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1. 发明申请

US20080290521A1 FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE 失效
标题翻译：成膜组合物，具有低介电常数的绝缘膜，其形成方法和半导体器件
公开(公告)号：US20080290521A1
公开(公告)日：2008-11-27
申请号：US12029569
申请日：2008-02-12
申请人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L21/31 , B32B3/26 , C04B41/49 , B05D3/02 , H01L23/58
CPC分类号： H01L21/31695 , C08G77/08 , C08L83/04 , C09D183/04 , H01B3/46 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , Y10T428/31663
摘要： In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR1)4 or R2nSi(OR3)4-n wherein R1s, R2(s) and R3(s) may be the same or different when a plurality of them are contained in the molecule and each independently represents a linear or branched C1-4 alkyl group in the presence of a hydrophilic basic catalyst and a hydrophobic basic catalyst is used for a conventional porous-film forming composition.
摘要翻译：在本发明中，通过水解和缩合由下式表示的硅烷化合物制备的硅溶胶：Si（OR1）4或R2nSi（OR3 )4-n，其中R1，R2（s）和R3（s）可以相同或者在分子中含有多个它们并且在亲水性碱性催化剂存在下各自独立地表示直链或支链C 1-4烷基，并且将疏水性碱性催化剂用于常规多孔膜形成组合物时使用。

2. 发明申请

US20100233482A1 Organic silicon oxide fine particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device 审中-公开
标题翻译：有机氧化硅微粒及其制备方法，多孔膜形成组合物，多孔膜及其形成方法以及半导体器件
公开(公告)号：US20100233482A1
公开(公告)日：2010-09-16
申请号：US12789902
申请日：2010-05-28
申请人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： B32B1/00 , C09K3/00
CPC分类号： H01B3/10 , Y10T428/25 , Y10T428/259 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/31663
摘要： Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T/Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms.
摘要翻译：提供可以形成具有期望作为高性能多孔绝缘膜的介电常数和机械强度并且具有优异的化学稳定性的多孔膜的有机氧化硅微粒及其制备方法。具体地说，提供了一种有机氧化硅微粒，其包含至少含有无机氧化硅或有机氧化硅的芯和至少含有有机氧化硅的壳，并且通过使用壳形成可水解硅烷在芯周围形成存在碱性催化剂; 其中构成核或壳的硅原子中，具有至少一个直接连接到碳原子上的键的硅原子数（T）与（Q）的硅原子数（Q）的比（T / Q）附着在氧原子上的四个键在壳中比在核中大; 并且其中所述成壳可水解硅烷至少包含具有两个或多个可水解基团的硅原子的可水解硅烷化合物，其通过碳链彼此结合，或通过在一些碳原子之间含有一个硅原子的碳链。

3. 发明授权

US07786022B2 Method for forming insulating film with low dielectric constant 失效
标题翻译：低介电常数形成绝缘膜的方法
公开(公告)号：US07786022B2
公开(公告)日：2010-08-31
申请号：US12029569
申请日：2008-02-12
申请人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L21/31
CPC分类号： H01L21/31695 , C08G77/08 , C08L83/04 , C09D183/04 , H01B3/46 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , Y10T428/31663
摘要： In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR1)4 or R2nSi(OR3)4-n wherein R1s, R2(s) and R3(s) may be the same or different when a plurality of them are contained in the molecule and each independently represents a linear or branched C1-4 alkyl group in the presence of a hydrophilic basic catalyst and a hydrophobic basic catalyst is used for a conventional porous-film forming composition.
摘要翻译：在本发明中，通过水解和缩合由下式表示的硅烷化合物制备的硅溶胶：Si（OR1）4或R2nSi（OR3 )4-n，其中R1，R2（s）和R3（s）可以相同或者在分子中含有多个它们并且在亲水性碱性催化剂存在下各自独立地表示直链或支链C 1-4烷基，并且将疏水性碱性催化剂用于常规多孔膜形成组合物时使用。

4. 发明授权

US07754330B2 Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device 有权
标题翻译：有机氧化硅核壳颗粒及其制备方法，多孔成膜组合物，多孔膜及其形成方法以及半导体器件
公开(公告)号：US07754330B2
公开(公告)日：2010-07-13
申请号：US12472681
申请日：2009-05-27
申请人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： B32B5/16
CPC分类号： H01B3/10 , Y10T428/25 , Y10T428/259 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/31663
摘要： Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T/Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms.
摘要翻译：提供可以形成具有期望作为高性能多孔绝缘膜的介电常数和机械强度并且具有优异的化学稳定性的多孔膜的有机氧化硅微粒及其制备方法。具体地说，提供了一种有机氧化硅微粒，其包含至少含有无机氧化硅或有机氧化硅的芯和至少含有有机氧化硅的壳，并且通过使用壳形成可水解硅烷在芯周围形成存在碱性催化剂; 其中构成核或壳的硅原子中，具有至少一个直接连接到碳原子上的键的硅原子数（T）与（Q）的硅原子数（Q）的比（T / Q）附着在氧原子上的四个键在壳中比在核中大; 并且其中所述成壳可水解硅烷至少包含具有两个或多个可水解基团的硅原子的可水解硅烷化合物，其通过碳链彼此结合，或通过在一些碳原子之间含有一个硅原子的碳链。

5. 发明申请

US20080290472A1 SEMICONDUCTOR INTERLAYER-INSULATING FILM FORMING COMPOSITION, PREPARATION METHOD THEREOF, FILM FORMING METHOD, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体层间绝缘膜形成组合物，其制备方法，膜形成方法和半导体器件
公开(公告)号：US20080290472A1
公开(公告)日：2008-11-27
申请号：US12029562
申请日：2008-02-12
申请人： Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Tsutomu Ogihara , Motoaki Iwabuchi , Hideo Nakagawa , Masaru Sasago
发明人： Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Tsutomu Ogihara , Motoaki Iwabuchi , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L23/58 , C08K3/34 , C08K3/36 , B32B5/18 , H01L21/312
CPC分类号： H01L21/31695 , C08G77/16 , C08G77/70 , C08G77/80 , C08K3/36 , C08L83/04 , C09D183/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/7682 , H01L2221/1047 , Y10T428/249953 , C08L83/00
摘要： Provided is a porous-film-forming composition containing silicon-oxide-based fine particles and a polysiloxane compound obtained by hydrolysis and condensation reactions, in the presence of an acid catalyst, of a hydrolyzable silane compound containing at least one tetrafunctional alkoxysilane compound represented by the following formula (1): Si(OR1)4 (1) wherein, R1s may be the same or different and each independently represents a linear or branched C1-4 alkyl group and/or at least one alkoxysilane compound represented by the following formula (2): R2nSi(OR3)4-n (2) wherein, R2(s) may be the same or different when there are plural R2s and each independently represents a linear or branched C1-8 alkyl group, R3(s) may be the same or different when there are plural R3s and each independently represents a linear or branched C1-4 alkyl group, and n is an integer from 1 to 3 in the reaction mixture containing a large excess of water.
摘要翻译：本发明提供一种多孔膜形成用组合物，其含有氧化硅系微粒和通过水解缩合反应得到的聚硅氧烷化合物，在酸催化剂的存在下，含有至少一种四官能性烷氧基硅烷化合物的水解性硅烷化合物以下公式（1）：<？in-line-formula description =“In-line formula”end =“lead”？> Si（OR1）4（1）<？in-line-formula description =“In-line 式中，R 1可以相同或不同，各自独立地表示直链或支链C 1-4烷基和/或由下式（2）表示的至少一种烷氧基硅烷化合物： in-line-formula description =“In-line Formulas”end =“lead”？> R2nSi（OR3）4-n（2）<？in-line-formula description =“In-line Formulas”end =“tail” 其中，当有多个R 2并且各自独立地表示直链或支链的C 1-8烷基时，R 2（s）可以相同或不同，R 3（s）可以相同或不同当存在多个R 3并且各自独立地表示直链或支链C 1-4烷基时，并且n是含有大量过量水的反应混合物中n是1至3的整数。

6. 发明申请

US20090294726A1 ORGANIC SILICON OXIDE FINE PARTICLES AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE 有权
标题翻译：有机硅氧化物微粒及其制备方法，多孔膜成膜组合物，多孔膜及其形成方法及半导体器件
公开(公告)号：US20090294726A1
公开(公告)日：2009-12-03
申请号：US12472681
申请日：2009-05-27
申请人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： B32B1/00 , B29C35/08 , B29C35/02 , C09K3/00
CPC分类号： H01B3/10 , Y10T428/25 , Y10T428/259 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/31663
摘要： Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T/Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms.
摘要翻译：提供可以形成具有期望作为高性能多孔绝缘膜的介电常数和机械强度并且具有优异的化学稳定性的多孔膜的有机氧化硅微粒及其制备方法。具体地说，提供了一种有机氧化硅微粒，其包含至少含有无机氧化硅或有机氧化硅的芯和至少含有有机氧化硅的壳，并且通过使用壳形成可水解硅烷在芯周围形成存在碱性催化剂; 其中构成核或壳的硅原子中，具有至少一个直接连接到碳原子上的键的硅原子数（T）与（Q）的硅原子数（Q）的比（T / Q）附着在氧原子上的四个键在壳中比在核中大; 并且其中所述成壳可水解硅烷至少包含具有两个或多个可水解基团的硅原子的可水解硅烷化合物，其通过碳链彼此结合，或通过在一些碳原子之间含有一个硅原子的碳链。

7. 发明授权

US07357961B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 有权
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US07357961B2
公开(公告)日：2008-04-15
申请号：US10819544
申请日：2004-04-07
申请人： Motoaki Iwabuchi , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Motoaki Iwabuchi , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： C08G77/06 , B05D3/02
CPC分类号： H01L21/3122 , C08G77/04 , C08G77/08 , C08G77/50 , C09D183/04 , C09D183/14 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10T428/249953 , Y10T428/31663
摘要： Provided are a film formation composition which can produce a film having high strength and low dielectric constant, a method for manufacturing the same, a method for forming a porous film, a porous film, and a semiconductor device containing the porous film internally. More specifically provided is a film formation composition, comprising a polymer which is obtainable by hydrolysis and condensation of one or more hydrolysable silane compounds in the presence of anionic ion exchange resin, wherein the hydrolysable silane compound is selected from the group consisting of Formulae (1) and (2): (R1)aSi(R2)4-a (1) (R3)b(R5)3-bSi—R7—Si(R6)3-c(R4)c (2) wherein R1, R3 and R4 each independently represents a monovalent hydrocarbon group which may have a substituent; R2, R5 and R6 each independently represents a hydrolyzable group; R7 represents a divalent organic group; a represents an integer of 0 to 3; and b and c each represents an integer of 1 or 2.
摘要翻译：本发明提供一种成膜组合物，其可以制造具有高强度和低介电常数的膜，其制造方法，多孔膜形成方法，多孔膜和在内部含有多孔膜的半导体器件。更具体地提供了一种成膜组合物，其包含通过在阴离子离子交换树脂的存在下水解和缩合一种或多种可水解硅烷化合物而获得的聚合物，其中可水解硅烷化合物选自由式（1））和（2）：<？in-line-formula description =“In-line Formulas”end =“lead”？（R＆lt; 1＆gt;）＆lt; 4-a（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula- 公式描述=“在线公式”end =“lead”？>（R 3）3（R 5）3 -b-Si-R 7 -Si（R 6）3-c（R 4））（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中R 1，R 3 R 4和R 4各自独立地表示可以具有取代基的一价烃基; R 2，R 5和R 6各自独立地表示可水解基团; R 7表示二价有机基团; a表示0〜3的整数， b和c各自表示1或2的整数。

8. 发明授权

US07332446B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device 有权
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US07332446B2
公开(公告)日：2008-02-19
申请号：US10808692
申请日：2004-03-25
申请人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Motoaki Iwabuchi , Hideo Nakagawa , Masaru Sasago
发明人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Motoaki Iwabuchi , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L21/469
CPC分类号： H01L21/02126 , C09D183/04 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： According to the invention, the thin film having the thickness controlled desirably can be easily formed using common semiconductor processes. Provided is a coating liquid for forming the porous film having an excellent dielectric property and mechanical property. Specifically, the coating liquid for forming a porous film comprises the condensation product obtained by condensation of one or more silicate compounds represented by the formula (X2O) i(SiO2)j(H2O)k and one more organosilate compounds represented by the formula (X2O)a(RSiO1.5)b(H2O)c. Thus, the porous insulating film having sufficient mechanical strength and dielectric properties for use in the semiconductor manufacturing process can be manufactured.
摘要翻译：根据本发明，可以使用普通的半导体工艺容易地形成具有控制厚度的薄膜。提供一种用于形成具有优异的介电性能和机械性能的多孔膜的涂布液。具体地，用于形成多孔膜的涂布液包括通过一种或多种由式（X 2 O 2）O表示的硅酸盐化合物（SiO 2）的缩合获得的缩合产物，（H 2）2）另外，另外还有一种由式（ⅩⅪ）表示的有机硅酸盐化合物（H 2 O）C（H 2 O）C（H 2 O）。因此，可以制造用于半导体制造工艺中具有足够的机械强度和介电性能的多孔绝缘膜。

9. 发明申请

US20100283133A1 FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：成膜组合物，具有低介电常数的绝缘膜，其形成方法和半导体器件
公开(公告)号：US20100283133A1
公开(公告)日：2010-11-11
申请号：US12842400
申请日：2010-07-23
申请人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L29/00 , H01L21/31 , C09D5/25
CPC分类号： H01L21/31695 , C08G77/08 , C08L83/04 , C09D183/04 , H01B3/46 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , Y10T428/31663
摘要： In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR1)4 or R2nSi(OR3)4-n wherein R1s, R2(s) and R3(s) may be the same or different when a plurality of them are contained in the molecule and each independently represents a linear or branched C1-4 alkyl group in the presence of a hydrophilic basic catalyst and a hydrophobic basic catalyst is used for a conventional porous-film forming composition.
摘要翻译：在本发明中，通过水解和缩合由下式表示的硅烷化合物制备的硅溶胶：Si（OR1）4或R2nSi（OR3 )4-n，其中R1，R2（s）和R3（s）可以相同或者在分子中含有多个它们并且在亲水性碱性催化剂存在下各自独立地表示直链或支链C 1-4烷基，并且将疏水性碱性催化剂用于常规多孔膜形成组合物时使用。

10. 发明申请

US20090294922A1 ORGANIC SILICON OXIDE FINE PARTICLE AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：有机硅氧化物微粒及其制备方法，多孔膜成膜组合物，多孔膜及其形成方法及半导体器件
公开(公告)号：US20090294922A1
公开(公告)日：2009-12-03
申请号：US12472645
申请日：2009-05-27
申请人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L23/58 , H01L21/47 , C07F7/08 , B32B9/00
CPC分类号： H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , Y10T428/2995
摘要： Provided is an organic silicon oxide fine particle capable of satisfying an expected dielectric constant and mechanical strength and having excellent chemical stability for obtaining a high-performance porous insulating film. More specifically, provided is an organic silicon oxide fine particle comprising a core comprising an inorganic silicon oxide or a first organic silicon oxide containing an organic group having a carbon atom directly attached to a silicon atom and, and a shell on or above an outer circumference of the core, the shell comprising a second organic silicon oxide different from the first organic silicon oxide which the second organic silicon has been formed by hydrolysis and condensation, in the presence of a basic catalyst, of a shell-forming component comprising an organic-group-containing hydrolyzable silane containing an organic group having a carbon atom directly attached to a silicon atom or a mixture of the organic-group-containing hydrolyzable silane and an organic-group-free hydrolyzable silane not having the organic group, wherein a ratio [C]/[Si] is 0 or greater but less than 1 in the core and 1 or greater 1 in the shell wherein [C] represents the number of all the carbon atoms and [Si] represents the number of all the silicon atoms.
摘要翻译：提供一种能够满足预期介电常数和机械强度并且具有优异的化学稳定性以获得高性能多孔绝缘膜的有机氧化硅细颗粒。更具体地说，提供了一种有机氧化硅微粒，其包括含有无机氧化硅或含有直接连接到硅原子的碳原子的有机基团的第一有机氧化硅的芯，以及在外周上或上方的壳所述壳包含不同于所述第一有机氧化硅的第二有机氧化硅，所述第二有机氧化硅通过在碱性催化剂的存在下通过水解和缩合形成第二有机硅，所述成壳组分包含有机 - 含有具有与硅原子直接连接的碳原子的有机基团的含有基团的可水解硅烷或含有机基的可水解硅烷和不具有有机基团的可水解硅烷的混合物，其中[ C] / [Si]在核中为0以上且小于1，在壳中为1以上1，[C]表示全部碳原子数a nd [Si]表示所有硅原子的数目。

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