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81. 发明授权

US06635945B1 Semiconductor device having element isolation structure 失效
标题翻译：具有元件隔离结构的半导体器件
公开(公告)号：US06635945B1
公开(公告)日：2003-10-21
申请号：US09580953
申请日：2000-05-30
申请人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Yasuko Yoshida , Norio Suzuki , Kozo Watanabe , Kenji Kanamitsu
发明人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Yasuko Yoshida , Norio Suzuki , Kozo Watanabe , Kenji Kanamitsu
IPC分类号： H01L2900
CPC分类号： H01L21/76232 , H01L29/0657
摘要： A semiconductor device and process of forming the device are described. The process includes forming a pad oxide film on the circuit-forming side of a semiconductor substrate; forming an oxidation prevention film on the pad oxide film; removing the oxidation prevention film and the pad oxide film at a desired position, thereby exposing the surface of the semiconductor substrate; horizontally recessing the pad oxide film; etching the exposed surface of the semiconductor substrate by isotropic etching; forming a trench to a desired depth, using the oxidation prevention film as a mask; horizontally recessing the pad oxide film; and oxidizing the trench formed in the semiconductor substrate. The produced device has round upper trench edges obtained by conducting isotropic etching of the exposed surface of the semiconductor substrate and horizontally recessing of the pad oxide film before the oxidation of the trench, whereby only one oxidation step is required.
摘要翻译：描述半导体器件和形成器件的工艺。该工艺包括在半导体衬底的电路形成侧上形成衬垫氧化膜; 在衬垫氧化膜上形成氧化防止膜; 在期望的位置除去氧化防止膜和焊盘氧化膜，从而暴露半导体衬底的表面; 使衬垫氧化膜水平地凹陷; 通过各向同性蚀刻蚀刻半导体衬底的暴露表面; 使用氧化防止膜作为掩模，形成期望深度的沟槽; 使衬垫氧化膜水平地凹陷; 以及氧化在半导体衬底中形成的沟槽。所制造的器件具有圆形的上沟槽边缘，其通过对半导体衬底的暴露表面进行各向同性蚀刻并在沟槽氧化之前水平凹陷焊盘氧化膜而获得，由此仅需要一个氧化步骤。

82. 发明授权

US06559027B2 Semiconductor device and process for producing the sme 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US06559027B2
公开(公告)日：2003-05-06
申请号：US09845338
申请日：2001-05-01
申请人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
发明人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
IPC分类号： H01L2176
CPC分类号： H01L21/76232 , H01L21/76235 , H01L29/78
摘要： A semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step, there is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.
摘要翻译：一种半导体器件，其具有高度可靠的凹槽隔离结构，其具有在凹槽上边缘处形成的所需曲率半径，并且不形成任何步骤，通过减小半导体上的元件隔离槽的沟槽上边缘周围的应力产生而产生从而优化元件隔离槽的形状并使器件更精细并提高器件的电气特性。

83. 发明授权

US06559012B2 Method for manufacturing semiconductor integrated circuit device having floating gate and deposited film 有权
公开(公告)号：US06559012B2
公开(公告)日：2003-05-06
申请号：US09961301
申请日：2001-09-25
申请人： Shoji Shukuri , Norio Suzuki , Yasuhiro Taniguchi
发明人： Shoji Shukuri , Norio Suzuki , Yasuhiro Taniguchi
IPC分类号： H01L21336
CPC分类号： H01L21/823456 , H01L21/28185 , H01L21/28194 , H01L21/823462 , H01L21/823481 , H01L21/8238 , H01L21/823857 , H01L21/823878 , H01L27/0922 , H01L27/105 , H01L27/1052 , H01L27/10873 , H01L27/10894 , H01L27/115 , H01L27/11526 , H01L27/11546 , H01L29/513 , H01L29/6659 , H01L29/7833
摘要： A method for manufacturing a semiconductor integrated circuit device including a first field effect transistor having a gate insulating film formed over a first element forming region of a main surface of a semiconductor substrate; and a second field effect transistor having a gate insulating film formed over a second element forming region of the main surface of the semiconductor substrate and made thinner than the gate insulating film of the first field effect transistor. The method comprises the steps of forming a thermally oxidized film over a first element forming region and a second element forming region of the main surface of the semiconductor substrate; forming a deposited film over the main surface of the semiconductor substrate including said thermally oxidized film; removing the deposited film and said thermally oxidized film from over the second element forming region; and forming a thermally oxidized film over the second element forming region to form a gate insulating film individually over the first element forming region and the second element forming region.

84. 发明授权

US06510165B1 Band controlling apparatus 失效
标题翻译：乐团控制装置
公开(公告)号：US06510165B1
公开(公告)日：2003-01-21
申请号：US08626699
申请日：1996-04-02
申请人： Shiro Uriu , Norio Suzuki , Noriko Samejima
发明人： Shiro Uriu , Norio Suzuki , Noriko Samejima
IPC分类号： H04L1256
CPC分类号： H04L49/104 , H04L12/5601 , H04L49/309 , H04L2012/562 , H04L2012/5635 , H04L2012/5651
摘要： A service identification adding portion adds service identification information to a cell corresponding to each connection that uses a predetermined communication service (ABR service) and that is input to a switch system. A connection number counting portion counts the number of connections that use the communication service on each output line at predetermined intervals. A band control information generating portion generates band control information corresponding to each output line at predetermined intervals based on the number of connections counted at predetermined intervals. A band control information indicating portion sends band control information at predetermined intervals corresponding to each output line to a transmission side terminal corresponding to a connection that uses the communication service on each output line.
摘要翻译：服务识别添加部分将服务识别信息添加到与使用预定通信服务（ABR服务）的每个连接相对应的小区，并且被输入到交换机系统。连接号码计数部分以预定间隔对每个输出线上使用通信服务的连接数进行计数。频带控制信息生成部基于以预定间隔计数的连接数，以规定间隔生成与各输出线对应的频带控制信息。频带控制信息指示部分将与每条输出线对应的预定间隔的频带控制信息发送到对应于在每个输出线上使用通信服务的连接的发送侧终端。

85. 发明授权

US06326255B1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06326255B1
公开(公告)日：2001-12-04
申请号：US09675053
申请日：2000-09-29
申请人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Yasuko Yoshida , Norio Suzuki , Michimasa Funabashi
发明人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Yasuko Yoshida , Norio Suzuki , Michimasa Funabashi
IPC分类号： H01L2126
CPC分类号： H01L21/76224 , Y10S438/978
摘要： A method for manufacturing a semiconductor device includes the steps of (1) forming a pad oxide film of 5 nm or more on a circuit forming surface of a semiconductor substrate; (2) forming an oxidation inhibition film on the pad oxide film; (3) forming grooves of a given depth with the oxidation inhibition film as a mask; (4) receding the pad oxide film; (5) oxidizing the grooves formed on the semiconductor substrate in the range of 0
摘要翻译：一种制造半导体器件的方法包括以下步骤：（1）在半导体衬底的电路形成表面上形成5nm以上的衬垫氧化膜; （2）在衬垫氧化膜上形成氧化抑制膜; （3）以氧化抑制膜为掩模形成给定深度的槽; （4）后退衬垫氧化膜; （5）在氧化气氛为干燥氧化（H2 /O2≈0）的0℃<0.88t-924的范围内对形成在半导体衬底上的沟槽进行氧化，对应于空气中的氧气分压氧分压比为C％，氧化温度为t（℃）; （6）在氧化槽内埋入绝缘膜; （7）除去形成在氧化抑制膜上的埋置绝缘膜; （8）除去形成在半导体衬底的电路形成表面上的氧化抑制膜; 和（9）去除形成在所述半导体衬底的电路形成表面上的衬垫氧化膜。

86. 发明授权

US06284625B1 Method of forming a shallow groove isolation structure 有权
标题翻译：形成浅槽隔离结构的方法
公开(公告)号：US06284625B1
公开(公告)日：2001-09-04
申请号：US09434308
申请日：1999-11-05
申请人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Yasuko Yoshida , Norio Suzuki , Michimasa Funabashi
发明人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Yasuko Yoshida , Norio Suzuki , Michimasa Funabashi
IPC分类号： H01L2176
CPC分类号： H01L21/76224 , Y10S438/978
摘要： A method for manufacturing a semiconductor device includes the steps of (1) forming a pad oxide film of 5 nm or more on a circuit forming surface of a semiconductor substrate; (2) forming an oxidation inhibition film on the pad oxide film; (3) forming grooves of a given depth with the oxidation inhibition film as a mask; (4) receding the pad oxide film; (5) oxidizing the grooves formed on the semiconductor substrate in the range of 0
摘要翻译：一种制造半导体器件的方法包括以下步骤：（1）在半导体衬底的电路形成表面上形成5nm以上的衬垫氧化膜; （2）在衬垫氧化膜上形成氧化抑制膜; （3）以氧化抑制膜为掩模形成给定深度的槽; （4）后退衬垫氧化膜; （5）在氧化气氛为干燥氧化（H2 /O2≈0）的0℃<0.88t-924的范围内对形成在半导体衬底上的沟槽进行氧化，对应于空气中的氧气分压氧分压比为C％，氧化温度为t（℃）; （6）在氧化槽内埋入绝缘膜; （7）除去形成在氧化抑制膜上的埋置绝缘膜; （8）除去形成在半导体衬底的电路形成表面上的氧化抑制膜; 和（9）去除形成在所述半导体衬底的电路形成表面上的衬垫氧化膜。

87. 发明授权

US06270860B1 Method of making push button switch covering with protective coating 失效
标题翻译：按钮开关覆盖保护涂层的方法
公开(公告)号：US06270860B1
公开(公告)日：2001-08-07
申请号：US08428820
申请日：1995-04-25
申请人： Toshihiro Nakata , Norio Suzuki
发明人： Toshihiro Nakata , Norio Suzuki
IPC分类号： H05H100
CPC分类号： C08J7/047 , C08J2383/04 , C08J2475/00 , Y10T428/263 , Y10T428/31598
摘要： A push button switch covering member of a silicone rubber is imparted with excellent resistance against stain deposition and abrasive wearing by providing a protective overcoating layer of a urethane resin-based coating composition capable of being cured by forming urethane linkages between isocyanate groups of a polyisocyanate compound and hydroxy groups of a polyhydroxy compound. The coating procedure with the coating composition on the surface of a silicone rubber-made covering member is preceded by a plasma treatment so as to activate the surface resulting in an increased adhesive bonding strength between the silicone rubber body and the coating layer. The improvement is more remarkable when the plasma-activated surface is subjected to a priming treatment with a silane coupling agent and coating with the coating composition is undertaken as soon as possible or within 60 minutes after completion of the plasma treatment.
摘要翻译：通过提供能够通过在多异氰酸酯化合物的异氰酸酯基团之间形成氨基甲酸酯键来固化的聚氨酯树脂基涂料组合物的保护性外涂层，赋予硅橡胶的按钮开关覆盖部件优异的耐污染沉积和磨损性能和多羟基化合物的羟基。在硅橡胶制成的覆盖部件的表面上的涂料组合物的涂布步骤之前是进行等离子体处理，以激活表面，导致硅橡胶体与涂层之间的粘结强度增加。当用硅烷偶联剂对等离子体激活的表面进行引发处理并且涂层组合物的涂层尽快进行或在等离子体处理完成后的60分钟内进行时，这种改进更加显着。

88. 发明授权

US6082345A Air-fuel ratio control system for internal combustion engines 失效
标题翻译：内燃机空燃比控制系统
公开(公告)号：US6082345A
公开(公告)日：2000-07-04
申请号：US195441
申请日：1998-11-18
申请人： Kota Ikeuchi , Norio Suzuki , Yukio Noda
发明人： Kota Ikeuchi , Norio Suzuki , Yukio Noda
IPC分类号： F02D41/14 , F02D41/00
CPC分类号： F02D41/1495 , F02D41/1494 , F02B2275/18 , F02D41/1456
摘要： An air-fuel ratio control system for an internal combustion engine is provided, which includes an oxygen concentration sensor arranged in the exhaust system and having an output characteristic that an output thereof is substantially proportional to concentration of oxygen present in exhaust gases from the engine. An ECU is responsive to the output of the oxygen concentration sensor, for carrying out feedback control of the air-fuel ratio of a mixture supplied to the engine so as to make the air-fuel ratio equal to a desired air-fuel ratio. An activated state of the oxygen concentration sensor is detected. Correction of the air-fuel ratio of the mixture by the feedback control is limited, depending upon the detected activated state of the oxygen concentration sensor.
摘要翻译：提供了一种用于内燃机的空燃比控制系统，其包括设置在排气系统中的氧浓度传感器，并具有输出特性，其输出与来自发动机的废气中存在的氧浓度基本成比例。 ECU响应于氧浓度传感器的输出，对供给到发动机的混合物的空燃比进行反馈控制，以使空燃比等于期望的空燃比。检测氧浓度传感器的活化状态。根据检测到的氧浓度传感器的激活状态，通过反馈控制来校正混合物的空燃比是有限的。

89. 发明授权

US5888656A Cured silicone rubber article having a protective coating layer 失效
标题翻译：具有保护涂层的固化硅橡胶制品
公开(公告)号：US5888656A
公开(公告)日：1999-03-30
申请号：US600804
申请日：1996-02-13
申请人： Norio Suzuki , Toshihiro Nakata
发明人： Norio Suzuki , Toshihiro Nakata
IPC分类号： B05D3/06 , B05D7/02 , B05D7/24 , C08J7/00 , C08J7/04 , C08J7/12 , H01H11/00 , H01H13/04 , B32B25/20
CPC分类号： C08J7/12 , C08J7/04 , C08J7/123 , C08J2383/04 , Y10T428/31598
摘要： Proposed is a cured silicone rubber article such as a push button switch covering member having a protective coating layer of a urethane resin-based coating composition having excellent wear resistance against rubbing and capable of giving a dry and rigid touch feeling to the finger tip of the operator of the key tops. The coated silicone rubber article is obtained by subjecting a cured base body of a silicone rubber, prior to the coating with a urethane resin-based coating composition, first to a low temperature plasma treatment and then to a coating treatment with a specific primer composition which is a mixture of an epoxy group-containing organosilane compound and an amino group-containing organosilane compound in a molar mixing ratio in the range from 1:2 to 1:5.
摘要翻译：提出了一种固化的硅橡胶制品，例如按钮开关覆盖件，具有具有优异的抗摩擦耐磨性的聚氨酯树脂基涂料组合物的保护涂层，并且能够对其指尖施加干燥和刚性的触感键顶的操作者。涂覆的硅橡胶制品通过在用氨基甲酸酯树脂基涂料组合物涂覆之前将硅橡胶的固化基体首先进行低温等离子体处理，然后用特定的底漆组合物进行涂布处理，是含有环氧基的有机硅烷化合物和含氨基的有机硅烷化合物的混合物，其摩尔比为1:2〜1:5。

90. 发明授权

US5816230A Air-fuel ratio control system for internal combustion engines 失效
标题翻译：内燃机空燃比控制系统
公开(公告)号：US5816230A
公开(公告)日：1998-10-06
申请号：US901721
申请日：1997-07-28
申请人： Naohiro Kurokawa , Toru Kitamura , Norio Suzuki , Yuh Yoshii
发明人： Naohiro Kurokawa , Toru Kitamura , Norio Suzuki , Yuh Yoshii
IPC分类号： F02D45/00 , F02D41/00 , F02D41/14 , F02D41/34
CPC分类号： F02D41/008 , F02D41/1401 , F02D41/1456 , F02D41/2448 , F02D41/2454 , F02D2041/1409 , F02D2041/1415 , F02D2041/1416 , F02D2041/1417 , F02D2041/1418 , F02D2041/1431 , F02D2041/1433 , F02D2200/0402
摘要： An air-fuel ratio control system for an internal combustion engine has a sensor which detects the air-fuel ratio of exhaust gases in an exhaust passage of the engine emitted from a plurality of cylinders. An air-fuel ratio of a mixture supplied to each of a plurality of cylinders is estimated, based on the detected air-fuel ratio and a model representative of a behavior of the exhaust passage. A cylinder-by-cylinder air-fuel ratio control amount is calculated for use in controlling the air-fuel ratio of the mixture supplied to the each of the cylinders in a feedback manner responsive to the estimated air-fuel ratio of the mixture such that the estimated air-fuel ratio of the mixture supplied to the each of the cylinders is converged to a desired air-fuel ratio. A learned value of the cylinder-by-cylinder air-fuel ratio control amount is calculated. When the difference between the detected air-fuel ratio and the estimated air-fuel ratio of the mixture supplied to the each of the cylinder is larger than a predetermined value, the calculation of the learned value of the cylinder-by-cylinder air-fuel ratio control amount is inhibited.
摘要翻译：用于内燃机的空燃比控制系统具有检测从多个气缸发射的发动机的排气通道中的排气的空燃比的传感器。基于检测到的空燃比和表示排气通路的行为的模型，推定供给到多个气缸中的每一个的混合气体的空燃比。计算出逐个缸缸空燃比控制量，用于响应于混合物的估计空燃比控制供应到每个气缸的混合物的空燃比，使得供给到每个气缸的混合物的估计空燃比被收敛到期望的空燃比。计算出逐个缸缸空燃比控制量的学习值。当检测到的空燃比与供给到每个气缸的混合气体的估计空燃比之间的差大于预定值时，计算气缸缸空气燃料的学习值比例控制量被抑制。

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