; a flame generation means (5) for combusting the hydrogen and the oxygen in a mixed state to generate a downward-pointing flame over a range wider than the diameter of a semiconductor substrate (1) that is being processed; a flow regulation means (8) and (9) provided midway in each of the first tube and the second tube, for regulating the fluid passing through each of the first tube and the second tube; and a conveyor means (2), (3), and (14) for conveying the semiconductor substrate that is being processed, provided below the flame generation means.
摘要翻译： PCT No.PCT / JP91 / 00215 Sec。 371日期1991年10月18日 102（e）日期1991年10月18日PCT 1991年2月20日PCT PCT。出版物WO91 / 13461 1991年9月5日。为了提供防止半导体衬底被污染或损坏的处理，而不在窑中加热，将作为氢和氧的混合物的气体的燃烧火焰施加到表面，使得只有基板表面被加热。可以通过改变氢与氧的比例来提供氧化或还原处理。实现该处理方法的装置包括用于引导氢的第一导管（6）用于引导氧气的第二导管（7）一种用于在混合状态下燃烧氢和氧的火焰产生装置（5），以在比待处理的半导体衬底（1）的直径更宽的范围上产生向下指示的火焰; 设置在第一管和第二管的每一个中间的流量调节装置（8）和（9），用于调节流过第一管和第二管中的每一个的流体; 以及设置在火焰产生装置下方的用于输送被处理的半导体衬底的传送装置（2），（3）和（14）。

84. 发明授权

US5261966A Method of cleaning semiconductor wafers using mixer containing a bundle of gas permeable hollow yarns 失效
标题翻译：使用含有一束透气中空纱线的混合器清洗半导体晶片的方法
公开(公告)号：US5261966A
公开(公告)日：1993-11-16
申请号：US825589
申请日：1992-01-24
申请人： Noriyoshi Mashimo , Katsuya Okumura
发明人： Noriyoshi Mashimo , Katsuya Okumura
IPC分类号： B08B3/08 , B08B9/02 , H01L21/00 , C23G1/02
CPC分类号： B08B9/027 , B08B3/08 , H01L21/67057 , B08B2203/005 , Y10S134/902
摘要： For cleaning semiconductor wafers in a cleaning vessel by supplying a cleaning fluid through a supply line thereto, a mixer is provided. Deionized water is supplied to the mixer through a deionized water supply line, and a cleaning gas is supplied thereto from a gas reservoir to produce the cleaning fluid. After treating the semiconductor wafers with the cleaning fluid, the deionized water is supplied to the cleaning vessel to rinse them.

85. 发明授权

US5250137A Plasma treating apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5250137A
公开(公告)日：1993-10-05
申请号：US731475
申请日：1991-07-17
申请人： Junichi Arami , Toshihisa Nozawa , Keiji Horioka , Katsuya Okumura
发明人： Junichi Arami , Toshihisa Nozawa , Keiji Horioka , Katsuya Okumura
IPC分类号： C23C14/40 , C23C14/50 , C23F4/00 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/683 , B05C5/00
CPC分类号： H01L21/67069 , H01L21/6831
摘要： A plasma treating apparatus includes an electrostatic chuck constructing an electrically conductive layer and insulating layers having the conductive layer sandwiched therebetween. A RF current supplied to a susceptor is prevented from flowing into the conductive layer of the chuck so as to suppress the RF current leakage from a cable connected to the conductive layer of the chuck for high voltage application. The plasma treating apparatus includes a chamber having a first electrode, a second electrode disposed within the chamber, a cylindrical high frequency power supply member inserted from the outside into the chamber such that the tip of the member is connected to the second electrode, high frequency power supply means for supplying a high frequency power through the power supply member to the second electrode so as to generate a plasma in the region between the first and second electrodes within the chamber, an electrostatic chuck arranged on the second electrode and constructed such that a conductive layer is formed within an insulating layer, a cable for applying a high voltage, the cable being inserted into the power supply member and having the tip connected to the conductive layer of the electrostatic chuck, and a power source connected to the cable.
摘要翻译：等离子体处理装置包括构成导电层的静电卡盘和夹在其间的导电层的绝缘层。防止提供给基座的RF电流流入卡盘的导电层，以便抑制与电缆连接的电缆的RF电流泄漏，以用于高电压施加。等离子体处理装置包括具有第一电极，设置在室内的第二电极的室，从外部插入室的圆柱形高频电源构件，使得构件的尖端连接到第二电极，高频电源装置，用于通过所述电源构件向所述第二电极提供高频电力，以在所述室内的所述第一和第二电极之间的区域中产生等离子体;静电吸盘，其布置在所述第二电极上，导电层形成在绝缘层内，用于施加高电压的电缆，所述电缆插入到电源构件中，并且尖端连接到静电卡盘的导电层，以及连接到电缆的电源。

86. 发明授权

US5062271A Evacuation apparatus and evacuation method 失效
标题翻译：排气装置和排气方法
公开(公告)号：US5062271A
公开(公告)日：1991-11-05
申请号：US519377
申请日：1990-05-04
申请人： Katsuya Okumura , Fumio Kuriyama , Yukio Murai , Manabu Tsujimura , Hiroshi Sobukawa
发明人： Katsuya Okumura , Fumio Kuriyama , Yukio Murai , Manabu Tsujimura , Hiroshi Sobukawa
IPC分类号： F04B37/16 , B01J3/02 , F04B37/06 , F04D19/04 , H01L21/302 , H01L39/24
CPC分类号： F04D19/046 , F04B37/06 , Y10S417/901
摘要： An evacuation apparatus and method using a turbomolecular pump having a rotor provided with a plurality of rotor blades and a spacer provided with a plurality of stator blades so that gas molecules are sucked in from a suction port, compressed and discharged from an exhaust port of the turbomolecular pump is disclosed. A heat exchanger is provided at the suction port side of the turbomolecular pump to freeze-trap gas molecules from being cooled by a helium refrigerator.The gate valve is disposed upstream of the heat exchanger and is provided in a suction pipe which extends between the vacuum vessel and the turbomolecular pump. In exhausting the vacuum vessel, the gate valve is opened and, in this state, the turbomolecular pump and the helium refrigerator are run. During regeneration, the gate valve is closed, the turbomolecular pump is run, and the heat exchanger is heated by means of a heater or by operation of the helium refrigator being suspended, thereby sublimating molecules freeze-trapped in the heat exchanger.

87. 发明授权

US4912963A Method and an apparatus for evaluating the gas purifying ability of a gas purifier 失效
标题翻译：用于评估气体净化器的气体净化能力的方法和装置
公开(公告)号：US4912963A
公开(公告)日：1990-04-03
申请号：US313529
申请日：1989-02-22
申请人： Kazuya Mori , Tohru Watanabe , Katsuya Okumura
发明人： Kazuya Mori , Tohru Watanabe , Katsuya Okumura
IPC分类号： B01J19/00 , G01M3/26 , G01N5/02 , H01L21/302
CPC分类号： G01M3/26 , G01N5/02
摘要： A method and an apparatus for evaluating the gas purifying ability of a gas purifier are described. The method for evaluating the gas purifying ability comprises the steps of sealing the gas purifier while reducing the inner gas pressure of the gas purifier, releasing a desirable impurity gas shut within a tank at a higher inner gas pressure than the inner gas pressure of the gas purifier, to the sealed gas purifier, and measuring the gas releasing ability of the impurity gas to the gas purifier.

88. 发明授权

US4823182A Semiconductor device with a diffusion barrier contact of a refractory metal nitride and either carbon or boron 失效
$Semiconductor device with a diffusion barrier contact of a refractory metal nitride and either carbon or boron$
标题翻译：具有难熔金属氮化物和碳或硼的扩散阻挡接触的半导体器件
公开(公告)号：US4823182A
公开(公告)日：1989-04-18
申请号：US123371
申请日：1987-11-20
申请人： Katsuya Okumura
发明人： Katsuya Okumura
IPC分类号： H01L29/43 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L29/41 , H01L29/45 , H01L29/46
CPC分类号： H01L21/76864 , H01L21/76843 , H01L21/76855 , H01L21/76859 , H01L29/456 , Y10S257/915
摘要： A semiconductor device is disclosed, in which a titanium nitride film containing boron or carbon is provided between a semiconductor substrate and an aluminum film. Non-reacted substances in the titanium nitride film are rendered inactive by boron or carbon contained in the titanium nitride film. Thus, it is possible to improve the barrier properties of the titanium nitride film as mutual diffusion prevention film and also ensure good electric conductivity.
摘要翻译：公开了一种半导体器件，其中在半导体衬底和铝膜之间设置含有硼或碳的氮化钛膜。氮化钛膜中的未反应物质被氮化钛膜中所含的硼或碳变为无活性。因此，可以提高作为相互扩散防止膜的氮化钛膜的阻隔性，并且还确保良好的导电性。

89. 发明授权

US4538344A Method of forming electrode/wiring layer 失效
标题翻译：形成电极/布线层的方法
公开(公告)号：US4538344A
公开(公告)日：1985-09-03
申请号：US582223
申请日：1984-02-21
申请人： Katsuya Okumura , Masaaki Ueda
发明人： Katsuya Okumura , Masaaki Ueda
IPC分类号： H01L23/522 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/485 , H01L23/52 , H01L23/532 , H01L21/24 , H01L29/46
CPC分类号： H01L23/53271 , H01L21/7684 , H01L21/76877 , H01L21/76886 , H01L23/485 , H01L23/53223 , H01L2924/0002
摘要： An interconnection structure including an electrode/wiring layer can be formed on a semiconductor substrate by forming on the semiconductor substrate an insulating structure having at least one recess in a surface thereof. At least one polycrystalline silicon layer is formed to fill the recess of the insulating structure. Then, an aluminum layer is formed to cover a surface of the insulating structure and a surface of the polycrystalline silicon layer. The polycrystalline silicon in the polycrystalline silicon layer and the aluminum in a portion of the aluminum layer which corresponds to the polycrystalline silicon layer are converted into a single alloy by heating to form an electrode/wiring layer comprising the single alloy in the recess and connected to a remaining portion of the aluminum layer.
摘要翻译：包括电极/布线层的互连结构可以在半导体基板上形成在其表面上具有至少一个凹部的绝缘结构。形成至少一个多晶硅层以填充绝缘结构的凹部。然后，形成铝层以覆盖绝缘结构的表面和多晶硅层的表面。多晶硅层中的多晶硅和对应于多晶硅层的部分铝层中的铝通过加热转变为单一合金，以在凹部中形成包含单一合金的电极/布线层，并连接到铝层的剩余部分。

90. 发明授权

US4488674A Bonding wire, semiconductor device having the same, and bonding method using the same 失效
标题翻译：接合线，具有该接合线的半导体器件及使用其的接合方法
公开(公告)号：US4488674A
公开(公告)日：1984-12-18
申请号：US423283
申请日：1982-09-24
申请人： Hideharu Egawa , Katsuya Okumura
发明人： Hideharu Egawa , Katsuya Okumura
IPC分类号： H01L21/60 , H01L23/49
CPC分类号： H01L24/85 , H01L24/745 , H01L24/78 , H01L2224/05553 , H01L2224/43822 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45565 , H01L2224/4569 , H01L2224/48247 , H01L2224/49171 , H01L2224/745 , H01L2224/78 , H01L2224/8502 , H01L2224/851 , H01L2224/85205 , H01L24/45 , H01L2924/00011 , H01L2924/00015 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , Y10T29/49162
摘要： The invention provides a bonding wire which prevents electric short-circuiting even if it comes into contact with another bonding wire, a bonding method using the same, and a semiconductor device including the same. The bonding wire comprises a core wire made of a metal and an insulating film which surrounds it. The insulating film is eliminated from the ends of the bonding wire by thermal decomposition and scattering, while simultaneously each end of the bonding wire is connected to a bonding pad of the semiconductor device or to a lead frame. In the semiconductor device, the bonding pads are respectively connected to lead frames by means of the bonding wires.
摘要翻译：本发明提供了即使与另一个接合线接触也防止电气短路的接合线，使用该接合线的接合方法以及包括该接合线的半导体器件。接合线包括由金属制成的芯线和围绕它的绝缘膜。通过热分解和散射，从接合线的端部除去绝缘膜，同时将接合线的每个端部连接到半导体器件的接合焊盘或引线框架。在半导体器件中，接合焊盘通过接合线分别连接到引线框架。

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