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1. 发明授权

US08703249B2 Techniques for reducing arcing-related damage in a clamping ring of a plasma processing system 有权
标题翻译：用于降低等离子体处理系统的夹紧环中的电弧相关损伤的技术
公开(公告)号：US08703249B2
公开(公告)日：2014-04-22
申请号：US11201939
申请日：2005-08-10
申请人： Jose Tong , Eric H. Lenz
发明人： Jose Tong , Eric H. Lenz
IPC分类号： H05H1/24
CPC分类号： H01J37/32082 , H01L21/67069 , H01L21/68721
摘要： A clamping ring configured to be coupled to a chamber structure of a plasma processing chamber is disclosed. The clamping ring has a plurality of holes for accommodating a plurality of fasteners. The clamping ring includes a plurality of flanges disposed around an outer periphery of the clamping ring, adjacent flanges of the plurality of flanges being disposed such that a hole of the plurality of holes that is disposed in between the adjacent flanges is about equidistant from the adjacent flanges. The plurality of flanges are configured to mate with the chamber structure. The clamping ring and the flanges are dimensioned such that when the plurality of flanges mate with the chamber structure, recesses between adjacent ones of the plurality of flanges form gaps between the clamping ring and the chamber structure.
摘要翻译：公开了一种构造成耦合到等离子体处理室的室结构的夹紧环。夹紧环具有用于容纳多个紧固件的多个孔。夹紧环包括围绕夹紧环的外周设置的多个凸缘，多个凸缘的相邻凸缘被设置成使得设置在相邻凸缘之间的多个孔的孔距离相邻的凸缘大致等距离法兰。多个凸缘构造成与室结构配合。夹紧环和凸缘的尺寸使得当多个凸缘与室结构配合时，相邻的凸缘之间的凹槽在夹紧环和室结构之间形成间隙。

2. 发明授权

US08562272B2 Substrate load and unload mechanisms for high throughput 有权
标题翻译：衬底加载和卸载机制，用于高吞吐量
公开(公告)号：US08562272B2
公开(公告)日：2013-10-22
申请号：US12706397
申请日：2010-02-16
申请人： Eric H. Lenz
发明人： Eric H. Lenz
IPC分类号： B25J11/00 , B25J9/04 , H01L21/677
CPC分类号： H01L21/67196 , H01L21/6719 , H01L21/67742 , H01L21/67778
摘要： In various exemplary embodiments described herein, a system includes a plurality of carrier arms each having concentrically mounted midpoints between opposing ends of the carrier arms with a wafer carrier mounted on each of the opposing ends of the carrier arms. A hub includes a plurality of concentrically mounted drives where each of the plurality of drives is coupled near the midpoint of a respective one of the plurality of carrier arms. Each of the plurality of drives is configured to be controlled independently of the remaining plurality of concentrically mounted drives. A respective motor is coupled to each of the concentrically mounted drives and is configured to move the coupled carrier arm in a rotary manner. A linear wafer transport mechanism moves wafers to or from select ones of the wafer carriers on the plurality of carrier arms to an easy handoff location for a load/unload robot.
摘要翻译：在本文描述的各种示例性实施例中，系统包括多个承载臂，每个承载臂在承载臂的相对端之间具有同心安装的中点，其中晶片载体安装在承载臂的每个相对端上。集线器包括多个同心安装的驱动器，其中多个驱动器中的每一个驱动器在多个承载臂中的相应一个的臂的中点附近耦合。多个驱动器中的每一个被配置为独立于剩余的多个同心安装的驱动器被控制。相应的电动机联接到每个同心安装的驱动器并且被配置成以旋转方式移动联接的行星架臂。线性晶片传送机构将晶片移动到多个载体臂上的或从选定的晶片载体上移动到用于装载/卸载机器人的简单的切换位置。

3. 发明授权

US08080760B2 Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor 有权
标题翻译：用于调整电容耦合射频等离子体反应器中电极间隙的装置
公开(公告)号：US08080760B2
公开(公告)日：2011-12-20
申请号：US12693066
申请日：2010-01-25
申请人： Rajinder Dhindsa , Eric H. Lenz , Andy W. DeSepte , Lumin Li
发明人： Rajinder Dhindsa , Eric H. Lenz , Andy W. DeSepte , Lumin Li
IPC分类号： B23K10/00
CPC分类号： H01J37/32568 , H01J37/32091
摘要： A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.
摘要翻译：等离子体处理室包括构造成中和大气负荷的悬臂组件。该室包括围绕内部区域并具有形成在其中的开口的壁。悬臂组件包括用于支撑腔室内的衬底的衬底支撑件。悬臂组件延伸穿过开口，使得一部分位于室外。所述腔室包括致动机构，其可操作以相对于所述壁移动所述悬臂组件。

4. 发明申请

US20110281435A1 FAST GAS SWITCHING PLASMA PROCESSING APPARATUS 有权
标题翻译：快速开关等离子体加工设备
公开(公告)号：US20110281435A1
公开(公告)日：2011-11-17
申请号：US13189416
申请日：2011-07-22
申请人： S. M. Reza Sadjadi , Zhisong Huang , Jose Tong Sam , Eric H. Lenz , Rajinder Dhindsa
发明人： S. M. Reza Sadjadi , Zhisong Huang , Jose Tong Sam , Eric H. Lenz , Rajinder Dhindsa
IPC分类号： H01L21/311
CPC分类号： H01J37/32091 , H01J37/32155 , H01J37/3244 , H01J37/32449
摘要： A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power.
摘要翻译：提供具有电极等离子体限制区的等离子体室。用于提供第一气体和第二气体的气体分配系统连接到等离子体室，其中气体分配系统可以在小于1秒的时间内基本上替换等离子体区域中的一种气体与另一种气体。用于在第一频率范围内向电极提供功率的第一频率调谐RF电源电连接到至少一个电极，其中第一频率调谐的RF功率源能够最小化反射的RF功率。用于在第一频率范围之外的第二频率范围内为等离子体室提供功率的第二频率调谐RF电源，其中第二频率调谐的RF功率源能够使反射的RF功率最小化。

5. 发明授权

US07867356B2 Apparatus for reducing polymer deposition on a substrate and substrate support 有权
标题翻译：用于减少基板和基板支撑件上的聚合物沉积的装置
公开(公告)号：US07867356B2
公开(公告)日：2011-01-11
申请号：US11802212
申请日：2007-05-21
申请人： Jose Tong , Eric H. Lenz
发明人： Jose Tong , Eric H. Lenz
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01L21/67069 , H01J37/32623 , H01J37/32642 , Y10S156/915
摘要： An adjustable RF coupling ring is capable of reducing a vertical gap between a substrate and a hot edge ring in a vacuum processing chamber. The reduction of the gap reduces polymer deposits on the substrate and electrostatic chuck and improves wafer processing.
摘要翻译：可调节的RF耦合环能够减小真空处理室中的衬底和热边缘环之间的垂直间隙。间隙的减少减少了基板和静电卡盘上的聚合物沉积，并改善了晶片加工。

6. 发明申请

US20100124822A1 APPARATUSES FOR ADJUSTING ELECTRODE GAP IN CAPACITIVELY-COUPLED RF PLASMA REACTOR 有权
标题翻译：用于调节电容耦合RF等离子体反应器中电极隙的装置
公开(公告)号：US20100124822A1
公开(公告)日：2010-05-20
申请号：US12693066
申请日：2010-01-25
申请人： Rajinder Dhindsa , Eric H. Lenz , Andy W. DeSepte , Lumin Li
发明人： Rajinder Dhindsa , Eric H. Lenz , Andy W. DeSepte , Lumin Li
IPC分类号： H01L21/3065 , C23F1/00 , C23C16/00 , B05C13/00
CPC分类号： H01J37/32568 , H01J37/32091
摘要： A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.
摘要翻译：等离子体处理室包括构造成中和大气负荷的悬臂组件。该室包括围绕内部区域并具有形成在其中的开口的壁。悬臂组件包括用于支撑腔室内的衬底的衬底支撑件。悬臂组件延伸穿过开口，使得一部分位于室外。所述腔室包括致动机构，其可操作以相对于所述壁移动所述悬臂组件。

7. 发明申请

US20080171444A1 Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor 有权
标题翻译：用于调整电容耦合射频等离子体反应器中电极间隙的装置
公开(公告)号：US20080171444A1
公开(公告)日：2008-07-17
申请号：US11653869
申请日：2007-01-17
申请人： Rajinder Dhindsa , Eric H. Lenz , Andy W. DeSepte , Lumin Li
发明人： Rajinder Dhindsa , Eric H. Lenz , Andy W. DeSepte , Lumin Li
IPC分类号： H01L21/3065
CPC分类号： H01J37/32568 , H01J37/32091
摘要： A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.
摘要翻译：等离子体处理室包括构造成中和大气负荷的悬臂组件。该室包括围绕内部区域并具有形成在其中的开口的壁。悬臂组件包括用于支撑腔室内的衬底的衬底支撑件。悬臂组件延伸穿过开口，使得一部分位于室外。所述腔室包括致动机构，其可操作以相对于所述壁移动所述悬臂组件。

8. 发明授权

US07252738B2 Apparatus for reducing polymer deposition on a substrate and substrate support 有权
标题翻译：用于减少基板和基板支撑件上的聚合物沉积的装置
公开(公告)号：US07252738B2
公开(公告)日：2007-08-07
申请号：US10251179
申请日：2002-09-20
申请人： Jose Tong , Eric H Lenz
发明人： Jose Tong , Eric H Lenz
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/67069 , H01J37/32623 , H01J37/32642 , Y10S156/915
摘要： An adjustable RF coupling ring is capable of reducing a vertical gap between a substrate and a hot edge ring in a vacuum processing chamber. The reduction of the gap reduces polymer deposits on the substrate and electrostatic chuck and improves wafer processing.
摘要翻译：可调节的RF耦合环能够减小真空处理室中的衬底和热边缘环之间的垂直间隙。间隙的减少减少了基板和静电卡盘上的聚合物沉积，并改善了晶片加工。

9. 发明授权

US06669811B2 Linear drive system for use in a plasma processing system 有权
公开(公告)号：US06669811B2
公开(公告)日：2003-12-30
申请号：US10012265
申请日：2001-11-05
申请人： Fangli Hao , Keith Dawson , Eric H. Lenz
发明人： Fangli Hao , Keith Dawson , Eric H. Lenz
IPC分类号： H01L21306
CPC分类号： H01J37/32623 , H01J37/32568
摘要： A plasma processing system for processing a substrate is disclosed. The system includes a process component capable of effecting a plasma inside a process chamber. The system also includes a gear drive assembly for moving the process component in a linear direction during processing of the substrate.

10. 发明授权

US5534751A Plasma etching apparatus utilizing plasma confinement 失效
标题翻译：利用等离子体限制的等离子体蚀刻装置
公开(公告)号：US5534751A
公开(公告)日：1996-07-09
申请号：US500196
申请日：1995-07-10
申请人： Eric H. Lenz , Robert D. Dible
发明人： Eric H. Lenz , Robert D. Dible
IPC分类号： H05H1/46 , B01J19/08 , C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01J7/24
CPC分类号： H01J37/32623 , H01J37/32165
摘要： Plasma etching apparatus includes a stack of quartz rings that are spaced apart to form slots therebetween and that are positioned to surround an interaction space between two electrodes of the apparatus where a plasma is formed during operation of the apparatus. The dimensions of the slots are chosen to insure that charged particles of spent gases in the plasma exiting the interaction space are neutralized by wall collisions as they exit the slots. Two voltage sources of different frequencies are used to apply voltages to the electrodes in a fashion that isolates each source from the other.
摘要翻译：等离子体蚀刻设备包括石英环堆叠，其间隔开以在其间形成槽，并且被定位成围绕在设备的操作期间形成等离子体的设备的两个电极之间的相互作用空间。选择槽的尺寸以确保离开相互作用空间的等离子体中的废气的带电粒子在它们离开槽时被壁碰撞中和。使用不同频率的两个电压源以将每个源与另一个源隔离的方式向电极施加电压。

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