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81. 发明授权

US07176103B2 Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 有权
公开(公告)号：US07176103B2
公开(公告)日：2007-02-13
申请号：US10703854
申请日：2003-11-07
申请人： Tsutomu Ogihara , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
发明人： Tsutomu Ogihara , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L21/76 , C23C16/00
摘要： The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside. More specifically, the zeolite sol is prepared by hydrolyzing and decomposing a silane compound expressed by a general formula: Si(OR1)4 (wherein R1 represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R1, the R1s can be independent and the same as or different from each other) in a conventional coating solution for forming a porous film in the presence of a structure-directing agent and a basic catalyst; and then by heating the silane compound at a temperature of 75° C. or lower. A composition for forming a porous film which contains this zeolite sol is used.

82. 发明申请

US20060286816A1 Method for fabricating semiconductor device and semiconductor device 审中-公开
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20060286816A1
公开(公告)日：2006-12-21
申请号：US11471491
申请日：2006-06-21
申请人： Nobuo Aoi , Hideo Nakagawa
发明人： Nobuo Aoi , Hideo Nakagawa
IPC分类号： H01L21/4763 , H01L23/58 , H01L21/31
CPC分类号： H01L21/76834 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31633 , H01L21/3185 , H01L21/76832 , H01L21/76849 , H01L21/76867 , H01L21/76886
摘要： A method for fabricating a semiconductor device includes the steps of forming a nitrogen-containing layer in an exposed portion of a copper interconnect formed in an insulating film provided on a substrate; and forming an interlayer insulating film on the nitrogen-containing layer through plasma CVD performed by using, as a material, an organic silicon compound having a siloxane (Si—O—Si) bond.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在设置在衬底上的绝缘膜中形成的铜互连件的暴露部分中形成含氮层; 通过使用具有硅氧烷（Si-O-Si）键的有机硅化合物作为材料，通过等离子体CVD在含氮层上形成层间绝缘膜。

83. 发明申请

US20050164494A1 Method for forming semiconductor device 有权
标题翻译：半导体器件形成方法
公开(公告)号：US20050164494A1
公开(公告)日：2005-07-28
申请号：US11090885
申请日：2005-03-28
申请人： Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
发明人： Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
IPC分类号： G03F7/00 , H01L21/027 , H01L21/312 , H01L21/316 , H01L21/44 , H01L21/4763 , H01L21/768
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L21/76807 , H01L21/76808 , H01L21/76817 , H01L21/76828
摘要： A method for forming a semiconductor device includes the steps of forming a flowable film made of an insulating material with flowability; forming a first concave portion in the flowable film through transfer of a convex portion of a pressing face of a pressing member by pressing the pressing member against the flowable film; forming a solidified film having the first concave portion by solidifying the flowable film through annealing at a first temperature with the pressing member pressed against the flowable film; forming a burnt film having the first concave portion by burning the solidified film through annealing at a second temperature higher than the first temperature; forming a second concave portion connected at least to the first concave portion in the burnt film by forming, on the burnt film, a mask having an opening for forming the second concave portion and etching the burnt film by using the mask; and forming a plug and a metal interconnect by filing the first concave portion and the second concave portion of the burnt film with a conductive film.
摘要翻译：一种形成半导体器件的方法包括以下步骤：形成由具有流动性的绝缘材料制成的可流动膜; 通过将所述按压部件压靠在所述可流动膜上，通过使按压部件的按压面的凸部转移而在所述可流动膜中形成第一凹部; 通过使所述挤压构件压靠在所述可流动膜上，在第一温度下使所述可流动膜固化，形成具有所述第一凹部的固化膜; 通过在比所述第一温度高的第二温度退火来烧结所述固化膜，形成具有所述第一凹部的燃烧膜; 通过在所述燃烧膜上形成具有用于形成所述第二凹部的开口的掩模，并且通过使用所述掩模来蚀刻所述燃烧膜，形成至少与所述燃烧膜中的所述第一凹部连接的第二凹部; 以及通过用导电膜填充所述燃烧膜的所述第一凹部和所述第二凹部来形成插塞和金属互连。

84. 发明申请

US20050059231A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050059231A1
公开(公告)日：2005-03-17
申请号：US10958282
申请日：2004-10-06
申请人： Hideo Nakagawa , Eiji Tamaoka , Masafumi Kubota , Tetsuya Ueda
发明人： Hideo Nakagawa , Eiji Tamaoka , Masafumi Kubota , Tetsuya Ueda
IPC分类号： H01L21/288 , H01L21/3205 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/48 , H01L29/40
CPC分类号： H01L21/7682 , H01L21/288 , H01L21/2885 , H01L21/32051 , H01L21/76879 , H01L21/76885 , H01L21/76897 , H01L23/5222 , H01L23/5226 , H01L23/5228 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes metal interconnects made from a multi-layer film composed of a first metal film formed on a semiconductor substrate with an insulating film sandwiched therebetween and a second metal film deposited on the first metal film. An interlayer insulating film having a via hole is formed on the metal interconnects. A third metal film is selectively grown on the second metal film within the via hole, so that a plug can be formed from the third metal film.
摘要翻译：半导体器件包括由半导体衬底上形成的第一金属膜和夹在其间的绝缘膜构成的多层膜和沉积在第一金属膜上的第二金属膜制成的金属互连。在金属互连件上形成具有通孔的层间绝缘膜。选择性地在通孔内的第二金属膜上生长第三金属膜，从而能够从第三金属膜形成插塞。

85. 发明授权

US06828247B2 Method for etching organic film, method for fabricating semiconductor device and pattern formation method 失效
标题翻译：蚀刻有机膜的方法，制造半导体器件的方法和图案形成方法
公开(公告)号：US06828247B2
公开(公告)日：2004-12-07
申请号：US10214754
申请日：2002-08-09
申请人： Hideo Nakagawa , Toshio Hayashi , Yasuhiro Morikawa
发明人： Hideo Nakagawa , Toshio Hayashi , Yasuhiro Morikawa
IPC分类号： H01L21302
CPC分类号： H01L21/7681 , H01L21/31138 , H01L21/76804 , H01L21/76831 , Y10S438/905
摘要： An organic film is etched by using plasma generated from an etching gas including a first gas containing, as a principal constituent, a compound including carbon, hydrogen and nitrogen and a second gas including a nitrogen component.
摘要翻译：通过使用由包括以包含碳，氢和氮的化合物为主要成分的第一气体和包含氮成分的第二气体的蚀刻气体产生的等离子体蚀刻有机膜。

86. 发明授权

US5470106A Air bag having a high burst strength 失效
标题翻译：气袋具有很高的爆裂强度
公开(公告)号：US5470106A
公开(公告)日：1995-11-28
申请号：US211500
申请日：1994-04-07
申请人： Kunio Nishimura , Hideo Nakagawa , Nobuo Takahashi
发明人： Kunio Nishimura , Hideo Nakagawa , Nobuo Takahashi
IPC分类号： B60R21/16
CPC分类号： B60R21/23
摘要： The air bag of the present invention having an excellent burst strength is formed from substantially circular bottom and top cloths each consisting of a woven fabric, the bottom cloth is reinforced with an apron formed from a woven fabric, arranged around a hole for connecting an inflator to the air bag and seam-joined to the bottom cloth, the apron has an outermost circumferential seam line in a quadrilateral form such as a substantially regular square, rhombic or rectangular form, preferably a regular square form, having the same center point as that of the inflator-connecting hole, and the outermost circumferential quadrilateral seam line satisfies the requirements (1) and (2):(1) in an imaginary circle having a diameter Dw and drawn around the same center as that of the inflator-connecting hole on the apron in such a manner that at least one pair of vertexes of the outermost quadrilateral seam line, spaced at a largest diagonal distance from each other is inscribed in the imaginary circle, a ratio of each of straight line distance Da and Db between one of the inscribed vertexes and each of two vertexes adjacent to the inscribed vertex to the diameter Dw is 0.6/1 to 0.9/1, and(2) a ratio of each of Da and Db to a diameter De of the circular bottom cloth is 0.5/1 or less.
摘要翻译： PCT No.PCT / JP93 / 01162 Sec。 371日期1994年4月7日 102（e）1994年4月7日PCT PCT 1993年8月19日PCT公布。出版物WO94 / 04396 日本公报1994年3月3日。具有优异爆裂强度的本发明的气囊由基本圆形的底部和顶部布料形成，每个布由机织织物组成，底布用由机织织物形成的围裙加强，围绕用于将充气器连接到气囊并且接合到底布的孔，围裙具有四边形形式的最外周边接缝线，例如基本上规则的正方形，菱形或矩形形式，优选地是正方形形状，具有与充气机连接孔相同的中心点，并且最外周四边形缝线满足要求（1）和（2）：（1）在具有直径Dw并围绕相同中心拉伸的假想圆中围裙上的充气机连接孔的位置，使得最外侧的四边形接缝线的至少一对顶点彼此间距最大的对角线距离是内切的在一个内接顶点和与内切顶点相邻的两个顶点中的每一个之间的直线距离Da和Db之间的直径Dw的比率为0.6 / 1至0.9 / 1，（2） Da和Db中的每一个与圆底布的直径De之比为0.5 / 1或更小。

87. 发明授权

US08968972B2 Photomask blank, process for production of photomask, and chromium-containing material film 有权
标题翻译：光掩模坯料，光掩模生产工艺和含铬材料膜
公开(公告)号：US08968972B2
公开(公告)日：2015-03-03
申请号：US13883850
申请日：2011-11-18
申请人： Hiroki Yoshikawa , Souichi Fukaya , Yukio Inazuki , Tsuneo Yamamoto , Hideo Nakagawa
发明人： Hiroki Yoshikawa , Souichi Fukaya , Yukio Inazuki , Tsuneo Yamamoto , Hideo Nakagawa
IPC分类号： G03F1/50 , C22C27/06 , G03F1/54 , G03F1/80 , C23C14/06 , G03F1/30
CPC分类号： G03F1/80 , B32B15/01 , C22C27/06 , C23C14/0641 , C23C14/0676 , G03F1/00 , G03F1/30 , G03F1/50 , G03F1/54
摘要： In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400° C. or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision.
摘要翻译：在本发明的含铬材料膜中，添加元素，能够使元素和铬的混合物在400℃以下的温度下成为液相。使用这种含铬材料膜作为光掩模坯料的光学膜（例如遮光膜，蚀刻掩模膜或蚀刻阻挡膜）可以实现氯干蚀刻的改进，同时保持与常规含铬材料膜相同的光学特性等，从而提高图案形成精度。

88. 发明申请

US20090294726A1 ORGANIC SILICON OXIDE FINE PARTICLES AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE 有权
标题翻译：有机硅氧化物微粒及其制备方法，多孔膜成膜组合物，多孔膜及其形成方法及半导体器件
公开(公告)号：US20090294726A1
公开(公告)日：2009-12-03
申请号：US12472681
申请日：2009-05-27
申请人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： B32B1/00 , B29C35/08 , B29C35/02 , C09K3/00
CPC分类号： H01B3/10 , Y10T428/25 , Y10T428/259 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/31663
摘要： Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T/Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms.
摘要翻译：提供可以形成具有期望作为高性能多孔绝缘膜的介电常数和机械强度并且具有优异的化学稳定性的多孔膜的有机氧化硅微粒及其制备方法。具体地说，提供了一种有机氧化硅微粒，其包含至少含有无机氧化硅或有机氧化硅的芯和至少含有有机氧化硅的壳，并且通过使用壳形成可水解硅烷在芯周围形成存在碱性催化剂; 其中构成核或壳的硅原子中，具有至少一个直接连接到碳原子上的键的硅原子数（T）与（Q）的硅原子数（Q）的比（T / Q）附着在氧原子上的四个键在壳中比在核中大; 并且其中所述成壳可水解硅烷至少包含具有两个或多个可水解基团的硅原子的可水解硅烷化合物，其通过碳链彼此结合，或通过在一些碳原子之间含有一个硅原子的碳链。

89. 发明申请

US20090042403A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体器件和半导体器件的方法
公开(公告)号：US20090042403A1
公开(公告)日：2009-02-12
申请号：US12244469
申请日：2008-10-02
申请人： Nobuo Aoi , Hideo Nakagawa
发明人： Nobuo Aoi , Hideo Nakagawa
IPC分类号： H01L21/31
CPC分类号： H01L21/76834 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31633 , H01L21/3185 , H01L21/76832 , H01L21/76849 , H01L21/76867 , H01L21/76886
摘要： A method for fabricating a semiconductor device includes the steps of forming a nitrogen-containing layer in an exposed portion of a copper interconnect formed in an insulating film provided on a substrate; and forming an interlayer insulating film on the nitrogen-containing layer through plasma CVD performed by using, as a material, an organic silicon compound having a siloxane (Si—O—Si) bond.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在设置在衬底上的绝缘膜中形成的铜互连件的暴露部分中形成含氮层; 通过使用具有硅氧烷（Si-O-Si）键的有机硅化合物作为材料，通过等离子体CVD在含氮层上形成层间绝缘膜。

90. 发明申请

US20080188076A1 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080188076A1
公开(公告)日：2008-08-07
申请号：US11898140
申请日：2007-09-10
申请人： Yasunori Morinaga , Hideo Nakagawa
发明人： Yasunori Morinaga , Hideo Nakagawa
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76873 , H01L21/76877
摘要： A trench is formed in an interlayer dielectric formed on a substrate, then a barrier seed film is formed to cover the interlayer dielectric and the inner walls of the trench, and copper is embedded in the trench by electrolytic plating using the barrier seed film as an electrode. The barrier seed film is a single-layer film made of an oxide or nitride of a refractory metal and contains a low-resistance metal other than copper.
摘要翻译：在形成在基板上的层间电介质中形成沟槽，然后形成阻挡种子膜以覆盖沟槽的层间电介质和内壁，并且通过电解电镀将铜嵌入沟槽中，使用阻挡种子膜作为电极。阻挡种子膜是由难熔金属的氧化物或氮化物制成的单层膜，并且含有铜以外的低电阻金属。

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