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81. 发明授权

US06169304A Semiconductor device having a passivation layer which minimizes diffusion of hydrogen into a dielectric layer 失效
标题翻译：具有钝化层的半导体器件使氢扩散到电介质层中最小化
公开(公告)号：US06169304A
公开(公告)日：2001-01-02
申请号：US09071534
申请日：1998-05-04
申请人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
发明人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11585 , H01L27/1159 , H01L28/40 , H01L28/55 , H01L28/60 , H01L28/75 , Y10S438/958
摘要： A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 1021 atoms/cm3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
摘要翻译：一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件，其上形成集成电路。该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连在其他方面。通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

82. 发明授权

US6103460A Silver halide color photographic light-sensitive material 失效
标题翻译：卤化银彩色摄影感光材料
公开(公告)号：US6103460A
公开(公告)日：2000-08-15
申请号：US110849
申请日：1998-07-07
申请人： Osamu Takahashi , Yasuhiro Yoshioka , Shin Soejima , Yasuhiro Shimada , Masakazu Morigaki
发明人： Osamu Takahashi , Yasuhiro Yoshioka , Shin Soejima , Yasuhiro Shimada , Masakazu Morigaki
IPC分类号： G03C7/00 , G03C7/30 , G03C7/38 , G03C7/392 , G03C7/32
CPC分类号： G03C7/301 , G03C7/3825 , G03C7/39236 , G03C7/39252
摘要： A sliver halide color photographic light-sensitive material comprising a support having provided thereon at least one silver halide emulsion layer containing at least one cyan dye forming coupler represented by the formula (1) shown below, at least one compound represented by the formula (A) shown below and at least one compound represented by the formula (D) shown below: ##STR1## wherein Z.sup.a and Z.sup.b each represents --C(R.sup.3).dbd. or --N=, provided that one of Z.sup.a and Z.sup.b is --N= and the other is --C(R.sup.3).dbd.; R.sup.1 and R.sup.2 each represents an electron attractive group having a Hammett's substituent constant .sigma..sub.p value of 0.20 or more and the sum of the .sigma..sub.p values of R.sup.1 and R.sup.2 is 0.65 or more; R.sup.3 represents a hydrogen atom or a substituent; X represents a hydrogen atom or a group capable of being released upon a coupling reaction with an oxidation product of an aromatic primary amine color developing agent; and group represented by R.sup.1, R.sup.2, R.sup.3 or X may be a divalent group to form a dimer or more, or combine with a polymer chain to form a homopolymer or a copolymer; ##STR2## The silver halide color photographic light-sensitive material provides color images excellent in color reproducibility and color image fastness.
摘要翻译：一种卤化银色彩照相感光材料，其包括在其上提供至少一种含有由下式（1）表示的至少一种形成青色染料的成色剂的卤化银乳剂层的载体，至少一种由式（A ）和至少一种由下式（D）表示的化合物：其中Za和Zb各自表示-C（R3）=或-N =，条件是Za和Zb中的一个为-N =，另一个为 -C（R 3）=; R1和R2各自表示哈米特取代基常数σp值为0.20以上的吸电子基团，R 1和R 2的σp值之和为0.65以上; R3表示氢原子或取代基; X表示氢原子或与芳族伯胺显色剂的氧化产物偶联反应时能释放的基团; 并且由R 1，R 2，R 3或X表示的基团可以是二价基团以形成二聚体或更多，或与聚合物链组合以形成均聚物或共聚物; 卤化银彩色摄影感光材料提供色彩再现性和彩色图像牢度优异的彩色图像。

83. 发明授权

US6011261A Probe formed of mono-crystalline SI, the manufacturing method thereof, and an information processing device using the probe 失效
标题翻译：由单晶SI形成的探针及其制造方法以及使用该探针的信息处理装置
公开(公告)号：US6011261A
公开(公告)日：2000-01-04
申请号：US34227
申请日：1998-03-04
申请人： Tsutomu Ikeda , Takayuki Yagi , Yasuhiro Shimada , Takeo Yamazaki
发明人： Tsutomu Ikeda , Takayuki Yagi , Yasuhiro Shimada , Takeo Yamazaki
IPC分类号： G01N37/00 , G01B5/28 , G01C7/00 , G01Q60/10 , G01Q60/16 , G01Q60/22 , G01Q60/24 , G01Q60/38 , G01Q70/10 , G01Q70/14 , G01Q70/16 , G01Q80/00 , G11B9/00 , G11B9/14 , G11B21/22 , H01J37/26 , H01L21/306
CPC分类号： G01Q60/40 , B82Y35/00 , G01Q60/04 , Y10S977/875
摘要： A probe for detecting minute physical behavior comprises a lever member, particularly in the form of a cantilever, formed of a monocrystalline silicon layer and a tip in the form of one-end-supported beam which is bowed and formed upon the lever member. The probe is manufactured by forming a film of a material with low density and high elasticity on the silicon layer of an SOI substrate, then oxidizing part of the silicon layer and removing the oxidized portion to form a tip with the material as a so-called bird's beak, and finally the SOI substrate is worked to form the cantilever shape of the lever member. The probe can be used for an information recording/reproducing device with good traceability even in high speed scanning over a recording medium.
摘要翻译：用于检测微小物理行为的探针包括由单晶硅层形成的杠杆构件，特别是悬臂形式的杠杆构件，以及在杆构件上弯曲并形成的一端支撑梁形式的尖端。通过在SOI衬底的硅层上形成具有低密度和高弹性的材料的膜，然后氧化硅层的一部分并除去氧化部分以形成具有所谓的材料的尖端来制造探针鸟的喙，最后，SOI基板被加工成形成杠杆构件的悬臂形状。即使在记录介质上进行高速扫描，该探针也可以用于具有良好追溯性的信息记录/再生装置。

84. 发明授权

US6001551A Silver halide color light-sensitive material 失效
标题翻译：卤化银色感光材料
公开(公告)号：US6001551A
公开(公告)日：1999-12-14
申请号：US342025
申请日：1994-11-16
申请人： Yasuhiro Shimada , Koushin Matsuoka , Hiroyuki Yoneyama
发明人： Yasuhiro Shimada , Koushin Matsuoka , Hiroyuki Yoneyama
IPC分类号： G03C7/00 , G03C7/38 , G03C1/08 , G03C7/26 , G03C7/32
CPC分类号： G03C7/383 , G03C7/3825
摘要： A silver halide color light-sensitive material containing a cyan coupler which provides an excellent hue and an improved fastness at a low color-developing area and which has small change in a color developing density, which is caused by change of a composition of a blix solution and provides a small fog in a cyan color at a non-exposed area in a continuous processing. The silver halide color light-sensitive material contains at least one cyan coupler represented by the following Formula (I) in at least one layer on a support: wherein Y represents --N.dbd. or --C(R.sub.3).dbd.; X represents a hydrogen atom or a group which splits off upon a coupling reaction with an oxidized product of a color developing agent; Z represents a non-metallic atomic group necessary for forming an alicyclic group or a heterocyclic ring; R.sub.1, R.sub.2 and R.sub.3 each represents a hydrogen atom or a substituent; and R.sub.1 contributes to form an unsaturated bond in a ring formed by Z or combined with the atoms on the ring formed by Z to form a ring.
摘要翻译：含有青色成色剂的卤化银色感光材料，其在低显色区域提供优异的色调和改善的牢度，并且由于混合物的组成的变化而引起的显色密度变化很小溶液，并在连续处理中在非曝光区域提供青色的小雾。卤化银色感光材料在载体上的至少一层中含有至少一种由下式（I）表示的青色成色剂：其中Y表示-N =或-C（R 3）=; X表示氢原子或与彩色显影剂的氧化产物偶联反应时分裂的基团; Z表示形成脂环族基或杂环所必需的非金属原子团; R1，R2和R3各自表示氢原子或取代基; 并且R 1有助于在Z形成的环中形成不饱和键或与由Z形成的环上的原子结合形成环。

85. 发明授权

US5920574A Method for accelerated test of semiconductor devices 失效
标题翻译：半导体器件加速测试方法
公开(公告)号：US5920574A
公开(公告)日：1999-07-06
申请号：US932894
申请日：1997-09-18
申请人： Yasuhiro Shimada , Keisaku Nakao , Atsuo Inoue , Masamichi Azuma , Eiji Fujii
发明人： Yasuhiro Shimada , Keisaku Nakao , Atsuo Inoue , Masamichi Azuma , Eiji Fujii
IPC分类号： G01R31/26 , G01R31/28 , G01R31/30 , G11C11/22 , G11C29/50 , G11C29/56 , H01L21/66 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108 , G11C29/00 , G01R1/04
CPC分类号： G11C29/50016 , G11C29/50 , G11C11/22 , G11C2029/5002
摘要： A method for an accelerated test of semiconductor devices comprises the steps of determining a relational expression t.sub.1 =t.sub.2.sup.m between an information holding lifetime t.sub.1 at a temperature T.sub.1 and another lifetime t.sub.2 at another temperature T.sub.2, expressing the exponent m as a function of the temperature that is proportional to the Boltzmann's factor, and calculating the information holding lifetime t.sub.2 at the temperature T.sub.2 on the basis of the information holding lifetime t.sub.1 at the temperature T.sub.1 using the relational expression.
摘要翻译：一种用于半导体器件的加速测试的方法包括以下步骤：确定在温度T1下的信息保持寿命t1和在另一温度T2的另一寿命t2之间的关系表达式t1 = t2m，其表示作为温度的函数的指数m 与玻耳兹曼因子成正比，并且使用关系式，基于温度T1下的信息保持寿命t1计算温度T2下的信息保持期限t2。

86. 发明授权

US5780351A Semiconductor device having capacitor and manufacturing method thereof 失效
标题翻译：具有电容器的半导体器件及其制造方法
公开(公告)号：US5780351A
公开(公告)日：1998-07-14
申请号：US844108
申请日：1997-04-28
申请人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
发明人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/115 , H01L21/20 , H01L21/00
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11585 , H01L27/1159 , H01L28/40 , H01L28/55 , H01L28/60 , H01L28/75 , Y10S438/958
摘要： A semi conductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
摘要翻译：一种半导体器件，其在形成集成电路的半导体衬底上通过层间绝缘层形成电容器。该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连在其他方面。通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

87. 发明授权

US5661319A Semiconductor device having capacitor 失效
标题翻译：具有电容器的半导体器件
公开(公告)号：US5661319A
公开(公告)日：1997-08-26
申请号：US681093
申请日：1996-07-22
申请人： Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Tooru Nasu , Akihiro Matsuda , Tatsuo Ootsuki
发明人： Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Tooru Nasu , Akihiro Matsuda , Tatsuo Ootsuki
IPC分类号： H01L21/02 , H01L21/8242 , H01L27/108 , H01L27/12 , H01L29/786 , H01L29/92 , H01L29/94 , H01G7/06
CPC分类号： H01L29/94 , H01L27/10808 , H01L27/10852 , H01L27/1203 , H01L28/55 , H01L29/78654 , H01L28/75
摘要： This is a semiconductor device having an integrated circuit and a capacitor formed on a semiconductor substrate. The capacitor comprises a bottom electrode serving also as a part of a diffusion layer of the integrated circuit, a dielectric film being formed on the bottom electrode, and a top electrode of a conductive film being formed on the dielectric film. In particular, it is preferred to form the dielectric film in two layers of dielectric film, and compose the dielectric film contacting with the bottom electrode of a dielectric material in a composition possessing an excess of a metal element than the stoichiometric composition.
摘要翻译：这是具有形成在半导体衬底上的集成电路和电容器的半导体器件。电容器包括还用作集成电路的扩散层的一部分的底部电极，形成在底部电极上的电介质膜和形成在电介质膜上的导电膜的顶部电极。特别地，优选将电介质膜形成为两层电介质膜，并且构成与具有比化学计量组成更多的金属元素的组成的与电介质材料的底电极接触的电介质膜。

88. 发明授权

US5599424A Method of manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5599424A
公开(公告)日：1997-02-04
申请号：US571732
申请日：1995-12-13
申请人： Shoji Matsumoto , Yoshihisa Nagano , Yasuhiro Shimada , Yasufumi Izutsu
发明人： Shoji Matsumoto , Yoshihisa Nagano , Yasuhiro Shimada , Yasufumi Izutsu
IPC分类号： H01L21/302 , H01L21/02 , H01L21/3065 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L21/00
CPC分类号： H01L28/40
摘要： On a silicon substrate, a silicon oxide layer, a first platinum layer, a dielectric film and a second platinum layer are formed, and then the second platinum layer and the dielectric film are dry etched, via a resist layer, in a 1-5 Pa low pressure region with a mixed gas of HBr and 0.sub.2 as the etching gas. As soon as the first platinum layer is exposed, the unetched portion of dielectric film is etched off in a 5-50 Pa high pressure region, and then the first platinum layer is dry etched again in the low pressure region to form a capacitor consisting of a top electrode, a capacitance insulation layer and a bottom electrode in a semiconductor integrated circuit chip. Using this manufacturing method prevents the deterioration in definition caused by the use of a thick resist and the operation failure of circuit elements such as transistors due to over etching on the insulation layer.
摘要翻译：在硅衬底上形成氧化硅层，第一铂层，电介质膜和第二铂层，然后通过抗蚀剂层在1-5中干法蚀刻第二铂层和电介质膜 Pa低压区域，混合气体为HBr和O2作为蚀刻气体。一旦露出第一铂层，在5-50Pa高压区域中蚀刻介电膜的未蚀刻部分，然后在低压区域再次干法蚀刻第一铂层，形成由半导体集成电路芯片中的顶部电极，电容绝缘层和底部电极。使用该制造方法可以防止由于在绝缘层上的过度蚀刻而使用厚的抗蚀剂引起的定义的劣化以及诸如晶体管的电路元件的操作故障。

89. 发明授权

US5546375A Method of manufacturing a tip for scanning tunneling microscope using peeling layer 失效
标题翻译：使用剥离层制造用于扫描隧道显微镜的尖端的方法
公开(公告)号：US5546375A
公开(公告)日：1996-08-13
申请号：US555503
申请日：1995-11-08
申请人： Yasuhiro Shimada , Yoshimasa Okamura , Osamu Takamatsu , Masaru Nakayama , Yoshihiro Yanagisawa
发明人： Yasuhiro Shimada , Yoshimasa Okamura , Osamu Takamatsu , Masaru Nakayama , Yoshihiro Yanagisawa
IPC分类号： G01Q10/00 , G01Q60/16 , G01B7/34 , G01B21/30 , G01N37/00 , G01Q20/04 , G01Q60/10 , G01Q60/38 , G01Q70/06 , G01Q70/14 , G01Q80/00 , G11B9/00 , G11B9/14 , H01J9/02 , H01J37/28
CPC分类号： G01Q20/04 , B82Y35/00 , G01Q60/16 , G11B9/1409 , G11B9/1418 , B82Y10/00 , G01Q80/00 , Y10S977/861 , Y10S977/875 , Y10S977/888
摘要： After a recessed portion 2 is formed in a first substrate made of single crystal silicon by crystal axis anisotropic etching, a peeling layer and a material of a fine tip which may be a noble metal or a noble metal alloy are formed. A second substrate is joined to the fine tip, and peeling is performed on the peeling layer, whereby the fine tip is formed on the second substrate.
摘要翻译：在通过晶轴各向异性蚀刻在由单晶硅制成的第一衬底中形成凹陷部分2之后，形成剥离层和可以是贵金属或贵金属合金的细尖端材料。将第二基板接合到细尖端，并且在剥离层上进行剥离，由此在第二基板上形成细末端。

90. 发明授权

US5384236A Silver halide color photographic material 失效
标题翻译：卤化银彩色照相材料
公开(公告)号：US5384236A
公开(公告)日：1995-01-24
申请号：US257189
申请日：1994-06-08
申请人： Koushin Matsuoka , Yasuhiro Shimada , Hiroyuki Yoneyama
发明人： Koushin Matsuoka , Yasuhiro Shimada , Hiroyuki Yoneyama
IPC分类号： C07D487/04 , G03C7/38
CPC分类号： C07D487/04 , G03C7/383
摘要： A silver halide color photographic material comprising a support having provided thereon at least one layer containing at least one cyan coupler represented by formula (I) ##STR1## wherein R.sub.1 and R.sub.2 each represent a substituent except methyl group;R.sub.3, R.sub.4, R.sub.5 and R.sub.6 each represent a hydrogen atom or a substituent;Z represents a non-metallic atom or a non-metallic atomic group necessary for forming a ring and the non-metallic atomic group of Z may optionally be substituted by substituent(s); andX represents a hydrogen atom, or a group of splitting off from the formula by coupling reaction with an oxidation product of an aromatic primary amine color developing agent.
摘要翻译：一种卤化银彩色照相材料，其包含在其上设置有至少一层含有式（I）表示的至少一种青色成色剂的载体的载体，其中R1和R2各自表示除甲基以外的取代基; R3，R4，R5和R6各自表示氢原子或取代基; Z表示形成环所需的非金属原子或非金属原子团，Z的非金属原子团可以任选被取代基取代; X表示氢原子，或者是通过与芳香族伯胺显色剂的氧化产物偶联反应而与式分解的基团。

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