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81. 发明授权

US07276693B2 Inspection method and apparatus using charged particle beam 有权
标题翻译：使用带电粒子束的检查方法和装置
公开(公告)号：US07276693B2
公开(公告)日：2007-10-02
申请号：US11375070
申请日：2006-03-15
申请人： Hikaru Koyama , Hidetoshi Nishiyama , Mari Nozoe
发明人： Hikaru Koyama , Hidetoshi Nishiyama , Mari Nozoe
IPC分类号： G01N23/00 , H01J37/20 , H01J37/22 , H01J37/28
CPC分类号： G01R31/311
摘要： A scanning electron microscope or inspection system includes a sample stage on which a sample such as a wafer is loaded, an electro optical unit to scan an electron beam to the sample, and a charge control electrode to which voltage for controlling a charged state of the sample is applied. Further, there is provided an ultraviolet irradiation device for irradiating ultraviolet light onto the sample, a retarding electric source to apply a retarding voltage to the sample stage or the sample, and a detection unit for detecting secondary electrons or backscattering electrons generated in response to the scan of the electron beam. A monitoring unit for displaying an image of the sample or an inspection unit for inspection of the sample is provided which effects display or inspection based on signals from the detection unit.
摘要翻译：扫描电子显微镜或检查系统包括其上装载诸如晶片的样品的样品台，向样品扫描电子束的电光单元以及用于控制电极的充电状态的电压样品被应用。此外，提供了一种用于向样品照射紫外光的紫外线照射装置，向样品台或样品施加延迟电压的延迟电源，以及用于检测响应于该样品的样品产生的二次电子或反向散射电子的检测单元扫描电子束。提供了用于显示样本的图像的监视单元或用于检查样本的检查单元，其基于来自检测单元的信号进行显示或检查。

82. 发明申请

US20060022295A1 Evaluation method and manufacturing method of semiconductor device 审中-公开
标题翻译：半导体器件的评估方法和制造方法
公开(公告)号：US20060022295A1
公开(公告)日：2006-02-02
申请号：US11186831
申请日：2005-07-22
申请人： Atsuko Takafuji , Mari Nozoe , Kiyonori Oyu
发明人： Atsuko Takafuji , Mari Nozoe , Kiyonori Oyu
IPC分类号： H01L23/58 , H01L29/00 , G01R31/305
CPC分类号： H01L22/14 , G01R31/2653 , H01L2924/0002 , H01L2924/00
摘要： The electron beam is irradiated several times at predetermined intervals to the wafer surface on which the plugs are exposed in the course of the manufacturing process so that the pn junction is in the reverse bias state. Then, the irradiation conditions of the electron beam are changed while monitoring the charging voltage on the plug surface, and the secondary electron signals of the circuit pattern are obtained under the irradiation conditions that the charging is within a desired range, thereby evaluating the leakage property. Since the charging voltage of the pn junction is relaxed depending on the magnitude of the leakage current during the interval, the leakage property is evaluated based on the luminance signals of the voltage contrast image. By measuring the charging voltage and setting it within a desired range, the evaluation result reflects the state in the actual operation. Therefore, the accuracy is enhanced.
摘要翻译：电子束在制造过程中以预定间隔照射到插头暴露在其上的晶片表面，使得pn结处于反向偏置状态。然后，在监视插头表面上的充电电压的同时改变电子束的照射条件，并且在充电在期望范围内的照射条件下获得电路图案的二次电子信号，从而评估泄漏特性。由于pn结的充电电压根据间隔期间的漏电流的大小而放宽，所以基于电压对比度图像的亮度信号来评价泄漏特性。通过测量充电电压并将其设置在所需范围内，评估结果反映实际操作中的状态。因此，精度提高。

83. 发明申请

US20050040331A1 Inspection method and inspection apparatus using electron beam 审中-公开
标题翻译：使用电子束的检查方法和检查装置
公开(公告)号：US20050040331A1
公开(公告)日：2005-02-24
申请号：US10942941
申请日：2004-09-17
申请人： Yasuhiro Gunji , Taku Ninomiya , Ryuichi Funatsu , Yoshikazu Inada , Kenjirou Yamamoto , Mari Nozoe
发明人： Yasuhiro Gunji , Taku Ninomiya , Ryuichi Funatsu , Yoshikazu Inada , Kenjirou Yamamoto , Mari Nozoe
IPC分类号： G01R31/302 , H01J37/22 , H01J37/28 , H01L21/66 , G01N23/00
CPC分类号： G01R31/305 , H01J37/222 , H01J37/244 , H01J37/268 , H01J37/28 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： An inspection method and an inspection apparatus using an electron beam enabling more detailed and quantitative evaluation at a high throughput level. The method comprises the steps of irradiating, based on previously prepared information concerning a defect position on the surface of a sample, the defect and its vicinity with an electron beam a plurality of times at predetermined intervals; detecting an electron signal secondarily generated from the sample surface by the electron beam; imaging an electron signal detected by the previously specified n-th or later electron beam irradiation; and measuring the resistance or a leakage amount of the defective portion of the sample surface in accordance with the degree of charge relaxation by monitoring the charge relaxation state of the sample surface based on the electron beam image information.
摘要翻译：使用电子束的检查方法和检查装置能够在高通量水平下进行更详细和定量的评估。该方法包括以预定间隔以电子束多次照射预先准备的关于样品表面上的缺陷位置的信息，缺陷及其附近的信息的步骤; 通过电子束检测从样品表面二次产生的电子信号; 对由先前指定的第n或更晚的电子束照射检测的电子信号成像; 并且通过基于电子束图像信息监测样品表面的电荷弛豫状态，根据电荷弛豫程度来测量样品表面的缺陷部分的电阻或泄漏量。

84. 发明授权

US06586952B2 Method of inspecting pattern and inspecting instrument 有权
标题翻译：检查模式和检验仪器的方法
公开(公告)号：US06586952B2
公开(公告)日：2003-07-01
申请号：US09881000
申请日：2001-06-15
申请人： Mari Nozoe , Mitsuo Suga , Yoichiro Neo , Hidetoshi Nishiyama
发明人： Mari Nozoe , Mitsuo Suga , Yoichiro Neo , Hidetoshi Nishiyama
IPC分类号： G01R31305
CPC分类号： H01J37/222 , G01R31/307 , H01J37/256 , H01J37/263 , H01J37/265 , H01J37/266 , H01J2237/043 , H01J2237/24564 , H01J2237/2594 , H01J2237/2813 , H01J2237/2817 , H01J2237/304
摘要： Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.
摘要翻译：电子束在连接点成为向后偏置的状态下以预定间隔在步骤中照射到晶片，并且监视在向后偏置中减轻电荷的时间段的特性差。结果，在比正常部分短的时间段内产生结漏电的位置处的电荷被减轻，因此在正常部分和失效部分之间产生电位差，并且在潜在对比图像中观察到电荷作为亮度的差异。通过连续重复获取图像的操作，实时执行图像处理并存储失败部分的位置和亮度，可以执行指定区域的自动检查。故障部分的图像，亮度和分布信息在检查后自动保存并输出。

85. 发明授权

US08558173B2 Method of inspecting pattern and inspecting instrument 有权
标题翻译：检查模式和检验仪器的方法
公开(公告)号：US08558173B2
公开(公告)日：2013-10-15
申请号：US11518893
申请日：2006-09-12
申请人： Mari Nozoe , Hidetoshi Nishiyama , Shigeaki Hijikata , Kenji Watanabe , Koji Abe
发明人： Mari Nozoe , Hidetoshi Nishiyama , Shigeaki Hijikata , Kenji Watanabe , Koji Abe
IPC分类号： G01N23/00
CPC分类号： G06T7/0004 , G01N23/20 , G06T2207/30148 , H01J2237/2487 , H01J2237/2817
摘要： An electron beam apparatus equipped with a review function of a semiconductor wafer includes a scanning electron microscope to obtain image information of a semiconductor wafer, and an information processing apparatus to process the image information. The information processing apparatus includes a data input unit to receive positional information of a defect on the wafer, a storage for storing a plurality of image information of a position on the wafer corresponding to the positional information, and an image processing unit that retrieves any of the plurality of image information, and classifies the retrieved image information corresponding to the positional information depending on the type of defect.
摘要翻译：配备有半导体晶片的检查功能的电子束装置包括扫描电子显微镜以获得半导体晶片的图像信息，以及处理图像信息的信息处理装置。信息处理装置包括：数据输入单元，用于接收晶片上的缺陷的位置信息，存储用于存储与位置信息对应的晶片上的位置的多个图像信息;以及图像处理单元，多个图像信息，并且根据缺陷的类型对与位置信息相对应的检索到的图像信息进行分类。

86. 发明授权

US08421008B2 Pattern check device and pattern check method 有权
标题翻译：图案检查装置和图案检查方法
公开(公告)号：US08421008B2
公开(公告)日：2013-04-16
申请号：US13129201
申请日：2009-10-15
申请人： Mari Nozoe , Hiroshi Miyai , Mitsuru Okamura , Makoto Suzuki , Yusuke Ominami
发明人： Mari Nozoe , Hiroshi Miyai , Mitsuru Okamura , Makoto Suzuki , Yusuke Ominami
IPC分类号： H01J37/26 , H01J37/304 , G01N23/00
CPC分类号： H01J37/28 , H01J37/244 , H01J2237/0048 , H01J2237/2008 , H01J2237/24564 , H01J2237/2817 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Provided is a pattern inspection apparatus including: a charge formation means which forms charge on a surface of a substrate (7) by generating an electron beam from a second electron source (20) which is different from an electron source (1) which generates an electron beam before irradiating an electron beam (3), a current measuring means (34) which measures a value of current flowing in the substrate while the charge is formed on the surface of the substrate by the charge formation means; and an adjustment means (37) which adjusts the charge formed by the charge formation means so that the value of the current measured by the current measuring means is a predetermined target value. Provided is also a pattern inspection method which uses the pattern inspection apparatus. Thus, it is possible to easily set an optimal condition of precharge executed before inspection of a pattern formed by a semiconductor apparatus manufacturing process and automatically inspection whether the precharge is good. Then, the inspection result is fed back to the operation afterward. This prevents lowering of the reliability of the inspection result and always enables a stable inspection.
摘要翻译：提供了一种图案检查装置，其包括：电荷形成装置，其通过从不同于电子源的电子源（1）产生来自第二电子源（20）的电子束，从而在基板（7）的表面上形成电荷，电子束（3）之前的电子束;电流测量装置（34），其通过电荷形成装置测量在基板的表面上形成电荷时在基板中流动的电流值; 以及调整装置，其调整由电荷形成装置形成的电荷，使得由电流测量装置测量的电流的值是预定的目标值。还提供了使用图案检查装置的图案检查方法。因此，可以容易地设定在由半导体装置制造工艺形成的图案的检查之前执行的预充电的最佳状态，并且自动检查预充电是否良好。然后，检查结果反馈给操作。这防止了检查结果的可靠性降低，并且始终能够进行稳定的检查。

87. 发明申请

US20120061565A1 CHARGED PARTICLE BEAM DEVICE AND SAMPLE OBSERVATION METHOD 有权
标题翻译：充电颗粒光束装置和样品观测方法
公开(公告)号：US20120061565A1
公开(公告)日：2012-03-15
申请号：US13321583
申请日：2010-05-18
申请人： Momoyo Enyama , Hiroya Ohta , Taku Ninomiya , Mari Nozoe
发明人： Momoyo Enyama , Hiroya Ohta , Taku Ninomiya , Mari Nozoe
IPC分类号： H01J37/26
CPC分类号： H01J37/28 , H01J37/265 , H01J2237/2446 , H01J2237/2817
摘要： Disclosed is a charged particle beam device, wherein multibeam secondary electron detectors (121a, 121b, 121c) and a single beam detector (140; 640) are provided, and under the control of a system control unit (135), an optical system control circuit (139) controls a lens and a beam selecting diaphragm (141) and switches the electrooptical conditions between those for multibeam mode and those for single beam mode, thereby one charged particle beam device can be operated as a multibeam charged particle device and a single beam charged particle device by switching. Thus, observation conditions are flexibly changed in accordance with an object to be observed, and a sample can be observed with a high accuracy and high efficiency.
摘要翻译：公开了一种带电粒子束装置，其中提供多波束二次电子检测器（121a，121b，121c）和单光束检测器（140; 640），并且在系统控制单元（135）的控制下，光学系统控制电路（139）控制透镜和选择光阑（141），并将电光条件切换到用于多光束模式的光学条件和单光束模式之间，从而一个带电粒子束装置可以作为多光束带电粒子装置和单个光束带电粒子装置通过切换。因此，观察条件根据待观察的目标灵活地变化，并且可以高精度和高效率地观察样品。

88. 发明授权

US07876113B2 Method of inspecting pattern and inspecting instrument 有权
标题翻译：检查模式和检验仪器的方法
公开(公告)号：US07876113B2
公开(公告)日：2011-01-25
申请号：US12007911
申请日：2008-01-17
申请人： Mari Nozoe , Mitsuo Suga , Yoichiro Neo , Hidetoshi Nishiyama
发明人： Mari Nozoe , Mitsuo Suga , Yoichiro Neo , Hidetoshi Nishiyama
IPC分类号： G01R31/305
CPC分类号： H01J37/222 , G01R31/307 , H01J37/256 , H01J37/263 , H01J37/265 , H01J37/266 , H01J2237/043 , H01J2237/24564 , H01J2237/2594 , H01J2237/2813 , H01J2237/2817 , H01J2237/304
摘要： Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.
摘要翻译：电子束在连接点成为向后偏置的状态下以预定间隔在步骤中照射到晶片，并且监视在向后偏置中减轻电荷的时间段的特性差。结果，在比正常部分短的时间段内产生结漏电的位置处的电荷被减轻，因此在正常部分和失效部分之间产生电位差，并且在潜在对比图像中观察到电荷作为亮度的差异。通过连续重复获取图像的操作，实时执行图像处理并存储失败部分的位置和亮度，可以执行指定区域的自动检查。故障部分的图像，亮度和分布信息在检查后自动保存并输出。

89. 发明授权

US07394070B2 Method and apparatus for inspecting patterns 失效
标题翻译：检查模式的方法和装置
公开(公告)号：US07394070B2
公开(公告)日：2008-07-01
申请号：US11314020
申请日：2005-12-22
申请人： Mari Nozoe , Yasunori Goto , Zhaohui Cheng
发明人： Mari Nozoe , Yasunori Goto , Zhaohui Cheng
IPC分类号： G01N23/00 , G21K7/00 , G21K5/10
CPC分类号： H01J37/026 , G01R31/307 , H01J37/04 , H01J37/263 , H01J37/28 , H01J2237/0048 , H01J2237/24592 , H01J2237/2817
摘要： When the electrode potential of a charge control electrode above a wafer is reduced, image brightness is reduced. A point of change in the image brightness is a switching point between a positively charged state of the image and a negatively charged state of the image, showing the weakly charged state of the image. By setting this point of change as an inspecting condition, the amount of electric charges on the surface of the wafer can be reduced, and stable wafer inspection can be performed. It is estimated that an applied voltage V1 in FIG. 14 corresponds to the point of the change and is roughly included in the voltage range of a region enclosed by a broken line in the vicinity of the applied voltage V1. Within this voltage range, the influence of charge on an inspection under the inspecting condition can be reduced.
摘要翻译：当晶片上方的电荷控制电极的电极电位降低时，图像亮度降低。图像亮度的变化点是图像的带正电状态和图像的带负电状态之间的切换点，显示图像的弱电状态。通过将该变化点设定为检查条件，可以减少晶片表面上的电荷量，并且可以进行稳定的晶片检查。估计图1中的施加电压V 1。 14对应于变化点，并且大致包括在由施加电压V 1附近的由虚线包围的区域的电压范围内。在该电压范围内，可以减少充电对检查条件下的检查的影响。

90. 发明申请

US20080122462A1 Method of inspecting pattern and inspecting instrument 有权
公开(公告)号：US20080122462A1
公开(公告)日：2008-05-29
申请号：US12007911
申请日：2008-01-17
申请人： Mari Nozoe
发明人： Mari Nozoe
IPC分类号： G01R31/305
CPC分类号： H01J37/222 , G01R31/307 , H01J37/256 , H01J37/263 , H01J37/265 , H01J37/266 , H01J2237/043 , H01J2237/24564 , H01J2237/2594 , H01J2237/2813 , H01J2237/2817 , H01J2237/304
摘要： Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.

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