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81. 发明申请

US20100160640A1 PROCESS FOR PRODUCING PYRIPYROPENE DERIVATIVES AND INTERMEDIATES FOR THE PRODUCTION THEREOF 有权
标题翻译：生产吡啶衍生物的方法及其生产中间体
公开(公告)号：US20100160640A1
公开(公告)日：2010-06-24
申请号：US12733113
申请日：2008-08-13
申请人： Kimihiko Goto , Kazumi Yamamoto , Masayo Sakai , Masaaki Mitomi , Takashi Ando
发明人： Kimihiko Goto , Kazumi Yamamoto , Masayo Sakai , Masaaki Mitomi , Takashi Ando
IPC分类号： C07D493/04
CPC分类号： C07D493/04 , Y02P20/55
摘要： Disclosed is a process for producing compound C represented by formula C: wherein R′ represents straight chain, branched chain, or cyclic C2-6 alkylcarbonyl, wherein R1b is used as a protective group for hydroxyl at the 7-position of compound C. R1b represents formyl; optionally substituted straight chain C1-4 alkylcarbonyl; optionally substituted benzyl; group —SiR3R4R5 optionally substituted by halogen atom wherein R3, R4, and R5 each independently represent straight chain or branched chain C1-6 alkyl or phenyl; C1-6 alkyloxy-C1-6 alkyl optionally substituted by halogen atom; C1-6 alkylthio-C1-6 alkyl optionally substituted by halogen atom; straight chain, branched chain, or cyclic C1-4 alkyl optionally substituted by halogen atom, provided that, when alkyl in the C1-4 alkyl group is of a branched chain or cyclic type, the alkyl group is C3-4 alkyl; C2-6 alkenyl optionally substituted by halogen atom; C2-6 alkynyl optionally substituted by halogen atom; or an optionally substituted saturated or unsaturated five- or six-membered heterocyclic group. The process can produce pyripyropene derivatives that have acyloxy groups at the 1- and 11-positions and a hydroxyl group at the 7-position and are useful as insect pest control agents at a high yield.
摘要翻译：公开了一种制备由式C表示的化合物C的方法：其中R'表示直链，支链或环状C 2-6烷基羰基，其中R 1b用作化合物C的7-位羟基保护基。R1b 代表甲酰基; 任选取代的直链C 1-4烷基羰基; 任选取代的苄基; 基团-SiR 3 R 4 R 5任选被卤素原子取代，其中R 3，R 4和R 5各自独立地表示直链或支链C 1-6烷基或苯基; 任选被卤素原子取代的C 1-6烷氧基-C 1-6烷基; 任选被卤素原子取代的C 1-6烷硫基-C 1-6烷基; 直链，支链或任选被卤素原子取代的环状C 1-4烷基，条件是当C 1-4烷基中的烷基为支链或环状时，该烷基为C 3-4烷基; 任选被卤素原子取代的C 2-6烯基; 任选被卤素原子取代的C 2-6炔基; 或任选取代的饱和或不饱和的五元或六元杂环基。该方法可以产生在1-位和11位上具有酰氧基并且在7-位上具有羟基并且以高产率用作害虫防治剂的吡哆烯衍生物。

82. 发明申请

US20100145063A1 2- thioethenyl substituted carbapenem derivatives 失效
标题翻译： 2-硫代乙烯基取代的碳青霉烯衍生物
公开(公告)号：US20100145063A1
公开(公告)日：2010-06-10
申请号：US12656606
申请日：2010-02-04
申请人： Takahisa Maruyama , Yuko Kano , Takashi Ando , Toshiro Sasaki , Kazuhiro Aihara , Toshiki Fujita
发明人： Takahisa Maruyama , Yuko Kano , Takashi Ando , Toshiro Sasaki , Kazuhiro Aihara , Toshiki Fujita
IPC分类号： C07D277/34 , C07D417/02
CPC分类号： C07D487/04
摘要： 2-Ethenylthio-type carbapenem derivatives of formula (I) or pharmaceutically acceptable salts thereof are provided. The compounds according to the present invention have potent antimicrobial activity and a wide antimicrobial spectrum against pneumococci including penicillin resistant Streptococcus pneumoniae (PRSP), Haemophilus influenzae including β-lactamase-negative, ampicillin-resistant Haemophilus influenzae (BLNAR), and Moraxella (Branhamella) catarrhalis.
摘要翻译：提供式（I）的2-乙烯基硫代碳代青霉烯衍生物或其药学上可接受的盐。根据本发明的化合物具有有效的抗微生物活性和抗肺炎球菌的广谱抗菌谱，包括耐青霉素肺炎链球菌（PRSP），流感嗜血杆菌，包括β-内酰胺酶阴性，氨苄青霉素抗性流感嗜血杆菌（BLNAR）和莫拉氏菌）卡他氏菌

83. 发明申请

US20100141816A1 SOLID-STATE IMAGING DEVICE, METHOD FOR PRODUCING SAME, AND CAMERA 有权
标题翻译：固态成像装置，其制造方法和相机
公开(公告)号：US20100141816A1
公开(公告)日：2010-06-10
申请号：US12703848
申请日：2010-02-11
申请人： Yasushi Maruyama , Tetsuji Yamaguchi , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
发明人： Yasushi Maruyama , Tetsuji Yamaguchi , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
IPC分类号： H04N5/335 , H01L27/148 , H01L31/18
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
摘要翻译：固态成像装置包括具有第一表面和第二表面的基板，入射到第二表面侧的光; 布置在所述第一表面侧上的布线层; 形成在所述基板中并且包括第一导电类型的第一区域的光电检测器; 设置在所述基板的所述第一表面上且与所述光电检测器相邻的传输栅极，所述传输栅极传送累积在所述光电检测器中的信号电荷; 以及至少一个控制栅极，其设置在所述基板的所述第一表面上并且重叠在所述光电检测器上，所述控制栅极控制所述光电检测器在所述第一表面附近的电位。

84. 发明申请

US20090246309A1 FINE STRUCTURE IMPRINTING MACHINE 审中-公开
标题翻译：精细结构加工机
公开(公告)号：US20090246309A1
公开(公告)日：2009-10-01
申请号：US12388653
申请日：2009-02-19
申请人： Ryuta WASHIYA , Takashi Ando , Masahiko Ogino , Noritake Shizawa , Kyoichi Mori , Akihiro Miyauchi
发明人： Ryuta WASHIYA , Takashi Ando , Masahiko Ogino , Noritake Shizawa , Kyoichi Mori , Akihiro Miyauchi
IPC分类号： B29C59/02
CPC分类号： B29C35/0888 , B29C37/0053 , B29C2035/0827 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A fine structure imprinting machine is provided which can surely and easily eliminate static electricity in removing a stamper from an imprinting object. The fine structure imprinting machine is adapted to bring the stamper with a fine concavo-convex pattern formed thereon into contact with the imprinting object, thereby to imprint the fine concavo-convex pattern of the stamper onto a surface of the imprinting object. The stamper has a conductive film on at least a pattern formation surface thereof. The stamper is fixed by a conductive holding member, the conductive film is connected to the holding member via the conductor, and the holding member is connected to a ground within the machine.
摘要翻译：提供了一种精细的结构压印机，其可以确实地和容易地消除从压印对象去除压模的静电。精细结构压印机适于使压模与形成在其上的精细凹凸图案与压印对象接触，从而将压模的细微凹凸图案压印到压印对象的表面上。压模至少在其图案形成表面上具有导电膜。压模由导电保持构件固定，导电膜通过导体连接到保持构件，并且保持构件连接到机器内的地面上。

85. 发明申请

US20090243126A1 METHOD AND APPARATUS FOR IMPRINTING MICROSTRUCTURE AND STAMPER THEREFOR 有权
标题翻译：用于印刷微结构和印刷机的方法和装置
公开(公告)号：US20090243126A1
公开(公告)日：2009-10-01
申请号：US12388573
申请日：2009-02-19
申请人： Ryuta Washiya , Takashi Ando , Masahiko Ogino , Akihiro Miyauchi
发明人： Ryuta Washiya , Takashi Ando , Masahiko Ogino , Akihiro Miyauchi
IPC分类号： G11B3/00 , B29C59/16
CPC分类号： B29C35/0888 , B29C37/0053 , B29C2035/0827 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G11B7/263
摘要： A method of imprinting a microstructure comprising: contacting a stamper comprising a pattern layer with the microstructure of the order of from micrometers to nanometers in one face of the pattern layer and a substrate supporting the pattern layer with an imprinting member having a deformable layer to which the microstructure is imprinted, wherein the pattern layer is supported on a round surface having a prescribed radius of curvature of the substrate, the center of the round surface protruding towards the rear face of the pattern layer; causing the deformable layer on the imprinting member; and separating the stamper from the cured deformable layer.
摘要翻译：一种压印微结构的方法，包括：将包含图案层的压模与图案层的一个表面中的微米级至数毫米级的微结构接触;以及支撑图案层的基板，其具有可变形层的压印构件，印刷微结构，其中图案层被支撑在具有规定的基底曲率半径的圆形表面上，圆形表面的中心朝向图案层的背面突出; 使压印构件上的可变形层产生; 以及将所述压模与所述固化的可变形层分离。

86. 发明申请

US20090140306A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20090140306A1
公开(公告)日：2009-06-04
申请号：US12314804
申请日：2008-12-17
申请人： Takashi Ando
发明人： Takashi Ando
IPC分类号： H01L27/115 , H01L21/8242 , H01L21/70 , H01L29/68
CPC分类号： H01L27/11507 , H01L27/11502 , H01L28/55
摘要： There is formed a gate electrode (word line) via a gate insulating film on a semiconductor substrate, the gate electrode extending in the direction inclining at an angle of approximately 45 degrees to the extending direction of an element region. The element region is divided into three portions by the two gate electrodes. In each element region portion, two MOS transistors are provided. A bit line is connected to a W plug provided in the central region portion and lower electrodes of two ferroelectric capacitors are connected to other W plugs provided in both end region portions. The extending direction of the bit line inclines approximately 45 degrees to the extending direction of the element region.
摘要翻译：通过半导体衬底上的栅极绝缘膜形成栅电极（字线），栅电极沿与元件区域的延伸方向大致45度的角度倾斜的方向延伸。元件区域被两个栅电极分成三部分。在每个元件区域部分中，提供两个MOS晶体管。位线连接到设置在中央区域部分的W插头，两个铁电电容器的下电极连接到设置在两个端部区域中的其他W插头。位线的延伸方向相对于元件区域的延伸方向倾斜约45度。

87. 发明申请

US20090082571A1 Intermediates of 2-substituted carbapenem derivatives and process for production thereof 审中-公开
标题翻译： 2-取代的碳青霉烯衍生物的中间体及其制备方法
公开(公告)号：US20090082571A1
公开(公告)日：2009-03-26
申请号：US12289750
申请日：2008-11-03
申请人： Toshiro Sasaki , Takashi Ando , Takahiro Imai , Dai Kubota , Eiki Shitara , Kunio Atsumi
发明人： Toshiro Sasaki , Takashi Ando , Takahiro Imai , Dai Kubota , Eiki Shitara , Kunio Atsumi
IPC分类号： C07D513/04
CPC分类号： C07D513/04 , C07F9/6561 , Y02P20/55
摘要： The present invention relates to compounds represented by formula (1) and a process for producing the same. The use of these compounds can realize the production of carbapenem derivatives having potent antimicrobial activity and a wide antimicrobial spectrum in a safe and cost-effective manner.
摘要翻译：本发明涉及由式（1）表示的化合物及其制备方法。这些化合物的使用可以以安全和成本有效的方式实现具有有效抗微生物活性和广谱抗菌谱的碳青霉烯衍生物的生产。

88. 发明申请

US20090036685A1 Process for Producing Imidazothiazole Derivatives 审中-公开
标题翻译：生产咪唑噻唑衍生物的方法
公开(公告)号：US20090036685A1
公开(公告)日：2009-02-05
申请号：US11989139
申请日：2006-07-21
申请人： Dai Kubota , Yasuo Yamamoto , Toshiro Sasaki , Takashi Ando , Eiki Shitara , Katsuya Sakata , Kenji Suzuki
发明人： Dai Kubota , Yasuo Yamamoto , Toshiro Sasaki , Takashi Ando , Eiki Shitara , Katsuya Sakata , Kenji Suzuki
IPC分类号： C07D401/14
CPC分类号： C07D519/00 , C07D513/04
摘要： Disclosed is a process for producing an imidazothiazole derivative of formula (I) useful as an intermediate for the production of carbapenem derivatives having potent antimicrobial activity and a broad antimicrobial spectrum, that is, a novel method for nicotinoylating an imidazo[5,1-b]thiazole ring at its 7-position. The process comprises reacting a compound of formula (II) with a compound of formula (III).
摘要翻译：公开了一种制备式（I）的咪唑并噻唑衍生物的方法，其用作制备具有有效抗微生物活性和广谱抗菌谱的碳青霉烯衍生物的中间体，即咪唑并[5,1-b ]噻唑环。该方法包括使式（II）化合物与式（III）化合物反应。

89. 发明授权

US07390678B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07390678B2
公开(公告)日：2008-06-24
申请号：US11094820
申请日：2005-03-31
申请人： Wensheng Wang , Takashi Ando , Yukinobu Hikosaka
发明人： Wensheng Wang , Takashi Ando , Yukinobu Hikosaka
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L21/32136 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： A PLZT film (30) is formed as the material film of a capacitor dielectric film and a top electrode film (31) is formed on the PLZT film (30). The top electrode film (31) comprises two IrOx films having different composition. Subsequently, back face of a semiconductor substrate (11) is cleaned and an Ir adhesion film (32) is formed on the top electrode film (31). Substrate temperature is set at 400° C. or above at that time. Thereafter, a TiN film and a TEOS film are formed sequentially as a hard mask. In such a method, carbon remaining on the top electrode film (31) after cleaning the back face is discharged into the chamber while the temperature of the semiconductor substrate (11) is kept at 400° C. or above in order to form the Ir adhesion film (32). Consequently, adhesion is enhanced between a TiN film being formed subsequently and the Ir adhesion film (32) thus preventing the TiN film from being stripped.
摘要翻译：形成PLZT膜（30）作为电容器电介质膜的材料膜，并且在PLZT膜（30）上形成顶部电极膜（31）。顶部电极膜（31）包括具有不同组成的两个IrO x膜。随后，清洁半导体衬底（11）的背面并在顶部电极膜（31）上形成Ir粘附膜（32）。此时基板温度设定在400℃以上。此后，依次形成TiN膜和TEOS膜作为硬掩模。在这种方法中，清洁背面后残留在顶部电极膜（31）上的碳被排出到室内，同时半导体衬底（11）的温度保持在400℃以上，以形成Ir 粘合膜（32）。因此，随后形成的TiN膜与Ir粘附膜（32）之间的粘附性增强，从而防止TiN膜被剥离。

90. 发明授权

US07336116B2 Clock supply circuit 有权
标题翻译：时钟供电电路
公开(公告)号：US07336116B2
公开(公告)日：2008-02-26
申请号：US11342568
申请日：2006-01-31
申请人： Akio Hirata , Takahiro Ichinomiya , Takashi Ando
发明人： Akio Hirata , Takahiro Ichinomiya , Takashi Ando
IPC分类号： G06F1/04 , H03K3/00
CPC分类号： G06F1/10
摘要： The clock supply circuit of the present invention comprises a plurality of clock supply paths and a clock gate circuit. The clock supply paths branch a clock signal and supply each of the branched clock signals to a plurality of sequential circuits via a buffer. The clock gate circuit is inserted at least to one of the clock supply paths, which lets through the clock signals when a control signal is in a first logic state and, when the control signal is in a second logic state, outputs an inversion signal of a logic level that is outputted in a previous occasion where the control signal in the second logic state is applied.
摘要翻译：本发明的时钟供给电路包括多个时钟供给路径和时钟门电路。时钟供应路径分支时钟信号，并且经由缓冲器将每个分支时钟信号提供给多个顺序电路。时钟门电路至少插入到时钟供给路径中的一个，当控制信号处于第一逻辑状态时，时钟供给路径通过时钟信号，并且当控制信号处于第二逻辑状态时，输出反相信号在施加第二逻辑状态的控制信号的前一时刻输出的逻辑电平。

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