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1. 发明授权

US08017518B2 Method for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08017518B2
公开(公告)日：2011-09-13
申请号：US12341495
申请日：2008-12-22
申请人： Yasunori Morinaga , Hideo Nakagawa
发明人： Yasunori Morinaga , Hideo Nakagawa
IPC分类号： H01L21/00
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/3105 , H01L21/76825 , H01L21/76826 , H01L21/76831
摘要： A method for manufacturing a semiconductor device includes the steps of: (a) forming a low dielectric constant film over a semiconductor substrate; (b) forming a recess in the low dielectric constant film; (c) after the step (b), sequentially performing the steps of (c1) applying an organic solution to the low dielectric constant film and (c2) silylating the low dielectric constant film with a silylating solution; and (d) after the step (c), embedding a metal in the recess to form at least one of a via plug and a metal wiring in the low dielectric constant film. Performing the step (c1) before the step (c2) improves a penetration property of the silylating solution into the low dielectric constant film.
摘要翻译：一种制造半导体器件的方法包括以下步骤：（a）在半导体衬底上形成低介电常数膜; （b）在低介电常数膜中形成凹部; （c）在步骤（b）之后，顺序地执行步骤（c1）将有机溶液施加到低介电常数膜上，和（c2）用甲硅烷基化溶液甲硅烷基化低介电常数膜; 和（d）在步骤（c）之后，将金属嵌入凹槽中以在低介电常数膜中形成通孔塞和金属布线中的至少一个。在步骤（c2）之前执行步骤（c1）改善了甲硅烷基化溶液渗透到低介电常数膜中的渗透性。

2. 发明授权

US08486832B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08486832B2
公开(公告)日：2013-07-16
申请号：US11898140
申请日：2007-09-10
申请人： Yasunori Morinaga , Hideo Nakagawa
发明人： Yasunori Morinaga , Hideo Nakagawa
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/76873 , H01L21/76877
摘要： A trench is formed in an interlayer dielectric formed on a substrate, then a barrier seed film is formed to cover the interlayer dielectric and the inner walls of the trench, and copper is embedded in the trench by electrolytic plating using the barrier seed film as an electrode. The barrier seed film is a single-layer film made of an oxide or nitride of a refractory metal and contains a low-resistance metal other than copper.
摘要翻译：在形成在基板上的层间电介质中形成沟槽，然后形成阻挡种子膜以覆盖沟槽的层间电介质和内壁，并且通过电解电镀将铜嵌入沟槽中，使用阻挡种子膜作为电极。阻挡种子膜是由难熔金属的氧化物或氮化物制成的单层膜，并且含有铜以外的低电阻金属。

3. 发明授权

US07923522B2 Process for preparing a dispersion liquid of zeolite fine particles 有权
标题翻译：制备沸石微粒分散液的方法
公开(公告)号：US07923522B2
公开(公告)日：2011-04-12
申请号：US12060291
申请日：2008-04-01
申请人： Yoshitaka Hamada , Masaru Sasago , Hideo Nakagawa , Yasunori Morinaga
发明人： Yoshitaka Hamada , Masaru Sasago , Hideo Nakagawa , Yasunori Morinaga
IPC分类号： C08G77/08
CPC分类号： H01L21/31695 , C01B39/04 , C23C18/1212 , C23C18/122 , C23C18/127 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , Y10T428/249953
摘要： The invention provides a preparation process of organic-group-modified zeolite fine particles excellent in stability of particle size and to be used for electronic materials or the like. The preparation process comprises a first step of obtaining a liquid containing zeolite seed crystals having a particle size of 80 nm or less which are formed in the presence of a structure directing agent, a second step of adding an organic-group-containing hydrolyzable silane compound to the liquid obtained by the first step, and a third step of maturing the liquid of the second step at temperature higher than that of the first step. A dispersion liquid of zeolite fine particles obtained by the process.
摘要翻译：本发明提供了粒径稳定性优异且用于电子材料等的有机基团改性沸石微粒的制备方法。制备方法包括获得在结构导向剂存在下形成的含有粒径为80nm以下的沸石晶种的液体的第一步骤，添加含有机基的可水解硅烷化合物的第二步骤与第一步骤获得的液体相比，以及第三步骤，在比第一步高的温度下熟化第二步骤的液体。通过该方法获得的沸石细颗粒的分散液。

4. 发明申请

US20090170314A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090170314A1
公开(公告)日：2009-07-02
申请号：US12341495
申请日：2008-12-22
申请人： Yasunori Morinaga , Hideo Nakagawa
发明人： Yasunori Morinaga , Hideo Nakagawa
IPC分类号： H01L21/768
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/3105 , H01L21/76825 , H01L21/76826 , H01L21/76831
摘要： A method for manufacturing a semiconductor device includes the steps of: (a) forming a low dielectric constant film over a semiconductor substrate; (b) forming a recess in the low dielectric constant film; (c) after the step (b), sequentially performing the steps of (c1) applying an organic solution to the low dielectric constant film and (c2) silylating the low dielectric constant film with a silylating solution; and (d) after the step (c), embedding a metal in the recess to form at least one of a via plug and a metal wiring in the low dielectric constant film. Performing the step (c1) before the step (c2) improves a penetration property of the silylating solution into the low dielectric constant film.
摘要翻译：一种制造半导体器件的方法包括以下步骤：（a）在半导体衬底上形成低介电常数膜; （b）在低介电常数膜中形成凹部; （c）在步骤（b）之后，顺序地执行步骤（c1）将有机溶液施加到低介电常数膜上，和（c2）用甲硅烷基化溶液甲硅烷基化低介电常数膜; 和（d）在步骤（c）之后，将金属嵌入凹槽中以在低介电常数膜中形成通孔塞和金属布线中的至少一个。在步骤（c2）之前执行步骤（c1）改善了甲硅烷基化溶液渗透到低介电常数膜中的渗透性。

5. 发明申请

US20080248280A1 Process for Preparing a Dispersion Liquid of Zeolite Fine Particles 有权
标题翻译：沸石微粒分散液的制备方法
公开(公告)号：US20080248280A1
公开(公告)日：2008-10-09
申请号：US12060291
申请日：2008-04-01
申请人： Yoshitaka Hamada , Masaru Sasago , Hideo Nakagawa , Yasunori Morinaga
发明人： Yoshitaka Hamada , Masaru Sasago , Hideo Nakagawa , Yasunori Morinaga
IPC分类号： B32B3/26 , C09K17/40 , H01L21/3105 , B05D3/02
CPC分类号： H01L21/31695 , C01B39/04 , C23C18/1212 , C23C18/122 , C23C18/127 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , Y10T428/249953
摘要： The invention provides a preparation process of organic-group-modified zeolite fine particles excellent in stability of particle size and to be used for electronic materials or the like. The preparation process comprises a first step of obtaining a liquid containing zeolite seed crystals having a particle size of 80 nm or less which are formed in the presence of a structure directing agent, a second step of adding an organic-group-containing hydrolyzable silane compound to the liquid obtained by the first step, and a third step of maturing the liquid of the second step at temperature higher than that of the first step. A dispersion liquid of zeolite fine particles obtained by the process.
摘要翻译：本发明提供了粒径稳定性优异且用于电子材料等的有机基团改性沸石微粒的制备方法。制备方法包括获得在结构导向剂存在下形成的含有粒径为80nm以下的沸石晶种的液体的第一步骤，添加含有机基的可水解硅烷化合物的第二步骤与第一步骤获得的液体相比，以及第三步骤，在比第一步高的温度下熟化第二步骤的液体。通过该方法获得的沸石细颗粒的分散液。

6. 发明申请

US20080188076A1 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080188076A1
公开(公告)日：2008-08-07
申请号：US11898140
申请日：2007-09-10
申请人： Yasunori Morinaga , Hideo Nakagawa
发明人： Yasunori Morinaga , Hideo Nakagawa
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76873 , H01L21/76877
摘要： A trench is formed in an interlayer dielectric formed on a substrate, then a barrier seed film is formed to cover the interlayer dielectric and the inner walls of the trench, and copper is embedded in the trench by electrolytic plating using the barrier seed film as an electrode. The barrier seed film is a single-layer film made of an oxide or nitride of a refractory metal and contains a low-resistance metal other than copper.
摘要翻译：在形成在基板上的层间电介质中形成沟槽，然后形成阻挡种子膜以覆盖沟槽的层间电介质和内壁，并且通过电解电镀将铜嵌入沟槽中，使用阻挡种子膜作为电极。阻挡种子膜是由难熔金属的氧化物或氮化物制成的单层膜，并且含有铜以外的低电阻金属。

7. 发明授权

US07997900B2 Partial denture 有权
标题翻译：部分义齿
公开(公告)号：US07997900B2
公开(公告)日：2011-08-16
申请号：US11921679
申请日：2005-06-09
申请人： Hideo Nakagawa
发明人： Hideo Nakagawa
IPC分类号： A61C13/12
CPC分类号： A61C13/267 , A61C13/01
摘要： A partial denture having an artificial tooth, a denture base holding the artificial tooth, and a clasp fixed to the denture base, wherein the clasp includes a back-side arm and a front-side arm and does not include a rest, the back-side arm extending in a rearward bulging convex on a back side of a dentition-extended range of the denture base, the front-side arm extending in a forward bulging convex toward a front side of the dentition-extended range of the denture base, wherein the back-side arm and the front-side arm extend within a height range ranging from an extended plane of a top surface of a crown of the artificial tooth toward the denture base side.
摘要翻译：具有人造牙齿的部分义齿，保持人造牙齿的义齿基座和固定到义齿基座的扣环，其中，所述扣钩包括后侧臂和前侧臂，并且不包括休息，所述侧臂在所述假牙基部的牙列延伸范围的背侧上向后凸出延伸，所述前侧臂朝向所述义齿基座的齿列延伸范围的前侧朝向凸出的凸起延伸，其中后侧臂和前侧臂在从人造牙齿的顶部的顶表面的延伸平面朝向假牙基部侧的高度范围内延伸。

8. 发明申请

US20100203733A1 ETCHING METHOD, SEMICONDUCTOR AND FABRICATING METHOD FOR THE SAME 有权
标题翻译：蚀刻方法，半导体和制造方法
公开(公告)号：US20100203733A1
公开(公告)日：2010-08-12
申请号：US12766243
申请日：2010-04-23
申请人： Kenshi Kanegae , Shinichi Imai , Hideo Nakagawa
发明人： Kenshi Kanegae , Shinichi Imai , Hideo Nakagawa
IPC分类号： H01L21/467
CPC分类号： H01L21/31053 , H01L21/31116 , H01L21/31144 , H01L21/76801 , H01L21/76802 , H01L21/76804 , H01L21/76805 , H01L21/76807 , H01L21/76808 , H01L21/76822 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76835
摘要： An organic/inorganic hybrid film represented by SiCxHyOz (x>0, y≧0, z>0) is plasma-etched with an etching gas containing fluorine, carbon and nitrogen. During the etching, a carbon component is eliminated from the surface portion of the organic/inorganic hybrid film due to the existence of the nitrogen in the etching gas, to thereby reform the surface portion. The reformed surface portion is nicely plasma-etched with the etching gas containing fluorine and carbon.
摘要翻译：用含有氟，碳和氮的蚀刻气体等离子体蚀刻由SiCxHyOz（x> 0，y≥0，z> 0）表示的有机/无机杂化膜。在蚀刻期间，由于蚀刻气体中存在氮，从有机/无机混合膜的表面部分除去碳成分，从而使表面部分重新形成。重整表面部分用含氟和碳的蚀刻气体进行等离子体蚀刻。

9. 发明授权

US07659626B2 Semiconductor device including a barrier metal film 有权
标题翻译：包括阻挡金属膜的半导体装置
公开(公告)号：US07659626B2
公开(公告)日：2010-02-09
申请号：US10578003
申请日：2005-05-20
申请人： Hideo Nakagawa , Atsushi Ikeda , Nobuo Aoi
发明人： Hideo Nakagawa , Atsushi Ikeda , Nobuo Aoi
IPC分类号： H01L23/52 , H01L21/4763 , H01L23/48
CPC分类号： H01L21/76831 , H01L21/76846 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an insulation film 6 formed on a silicon substrate 1, a buried metal interconnect 8 formed in the insulation film 6, and a barrier metal film 7 formed between the insulation film 6 and the metal interconnect 8. The barrier metal film 7 is a metal compound film. The metal compound film is characterized by including at least one of elements forming the insulation film.
摘要翻译：半导体器件包括形成在硅衬底1上的绝缘膜6，形成在绝缘膜6中的掩埋金属互连8和形成在绝缘膜6和金属互连8之间的阻挡金属膜7.阻挡金属膜7 是金属化合物膜。金属化合物膜的特征在于包括形成绝缘膜的元素中的至少一种。

10. 发明申请

US20090011065A1 Dry etching method, fine structure formation method, mold and mold fabrication method 有权
标题翻译：干蚀刻法，精细结构形成法，模具和模具制造方法
公开(公告)号：US20090011065A1
公开(公告)日：2009-01-08
申请号：US11659109
申请日：2006-05-23
申请人： Hideo Nakagawa , Masaru Sasago , Tomoyasu Murakami
发明人： Hideo Nakagawa , Masaru Sasago , Tomoyasu Murakami
IPC分类号： B23K10/00 , B44C1/22
CPC分类号： C03B11/082 , B81C1/00531 , B81C2201/0143 , C03B11/084 , C03B2215/07 , C03B2215/412 , C04B41/009 , C04B41/5346 , C04B41/91 , C23F4/00 , G02B6/136 , Y02P40/57 , C04B41/0054 , C04B35/56
摘要： A WC substrate 7 is etched by using plasma 50 generated from a gas including a chlorine atom.
摘要翻译：通过使用由包括氯原子的气体产生的等离子体50来蚀刻WC衬底7。

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