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81. 发明授权

US5601938A Carbon aerogel electrodes for direct energy conversion 失效
标题翻译：碳气凝胶电极，用于直接能量转换
公开(公告)号：US5601938A
公开(公告)日：1997-02-11
申请号：US183876
申请日：1994-01-21
申请人： Steven T. Mayer , James L. Kaschmitter , Richard W. Pekala
发明人： Steven T. Mayer , James L. Kaschmitter , Richard W. Pekala
IPC分类号： H01M4/92 , H01M4/96 , H01M8/08
CPC分类号： H01M4/96 , H01M8/08 , H01M2300/0082 , H01M4/92
摘要： A direct energy conversion device, such as a fuel cell, using carbon aerogel electrodes, wherein the carbon aerogel is loaded with a noble catalyst, such as platinum or rhodium and soaked with phosphoric acid, for example. A separator is located between the electrodes, which are placed in a cylinder having plate current collectors positioned adjacent the electrodes and connected to a power supply, and a pair of gas manifolds, containing hydrogen and oxygen positioned adjacent the current collectors. Due to the high surface area and excellent electrical conductivity of carbon aerogels, the problems relative to high polarization resistance of carbon composite electrodes conventionally used in fuel cells are overcome.
摘要翻译：直接能量转换装置，例如使用碳气凝胶电极的燃料电池，其中碳气凝胶装载有贵金属催化剂，例如铂或铑，并用磷酸浸泡。分离器位于电极之间，其被放置在具有邻近电极定位并且连接到电源的板集流器的气缸中，以及一对包含位于集流器附近的氢和氧的气体歧管。由于碳气凝胶的高表面积和优异的导电性，克服了常规用于燃料电池中的碳复合电极的高极化电阻的问题。

82. 发明授权

US5336274A Method for forming a cell separator for use in bipolar-stack energy storage devices 失效
标题翻译：用于形成用于双极堆叠储能装置的电池隔板的方法
公开(公告)号：US5336274A
公开(公告)日：1994-08-09
申请号：US90881
申请日：1993-07-08
申请人： Steven T. Mayer , John H. Feikert , James L. Kaschmitter , Richard W. Pekala
发明人： Steven T. Mayer , John H. Feikert , James L. Kaschmitter , Richard W. Pekala
IPC分类号： H01G9/00 , H01G9/155 , H01M6/48 , H01M8/02 , H01M6/00 , H01M2/16 , H01M6/46
CPC分类号： H01G9/155 , H01M6/48 , H01M8/0213 , Y02E60/13 , Y10T29/49114
摘要： An improved multi-cell electrochemical energy storage device, such as a battery, fuel cell, or double layer capacitor using a cell separator which allows cells to be stacked and interconnected with low electrical resistance and high reliability while maximizing packaging efficiency. By adding repeating cells, higher voltages can be obtained. The cell separator is formed by applying an organic adhesive on opposing surfaces of adjacent carbon electrodes or surfaces of aerogel electrodes of a pair of adjacent cells prior to or after pyrolysis thereof to form carbon aerogel electrodes. The cell separator is electronically conductive, but ionically isolating, preventing an electrolytic conduction path between adjacent cells in the stack.
摘要翻译：改进的多单元电化学能量存储装置，例如电池，燃料电池或使用电池隔板的双层电容器，其允许电池以低电阻和高可靠性堆叠和互连，同时最大限度地提高包装效率。通过添加重复单元，可以获得更高的电压。通过在热分解之前或之后，在相邻的碳电极或一对相邻电池的气凝胶电极的表面的相对表面上施加有机粘合剂来形成电池隔板，以形成碳气凝胶电极。细胞分离器是电子导电的，但是离子隔离，防止堆叠中相邻细胞之间的电解传导路径。

83. 发明授权

US08795482B1 Selective electrochemical accelerator removal 有权
标题翻译：选择性电化学促进剂去除
公开(公告)号：US08795482B1
公开(公告)日：2014-08-05
申请号：US13572483
申请日：2012-08-10
申请人： Steven T. Mayer , Marshall R. Stowell , John S. Drewery , Richard S. Hill , Timothy M. Archer , Avishai Kepten
发明人： Steven T. Mayer , Marshall R. Stowell , John S. Drewery , Richard S. Hill , Timothy M. Archer , Avishai Kepten
IPC分类号： C25D5/02 , C25F3/16
CPC分类号： B23H5/08 , C25F3/16 , H01L21/02068 , H01L21/2885 , H01L21/32115 , H01L21/7684
摘要： Methods and apparatus are provided for planar metal plating on a workpiece having a surface with recessed regions and exposed surface regions; comprising the steps of: causing a plating accelerator to become attached to said surface including the recessed and exposed surface regions; selectively removing the plating accelerator from the exposed surface regions without performing substantial metal plating on the surface; and after removal of plating accelerator is at least partially complete, plating metal onto the surface, whereby the plating accelerator remaining attached to the surface increases the rate of metal plating in the recessed regions relative to the rate of metal plating in the exposed surface regions.
摘要翻译：提供了用于在具有凹陷区域和暴露表面区域的表面的工件上进行平面金属电镀的方法和装置; 包括以下步骤：使电镀加速器附着到包括凹入和暴露的表面区域的所述表面; 选择性地从暴露的表面区域去除电镀加速器，而不在表面上进行实质的金属电镀; 在去除电镀促进剂至少部分完成后，将金属镀在表面上，由此保持附着在表面上的电镀加速剂相对于露出的表面区域中的金属电镀速率增加凹陷区域中的金属电镀速率。

84. 发明申请

US20140190529A1 APPARATUS AND METHOD FOR EDGE BEVEL REMOVAL OF COPPER FROM SILICON WAFERS 审中-公开
标题翻译：用于边缘去除硅膜的铜的装置和方法
公开(公告)号：US20140190529A1
公开(公告)日：2014-07-10
申请号：US13857883
申请日：2013-04-05
申请人： Kousik Ganesan , Shanthinath Ghongadi , Tariq Majid , Aaron Labrie , Steven T. Mayer
发明人： Kousik Ganesan , Shanthinath Ghongadi , Tariq Majid , Aaron Labrie , Steven T. Mayer
IPC分类号： H01L21/67 , H01L21/02
CPC分类号： H01L21/6708 , H01L21/02068 , H01L21/02087 , H01L21/0209 , H01L21/32134 , H01L21/67745 , H01L21/68735 , H01L21/68785
摘要： Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.
摘要翻译：描述了用于从半导体晶片的边缘斜面区域去除金属的化学蚀刻方法和相关模块。在晶片的边缘斜面区域上施加蚀刻剂之前，该方法和系统提供了薄层的预漂洗液体。蚀刻剂较少稀释，并通过稀薄的冲洗液层更快地扩散。公开了一种边缘斜面去除实施例，其涉及在减少加工时间，使金属锥度变窄并允许随后的化学机械抛光方面特别有效。

85. 发明授权

US08603305B2 Electrolyte loop with pressure regulation for separated anode chamber of electroplating system 有权
公开(公告)号：US08603305B2
公开(公告)日：2013-12-10
申请号：US13051822
申请日：2011-03-18
申请人： Robert Rash , Richard Abraham , David W. Porter , Steven T. Mayer
发明人： Robert Rash , Richard Abraham , David W. Porter , Steven T. Mayer
IPC分类号： C25D17/00 , C25D21/16 , C25D21/12 , C25D7/12
CPC分类号： C25D5/08 , C25D5/006 , C25D17/00 , C25D17/002 , C25D21/04 , C25D21/06 , C25D21/14 , C25D21/18
摘要： An electrolyte, and particularly anolyte, may be circulated via an open loop having a pressure regulator, so that the pressure in the plating chamber is maintained at a constant (or substantially constant) value with respect to atmospheric pressure. In these embodiments, a pressure regulator is in fluid communication with the anode chamber.

86. 发明申请

US20130292254A1 METHODS AND APPARATUSES FOR CLEANING ELECTROPLATING SUBSTRATE HOLDERS 审中-公开
标题翻译：清洗电镀基板支架的方法和装置
公开(公告)号：US20130292254A1
公开(公告)日：2013-11-07
申请号：US13852767
申请日：2013-03-28
申请人： Santosh Kumar , Bryan L. Buckalew , Steven T. Mayer , Thomas Ponnuswamy , Chad Michael Hosack , Robert Rash , Lee Peng Chua , David Porter
发明人： Santosh Kumar , Bryan L. Buckalew , Steven T. Mayer , Thomas Ponnuswamy , Chad Michael Hosack , Robert Rash , Lee Peng Chua , David Porter
IPC分类号： C25D17/00
CPC分类号： B08B3/022 , B08B3/041 , C25D7/12 , C25D17/00 , C25D17/001 , C25D21/00 , C25D21/12 , H01L21/67051
摘要： Disclosed herein are methods of cleaning a lipseal and/or cup bottom of an electroplating device by removing metal deposits accumulated in prior electroplating operations. The methods may include orienting a nozzle such that it is pointed substantially at the inner circular edge of the lipseal and/or cup bottom, and dispensing a stream of cleaning solution from the nozzle such that the stream contacts the inner circular edge of the lipseal and/or cup bottom while they are being rotated, removing metal deposits. In some embodiments, the stream has a velocity component against the rotational direction of the lipseal and/or cup bottom. In some embodiments, the deposits may include a tin/silver alloy. Also disclosed herein are cleaning apparatuses for mounting in electroplating devices and for removing electroplated metal deposits from their lipseals and/or cup bottoms. In some embodiments, the cleaning apparatuses may include a jet nozzle.
摘要翻译：本文公开了通过去除在现有电镀操作中积累的金属沉积物来清洁电镀装置的唇密封和/或杯底的方法。所述方法可以包括使喷嘴定向成使得其基本上指向唇密封件和/或杯底部的内圆形边缘，并且从喷嘴分配清洁溶液流，使得流接触唇塞的内圆形边缘，并且 /或杯底，同时旋转，去除金属沉积物。在一些实施例中，流具有抵抗唇密封和/或杯底的旋转方向的速度分量。在一些实施例中，沉积物可以包括锡/银合金。本文还公开了用于安装在电镀装置中并用于从其密封件和/或杯底部去除电镀金属沉积物的清洁装置。在一些实施例中，清洁设备可以包括喷嘴。

87. 发明授权

US08530359B2 Modulated metal removal using localized wet etching 有权
标题翻译：使用局部湿蚀刻调制金属去除
公开(公告)号：US08530359B2
公开(公告)日：2013-09-10
申请号：US12462424
申请日：2009-08-04
申请人： Steven T. Mayer , David W. Porter
发明人： Steven T. Mayer , David W. Porter
IPC分类号： H01I21/302
CPC分类号： H01L21/6708 , C23F1/08 , C23F1/34 , C25F3/12 , H01L21/32115 , H01L21/32134
摘要： An apparatus for wet etching metal from a semiconductor wafer comprises a wafer holder for rotating a wafer and a plurality of nozzles for applying separate flow patterns of etching liquid to the surface of the wafer. The flow patterns impact the wafer in distinct band-like impact zones. The flow pattern of etching liquid from at least one nozzle is modulated during a total etching time control the cumulative etching rate in one local etch region relative to the cumulative etching rate in one or more other local etch regions. Some embodiments include a lower etch chamber and an upper rinse chamber separated by a horizontal splash shield. Some embodiments include a retractable vertical splash shield used to prevent splashing of etching liquid onto the inside walls of a treatment container. An etch-liquid delivery system includes a plurality of nozzle flow paths having corresponding nozzle flow resistances, and a plurality of drain flow paths having corresponding drain flow resistances. Nozzle flow resistances and drain flow resistances are matched so that switching the flow from a nozzle to a corresponding drain flow path does not change the flow rate of etching liquid through other nozzles. A non-wafer-contacting measuring device measures a metal thickness on a rotating semiconductor wafer during metal wet etching by immersing a plurality of electrodes in etching liquid in close proximity to the wafer surface of the rotating wafer and determining electrical resistance between a plurality of electrodes.
摘要翻译：用于从半导体晶片湿式蚀刻金属的设备包括用于旋转晶片的晶片保持器和用于将分离的蚀刻液体的流动图案施加到晶片的表面的多个喷嘴。流动模式影响晶片在不同的带状冲击区域。在总腐蚀时间期间，调制来自至少一个喷嘴的蚀刻液体的流动模式，以控制一个局部蚀刻区域中相对于一个或多个其它局部蚀刻区域中的累积蚀刻速率的累积蚀刻速率。一些实施例包括由水平防溅罩隔开的下蚀刻室和上冲洗室。一些实施例包括用于防止蚀刻液体溅射到处理容器的内壁上的可伸缩垂直防溅屏蔽。蚀刻液输送系统包括具有相应的喷嘴流动阻力的多个喷嘴流动路径和具有相应的漏极流动阻力的多个排出流动路径。喷嘴流阻和排流阻力匹配，使得从喷嘴到相应的排水流路的流动不会改变通过其它喷嘴的蚀刻液的流量。非晶片接触测量装置通过将多个电极浸入在旋转晶片的晶片表面附近的蚀刻液中来测量金属湿蚀刻期间的旋转半导体晶片上的金属厚度，并且确定多个电极之间的电阻。

88. 发明授权

US08500983B2 Pulse sequence for plating on thin seed layers 有权
标题翻译：用于在薄种子层上电镀的脉冲序列
公开(公告)号：US08500983B2
公开(公告)日：2013-08-06
申请号：US12786329
申请日：2010-05-24
申请人： Thomas A. Ponnuswamy , Bryan Pennington , Clifford Berry , Bryan L. Buckalew , Steven T. Mayer
发明人： Thomas A. Ponnuswamy , Bryan Pennington , Clifford Berry , Bryan L. Buckalew , Steven T. Mayer
IPC分类号： C25D5/18 , C25D7/12
CPC分类号： C25D7/123 , C25D3/38 , C25D5/18 , C25D17/001
摘要： A plating protocol is employed to control plating of metal onto a wafer comprising a conductive seed layer. Initially, the protocol employs cathodic protection as the wafer is immersed in the plating solution. In certain embodiments, the current density of the wafer is constant during immersion. In a specific example, potentiostatic control is employed to produce a current density in the range of about 1.5 to 20 mA/cm2. The immersion step is followed by a high current pulse step. During bottom up fill inside the features of the wafer, a constant current or a current with a micropulse may be used. This protocol may protect the seed from corrosion while enhancing nucleation during the initial stages of plating.
摘要翻译：使用电镀方案来控制金属镀在包含导电种子层的晶片上。最初，当晶片浸入电镀溶液中时，协议采用阴极保护。在某些实施例中，晶片的电流密度在浸入期间是恒定的。在具体实例中，使用恒电位控制来产生约1.5至20mA / cm 2范围内的电流密度。浸没步骤之后是高电流脉冲步骤。在向下填充晶片的特征内部时，可以使用恒定电流或具有微脉冲的电流。该方案可以保护种子免受腐蚀，同时在电镀初始阶段增强成核。

89. 发明授权

US08268154B1 Selective electrochemical accelerator removal 有权
标题翻译：选择性电化学促进剂去除
公开(公告)号：US08268154B1
公开(公告)日：2012-09-18
申请号：US12860787
申请日：2010-08-20
申请人： Steven T. Mayer , John S. Drewery , Richard S. Hill , Timothy M. Archer , Avishai Kepten
发明人： Steven T. Mayer , John S. Drewery , Richard S. Hill , Timothy M. Archer , Avishai Kepten
IPC分类号： C25D5/02
CPC分类号： B23H5/08 , C25F3/16 , H01L21/02068 , H01L21/2885 , H01L21/32115 , H01L21/7684
摘要： Methods and apparatus are provided for planar metal plating on a workpiece having a surface with recessed regions and exposed surface regions; comprising the steps of: causing a plating accelerator to become attached to said surface including the recessed and exposed surface regions; selectively removing the plating accelerator from the exposed surface regions without performing substantial metal plating on the surface; and after removal of plating accelerator is at least partially complete, plating metal onto the surface, whereby the plating accelerator remaining attached to the surface increases the rate of metal plating in the recessed regions relative to the rate of metal plating in the exposed surface regions.
摘要翻译：提供了用于在具有凹陷区域和暴露表面区域的表面的工件上进行平面金属电镀的方法和装置; 包括以下步骤：使电镀加速器附着到包括凹入和暴露的表面区域的所述表面; 选择性地从暴露的表面区域去除电镀加速器，而不在表面上进行实质的金属电镀; 在去除电镀促进剂至少部分完成后，将金属镀在表面上，由此保持附着在表面上的电镀加速剂相对于露出的表面区域中的金属电镀速率增加凹陷区域中的金属电镀速率。

90. 发明授权

US08262871B1 Plating method and apparatus with multiple internally irrigated chambers 有权
标题翻译：具有多个内部灌溉室的电镀方法和装置
公开(公告)号：US08262871B1
公开(公告)日：2012-09-11
申请号：US12640992
申请日：2009-12-17
申请人： Steven T. Mayer , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Jingbin Feng
发明人： Steven T. Mayer , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Jingbin Feng
IPC分类号： C25B9/00 , C25D17/00
CPC分类号： C25D17/001 , C25D5/08 , C25D17/002 , C25D17/008
摘要： An apparatus for electroplating a layer of metal onto a work piece surface includes a membrane separating the chamber of the apparatus into a catholyte chamber and an anolyte chamber. In the catholyte chamber is a catholyte manifold region that includes a catholyte manifold and at least one flow distribution tube. The catholyte manifold and at least one flow distribution tube serve to mix and direct catholyte flow in the catholyte chamber. The provided configuration effectively reduces failure and improves the operational ranges of the apparatus.
摘要翻译：用于将金属层电镀到工件表面上的装置包括将装置的室分离成阴极电解液室和阳极电解液室的膜。在阴极电解液室中是阴极电解液歧管区域，其包括阴极电解液歧管和至少一个流量分布管。阴极电解液歧管和至少一个分流管用于混合和引导阴极电解液在阴极电解液室中的流动。所提供的配置有效地减少故障并改善设备的操作范围。

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