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81. 发明申请

US20100124822A1 APPARATUSES FOR ADJUSTING ELECTRODE GAP IN CAPACITIVELY-COUPLED RF PLASMA REACTOR 有权
标题翻译：用于调节电容耦合RF等离子体反应器中电极隙的装置
公开(公告)号：US20100124822A1
公开(公告)日：2010-05-20
申请号：US12693066
申请日：2010-01-25
申请人： Rajinder Dhindsa , Eric H. Lenz , Andy W. DeSepte , Lumin Li
发明人： Rajinder Dhindsa , Eric H. Lenz , Andy W. DeSepte , Lumin Li
IPC分类号： H01L21/3065 , C23F1/00 , C23C16/00 , B05C13/00
CPC分类号： H01J37/32568 , H01J37/32091
摘要： A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.
摘要翻译：等离子体处理室包括构造成中和大气负荷的悬臂组件。该室包括围绕内部区域并具有形成在其中的开口的壁。悬臂组件包括用于支撑腔室内的衬底的衬底支撑件。悬臂组件延伸穿过开口，使得一部分位于室外。所述腔室包括致动机构，其可操作以相对于所述壁移动所述悬臂组件。

82. 发明申请

US20090204342A1 METHODS AND APPARATUS FOR WAFER AREA PRESSURE CONTROL IN AN ADJUSTABLE GAP PLASMA CHAMBER 有权
标题翻译：可调节气隙等离子体室中的压力区域压力控制的方法和装置
公开(公告)号：US20090204342A1
公开(公告)日：2009-08-13
申请号：US12367443
申请日：2009-02-06
申请人： Rajinder Dhindsa , James H. Rogers
发明人： Rajinder Dhindsa , James H. Rogers
IPC分类号： G01N33/00 , H01L21/3065 , G01L7/00
CPC分类号： H01J37/32642 , H01J37/32449 , H01J37/32623
摘要： In a plasma processing chamber, a method and an arrangement to stabilize pressure are provided. The method includes providing coarse pressure adjustments in an open-loop manner and thereafter providing fine pressure adjustments in a closed-loop manner. The coarse pressure adjustments are performed by rapidly re-position confinement rings employing an assumed linear relationship between the conductance and the confinement rings position to bring the pressure in the plasma generating region quickly to roughly a desired set point. The fine pressure adjustments are performed by at least employing mechanical vacuum pump(s), turbo pump(s), confinement ring positioning and/or combinations thereof to achieve a derive pressure set point.
摘要翻译：在等离子体处理室中，提供了稳定压力的方法和装置。该方法包括以开环方式提供粗调压，然后以闭环方式提供精细的压力调节。通过使用假定的电导和限制环位置之间的线性关系快速重新定位限制环来使等离子体产生区域中的压力快速地达到大致期望的设定点来执行粗调压力调节。通过至少采用机械真空泵，涡轮泵，限制环定位和/或其组合来实现精细压力调节以实现导出压力设定点。

83. 发明申请

US20090090695A1 Yttria insulator ring for use inside a plasma chamber 审中-公开
标题翻译：用于等离子体室内的氧化钇绝缘体环
公开(公告)号：US20090090695A1
公开(公告)日：2009-04-09
申请号：US12230404
申请日：2008-08-28
申请人： Babak Kadkhodayan , Rajinder Dhindsa , Yuehong Fu
发明人： Babak Kadkhodayan , Rajinder Dhindsa , Yuehong Fu
IPC分类号： H01L21/3065 , B23P19/00
CPC分类号： C04B35/505 , C04B2235/725 , C04B2235/728 , C04B2235/77 , C04B2235/9692 , H01J37/32642 , H01J2237/0206 , Y10T29/4973
摘要： A yttria insulator ring for use in a plasma processing apparatus is provided to minimize arcing between the apparatus and a ground extension, while also increasing a mean time between cleanings (MTBC). The yttria insulator ring may be located between a ground extension and a plasma generation zone, or gap, of the chamber of the apparatus, as well as between an edge ring and the ground extension. Compared to a quartz ring, the yttria insulator ring can also provide improved semiconductor substrate uniformity because of improved RF coupling as a result of decreased reactivity and increased dielectric constant.
摘要翻译：提供用于等离子体处理装置的氧化钇绝缘体环，以最小化装置和地面延伸部之间的电弧，同时也增加清洗之间的平均时间（MTBC）。氧化钇绝缘体环可以位于设备的室的接地延伸部和等离子体产生区域或间隙之间，以及边缘环和接地延伸部之间。与石英环相比，氧化钇绝缘体环也可以提供改善的半导体衬底均匀性，因为由于反应性降低和介电常数增加导致RF耦合改善。

84. 发明申请

US20080171444A1 Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor 有权
标题翻译：用于调整电容耦合射频等离子体反应器中电极间隙的装置
公开(公告)号：US20080171444A1
公开(公告)日：2008-07-17
申请号：US11653869
申请日：2007-01-17
申请人： Rajinder Dhindsa , Eric H. Lenz , Andy W. DeSepte , Lumin Li
发明人： Rajinder Dhindsa , Eric H. Lenz , Andy W. DeSepte , Lumin Li
IPC分类号： H01L21/3065
CPC分类号： H01J37/32568 , H01J37/32091
摘要： A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.
摘要翻译：等离子体处理室包括构造成中和大气负荷的悬臂组件。该室包括围绕内部区域并具有形成在其中的开口的壁。悬臂组件包括用于支撑腔室内的衬底的衬底支撑件。悬臂组件延伸穿过开口，使得一部分位于室外。所述腔室包括致动机构，其可操作以相对于所述壁移动所述悬臂组件。

85. 发明授权

US07393432B2 RF ground switch for plasma processing system 有权
标题翻译：射频接地开关等离子体处理系统
公开(公告)号：US07393432B2
公开(公告)日：2008-07-01
申请号：US10953229
申请日：2004-09-29
申请人： Rajinder Dhindsa , Felix Kozakevich , Eric Lenz , Russell Martin
发明人： Rajinder Dhindsa , Felix Kozakevich , Eric Lenz , Russell Martin
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/32174 , H01J37/32568
摘要： An arrangement in a plasma processing system for selectively providing an RF grounding path between an electrode and ground. The arrangement includes an RF conduction path structure and an annular structure. The annular structure and the RF conduction path structure having two relative positions relative to one another. A first relative position of the two relative positions is characterized by the annular structure electrically coupling with the RF conduction path structure to provide a ground to the RF conduction path structure. A second relative position of the two relative positions is characterized by the annular structure being electrically uncoupled from the RF conduction path.
摘要翻译：等离子体处理系统中的布置，用于选择性地提供电极和地面之间的RF接地路径。该装置包括RF传导路径结构和环形结构。环形结构和RF传导路径结构具有相对于彼此的两个相对位置。两个相对位置的第一相对位置的特征在于环形结构与RF传导路径结构电耦合以提供到RF传导路径结构的接地。两个相对位置的第二相对位置的特征在于环形结构与RF传导路径电耦合。

86. 发明申请

US20080149596A1 Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber 有权
标题翻译：用于控制电容耦合等离子体处理室中的气体流动电导的方法和装置
公开(公告)号：US20080149596A1
公开(公告)日：2008-06-26
申请号：US11641670
申请日：2006-12-20
申请人： Rajinder Dhindsa , Jerrel K. Antolik , Scott Stevenot
发明人： Rajinder Dhindsa , Jerrel K. Antolik , Scott Stevenot
IPC分类号： C23F1/00 , C23C16/513 , C23F1/08 , B05C11/00
CPC分类号： C23C16/455 , C23C16/4417 , C23C16/45517 , C23C16/45536 , C23C16/45587 , C23C16/45591 , C23C16/52 , H01J37/3244 , H01J37/32449 , H01J37/32623 , H01J37/32633 , H01J37/32642 , H01J37/32816 , H01J37/32834 , H01J37/3299 , H01L21/3065
摘要： Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the gap is excited into the plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a set of slots formed therein, and a mechanism for controlling gas flow through the slots.
摘要翻译：提供了用于控制在等离子体处理装置中形成的等离子体的流动电导的装置，其包括与下电极相对的上电极，以在其间形成间隙。下电极适于支撑衬底并耦合到RF电源。注入到间隙中的过程气体在操作期间被激发成等离子体状态。该装置包括同心地围绕下电极并具有形成在其中的一组槽的接地环，以及用于控制通过槽的气流的机构。

87. 发明申请

US20080090417A1 Upper electrode backing member with particle reducing features 有权
标题翻译：具有减少粒子特性的上部电极背衬部件
公开(公告)号：US20080090417A1
公开(公告)日：2008-04-17
申请号：US11639264
申请日：2006-12-15
申请人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty
发明人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty
IPC分类号： H05H1/24 , C23F1/00 , H01L21/302
CPC分类号： H01J37/32449 , H01J37/32009 , H01J37/32541 , H01J37/3255
摘要： Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.
摘要翻译：等离子体处理装置的组件包括具有气体通道的背衬构件，气体通道连接到具有气体通道的上部电极。为了补偿金属背衬构件和上部电极之间的热膨胀系数的差异，气体通道的定位和尺寸使得它们在环境温度下不对准并且在升高的处理温度下基本上同心。由于热膨胀，弹性粘合材料中可能会产生不均匀的剪切应力。剪切应力可以通过施加不同厚度的弹性粘合材料或使用包括多个片的背衬构件来适应。

88. 发明申请

US20070193688A1 Process tuning gas injection from the substrate edge 有权
标题翻译：从基板边缘处理调整气体注入
公开(公告)号：US20070193688A1
公开(公告)日：2007-08-23
申请号：US11359300
申请日：2006-02-21
申请人： Rajinder Dhindsa , Mukund Srinivasan
发明人： Rajinder Dhindsa , Mukund Srinivasan
IPC分类号： H01L21/306 , C23F1/00 , H01L21/302 , C23C16/00
CPC分类号： H01L21/67069 , C23C16/45521 , C23C16/4585 , H01J37/3244 , H01L21/68735
摘要： Broadly speaking, the embodiments of the present invention provides an improved plasma processing mechanism, apparatus, and method to increase the process uniformity at the very edge of the substrate. In one embodiment, a plasma processing chamber comprises a substrate support configured to receive a substrate, and a plurality of tuning gas injection holes surrounding the edge of the substrate, wherein the tuning gas injection holes supplies a tuning gas to the edge of the substrate during plasma processing of the substrate.
摘要翻译：一般来说，本发明的实施例提供了改进的等离子体处理机构，装置和方法，以增加基板的非常边缘处的工艺均匀性。在一个实施例中，等离子体处理室包括被配置为接收衬底的衬底支撑件和围绕衬底边缘的多个调谐气体注入孔，其中调谐气体注入孔在衬底的边缘提供调谐气体基板的等离子体处理。

89. 发明申请

US20060118518A1 High aspect ratio etch using modulation of RF powers of various frequencies 有权
公开(公告)号：US20060118518A1
公开(公告)日：2006-06-08
申请号：US10737022
申请日：2003-12-15
申请人： Camelia Rusu , Rajinder Dhindsa , Eric Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
发明人： Camelia Rusu , Rajinder Dhindsa , Eric Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
IPC分类号： B44C1/22 , H01L21/306
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32155 , H01J2237/3347 , H01L21/31116 , H01L21/67063 , H01L21/67069
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

90. 发明申请

US20050264218A1 Plasma processor with electrode responsive to multiple RF frequencies 有权
标题翻译：等离子体处理器，电极响应多个RF频率
公开(公告)号：US20050264218A1
公开(公告)日：2005-12-01
申请号：US10855706
申请日：2004-05-28
申请人： Rajinder Dhindsa , Felix Kozakevich , Dave Trussell
发明人： Rajinder Dhindsa , Felix Kozakevich , Dave Trussell
IPC分类号： H01J37/32 , H01J7/24
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165 , H01J37/3299
摘要： A plasma processor processing a workpiece includes sources having frequencies 2 MHz, 27 MHz, and 60 MHz, applied by three matching networks to an electrode in a vacuum chamber including the workpiece. Alternatively 60 MHz is applied to a second electrode by a fourth matching network. The matching networks, substantially tuned to the frequencies of the sources driving them, include series inductances so the 2 MHz inductance exceeds the 27 MHz network inductance, and the 27 MHz network inductance exceeds the inductances of the 60 MHz networks. The matching networks attenuate by at least 26 DB the frequencies of the sources that do not drive them. Shunt inductors between the 27 and 60 MHz sources decouple 2 MHz from the 27 and 60 MHz sources. A series resonant circuit (resonant to about 5 MHz) shunts the 2 MHz network and the electrode to help match the 2 MHz source to the electrode.
摘要翻译：处理工件的等离子体处理器包括频率为2MHz，27MHz和60MHz的源，由三个匹配网络施加到包括工件的真空室中的电极。或者通过第四匹配网络将60MHz施加到第二电极。基本上调谐到驱动它们的源的频率的匹配网络包括串联电感，因此2MHz电感超过27MHz网络电感，并且27MHz网络电感超过60MHz网络的电感。匹配网络衰减至少26 DB的驱动它们的源的频率。 27和60 MHz信号源之间的并联电感将2 MHz与27 MHz和60 MHz信号源分离。串联谐振电路（谐振到约5 MHz）分流2 MHz网络和电极，以帮助将2 MHz源极与电极相匹配。

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